JP2012164697A - 電力用パワーモジュール及び電力用半導体装置 - Google Patents

電力用パワーモジュール及び電力用半導体装置 Download PDF

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Publication number
JP2012164697A
JP2012164697A JP2011021679A JP2011021679A JP2012164697A JP 2012164697 A JP2012164697 A JP 2012164697A JP 2011021679 A JP2011021679 A JP 2011021679A JP 2011021679 A JP2011021679 A JP 2011021679A JP 2012164697 A JP2012164697 A JP 2012164697A
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power
semiconductor element
power semiconductor
heat spreader
electric power
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JP2011021679A
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Japanese (ja)
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JP2012164697A5 (enrdf_load_stackoverflow
Inventor
Yasushi Nakajima
泰 中島
Noriyuki Betsushiba
範之 別芝
Hirotoshi Maekawa
博敏 前川
Seiji Ishibashi
誠司 石橋
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2011021679A priority Critical patent/JP2012164697A/ja
Publication of JP2012164697A publication Critical patent/JP2012164697A/ja
Publication of JP2012164697A5 publication Critical patent/JP2012164697A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2011021679A 2011-02-03 2011-02-03 電力用パワーモジュール及び電力用半導体装置 Pending JP2012164697A (ja)

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JP2011021679A JP2012164697A (ja) 2011-02-03 2011-02-03 電力用パワーモジュール及び電力用半導体装置

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JP2012164697A5 JP2012164697A5 (enrdf_load_stackoverflow) 2013-08-01

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015029186A1 (ja) * 2013-08-29 2015-03-05 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
JP2016096302A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置とその製造方法
WO2016125669A1 (ja) * 2015-02-02 2016-08-11 株式会社村田製作所 半導体モジュール
WO2017138402A1 (ja) * 2016-02-08 2017-08-17 ローム株式会社 半導体装置、パワーモジュール、およびその製造方法
JP2018063999A (ja) * 2016-10-11 2018-04-19 トヨタ自動車株式会社 半導体装置
CN115023805A (zh) * 2020-02-06 2022-09-06 三菱电机株式会社 半导体模块和电力变换装置
JP2023033668A (ja) * 2021-08-30 2023-03-13 株式会社 日立パワーデバイス 半導体装置及びその製造方法
WO2024004026A1 (ja) * 2022-06-28 2024-01-04 三菱電機株式会社 半導体装置及び電力変換装置
WO2025010223A1 (en) * 2023-07-03 2025-01-09 Tesla, Inc. Semiconductor device package with improved cooling

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556648A (en) * 1978-10-20 1980-04-25 Toshiba Corp Semiconductor device
JPS5867050A (ja) * 1981-10-16 1983-04-21 Nec Corp 樹脂封止型半導体装置
JPH09213844A (ja) * 1995-09-04 1997-08-15 Anam Ind Co Inc 二重封止部を有するヒートシンク内装型半導体パッケージ及びその製造方法
JPH11243165A (ja) * 1998-12-22 1999-09-07 Sanken Electric Co Ltd 半導体装置
JP2010114257A (ja) * 2008-11-06 2010-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2010219420A (ja) * 2009-03-18 2010-09-30 Fuji Electric Systems Co Ltd 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556648A (en) * 1978-10-20 1980-04-25 Toshiba Corp Semiconductor device
JPS5867050A (ja) * 1981-10-16 1983-04-21 Nec Corp 樹脂封止型半導体装置
JPH09213844A (ja) * 1995-09-04 1997-08-15 Anam Ind Co Inc 二重封止部を有するヒートシンク内装型半導体パッケージ及びその製造方法
JPH11243165A (ja) * 1998-12-22 1999-09-07 Sanken Electric Co Ltd 半導体装置
JP2010114257A (ja) * 2008-11-06 2010-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2010219420A (ja) * 2009-03-18 2010-09-30 Fuji Electric Systems Co Ltd 半導体装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239123B2 (en) * 2013-08-29 2022-02-01 Mitsubishi Electric Corporation Semiconductor module, semiconductor device, and vehicle
CN105493272A (zh) * 2013-08-29 2016-04-13 三菱电机株式会社 半导体模块、半导体装置以及汽车
US20160111345A1 (en) * 2013-08-29 2016-04-21 Mitsubishi Electric Corporation Semiconductor module, semiconductor device, and vehicle
JPWO2015029186A1 (ja) * 2013-08-29 2017-03-02 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
WO2015029186A1 (ja) * 2013-08-29 2015-03-05 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
DE112013007390B4 (de) 2013-08-29 2020-06-25 Mitsubishi Electric Corporation Halbleitermodul, Halbleitervorrichtung und Fahrzeug
JP2016096302A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置とその製造方法
WO2016125669A1 (ja) * 2015-02-02 2016-08-11 株式会社村田製作所 半導体モジュール
JPWO2016125669A1 (ja) * 2015-02-02 2017-10-12 株式会社村田製作所 半導体モジュール
WO2017138402A1 (ja) * 2016-02-08 2017-08-17 ローム株式会社 半導体装置、パワーモジュール、およびその製造方法
JP2018063999A (ja) * 2016-10-11 2018-04-19 トヨタ自動車株式会社 半導体装置
CN115023805A (zh) * 2020-02-06 2022-09-06 三菱电机株式会社 半导体模块和电力变换装置
JP2023033668A (ja) * 2021-08-30 2023-03-13 株式会社 日立パワーデバイス 半導体装置及びその製造方法
JP7619723B2 (ja) 2021-08-30 2025-01-22 ミネベアパワーデバイス株式会社 半導体装置及びその製造方法
WO2024004026A1 (ja) * 2022-06-28 2024-01-04 三菱電機株式会社 半導体装置及び電力変換装置
JP7493686B1 (ja) 2022-06-28 2024-05-31 三菱電機株式会社 半導体装置及び電力変換装置
WO2025010223A1 (en) * 2023-07-03 2025-01-09 Tesla, Inc. Semiconductor device package with improved cooling

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