JP2012149347A - 基体の選択的な金属めっき方法およびその方法により製造された成形回路部品 - Google Patents
基体の選択的な金属めっき方法およびその方法により製造された成形回路部品 Download PDFInfo
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- JP2012149347A JP2012149347A JP2012004584A JP2012004584A JP2012149347A JP 2012149347 A JP2012149347 A JP 2012149347A JP 2012004584 A JP2012004584 A JP 2012004584A JP 2012004584 A JP2012004584 A JP 2012004584A JP 2012149347 A JP2012149347 A JP 2012149347A
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- plastic
- metal plating
- metal
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- palladium
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title claims abstract description 47
- 238000007747 plating Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- 229920003023 plastic Polymers 0.000 claims abstract description 60
- 239000004033 plastic Substances 0.000 claims abstract description 60
- 239000000654 additive Substances 0.000 claims abstract description 19
- 230000000996 additive effect Effects 0.000 claims abstract description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 35
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000011148 porous material Substances 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 229910000323 aluminium silicate Inorganic materials 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 7
- 238000002679 ablation Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000006722 reduction reaction Methods 0.000 claims description 4
- 229920001169 thermoplastic Polymers 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 239000004416 thermosoftening plastic Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- 150000002941 palladium compounds Chemical class 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000006713 insertion reaction Methods 0.000 claims 1
- 239000012778 molding material Substances 0.000 claims 1
- 239000006259 organic additive Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 238000010899 nucleation Methods 0.000 abstract description 14
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 150000004760 silicates Chemical class 0.000 abstract 2
- 238000011298 ablation treatment Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000010457 zeolite Substances 0.000 description 16
- 229910021536 Zeolite Inorganic materials 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 9
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 9
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 9
- 239000000084 colloidal system Substances 0.000 description 9
- 238000001746 injection moulding Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229920000106 Liquid crystal polymer Polymers 0.000 description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 6
- 238000001994 activation Methods 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000004952 Polyamide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920002959 polymer blend Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 150000002940 palladium Chemical class 0.000 description 2
- 239000011236 particulate material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000004634 thermosetting polymer Substances 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000007586 pull-out test Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229920006024 semi-aromatic copolyamide Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012745 toughening agent Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
- C23C18/204—Radiation, e.g. UV, laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0116—Porous, e.g. foam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0236—Plating catalyst as filler in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09118—Moulded substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Chemically Coating (AREA)
Abstract
【解決手段】本発明は、プラスチック基体表面の選択的な金属めっき方法およびこの方法により製造された成形回路部品に関し、この方法では、プラスチック基体が添加剤として天然のまたは合成して製造されたテクトアルミノケイ酸塩を含んでおり、プラスチック基体表面のアブレーション処理によりこのテクトアルミノケイ酸塩への到達を可能にし、シーディングし、最後に外部から電流をかけずに金属めっきする。
【選択図】なし
Description
形態1
予め4時間にわたって110℃の温度で乾燥したBayer AG社のBayblend T45型のポリカーボネートアクリルニトリルブタジエンスチレンブレンドから成る自然色の粒状物質を、Alpine社の100UPZ−II型のインパクトミル内で粉砕した。
形態1での第1のプロセスステップに倣い、BASF社のUltradur B4520型の自然色のポリブチレンテレフタレート(PBT)を、120℃で3時間の事前乾燥後に粉砕した。
予め1%のAlbion−Colours社の色素「Red X2GP」で赤く着色され、30%のガラス繊維が充填されているEMS社のHT2V−3X V0型の部分芳香族コポリアミドを、形態1での第1のプロセスステップに倣い、80℃で10時間の事前乾燥後に粉砕した。
形態1または形態2から得られたプラスチックプレート上に、波長355nmのUVレーザにより、パルスエネルギー35μJおよび速度500mm/sでの1回の通過で矩形のテスト構造を描いた。
形態3から得られたプラスチックプレート上に、波長1,054nmのNd−YAGレーザにより、パルスエネルギー120μJおよび速度4000mm/sでの2回の通過で矩形のテスト構造を描いた。
形態1から得られたプラスチックプレートの平らな表面内に、CNCフライス機を使用し、直径1.5mmおよび回転数18,000回転/minの2枚刃フライスにより、プレート表面から測定した深さが0.15mmの複数の矩形の凹部をフライス加工した。
形態4〜形態6で処理されたプレートを、組成が例えばAtotech社のMID活性剤Ni 200ml/lおよび濃H2SO4 5ml/lのPd2+含有水溶液中に、50℃で浴を動かしながら15分間浸漬した。その後プレートを、2段の流水洗浄カスケード内で、続いて脱イオン水中で洗浄した。
形態4〜形態6で処理されたさらなるプレートを、組成が例えば37%濃度HCl 250ml/l、PdCl2 170ml/l、およびSnCl2 15g/lのコロイド状のPd触媒溶液中に、30℃で浴を動かしながら5分間浸漬した。その後プレートを、2段の流水洗浄カスケード内で、続いて脱イオン水中で洗浄した。
形態3および形態5から得られ、かつ形態7により選択的に銅めっきされた試料プレートに、銅めっきの直後にDow Chemical社のRonamerse SMT Catalyst CF型の市販の浴中でPd活性化を施し、それからNiposit LT型の化学的ニッケル浴中で約4μmのNiP(リン含有率4〜6%)をニッケルめっきし、続いてAurolectroless SMT−G型の無電解金浴からの約0.1μm厚の金フラッシュ層が施された(両方ともDow Chemical社の浴)。
Claims (15)
- 材料の主要な部分が添加剤を収容または担持するプラスチックから成る基体の選択的な金属めっき方法であって、金属めっきすべき領域内で、基体の表面付近の層がアブレーション法により除去される方法において、プラスチックが添加剤として、アルミノケイ酸塩、特にテクトアルミノケイ酸塩の物質群からの少なくとも1種の化合物を含むこと、および貴金属、特にパラジウムの挿入を達成するために、プラスチック表面の金属めっきすべき領域内で、プラスチック中に取り込まれたアルミノケイ酸塩への到達性およびアルミノケイ酸塩の孔もしくは孔構造の開口がアブレーション法により達成されること、および最後に、外部から電流をかけない金属めっきが実施され、その場合、金属は始めに孔または孔構造の中で堆積され、さらに孔の外側の周縁領域で堆積され、したがって基体表面では平面的な金属めっき層が形成されることを特徴とする方法。
- アブレーション法のために、電磁放射、特にレーザ放射が用いられることを特徴とする請求項1に記載の方法。
- 前記電磁放射または前記レーザの波長が、193nm〜10,600nmの間の範囲内、好ましくは350nm〜1,100nmの間の範囲内であることを特徴とする請求項2に記載の方法。
- 使用するアルミノケイ酸塩の開口孔直径が、少なくとも、挿入反応に関与する反応物質の動的径(Kinetische Durchmesser)より大きいことを特徴とする請求項1〜3のいずれか一つに記載の方法。
- 添加剤の含有率が、プラスチックの混合物全体に対して1〜40重量%の間、好ましくは2〜30重量%の間であることを特徴とする請求項1〜4のいずれか一つに記載の方法。
- プラスチックが熱可塑性または熱硬化性のプラスチックであることを特徴とする請求項1〜5のいずれか一つに記載の方法。
- 金属めっきが、化学的に還元反応する金属浴(銅浴)中で化学的に実施されることを特徴とする請求項1〜6のいずれか一つに記載の方法。
- 熱可塑性プラスチックが、射出成形またはストランド押出成形された形で、またはフィルムの形に成形されていることを特徴とする請求項1〜7のいずれか一つに記載の方法。
- 熱硬化性プラスチックが、プレス成形材料として、または液体の形で存在することを特徴とする請求項1〜7のいずれか一つに記載の方法。
- プラスチックが、前記添加剤の他に1種またはそれ以上の無機または有機の添加剤を含み得ることを特徴とする請求項1〜9のいずれか一つに記載の方法。
- 前記さらなる添加剤が、赤外線の、緑の、および/または紫外線の波長領域内で、吸収最大を有し、かつプラスチックの吸収度を上昇させることを特徴とする請求項10に記載の方法。
- プラスチックマトリクス中の選択的に露出された孔構造内に、イオノゲン性またはコロイド状の貴金属の物質輸送が行われること、およびそこでは既知の連続反応により、化学的な銅堆積が始まることを特徴とする請求項1〜11のいずれか一つに記載の方法。
- 貴金属としてパラジウムまたはパラジウム化合物が用いられることを特徴とする請求項1〜12のいずれか一つに記載の方法。
- 3次元成形回路部品(MID)を製造するために使用されることを特徴とする請求項1〜13のいずれか一つに記載の方法。
- 請求項1〜14のいずれか一つに記載の方法によって製造された、基体上に金属めっき部を備えた成形回路部品。
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EP (1) | EP2476723A1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015033955A1 (ja) * | 2013-09-05 | 2015-03-12 | 三菱エンジニアリングプラスチックス株式会社 | 熱可塑性樹脂組成物、樹脂成形品、及びメッキ層付樹脂成形品の製造方法 |
JP2016121391A (ja) * | 2014-12-24 | 2016-07-07 | キヤノン・コンポーネンツ株式会社 | めっき皮膜付樹脂製品及びその製造方法並びに導電膜 |
JP2018053334A (ja) * | 2016-09-30 | 2018-04-05 | マクセルホールディングス株式会社 | メッキ部品の製造方法 |
US10304762B2 (en) | 2015-03-31 | 2019-05-28 | Olympus Corporation | Molded interconnect device, manufacturing method for molded interconnect device, and circuit module |
WO2020054581A1 (ja) | 2018-09-14 | 2020-03-19 | 日立化成株式会社 | 電子部品及び電子部品の製造方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130084395A1 (en) * | 2011-09-29 | 2013-04-04 | Roshan V. Chapaneri | Treatment of Plastic Surfaces After Etching in Nitric Acid Containing Media |
JP5456129B1 (ja) | 2012-09-28 | 2014-03-26 | 田中貴金属工業株式会社 | めっき処理のための触媒粒子を担持する基板の処理方法 |
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US10710116B2 (en) | 2017-09-21 | 2020-07-14 | General Electric Company | Methods and systems for manufacturing an ultrasound probe |
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CN113831589A (zh) * | 2021-10-11 | 2021-12-24 | 四川大学 | 含钨敏化助剂在制备可激光活化选择性金属化的树脂组合物中的应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3546011A (en) * | 1967-04-12 | 1970-12-08 | Degussa | Process for the production of electricity conducting surfaces on a nonconducting support |
JP2007048827A (ja) * | 2005-08-08 | 2007-02-22 | Sankyo Kasei Co Ltd | 導電性回路の形成方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629185A (en) * | 1969-10-17 | 1971-12-21 | Kollmorgen Corp | Metallization of insulating substrates |
DE3339857A1 (de) | 1983-11-04 | 1985-05-15 | Bayer Ag, 5090 Leverkusen | Verfahren zur vorbehandlung von polyamidsubstraten fuer die stromlose metallisierung |
US4859571A (en) * | 1986-12-30 | 1989-08-22 | E. I. Du Pont De Nemours And Company | Embedded catalyst receptors for metallization of dielectrics |
DE19731346C2 (de) * | 1997-06-06 | 2003-09-25 | Lpkf Laser & Electronics Ag | Leiterbahnstrukturen und ein Verfahren zu deren Herstellung |
GB9722028D0 (en) * | 1997-10-17 | 1997-12-17 | Shipley Company Ll C | Plating of polymers |
AU6402900A (en) * | 1999-06-08 | 2000-12-28 | Biomicro Systems, Inc. | Laser ablation of doped fluorocarbon materials and applications thereof |
DE10054088C1 (de) | 2000-09-29 | 2002-04-25 | Heraeus Gmbh W C | Kunststoff-Spritzgussteil und Verwendung |
TW521548B (en) * | 2000-10-13 | 2003-02-21 | Zeon Corp | Curable composition, molded article, multi-layer wiring substrate, particle and its manufacturing process, varnish and its manufacturing process, laminate, and flame retardant slurry |
DE10054544A1 (de) | 2000-11-01 | 2002-05-08 | Atotech Deutschland Gmbh | Verfahren zum chemischen Metallisieren von Oberflächen |
DE10132092A1 (de) | 2001-07-05 | 2003-01-23 | Lpkf Laser & Electronics Ag | Leiterbahnstrukturen und Verfahren zu ihrer Herstellung |
GB0212632D0 (en) * | 2002-05-31 | 2002-07-10 | Shipley Co Llc | Laser-activated dielectric material and method for using the same in an electroless deposition process |
US7187396B2 (en) * | 2003-11-07 | 2007-03-06 | Engelhard Corporation | Low visibility laser marking additive |
US20050112311A1 (en) * | 2003-11-26 | 2005-05-26 | Dalal Girish T. | CPVC compositions having good impact strength and heat stability, and smooth surfaces |
DE102005051632B4 (de) | 2005-10-28 | 2009-02-19 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen und zur Metallisierung von Kunststoffoberflächen |
EP1975276A1 (en) | 2007-03-30 | 2008-10-01 | Danmarks Tekniske Universitet | Preparation of a polymer article for selective metallization |
-
2011
- 2011-01-14 DE DE102011000138A patent/DE102011000138A1/de not_active Ceased
- 2011-12-20 EP EP11401676A patent/EP2476723A1/de not_active Withdrawn
-
2012
- 2012-01-09 KR KR1020120002484A patent/KR20120082820A/ko active Application Filing
- 2012-01-13 CN CN2012100097402A patent/CN102586764A/zh active Pending
- 2012-01-13 JP JP2012004584A patent/JP2012149347A/ja active Pending
- 2012-01-16 US US13/350,871 patent/US20120183793A1/en not_active Abandoned
-
2014
- 2014-10-27 KR KR1020140146265A patent/KR20140132324A/ko not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3546011A (en) * | 1967-04-12 | 1970-12-08 | Degussa | Process for the production of electricity conducting surfaces on a nonconducting support |
JP2007048827A (ja) * | 2005-08-08 | 2007-02-22 | Sankyo Kasei Co Ltd | 導電性回路の形成方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015033955A1 (ja) * | 2013-09-05 | 2015-03-12 | 三菱エンジニアリングプラスチックス株式会社 | 熱可塑性樹脂組成物、樹脂成形品、及びメッキ層付樹脂成形品の製造方法 |
JPWO2015033955A1 (ja) * | 2013-09-05 | 2017-03-02 | 三菱エンジニアリングプラスチックス株式会社 | 熱可塑性樹脂組成物、樹脂成形品、及びメッキ層付樹脂成形品の製造方法 |
JP2016121391A (ja) * | 2014-12-24 | 2016-07-07 | キヤノン・コンポーネンツ株式会社 | めっき皮膜付樹脂製品及びその製造方法並びに導電膜 |
US10304762B2 (en) | 2015-03-31 | 2019-05-28 | Olympus Corporation | Molded interconnect device, manufacturing method for molded interconnect device, and circuit module |
JP2018053334A (ja) * | 2016-09-30 | 2018-04-05 | マクセルホールディングス株式会社 | メッキ部品の製造方法 |
WO2020054581A1 (ja) | 2018-09-14 | 2020-03-19 | 日立化成株式会社 | 電子部品及び電子部品の製造方法 |
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US20120183793A1 (en) | 2012-07-19 |
CN102586764A (zh) | 2012-07-18 |
DE102011000138A1 (de) | 2012-07-19 |
KR20120082820A (ko) | 2012-07-24 |
EP2476723A1 (de) | 2012-07-18 |
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