CN102543855B - 三维集成电路结构及材料的制造方法 - Google Patents

三维集成电路结构及材料的制造方法 Download PDF

Info

Publication number
CN102543855B
CN102543855B CN201210016388.5A CN201210016388A CN102543855B CN 102543855 B CN102543855 B CN 102543855B CN 201210016388 A CN201210016388 A CN 201210016388A CN 102543855 B CN102543855 B CN 102543855B
Authority
CN
China
Prior art keywords
metal
plating
loading material
sodium
dimensional integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210016388.5A
Other languages
English (en)
Other versions
CN102543855A (zh
Inventor
郭福春
刘冬生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innetech Tianjin Electronics Co ltd
Original Assignee
XUNCHUANG (TIANJIN) ELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by XUNCHUANG (TIANJIN) ELECTRONICS CO Ltd filed Critical XUNCHUANG (TIANJIN) ELECTRONICS CO Ltd
Priority to CN201210016388.5A priority Critical patent/CN102543855B/zh
Publication of CN102543855A publication Critical patent/CN102543855A/zh
Priority to PCT/CN2012/083820 priority patent/WO2013107205A1/zh
Priority to US14/296,419 priority patent/US9099528B2/en
Application granted granted Critical
Publication of CN102543855B publication Critical patent/CN102543855B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0053Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1635Composition of the substrate
    • C23C18/1639Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1641Organic substrates, e.g. resin, plastic
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1655Process features
    • C23C18/166Process features with two steps starting with addition of reducing agent followed by metal deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1868Radiation, e.g. UV, laser
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/204Radiation, e.g. UV, laser
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073Multistep pretreatment
    • C23C18/208Multistep pretreatment with use of metal first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents
    • C23C18/405Formaldehyde
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0053Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping
    • B29C2045/0079Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping applying a coating or covering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0129Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0236Plating catalyst as filler in insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09118Moulded substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107Using laser light

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)

Abstract

本发明涉及一种新型的三维集成电路结构及材料的制造方法,步骤是在热塑性承载材料中加入醇类和/或醛类,用注塑机注塑成型为构件,质量含量5-10%;用激光射线在构件的表面照射出的线路图案;浸入pH=4-6的至少一种金属离子的溶液浸泡5-7分钟,水洗后放入pH=5的含有还原剂的水溶液中浸泡5-7分钟,在还原生成金属核的区域进行化学镀铜,镀层厚度为1-12微米,再中磷化学镀镍,镀层厚度为2-3微米。本发明在制备金属电路导体的过程中,由于塑性材料中不含有任何金属元素,保持了承载材料的原有机械性能,而且性能稳定,提高了导体轨道与承载材料之间的附着力,提高了三维集成电路的质量,降低了成本,减少了污染。

Description

三维集成电路结构及材料的制造方法
技术领域
本发明涉及一种新型的三维集成电路结构及材料的制造方法。
背景技术
三维集成电路结构是一种较为先进的电子集成电路器件,与传统的二维(平面)集成电路相比,这种三维集成电路的导体轨道结构具有明显的优越性,应用也更加广泛。在导体轨道结构的制各技术中,导体轨道承载材料的制备占据十分重要的地位。在已公开的文献和专利报道中,目前不导电承载材料的制备方法包括以下几种。
1)为了制造精细附着的导体轨道结构,在不导电的承载材料中掺入金属螯合物,其结构为尖晶石结构或类尖晶石结构的含铜化合物,且利用激光射线裂解出所构造的金属化晶核,这种方法可用于由热塑性的塑料采用喷铸方法制造电路载体。
2)采用摸块化的互连器件来制造三维喷铸电路载体。
上述两种方法的缺点在于金属螯合物的热稳定性对于现代高温塑料如LCP的加工处理温度处于临界范围内,因此该方法仅能有限制地应用在对于将来的无铅焊接工艺变得越来越重要的材料领域中。此外金属螯合物必须采用相对较高的掺杂,以在激光作用下得到足够密度的晶核用于快速金属化,然而高的合成体成份通常会损害承载材料所需的重要性能,如断裂强度和韧性等。
3)由激光射线分离出的金属化晶核通过金属微粒的隔离而物理钝化,其缺点是因为被隔离的微粒明显大于典型的金属螯合体的分子,所以导电性能比较差。,
4)目前关于三维集成电路技术的关键是两部分:(a)将金属螯合物直接添加到承载材料中,(b)利用激光将塑性材料中的具有金属活性的粒子打出,使其暴露在空气中,此方法的不足是:在塑性材料中添加金属螯合物易造成损害承载材料所需的重要性能,如断裂强度和韧性等。激光的能量大小直接影响金属化镀层工艺中的附着力和线路之间的溢镀(溢镀是指在化学镀铜和化学镀镍的过程中,造成非联通的线路导通)问题。
5)目前普遍采用在塑性材料中加入添加物的方法,其存在问题是由于添加物在塑性材料中分布的不均匀,对金属导体轨道的金属镀层的附着力有不利影响,从而影响了金属导体轨道的制备。目前正在使用的承载材料是在不导电的承载材料中只添加含铜元素的物质,所以,目前制备金属轨道的方法采用冲击镀铜(30分钟)、多道水洗、再镀厚铜(180分钟)、多道水洗、在最后化学镀镍。在金属轨道的金属化的过程中,必需采用含有大量甲醛作为还原剂的预冲击镀化学镀铜液。甲醛是一种对环境污染影响很大的物质,如果能够减少使用量或不用,那将是一件有利于环保的大事。
发明内容
本发明的目的是针对上述存在问题,提供一种新型的三维集成电路结构及材料的制造方法,即能量灼烧沉积(Energy Bumed Deposit)。本发明的突出特点是:在三维集成电路的承载材料中不含有任何金属元素的成分,而金属元素成分完全存在于电镀过程中。这个三维集成电路结构的制备方法是利用激光在结构载体表面镭射出需要金属化的特定区域并将在原料中的非金属光诱导催化剂转变成具有络合作用的基团,使其在后续金属化过程中发生催化作用。这是和其它某些方法的承载材料中含有金属元素成分,利用激光将塑料中的金属元素还原,然后进行金属化的原理和方法是不同的。
该方法是往承载塑性材料中添加少量非金属光诱导催化剂,主要成分为醇类或醛类,使承载材料在激光镭射后,结构中的非金属光诱导催化剂能形成的具有络合作用的催化剂成份,在含有的金属离子的溶液中,具有络合能力的金属离子先和塑料表面的具有络合作用的催化剂反应生成稳定络合物,此络合物被还原形成金属核,使其在制备导体轨道的过程中,保持了承载材料的原有机械性能,而且性能稳定。提高了导体轨道与承载材料之间的附着力、提高了三维集成电路的质量、降低成本、减少污染。
本发明提供的新型三维集成电路结构及材料的制造方法包括的具体步骤:
1)在热塑性工程塑料ABS、聚碳酸酯(PC)、聚对苯二甲酸丁二醇酯(PBT)等热稳定材料中通过加热150-250℃熔化、机械混合的方法把质量含量5-10%的固态或液态的一元、二元或三元醇和或一元、二元、三元醛的单一或组合的化合物和/或混合物(下面我们称之为非金属光诱导催化剂)添加到塑料中,得到含醇或醛的非金属光诱导催化剂的塑料。
2)把含有醇或醛的非金属光诱导催化剂的塑料用注塑机注塑成型为构件。可选地,其中,1,2,3-三羟基丙醇或2-甲基丙醛的质量含量5-10%;
3)用激光射线在构件的表面照射出线路图案;使承载材料在激光照射后的表面结构中,由于激光的热能和空气中的氧气使得至少非金属光诱导催化剂中的30%-50%的羟基或醛基生成羧基;一般而言,羧基对许多金属离子具有很好的络合作用。根据不同的改性材料特性,所述的激光射线波长范围从248nm到10600nm,激光调制频率从1K到1000K,脉冲宽度从4ns到200ns,激光平均功率从0.5W到100W;
4)将承载材料放入含有金属离子的溶液中,pH=4-6(简称A液),浸泡5-7分钟,在激光照射过的区域,塑料表面的具有络合作用的非金属光诱导催化剂中的羧基和具有络合能力的金属离子反应生成稳定络合物。用蒸馏水洗后放入pH=5的含有还原剂的水溶液中浸泡5-7分钟,构件的表面生成金属核。
在步骤4)中的A液所添加的具有络合能力的金属离子包含:在元素周期表中除去第一、第二主族的金属元素外,其它的金属离子都是可以添加的,其中以微量元素金属钯(Pd)或银(Ag,含量小于0.1-2%)和过渡金属(2%-20%)Ni、Co、Fe、Cu、Zn中的一种或几种元素或其金属的络合物。
5)在步骤4)中生成的络合物被含有还原剂(B液)的水溶液还原形成金属核,使其在制备导体轨道的过程中性能稳定,提高了导体轨道与承载材料之间的附着力,进而提高了三维集成电路的质量。
6)在步骤5)中所述的还原剂B液为具有较强还原能力的无机化合物或有机化合物或者几种还原剂的混合。如:联氨、硼氢化合物、次磷酸盐、硫代硫酸盐、联胺、氯化亚锡等。
7)在生成金属核的区域进行化学镀铜、再中磷化学镀镍就形成了金属导体轨道。
化学镀铜的镀铜液配方:pH=12,温度60℃;无水硫酸铜12g/L;酒石酸钾钠43g/L;乙二胺四乙酸二钠14g/L;甲醛(37%)21ml/L;亚铁氰化钾36mg/L;联吡啶0.06g/L;氢氧化钠调pH值;空气搅拌。化学镀铜的速率为2-5微米/小时。
中磷化学镀镍液配方:pH=4.8-5,温度80-86℃,硫酸镍27g/L;次磷酸钠24g/L;醋酸钠15g/L;乳酸30g/L;柠檬酸4g/L;十二烷基硫酸钠1g/L。镀镍的速率为5-13微米/小时,镀层厚度2-3微米。
所述的化学镀铜层的厚度为1-12微米,可选8-12微米。温度60℃,pH=12,镀铜时间约200-300分钟。
所述的构件为手机机壳、手机天线和其它三维集成电路的电子模块、电器连结件等。
所述的特定形状的线路图型是手机天线的形状或需电磁屏蔽区域的形状或其他电路的形状等。
所述非金属光诱导催化剂成份在常温下为固态或液态的一元、二元或三元醇类或一元、二元、三元醛类的单一或组合的有机物或混合物。
本发明适用制造三维立体集成电路和二维平面集成电路结构和材料。
本发明采用化学镀方法,在承载材料上直接进行镀层工艺,去掉了以往常规工艺中的冲击预镀铜工艺,即直接采用常规的化学镀方法,增加镀层的厚度,既:化学镀铜、化学镀镍-磷合金工艺,形成三维集成电路。
在化学镀的溶液中,添加具有络合能力的金属离子,其中包括微量的元素金属钯(Pd)或银(Ag,质量含量小于0.1-2%)和Ni、Co、Fe、Cu、Zn中的一种或几种。由于减少了贵金属的添加,使成本下降5-15%。由于添加了多种金属元素,进行化学镀铜时就有了更高的催化活性和选择性。
本发明是一种新的三维集成电路结构及材料的制造方法,特点是在承载材料上金属化的原理和工艺方法的改变,在三维集成电路的承载材料中不含有任何金属元素的成分,而金属元素成分完全存在于电镀过程中,制备方法是利用激光在结构载体表面镭射出需要金属化的特定区域并将在原料中的非金属光诱导催化剂转变成具有络合作用的基团,使其在后续金属化过程中发生催化作用。这是和其它某些方法的承载材料中含有金属元素成分,利用激光将塑料中的金属元素还原,然后进行金属化的原理和方法是不同的。本发明具体是往承载塑性材料中添加少量非金属光诱导催化剂,主要成分为醇类和/或醛类,使承载材料在激光镭射后,结构中含有30%-50%的非金属光诱导催化剂能形成具有络合作用的催化剂成份,在含有多种形式的金属离子(游离的或以络合的形式)的溶液中,具有络合能力的金属离子先和塑料表面的具有络合作用的催化剂反应生成稳定络合物,此络合物被还原形成金属核,使其在制备导体轨道的过程中,保持了承载材料的原有机械性能,而且性能稳定。提高了导体轨道与承载材料之间的附着力、提高了三维集成电路的质量、降低成本、减少污染。
具体实施方式
实施例1
在注塑机(住友SH160C,日本住友重机械株式会社制造)中将质量为90%的聚对苯二甲酸丁二醇酯和10%的丙三醇(1,2,3-三羟基丙醇)进行均匀混合,颗粒在175℃的温度下,注塑成型,被加工成一个手机机壳。然后使用ND:YAG激光器。以波长为1064nm,在机壳上照射,时间为0.01秒,照射出手机天线的环型形状,并在激光照射的区域,使得承载材料中的非金属光诱导催化剂中的羟基生成羧基,生成了具有络合作用的基团。
室温下将上述得到承载材料放入pH=4的含有14%氯化镍、1%硝酸银的金属离子水溶液中浸泡5分钟,在激光照射过的区域,塑料表面的具有络合作用的非金属光诱导催化剂中的羧基和具有络合能力的银、镍金属离子反应生成稳定络合物。通过原位光谱电化学的测定(Electrochemical Methods;Fundamemals and Applications;Allen J.Bard etc.1980.)证实了镍和银络合物的存在。
将承载材料用蒸馏水清洗后放在含有次磷酸钠25%、联氨8%、pH=5的水溶液中浸泡7分钟,镍和银的络合物被还原形成金属核。
将承载材料用蒸馏水清洗后,再进行化学镀铜和中磷(7<P%<10,质量)化学镀镍;就在激光照射过的区域形成了金属导体轨道。
然后进行化学镀铜:镀铜液配方:pH=12,温度60℃;无水硫酸铜12g/L;酒石酸钾钠43g/L;乙二胺四乙酸二钠14g/L;甲醛(37%)21ml/L;亚铁氰化钾36mg/L;联吡啶0.06g/L;氢氧化钠调pH值;空气搅拌。化学镀铜时间为220分钟。镀铜层厚度为:11微米。
再进行中磷化学镀镍:镀镍液配方:pH=4.85.0,温度84-86℃,硫酸镍27g/L;次磷酸钠24g/L;醋酸钠15g/L;乳酸30g/L;柠檬酸4g/L;十二烷基硫酸钠1g/L。镀镍层的厚度为2微米。镀镍时间为15分钟。
实施例2
在注塑机中用89%质量的聚对苯二甲酸丁二醇酯和含11%质量的2-甲基丙醛进行混合。颗粒在180-185℃下被加工成一个手机机壳。以下操作同实施例1。
通过对实例1和实例2的得到的产品的断裂点和拉伸强度等数据分析和与含有金属元素的塑料材料(SABIC Innovative Plastics公司的10302材料的物料表)的对比可知:在机械性能上比传统工艺有了较大的提高,见表1、表2。
表1
Figure GSB0000123421620000041

Claims (7)

1.一种三维集成电路结构及材料的制造方法,其特征在于它是经过如下的步骤:
1)在热塑性承载材料中加入非金属光诱导催化剂醇类和/或醛类,用注塑机注塑成型为构件,质量含量5-10%;
2)用激光射线在构件的表面照射出的线路图案;
3)室温下浸入pH=4-6的至少含一种金属离子的溶液中,浸泡5-7分钟;
4)用蒸馏水洗后放入pH=5的含有还原剂的水溶液中浸泡5-7分钟,构件的表面生成金属核;
5)在生成金属核的区域进行化学镀铜,镀层厚度为1—12微米,再中磷化学镀镍,镀层厚度为2—3微米;
所述的醇类为固态或液态的一元、二元或三元醇;所述的醛类为固态或液态的一元、二元、三元醛。
2.按照权利要求1所述的方法,其特征在于所述的热塑性承载材料为:ABS、聚碳酸酯、聚对苯二甲酸丁二醇酯。
3.按照权利要求1所述的方法,其特征在于所述的金属离子溶液中为微量元素金属钯、质量含量小于0.1—2%的银或2%—20%的Ni、Co、Fe、Cu或Zn中的一种或几种。
4.按照权利要求1所述的方法,其特征在于所述的还原剂为联氨、硼氢化合物、次磷酸盐、硫代硫酸盐、联胺或氯化亚锡。
5.按照权利要求1所述的方法,其特征在于所述的化学镀铜的镀铜液配方:pH=12,温度60℃;无水硫酸铜12g/L;酒石酸钾钠43g/L;乙二胺四乙酸二钠14g/L;甲醛21ml/L;亚铁氰化钾36mg/L;联吡啶0.06g/L;氢氧化钠调pH值;空气搅拌;化学镀铜的速率为2-5微米/小时。
6.按照权利要求1所述的方法,其特征在于所述的中磷化学镀镍液配方:pH=4.8-5,温度80-86℃,硫酸镍27g/L;次磷酸钠24g/L;醋酸钠15g/L;乳酸30g/L;柠檬酸4g/L;十二烷基硫酸钠1g/L;镀镍的速率为5—13微米/小时。
7.一种三维集成电路结构及材料的制造方法,其特征在于它是经过如下的步骤:
1)在热塑性ABS、聚碳酸酯或聚对苯二甲酸丁二醇酯为基底的承载材料中加入1,2,3—三羟基丙醇或2-甲基丙醛,用注塑机注塑成型为构件,其中,1,2,3—三羟基丙醇或2-甲基丙醛的质量含量5-10%;
2)用激光射线在构件的表面照射出的线路图案;所述的激光射线波长为1064nm,在机壳照射时间为0.01秒;
3)室温下浸入pH=4-6的14%氯化镍、1%硝酸银金属离子的溶液中,浸泡5-7分钟;
4)用蒸留水洗后放入pH=5的含有次磷酸钠25%、联氨8%的水溶液中浸泡7分钟,构件的表面生成相应金属核;
5)进行化学镀铜,镀层厚度为8-12微米,再中磷化学镀镍,镀层厚度为2—3微米;
所述的化学镀铜的镀铜液配方:pH=12,温度60℃;无水硫酸铜12g/L;酒石酸钾钠43g/L;乙二胺四乙酸二钠14g/L;甲醛21ml/L;亚铁氰化钾36mg/L;联吡啶0.06g/L;氢氧化钠调pH值;空气搅拌,化学镀铜的速率为2-5微米/小时;
所述的中磷化学镀镍的镀镍液配方:pH=4.8-5,温度80-86℃,硫酸镍27g/L;次磷酸钠24g/L;醋酸钠15g/L;乳酸30g/L;柠檬酸4g/L;十二烷基硫酸钠1g/L,镀镍的速率为5—13微米/小时。
CN201210016388.5A 2012-01-19 2012-01-19 三维集成电路结构及材料的制造方法 Active CN102543855B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201210016388.5A CN102543855B (zh) 2012-01-19 2012-01-19 三维集成电路结构及材料的制造方法
PCT/CN2012/083820 WO2013107205A1 (zh) 2012-01-19 2012-10-31 三维集成电路结构及材料的制造方法
US14/296,419 US9099528B2 (en) 2012-01-19 2014-06-04 Method for manufacturing three-dimensional integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210016388.5A CN102543855B (zh) 2012-01-19 2012-01-19 三维集成电路结构及材料的制造方法

Publications (2)

Publication Number Publication Date
CN102543855A CN102543855A (zh) 2012-07-04
CN102543855B true CN102543855B (zh) 2014-07-09

Family

ID=46350399

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210016388.5A Active CN102543855B (zh) 2012-01-19 2012-01-19 三维集成电路结构及材料的制造方法

Country Status (3)

Country Link
US (1) US9099528B2 (zh)
CN (1) CN102543855B (zh)
WO (1) WO2013107205A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543855B (zh) * 2012-01-19 2014-07-09 讯创(天津)电子有限公司 三维集成电路结构及材料的制造方法
CN103985536B (zh) * 2014-04-25 2017-02-01 讯创(天津)电子有限公司 三维无线充电线圈的制造方法与装置
CN107148155A (zh) * 2017-06-21 2017-09-08 合肥同佑电子科技有限公司 一种三维集成电路板的制作方法
CN107591607A (zh) * 2017-07-25 2018-01-16 讯创(天津)电子有限公司 一种智能型手机的阵列式5g天线的制备工艺
CN108411286B (zh) * 2018-01-31 2023-11-24 华东师范大学 任意构型三维导电金属微纳结构的制造方法
CN108882541A (zh) * 2018-08-03 2018-11-23 珠海元盛电子科技股份有限公司 一种基于激光反向打印的印刷电路方法
CN111342204A (zh) * 2018-12-19 2020-06-26 讯创(天津)电子有限公司 一种陶瓷材料表面5g三维镭雕天线的制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599592A (en) * 1994-01-31 1997-02-04 Laude; Lucien D. Process for the metallization of plastic materials and products thereto obtained
CN1518850A (zh) * 2001-07-05 2004-08-04 Lpkf激光和电子股份公司 导体轨道结构及其制造方法
CN101873766A (zh) * 2010-06-02 2010-10-27 上海律图表面处理有限公司 导体轨道结构的制造方法
CN102130087A (zh) * 2010-12-10 2011-07-20 郭福春 三维集成电路金属导体轨道及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1062850B1 (de) * 1998-12-10 2007-05-30 LPKF Laser & Electronics Aktiengesellschaft Verfahren zur herstellung von leiterbahnstrukturen
EP1272873A2 (en) * 2000-03-17 2003-01-08 Zograph, LLC High acuity lens system
US7804450B2 (en) * 2007-07-20 2010-09-28 Laird Technologies, Inc. Hybrid antenna structure
CN101859613B (zh) * 2009-04-09 2013-03-27 深圳市微航磁电技术有限公司 立体电路制造工艺
CN102543855B (zh) * 2012-01-19 2014-07-09 讯创(天津)电子有限公司 三维集成电路结构及材料的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599592A (en) * 1994-01-31 1997-02-04 Laude; Lucien D. Process for the metallization of plastic materials and products thereto obtained
CN1518850A (zh) * 2001-07-05 2004-08-04 Lpkf激光和电子股份公司 导体轨道结构及其制造方法
CN101873766A (zh) * 2010-06-02 2010-10-27 上海律图表面处理有限公司 导体轨道结构的制造方法
CN102130087A (zh) * 2010-12-10 2011-07-20 郭福春 三维集成电路金属导体轨道及制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特表2002-532620A 2002.10.02

Also Published As

Publication number Publication date
CN102543855A (zh) 2012-07-04
US20140284849A1 (en) 2014-09-25
US9099528B2 (en) 2015-08-04
WO2013107205A1 (zh) 2013-07-25

Similar Documents

Publication Publication Date Title
CN102543855B (zh) 三维集成电路结构及材料的制造方法
CN109844178B (zh) 一种在聚合物制品表面上形成导电迹线的方法
KR101578585B1 (ko) 플라스틱 기재의 표면을 금속화하는 방법 및 이로 제조한 플라스틱 물품
JP3881338B2 (ja) コンダクタートラック構造物およびその製造方法
JP6317090B2 (ja) 無電解めっきのための方法およびそのために使用される溶液
US9538665B2 (en) Process for electroless copper deposition on laser-direct structured substrates
KR101672474B1 (ko) 레이저 직접 구조화용 코팅제 조성물, 열가소성 수지 조성물 및 이를 이용한 레이저 직접 구조화 방법
CN102130087B (zh) 三维集成电路金属导体轨道及制备方法
TW561804B (en) Circuit board and method of producing the same
KR101626295B1 (ko) 선택적 무전해 도금을 이용한 센서 스트립 제조 방법
CN115023059B (zh) 一种介质材料表面共形导电线路的制造方法
CN111342204A (zh) 一种陶瓷材料表面5g三维镭雕天线的制作方法
KR20200110887A (ko) 자동차 lds 전장 부품용 무전해 중성-중온 니켈도금액
KR20140019175A (ko) 무전해 동 도금용 촉매 용액, 이의 제조방법, 및 이를 이용한 무전해 도금방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Free format text: FORMER OWNER: GUO FUCHUN LIU DONGSHENG

Effective date: 20140115

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20140115

Address after: 300385, No. 4, No. 12, Tian Cheng Industrial Park, Hongyuan Road, Xiqing Economic Development Zone, Tianjin,

Applicant after: INNETECH (TIANJIN) ELECTRONICS Co.,Ltd.

Address before: 300385, No. 4, No. 12, Tian Cheng Industrial Park, Hongyuan Road, Xiqing Economic Development Zone, Tianjin,

Applicant before: INNETECH (TIANJIN) ELECTRONICS Co.,Ltd.

Applicant before: Guo Fuchun

Applicant before: Liu Dongsheng

C14 Grant of patent or utility model
GR01 Patent grant
C53 Correction of patent of invention or patent application
CB03 Change of inventor or designer information

Inventor after: Liu Dongsheng

Inventor after: Zhao Xin

Inventor before: Guo Fuchun

Inventor before: Liu Dongsheng

COR Change of bibliographic data

Free format text: CORRECT: INVENTOR; FROM: GUO FUCHUN LIU DONGSHENG TO: LIU DONGSHENG ZHAO XIN

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Manufacture method of three-dimensional integrated circuit structure and material

Effective date of registration: 20161012

Granted publication date: 20140709

Pledgee: Tianjin Xinsheng pawn Co. Ltd.

Pledgor: INNETECH (TIANJIN) ELECTRONICS Co.,Ltd.

Registration number: 2016120000060

PLDC Enforcement, change and cancellation of contracts on pledge of patent right or utility model
PC01 Cancellation of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Granted publication date: 20140709

Pledgee: Tianjin Xinsheng pawn Co. Ltd.

Pledgor: INNETECH (TIANJIN) ELECTRONICS Co.,Ltd.

Registration number: 2016120000060