US9099528B2 - Method for manufacturing three-dimensional integrated circuit - Google Patents

Method for manufacturing three-dimensional integrated circuit Download PDF

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Publication number
US9099528B2
US9099528B2 US14/296,419 US201414296419A US9099528B2 US 9099528 B2 US9099528 B2 US 9099528B2 US 201414296419 A US201414296419 A US 201414296419A US 9099528 B2 US9099528 B2 US 9099528B2
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Prior art keywords
concentration
structural component
solution
copper plating
plating
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US20140284849A1 (en
Inventor
Dongsheng Liu
Meng Wang
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INNETECH (TIANJIN) ELECTRONICS CO Ltd
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INNETECH (TIANJIN) ELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0053—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1641—Organic substrates, e.g. resin, plastic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1868—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/204—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073—Multistep pretreatment
    • C23C18/208—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0053—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping
    • B29C2045/0079—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping applying a coating or covering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0236—Plating catalyst as filler in insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09118—Moulded substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Definitions

  • the invention relates to a method for manufacturing a three-dimensional integrated circuit.
  • a typical method for manufacturing a three-dimensional integrated circuit includes directly adding a metal chelate to a carrier material and using laser ray to strike the active metal particles to expose them in the air.
  • the method is disadvantageous in that the addition of the metal chelate to the plastic material easily results in damage of the carrier material, adversely affecting its breaking point and tensile strength.
  • the energy of the laser ray directly affects the adherence in the metal plating process and may result in unnecessary conduction of disconnected circuits in the process of electroless copper plating and electroless nickel plating.
  • the additive is not uniformly distributed in the plastic material, which is not conducive to the adhesion of the metal plating layer of the metal conductor track, thereby affecting the preparation of the metal conductor track.
  • the currently used carrier material is prepared by adding copper-containing material to the carrier material.
  • a conventional method for manufacturing metal conductor track includes: striking copper plating for 30 minutes, a first multiple-washing, copper plating for 180 minutes, a second multiple-washing, and electroless nickel plating.
  • a large amount of formaldehyde is used as a reducing agent.
  • formaldehyde is a dangerous environmental pollutant, it is important to limit its use.
  • the method of the invention is characterized in that: no metal elements exist in the carrier material of the three-dimensional integrated circuit, but the metal elements exist in the whole electroless plating process.
  • the method for manufacturing the three-dimensional integrated circuit comprises irradiating the surface of the carrier material with a laser ray to form a specific region needing metallization and further comprises transforming a non-metallic light-induced catalyst in the raw material into groups possessing complexation capability to play catalytic action in subsequent metallization process.
  • the principle and method of the invention is very different from conventional methods that adopt carrier material comprising metal elements and utilize the laser ray to reduce metal elements in the plastic for metallization.
  • a small amount of non-metallic light-induced catalyst comprising an alcohol or an aldehyde is added to the carrier material so that the non-metallic light-induced catalyst is transformed into a catalyst structural component having the complexation capability after the laser irradiation.
  • the metal ions possessing the complexation capability react with the catalyst possessing complexation capability on the surface of the plastic to form a stable complex.
  • the complex is reduced to yield a metal core.
  • a method for manufacturing a three-dimensional integrated circuit comprising:
  • thermoly stable material being selected from a group consisting of an engineering thermoplastic acrylonitrile-butadiene-styrene (ABS), polycarbonate (PC), and polybutylene terephthalate (PBT), and a mixture thereof;
  • a non-metallic light-induced catalyst being in a solid or liquid state and selected from a group consisting of a solid or liquid monohydric alcohol, dihydric alcohol, trihydric alcohol, monoaldehyde, dialdehyde, trialdehyde, a compound thereof, and a mixture thereof; and mechanically mixing the non-metallic light-induced catalyst and the thermally stable material at a temperature of between 150 and 250° C. to yield a plastic comprising the non-metallic light-induced catalyst;
  • a wavelength of the laser ray is between 248 nm and 10600 nm
  • a modulation frequency thereof is between 1 and 1000 K
  • a pulse width is between 4 and 200 ns
  • an average power thereof is between 0.5 and 100 W.
  • a metal ion solution also called a solution A
  • a metal ion solution comprising metal ions and having a pH value of between 4 and 6 for between 5 and 7 minutes.
  • the metal ions having the complexation capability in the solution A in step 4) comprise metal ions in the periodic table of elements except for the first and the second main groups.
  • the metal ions in the metal ion solution are a trace amount of Pd, between 0.1 and 2 wt. % of silver, between 1 and 20 wt. % of Ni, Co, Fe, Cu, or Zn, or a mixture thereof, or a complex thereof.
  • step 4) reducing the complex obtained in step 4) by an aqueous solution (solution B) comprising a reducing agent to form a metal core;
  • solution B aqueous solution
  • the metal core has a stable performance during the preparation of the conductor track, the adhesion force between the conductor track and the carrier material is increased, and the quality of the three-dimensional integrated circuit is further improved.
  • the reducing agent of the solution B is an inorganic compound or an organic compound having a relatively strong reducing capability, or a mixture thereof.
  • a relatively strong reducing capability for example, hydrazine, a borohydride compound, a hypophosphite, a thiosulfate, diamide, or stannous chloride.
  • the electroless copper plating is performed in a copper plating solution in the presence of air agitation at 60° C.
  • a velocity for the electroless copper plating is between 2 and 5 ⁇ m/hr.
  • the copper plating solution comprises: anhydrous copper sulfate having a concentration of 12 g/L, potassium sodium tartrate having a concentration of 43 g/L, disodium ethylenediamine tetraacetate having a concentration of 14 g/L, formaldehyde having a concentration of 21 mL/L, potassium ferrocyanide having a concentration of 36 mg/L, and bipyridine having a concentration of 0.06 g/L, and the pH value thereof is maintained at 12 by adding sodium hydroxide.
  • the medium-phosphorus electroless nickel plating is performed in a medium-phosphorus electroless nickel solution.
  • a velocity for the electroless nickel plating is between 5 and 13 ⁇ m/hr, and a plating thickness is between 2 and 3 ⁇ m.
  • the medium-phosphorus electroless nickel solution comprises: nickel sulfate having a concentration of 27 g/L, sodium hypophosphite having a concentration of 24 g/L, sodium acetate having a concentration of 15 g/L, lactic acid having a concentration of 30 g/L, citric acid having a concentration of 4 g/L, and sodium dodecyl sulfate having a concentration of 1 g/L.
  • the medium-phosphorus electroless nickel solution is prepared at a temperature of between 80 and 86° C., and a PH value thereof is adjusted to be between 4.8 and 5.
  • a thickness of an electroless copper plating layer is between 1 and 12 ⁇ m, and preferably between 8 and 12 ⁇ m.
  • a time for the electroless copper plating is between 200 and 300 minutes.
  • the structural component is a casing of a cell phone, an antenna of a cell phone, or an electronic module or an electric connection piece of other three-dimensional integrated circuits.
  • the non-metallic light-induced catalyst is in a solid or liquid state at room temperature and is selected from the group consisting of the monohydric alcohol, the dihydric alcohol, the trihydric alcohol, the monoaldehyde, the dialdehyde, the trialdehyde, the compound thereof, and the mixture thereof.
  • thermoplastic carrier material To the thermoplastic carrier material, some other non-metallic light-induced catalysts are added.
  • the non-metallic light-induced catalysts comprise an alkane, alkene, alkyne, ether, ketone, ester, and heterocyclic compounds that are able to be oxidized into acids in certain conditions.
  • the thermoplastic carrier material is a mixture comprising at least two of ABS, PC, and PBT.
  • the method is applicable to manufacture the three-dimensional and two-dimensional integrated circuit.
  • the electroless plating method of the invention deletes the striking process of pre-copper plating and directly performs electroless plating on the carrier material by using the common electroless plating methods, that is, the electroless copper plating and electroless nickel-phosphorus plating process, for increasing the plating thickness and forming the three-dimensional circuit.
  • the metal ions possessing the complexation capability are added and the metal ions are a trace amount of Pd, between 0.1 and 2 wt. % of silver, Ni, Co, Fe, Cu, or Zn, or a mixture thereof.
  • the addition of the precious metals is decreased, the production cost is decreased by between 5% and 15%.
  • the catalyst activity and the selectivity are highly improved during the electroless copper plating due to the addition of various of metal elements.
  • the method for manufacturing the three-dimensional integrated circuit focuses on the improvements on the principal and the process of the metallization of the carrier material.
  • the method of the invention is characterized in that no metal elements exist in the carrier material of the three-dimensional integrated circuit, but the metal elements exist in the whole electroless plating process.
  • the method comprises irradiating the surface of the carrier material with the laser ray to form the specific region needing metallization, and transforming non-metallic light-induced catalyst of the raw material into groups possessing complexation capability to play catalytic action in subsequent metallization process.
  • the principle and method of the invention is very different from conventional methods that adopt carrier material comprising metal elements and utilize the laser ray to reduce metal elements in the plastic for metallization.
  • a small amount of the non-metallic light-induced catalyst comprising the alcohol or the aldehyde is added to the carrier material so that the non-metallic light-induced catalyst is transformed into the catalyst structural component having the complexation capability after the laser irradiation.
  • the metal ions possessing the complexation capability first react with the catalyst possessing complexation capability on the surface of the plastic to form the stable complex. Thereafter, the complex is reduced to yield the metal core.
  • the original stable mechanical performance of the carrier material is maintained during the manufacture process of the conductor track.
  • the adhesion force between the conductor track and the carrier material, and the quality of the three-dimensional integrated circuit are improved while the production cost and the pollution are decreased.
  • the carrier material was immersed into a metal ion solution comprising 14 wt. % of nickel chloride and 1 wt. % of silver nitrate and having a pH value of 4 at room temperature for 5 minutes.
  • the existence of the nickel complexes and the silver complexes were demonstrated by the in situ spectro electrochemical measurements (Electrochemical Methods; Fundamentals and Applications; Allen J. Bard etc. 1980).
  • the carrier material was washed by distilled water and was then immersed into an aqueous solution having a pH value of 5 and comprising 25 wt. % of sodium hypophosphite and 8 wt. % of hydrazine to reduce the nickel complexes and the silver complexes into metal cores.
  • the carrier material was washed by distilled water again, and electroless copper plating and medium-phosphorus (7 wt. % ⁇ P ⁇ 10 wt. %) electroless nickel plating were respectively conducted to yield a metal conductor track on the irradiated region.
  • a copper plating solution comprised: anhydrous copper sulfate having a concentration of 12 g/L, potassium sodium tartrate having a concentration of 43 g/L, disodium ethylenediamine tetraacetate having a concentration of 14 g/L, formaldehyde (37 wt. %) having a concentration of 21 mL/L, potassium ferrocyanide having a concentration of 36 mg/L, and bipyridine having a concentration of 0.06 g/L.
  • the copper plating solution was air agitated at the temperature of 60° C. Thereafter, sodium hydroxide was added to the copper plating solution to adjust the pH value to be 12.
  • the electroless copper plating was performed in the copper plating solution and lasted for 220 minutes. A thickness of the copper plating layer was 11 ⁇ m.
  • a medium-phosphorus nickel plating solution comprised: nickel sulfate having a concentration of 27 g/L, sodium hypophosphite having a concentration of 24 g/L, sodium acetate having a concentration of 15 g/L, lactic acid having a concentration of 30 g/L, citric acid having a concentration of 4 g/L, and sodium dodecyl sulfate having a concentration of 1 g/L.
  • the medium-phosphorus nickel plating solution was prepared at the temperature of between 84 and 86° C. Thereafter, the PH value of the medium-phosphorus nickel plating solution was adjusted to be between 4.8 and 5.
  • the medium-phosphorus electroless nickel plating was performed in the medium-phosphorus electroless nickel solution and lasted for 15 minutes, and a thickness of the nickel plating layer was 2 ⁇ m.
  • nickel chloride in the metal ion solution can be replaced by nickel nitrate while other conditions remain the same.
  • the method for manufacturing a three-dimensional integrated circuit is the same as that in Example 1 except that 83 wt. % of PBT, 11 wt. % of nano titanium dioxide, and 6 wt. % of 2-methyl propanal were mixed in an injection molding machine to yield a mixture; the mixture was processed to form a cell phone casing at the temperature of between 180 and 185° C.; and a specific shaped region on the cell phone casing was irradiated to transform formyl groups of the non-metallic light-induced catalyst of the carrier material into carboxyl groups.
  • the carrier material was immersed into a metal ion solution comprising 10 wt. % of nickel nitrate and 1 wt. % of silver nitrate and having a pH value of 4 at room temperature for 5 minutes.
  • the carboxyl groups of the non-metallic light-induced catalyst on the plastic surface of the laser irradiated region reacted with the silver and nickel metal ions in the metal ion aqueous to form stable complexes.
  • the carrier material was washed by distilled water and was then immersed into an aqueous solution having a pH value of 5 and comprising 25 wt. % of sodium hypophosphite and 8 wt. % of hydrazine to reduce the nickel complexes and the silver complexes into metal cores.
  • a copper plating solution comprised: anhydrous copper sulfate having a concentration of 12 g/L, potassium sodium tartrate having a concentration of 43 g/L, disodium ethylenediamine tetraacetate having a concentration of 10 g/L, formaldehyde (37 wt. %) having a concentration of 21 mL/L, potassium ferrocyanide having a concentration of 36 mg/L, and bipyridine having a concentration of 0.06 g/L.
  • the copper plating solution was then air agitated at the temperature of 60° C. Thereafter, sodium hydroxide was added to the copper plating solution to adjust the pH value to be 13.
  • the electroless copper plating was carried out in the copper plating solution and lasted for 200 minutes. A thickness of the copper plating layer was 11 ⁇ m.
  • a low-phosphorus electroless nickel solution comprised: nickel sulfate having a concentration of 27 g/L, sodium hypophosphite having a concentration of 20 g/L, sodium acetate having a concentration of 15 g/L, lactic acid having a concentration of 30 g/L, citric acid having a concentration of 4 g/L, and sodium dodecyl sulfate having a concentration of 1 g/L.
  • the low-phosphorus electroless nickel solution was prepared at the temperature of between 80 and 82° C., and thereafter, the pH value of the low-phosphorus electroless nickel solution was adjusted to be between 5.6 and 6.
  • the low-phosphorus electroless nickel plating was performed in the low-phosphorus electroless nickel solution and lasted for 25 minutes, and a thickness of the nickel plating layer was 2 ⁇ m.
  • the method for manufacturing a three-dimensional integrated circuit is the same as that in Example 3 except that 84 wt. % of PBT, 10 wt. % of nano titanium dioxide, and 6 wt. % of 3,4-dimethyl-1-pentene were mixed in an injection molding machine to yield a mixture; the mixture was then processed at the temperature of between 183 and 185° C. to form a cell phone casing; and a specific shaped region on the cell phone casing was irradiated to transform alkenyl groups of the non-metallic light-induced catalyst of the carrier material into carboxyl groups.

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CN103985536B (zh) * 2014-04-25 2017-02-01 讯创(天津)电子有限公司 三维无线充电线圈的制造方法与装置
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