JP2012129505A5 - - Google Patents
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- Publication number
- JP2012129505A5 JP2012129505A5 JP2011242366A JP2011242366A JP2012129505A5 JP 2012129505 A5 JP2012129505 A5 JP 2012129505A5 JP 2011242366 A JP2011242366 A JP 2011242366A JP 2011242366 A JP2011242366 A JP 2011242366A JP 2012129505 A5 JP2012129505 A5 JP 2012129505A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reflective
- absorber
- antireflection
- layer containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Claims (1)
- 前記吸収層は、タンタルの窒化物を含む吸収体層と、タンタルの酸化物を含む反射防止層と、を有し、
前記反射層は、モリブデンとシリコンとを含み、
前記遮光領域を形成する工程において、
前記吸収体層と、前記反射防止層と、前記反射層と、を相互に離隔された環境でそれぞれエッチング処理する請求項１〜６のいずれか１つに記載の反射型マスクの製造方法。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011242366A JP6013720B2 (ja) | 2010-11-22 | 2011-11-04 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
| US13/300,722 US8702901B2 (en) | 2010-11-22 | 2011-11-21 | Method for manufacturing reflective mask and apparatus for manufacturing reflective mask |
| TW100142797A TWI477889B (zh) | 2010-11-22 | 2011-11-22 | 反射型遮罩之製造方法及用於製造反射型遮罩之裝置 |
| KR1020110122519A KR101302805B1 (ko) | 2010-11-22 | 2011-11-22 | 반사형 마스크의 제조 방법 및 반사형 마스크의 제조 장치 |
| US14/197,549 US9507251B2 (en) | 2010-11-22 | 2014-03-05 | Method for manufacturing reflective mask and apparatus for manufacturing reflective mask |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010259851 | 2010-11-22 | ||
| JP2010259851 | 2010-11-22 | ||
| JP2011242366A JP6013720B2 (ja) | 2010-11-22 | 2011-11-04 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012129505A JP2012129505A (ja) | 2012-07-05 |
| JP2012129505A5 true JP2012129505A5 (ja) | 2014-12-04 |
| JP6013720B2 JP6013720B2 (ja) | 2016-10-25 |
Family
ID=46064663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011242366A Active JP6013720B2 (ja) | 2010-11-22 | 2011-11-04 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8702901B2 (ja) |
| JP (1) | JP6013720B2 (ja) |
| KR (1) | KR101302805B1 (ja) |
| TW (1) | TWI477889B (ja) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6226517B2 (ja) * | 2012-09-11 | 2017-11-08 | 芝浦メカトロニクス株式会社 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
| US8778574B2 (en) * | 2012-11-30 | 2014-07-15 | Applied Materials, Inc. | Method for etching EUV material layers utilized to form a photomask |
| US9612521B2 (en) | 2013-03-12 | 2017-04-04 | Applied Materials, Inc. | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US20140272684A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| US9632411B2 (en) | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US9417515B2 (en) | 2013-03-14 | 2016-08-16 | Applied Materials, Inc. | Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor |
| KR102109129B1 (ko) | 2013-07-02 | 2020-05-08 | 삼성전자주식회사 | 반사형 포토마스크 블랭크 및 반사형 포토마스크 |
| US9581889B2 (en) | 2014-07-11 | 2017-02-28 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor |
| US9612522B2 (en) * | 2014-07-11 | 2017-04-04 | Applied Materials, Inc. | Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor |
| TWI774375B (zh) | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
| TWI763686B (zh) | 2016-07-27 | 2022-05-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統 |
| JP6288327B2 (ja) * | 2017-02-06 | 2018-03-07 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
| TWI713716B (zh) * | 2017-03-28 | 2020-12-21 | 聯華電子股份有限公司 | 極紫外線光罩及其製造方法 |
| JP6451884B2 (ja) * | 2018-02-07 | 2019-01-16 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
| TW202026770A (zh) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
| TW202028495A (zh) | 2018-12-21 | 2020-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收器及用於製造的方法 |
| TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線（ｅｕｖ）遮罩素材及其製造方法 |
| TW202035792A (zh) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收體材料 |
| US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11639544B2 (en) | 2019-03-01 | 2023-05-02 | Applied Materials, Inc. | Physical vapor deposition system and processes |
| TWI818151B (zh) | 2019-03-01 | 2023-10-11 | 美商應用材料股份有限公司 | 物理氣相沉積腔室及其操作方法 |
| TW202043905A (zh) | 2019-03-01 | 2020-12-01 | 美商應用材料股份有限公司 | 物理氣相沉積系統與處理 |
| TW202111420A (zh) | 2019-05-22 | 2021-03-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11366379B2 (en) | 2019-05-22 | 2022-06-21 | Applied Materials Inc. | Extreme ultraviolet mask with embedded absorber layer |
| TW202104666A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| US11275303B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
| TW202104667A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11385536B2 (en) | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
| US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TWI817073B (zh) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
| TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
| TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11644741B2 (en) | 2020-04-17 | 2023-05-09 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TW202202641A (zh) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收劑材料 |
| US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11815803B2 (en) | 2021-08-30 | 2023-11-14 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflector materials |
| US11782337B2 (en) | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162276A (ja) * | 1983-03-07 | 1984-09-13 | Toshiba Corp | 反応性イオンエツチング方法 |
| JPS6385553A (ja) | 1986-09-30 | 1988-04-16 | Toshiba Corp | マスク基板およびマスクパタ−ンの形成方法 |
| JPH01212778A (ja) * | 1988-02-18 | 1989-08-25 | Applied Materials Japan Kk | Ｓｉのエッチングガスおよびエッチング方法 |
| JPH08279487A (ja) * | 1993-05-20 | 1996-10-22 | Hitachi Ltd | プラズマ処理方法 |
| JP3386651B2 (ja) * | 1996-04-03 | 2003-03-17 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
| JP3995784B2 (ja) * | 1998-02-24 | 2007-10-24 | Ｈｏｙａ株式会社 | ドライエッチング方法、及びｘ線マスクの製造方法 |
| US6673520B2 (en) * | 2001-08-24 | 2004-01-06 | Motorola, Inc. | Method of making an integrated circuit using a reflective mask |
| JP2003114514A (ja) * | 2001-10-02 | 2003-04-18 | Sharp Corp | マスクを用いたパターンの転写方法、ハーフトーンマスク、及びその製造方法、並びに回路基板の製造方法 |
| JP4163038B2 (ja) * | 2002-04-15 | 2008-10-08 | Ｈｏｙａ株式会社 | 反射型マスクブランク及び反射型マスク並びに半導体の製造方法 |
| JP4465405B2 (ja) | 2008-02-27 | 2010-05-19 | Ｈｏｙａ株式会社 | フォトマスクブランクおよびフォトマスク並びにこれらの製造方法 |
| JP4602430B2 (ja) * | 2008-03-03 | 2010-12-22 | 株式会社東芝 | 反射型マスク及びその作製方法 |
| US8372564B2 (en) | 2008-05-09 | 2013-02-12 | Hoya Corporation | Reflective mask, reflective mask blank and method of manufacturing reflective mask |
-
2011
- 2011-11-04 JP JP2011242366A patent/JP6013720B2/ja active Active
- 2011-11-21 US US13/300,722 patent/US8702901B2/en active Active
- 2011-11-22 KR KR1020110122519A patent/KR101302805B1/ko active IP Right Grant
- 2011-11-22 TW TW100142797A patent/TWI477889B/zh active
-
2014
- 2014-03-05 US US14/197,549 patent/US9507251B2/en active Active
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