JP2012089643A - 記憶装置の製造方法、並びに記憶素子および記憶装置 - Google Patents

記憶装置の製造方法、並びに記憶素子および記憶装置 Download PDF

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Publication number
JP2012089643A
JP2012089643A JP2010234414A JP2010234414A JP2012089643A JP 2012089643 A JP2012089643 A JP 2012089643A JP 2010234414 A JP2010234414 A JP 2010234414A JP 2010234414 A JP2010234414 A JP 2010234414A JP 2012089643 A JP2012089643 A JP 2012089643A
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Japan
Prior art keywords
material film
memory
layer
lower electrode
upper electrode
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Pending
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JP2010234414A
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English (en)
Japanese (ja)
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JP2012089643A5 (enExample
Inventor
Koji Miyata
幸児 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010234414A priority Critical patent/JP2012089643A/ja
Priority to CN201110299670.4A priority patent/CN102456833B/zh
Priority to US13/271,537 priority patent/US9118005B2/en
Publication of JP2012089643A publication Critical patent/JP2012089643A/ja
Publication of JP2012089643A5 publication Critical patent/JP2012089643A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2010234414A 2010-10-19 2010-10-19 記憶装置の製造方法、並びに記憶素子および記憶装置 Pending JP2012089643A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010234414A JP2012089643A (ja) 2010-10-19 2010-10-19 記憶装置の製造方法、並びに記憶素子および記憶装置
CN201110299670.4A CN102456833B (zh) 2010-10-19 2011-09-30 存储装置的制造方法、存储器件以及存储装置
US13/271,537 US9118005B2 (en) 2010-10-19 2011-10-12 Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010234414A JP2012089643A (ja) 2010-10-19 2010-10-19 記憶装置の製造方法、並びに記憶素子および記憶装置

Publications (2)

Publication Number Publication Date
JP2012089643A true JP2012089643A (ja) 2012-05-10
JP2012089643A5 JP2012089643A5 (enExample) 2013-11-28

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JP2010234414A Pending JP2012089643A (ja) 2010-10-19 2010-10-19 記憶装置の製造方法、並びに記憶素子および記憶装置

Country Status (3)

Country Link
US (1) US9118005B2 (enExample)
JP (1) JP2012089643A (enExample)
CN (1) CN102456833B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016512390A (ja) * 2013-03-03 2016-04-25 アデスト テクノロジーズ コーポレーションＡｄｅｓｔｏ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐｏｒａｔｉｏｎ スイッチング層および中間電極層を有した抵抗性スイッチングデバイス並びにその形成方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9680094B2 (en) * 2012-08-30 2017-06-13 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
CN103855300B (zh) * 2012-12-04 2017-03-29 中芯国际集成电路制造(上海)有限公司 相变存储器及其形成方法
US12376315B2 (en) 2022-07-18 2025-07-29 Globalfoundries U.S. Inc. Resistive memory element arrays with shared electrode strips

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229537A (ja) * 2002-02-01 2003-08-15 Hitachi Ltd 半導体記憶装置及びその製造方法
WO2008117371A1 (ja) * 2007-03-23 2008-10-02 Fujitsu Limited 抵抗記憶素子及び不揮発性半導体記憶装置
JP2009043758A (ja) * 2007-08-06 2009-02-26 Sony Corp 記憶素子および記憶装置
US20090134432A1 (en) * 2007-11-22 2009-05-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
JP2009181971A (ja) * 2008-01-29 2009-08-13 Hitachi Ltd 不揮発性記憶装置およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830275B2 (ja) * 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
DE102005001902B4 (de) * 2005-01-14 2009-07-02 Qimonda Ag Verfahren zur Herstellung einer sublithographischen Kontaktstruktur in einer Speicherzelle
KR101213702B1 (ko) * 2006-04-21 2012-12-18 삼성전자주식회사 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법
WO2010079816A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 半導体装置及びその製造方法
JP4810581B2 (ja) * 2009-03-25 2011-11-09 株式会社東芝 不揮発性記憶装置
JP5446393B2 (ja) * 2009-04-02 2014-03-19 ソニー株式会社 記憶素子とその製造方法および半導体記憶装置
JP2011054873A (ja) * 2009-09-04 2011-03-17 Sony Corp 不揮発性メモリ素子の製造方法
JP2011124511A (ja) * 2009-12-14 2011-06-23 Sony Corp 記憶素子および記憶装置
JP2011211101A (ja) * 2010-03-30 2011-10-20 Sony Corp 記憶素子及びその製造方法
JP2012084765A (ja) * 2010-10-14 2012-04-26 Sony Corp 不揮発性メモリ素子及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229537A (ja) * 2002-02-01 2003-08-15 Hitachi Ltd 半導体記憶装置及びその製造方法
WO2008117371A1 (ja) * 2007-03-23 2008-10-02 Fujitsu Limited 抵抗記憶素子及び不揮発性半導体記憶装置
JP2009043758A (ja) * 2007-08-06 2009-02-26 Sony Corp 記憶素子および記憶装置
US20090134432A1 (en) * 2007-11-22 2009-05-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
JP2009130140A (ja) * 2007-11-22 2009-06-11 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2009181971A (ja) * 2008-01-29 2009-08-13 Hitachi Ltd 不揮発性記憶装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016512390A (ja) * 2013-03-03 2016-04-25 アデスト テクノロジーズ コーポレーションＡｄｅｓｔｏ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐｏｒａｔｉｏｎ スイッチング層および中間電極層を有した抵抗性スイッチングデバイス並びにその形成方法

Also Published As

Publication number Publication date
CN102456833A (zh) 2012-05-16
US20120091428A1 (en) 2012-04-19
US9118005B2 (en) 2015-08-25
CN102456833B (zh) 2016-04-27

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