JP2012089643A5 - - Google Patents
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- Publication number
- JP2012089643A5 JP2012089643A5 JP2010234414A JP2010234414A JP2012089643A5 JP 2012089643 A5 JP2012089643 A5 JP 2012089643A5 JP 2010234414 A JP2010234414 A JP 2010234414A JP 2010234414 A JP2010234414 A JP 2010234414A JP 2012089643 A5 JP2012089643 A5 JP 2012089643A5
- Authority
- JP
- Japan
- Prior art keywords
- material film
- layer material
- memory
- memory layer
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims 2
- 239000011669 selenium Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 229910052798 chalcogen Inorganic materials 0.000 claims 1
- 150000001787 chalcogens Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 239000007772 electrode material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010234414A JP2012089643A (ja) | 2010-10-19 | 2010-10-19 | 記憶装置の製造方法、並びに記憶素子および記憶装置 |
| CN201110299670.4A CN102456833B (zh) | 2010-10-19 | 2011-09-30 | 存储装置的制造方法、存储器件以及存储装置 |
| US13/271,537 US9118005B2 (en) | 2010-10-19 | 2011-10-12 | Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010234414A JP2012089643A (ja) | 2010-10-19 | 2010-10-19 | 記憶装置の製造方法、並びに記憶素子および記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012089643A JP2012089643A (ja) | 2012-05-10 |
| JP2012089643A5 true JP2012089643A5 (enExample) | 2013-11-28 |
Family
ID=45933356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010234414A Pending JP2012089643A (ja) | 2010-10-19 | 2010-10-19 | 記憶装置の製造方法、並びに記憶素子および記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9118005B2 (enExample) |
| JP (1) | JP2012089643A (enExample) |
| CN (1) | CN102456833B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9680094B2 (en) * | 2012-08-30 | 2017-06-13 | Kabushiki Kaisha Toshiba | Memory device and method for manufacturing the same |
| CN103855300B (zh) * | 2012-12-04 | 2017-03-29 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
| US9252359B2 (en) * | 2013-03-03 | 2016-02-02 | Adesto Technologies Corporation | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof |
| US12376315B2 (en) | 2022-07-18 | 2025-07-29 | Globalfoundries U.S. Inc. | Resistive memory element arrays with shared electrode strips |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3948292B2 (ja) * | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
| JP4830275B2 (ja) * | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
| DE102005001902B4 (de) * | 2005-01-14 | 2009-07-02 | Qimonda Ag | Verfahren zur Herstellung einer sublithographischen Kontaktstruktur in einer Speicherzelle |
| KR101213702B1 (ko) * | 2006-04-21 | 2012-12-18 | 삼성전자주식회사 | 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법 |
| WO2008117371A1 (ja) * | 2007-03-23 | 2008-10-02 | Fujitsu Limited | 抵抗記憶素子及び不揮発性半導体記憶装置 |
| JP4539885B2 (ja) * | 2007-08-06 | 2010-09-08 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP5175526B2 (ja) * | 2007-11-22 | 2013-04-03 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| JP5268376B2 (ja) * | 2008-01-29 | 2013-08-21 | 株式会社日立製作所 | 不揮発性記憶装置およびその製造方法 |
| WO2010079816A1 (ja) * | 2009-01-09 | 2010-07-15 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP4810581B2 (ja) * | 2009-03-25 | 2011-11-09 | 株式会社東芝 | 不揮発性記憶装置 |
| JP5446393B2 (ja) * | 2009-04-02 | 2014-03-19 | ソニー株式会社 | 記憶素子とその製造方法および半導体記憶装置 |
| JP2011054873A (ja) * | 2009-09-04 | 2011-03-17 | Sony Corp | 不揮発性メモリ素子の製造方法 |
| JP2011124511A (ja) * | 2009-12-14 | 2011-06-23 | Sony Corp | 記憶素子および記憶装置 |
| JP2011211101A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 記憶素子及びその製造方法 |
| JP2012084765A (ja) * | 2010-10-14 | 2012-04-26 | Sony Corp | 不揮発性メモリ素子及びその製造方法 |
-
2010
- 2010-10-19 JP JP2010234414A patent/JP2012089643A/ja active Pending
-
2011
- 2011-09-30 CN CN201110299670.4A patent/CN102456833B/zh not_active Expired - Fee Related
- 2011-10-12 US US13/271,537 patent/US9118005B2/en not_active Expired - Fee Related