JP2011501420A5 - - Google Patents

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Publication number
JP2011501420A5
JP2011501420A5 JP2010529069A JP2010529069A JP2011501420A5 JP 2011501420 A5 JP2011501420 A5 JP 2011501420A5 JP 2010529069 A JP2010529069 A JP 2010529069A JP 2010529069 A JP2010529069 A JP 2010529069A JP 2011501420 A5 JP2011501420 A5 JP 2011501420A5
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JP
Japan
Prior art keywords
memory device
free magnetic
layer
intermediate layer
magnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010529069A
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English (en)
Japanese (ja)
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JP2011501420A (ja
Filing date
Publication date
Priority claimed from US11/870,856 external-priority patent/US7932571B2/en
Application filed filed Critical
Publication of JP2011501420A publication Critical patent/JP2011501420A/ja
Publication of JP2011501420A5 publication Critical patent/JP2011501420A5/ja
Pending legal-status Critical Current

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JP2010529069A 2007-10-11 2008-10-10 低電流密度を有する磁気要素 Pending JP2011501420A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/870,856 US7932571B2 (en) 2007-10-11 2007-10-11 Magnetic element having reduced current density
PCT/US2008/079471 WO2009049122A1 (en) 2007-10-11 2008-10-10 Magnetic element having reduced current density

Publications (2)

Publication Number Publication Date
JP2011501420A JP2011501420A (ja) 2011-01-06
JP2011501420A5 true JP2011501420A5 (enExample) 2012-03-01

Family

ID=40083579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010529069A Pending JP2011501420A (ja) 2007-10-11 2008-10-10 低電流密度を有する磁気要素

Country Status (5)

Country Link
US (2) US7932571B2 (enExample)
EP (2) EP2201570B1 (enExample)
JP (1) JP2011501420A (enExample)
CN (1) CN101861622B (enExample)
WO (1) WO2009049122A1 (enExample)

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KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
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US9472750B2 (en) * 2015-01-05 2016-10-18 Samsung Electronics Co., Ltd. Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
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US10964468B2 (en) * 2019-07-12 2021-03-30 The Regents Of The University Of California Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching
JP2021044444A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 磁気記憶装置
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JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
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JP4997789B2 (ja) 2006-02-23 2012-08-08 Ｔｄｋ株式会社 磁気メモリ
JP2007305882A (ja) 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ

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