JP2011501420A - 低電流密度を有する磁気要素 - Google Patents

低電流密度を有する磁気要素 Download PDF

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Publication number
JP2011501420A
JP2011501420A JP2010529069A JP2010529069A JP2011501420A JP 2011501420 A JP2011501420 A JP 2011501420A JP 2010529069 A JP2010529069 A JP 2010529069A JP 2010529069 A JP2010529069 A JP 2010529069A JP 2011501420 A JP2011501420 A JP 2011501420A
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Japan
Prior art keywords
layer
free magnetic
memory device
magnetic layer
free
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JP2010529069A
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English (en)
Japanese (ja)
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JP2011501420A5 (enExample
Inventor
リゾ、ニコラス
メイザー、フィリップ
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Everspin Technologies Inc
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Everspin Technologies Inc
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Publication of JP2011501420A publication Critical patent/JP2011501420A/ja
Publication of JP2011501420A5 publication Critical patent/JP2011501420A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2010529069A 2007-10-11 2008-10-10 低電流密度を有する磁気要素 Pending JP2011501420A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/870,856 US7932571B2 (en) 2007-10-11 2007-10-11 Magnetic element having reduced current density
PCT/US2008/079471 WO2009049122A1 (en) 2007-10-11 2008-10-10 Magnetic element having reduced current density

Publications (2)

Publication Number Publication Date
JP2011501420A true JP2011501420A (ja) 2011-01-06
JP2011501420A5 JP2011501420A5 (enExample) 2012-03-01

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Family Applications (1)

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JP2010529069A Pending JP2011501420A (ja) 2007-10-11 2008-10-10 低電流密度を有する磁気要素

Country Status (5)

Country Link
US (2) US7932571B2 (enExample)
EP (2) EP3232440B1 (enExample)
JP (1) JP2011501420A (enExample)
CN (1) CN101861622B (enExample)
WO (1) WO2009049122A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013016645A (ja) * 2011-07-04 2013-01-24 Toshiba Corp 磁気抵抗素子、磁気メモリ及び磁気抵抗素子の製造方法
JP2016063088A (ja) * 2014-09-18 2016-04-25 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 磁気トンネル接合素子及び磁気ランダムアクセスメモリ
JP2018515923A (ja) * 2015-05-07 2018-06-14 マイクロン テクノロジー， インク． 磁気トンネル接合
US10374149B2 (en) 2016-05-13 2019-08-06 Micron Technology, Inc. Magnetic tunnel junctions
JP2022132288A (ja) * 2019-04-26 2022-09-08 Tdk株式会社 磁気抵抗効果素子

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JP5361201B2 (ja) * 2008-01-30 2013-12-04 株式会社東芝 磁気抵抗効果素子の製造方法
US7965543B2 (en) * 2009-04-30 2011-06-21 Everspin Technologies, Inc. Method for reducing current density in a magnetoelectronic device
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
US8558331B2 (en) * 2009-12-08 2013-10-15 Qualcomm Incorporated Magnetic tunnel junction device
TWI398973B (zh) * 2009-12-31 2013-06-11 Ind Tech Res Inst 垂直式磁性磁阻元件結構
JP2013101989A (ja) * 2010-02-10 2013-05-23 Hitachi Ltd 強磁性トンネル接合素子
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
KR101766899B1 (ko) * 2010-04-21 2017-08-10 삼성전자주식회사 자기 메모리 소자
US8772886B2 (en) * 2010-07-26 2014-07-08 Avalanche Technology, Inc. Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
US8358534B2 (en) 2010-09-17 2013-01-22 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8310868B2 (en) 2010-09-17 2012-11-13 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8300454B2 (en) 2010-09-17 2012-10-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US9666639B2 (en) 2010-09-17 2017-05-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8531802B2 (en) * 2010-12-17 2013-09-10 Seagate Technology Llc Magnetic structure free layer stabilization
US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US8432009B2 (en) 2010-12-31 2013-04-30 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US8492859B2 (en) * 2011-02-15 2013-07-23 International Business Machines Corporation Magnetic tunnel junction with spacer layer for spin torque switched MRAM
US20120267733A1 (en) 2011-04-25 2012-10-25 International Business Machines Corporation Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
US8686484B2 (en) 2011-06-10 2014-04-01 Everspin Technologies, Inc. Spin-torque magnetoresistive memory element and method of fabricating same
US8766383B2 (en) * 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115400A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
US9042164B2 (en) 2012-03-26 2015-05-26 Honeywell International Inc. Anti-tampering devices and techniques for magnetoresistive random access memory
US8767432B1 (en) 2012-12-11 2014-07-01 International Business Machines Corporation Method and apparatus for controlled application of Oersted field to magnetic memory structure
US8981505B2 (en) * 2013-01-11 2015-03-17 Headway Technologies, Inc. Mg discontinuous insertion layer for improving MTJ shunt
US9240547B2 (en) 2013-09-10 2016-01-19 Micron Technology, Inc. Magnetic tunnel junctions and methods of forming magnetic tunnel junctions
US9344345B2 (en) 2014-03-19 2016-05-17 Micron Technology, Inc. Memory cells having a self-aligning polarizer
SG10201401676XA (en) 2014-04-21 2015-11-27 Micron Technology Inc Spin transfer torque memory cells
US20160087194A1 (en) * 2014-09-18 2016-03-24 Samsung Electronics Co., Ltd. Magnetic tunnel junction device and magnetoresistive random access memory
US9472750B2 (en) * 2015-01-05 2016-10-18 Samsung Electronics Co., Ltd. Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
US9559143B2 (en) * 2015-01-05 2017-01-31 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including free layers that are cobalt-free
US9502642B2 (en) 2015-04-10 2016-11-22 Micron Technology, Inc. Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
US9520553B2 (en) 2015-04-15 2016-12-13 Micron Technology, Inc. Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction
US9530959B2 (en) 2015-04-15 2016-12-27 Micron Technology, Inc. Magnetic tunnel junctions
US9257136B1 (en) 2015-05-05 2016-02-09 Micron Technology, Inc. Magnetic tunnel junctions
US10141498B2 (en) 2015-12-10 2018-11-27 Everspin Technologies, Inc. Magnetoresistive stack, seed region thereof and method of manufacturing same
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
US10439133B2 (en) 2017-03-13 2019-10-08 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction having a low damping hybrid free layer
US10964468B2 (en) * 2019-07-12 2021-03-30 The Regents Of The University Of California Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching
JP2021044444A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 磁気記憶装置
US11742011B2 (en) 2021-08-11 2023-08-29 The Regents Of The University Of California Voltage-controlled gain-cell magnetic memory

Citations (5)

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JP2004146688A (ja) * 2002-10-25 2004-05-20 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、及び磁気ヘッド
JP2005085821A (ja) * 2003-09-04 2005-03-31 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2006100667A (ja) * 2004-09-30 2006-04-13 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007027197A (ja) * 2005-07-12 2007-02-01 Sony Corp 記憶素子
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ

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JP2003283000A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 磁気抵抗効果素子およびこれを有する磁気メモリ
JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
US6714444B2 (en) 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6992359B2 (en) 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US7430135B2 (en) 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
JP4514721B2 (ja) * 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP4997789B2 (ja) 2006-02-23 2012-08-08 Ｔｄｋ株式会社 磁気メモリ
JP2007305882A (ja) 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2004146688A (ja) * 2002-10-25 2004-05-20 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、及び磁気ヘッド
JP2005085821A (ja) * 2003-09-04 2005-03-31 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2006100667A (ja) * 2004-09-30 2006-04-13 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007027197A (ja) * 2005-07-12 2007-02-01 Sony Corp 記憶素子
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013016645A (ja) * 2011-07-04 2013-01-24 Toshiba Corp 磁気抵抗素子、磁気メモリ及び磁気抵抗素子の製造方法
US9312475B2 (en) 2011-07-04 2016-04-12 Kabushiki Kaisha Toshiba Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element
JP2016063088A (ja) * 2014-09-18 2016-04-25 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 磁気トンネル接合素子及び磁気ランダムアクセスメモリ
JP2018515923A (ja) * 2015-05-07 2018-06-14 マイクロン テクノロジー， インク． 磁気トンネル接合
US10374149B2 (en) 2016-05-13 2019-08-06 Micron Technology, Inc. Magnetic tunnel junctions
JP2022132288A (ja) * 2019-04-26 2022-09-08 Tdk株式会社 磁気抵抗効果素子
JP7375858B2 (ja) 2019-04-26 2023-11-08 Tdk株式会社 磁気抵抗効果素子

Also Published As

Publication number Publication date
EP3232440A2 (en) 2017-10-18
EP3232440B1 (en) 2020-05-27
US20110062538A1 (en) 2011-03-17
US8508004B2 (en) 2013-08-13
CN101861622A (zh) 2010-10-13
EP2201570A1 (en) 2010-06-30
CN101861622B (zh) 2014-06-04
WO2009049122A1 (en) 2009-04-16
EP2201570B1 (en) 2018-02-28
EP3232440A3 (en) 2017-11-29
US20090096042A1 (en) 2009-04-16
US7932571B2 (en) 2011-04-26

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