CN101861622B - 具有减小的电流密度的磁性元件 - Google Patents

具有减小的电流密度的磁性元件 Download PDF

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Publication number
CN101861622B
CN101861622B CN200880116627.6A CN200880116627A CN101861622B CN 101861622 B CN101861622 B CN 101861622B CN 200880116627 A CN200880116627 A CN 200880116627A CN 101861622 B CN101861622 B CN 101861622B
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China
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layer
free magnetic
magnetic layer
free
memory storage
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Chinese (zh)
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CN101861622A (zh
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N·里佐
P·马瑟
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Everspin Technologies Inc
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Everspin Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN200880116627.6A 2007-10-11 2008-10-10 具有减小的电流密度的磁性元件 Active CN101861622B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/870,856 US7932571B2 (en) 2007-10-11 2007-10-11 Magnetic element having reduced current density
US11/870,856 2007-10-11
PCT/US2008/079471 WO2009049122A1 (en) 2007-10-11 2008-10-10 Magnetic element having reduced current density

Publications (2)

Publication Number Publication Date
CN101861622A CN101861622A (zh) 2010-10-13
CN101861622B true CN101861622B (zh) 2014-06-04

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US (2) US7932571B2 (enExample)
EP (2) EP2201570B1 (enExample)
JP (1) JP2011501420A (enExample)
CN (1) CN101861622B (enExample)
WO (1) WO2009049122A1 (enExample)

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KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
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US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US8492859B2 (en) * 2011-02-15 2013-07-23 International Business Machines Corporation Magnetic tunnel junction with spacer layer for spin torque switched MRAM
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JP5558425B2 (ja) * 2011-07-04 2014-07-23 株式会社東芝 磁気抵抗素子、磁気メモリ及び磁気抵抗素子の製造方法
US8766383B2 (en) * 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
JP2013115400A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
US9042164B2 (en) 2012-03-26 2015-05-26 Honeywell International Inc. Anti-tampering devices and techniques for magnetoresistive random access memory
US8767432B1 (en) 2012-12-11 2014-07-01 International Business Machines Corporation Method and apparatus for controlled application of Oersted field to magnetic memory structure
US8981505B2 (en) * 2013-01-11 2015-03-17 Headway Technologies, Inc. Mg discontinuous insertion layer for improving MTJ shunt
US9240547B2 (en) 2013-09-10 2016-01-19 Micron Technology, Inc. Magnetic tunnel junctions and methods of forming magnetic tunnel junctions
US9344345B2 (en) 2014-03-19 2016-05-17 Micron Technology, Inc. Memory cells having a self-aligning polarizer
SG10201401676XA (en) 2014-04-21 2015-11-27 Micron Technology Inc Spin transfer torque memory cells
US20160087194A1 (en) * 2014-09-18 2016-03-24 Samsung Electronics Co., Ltd. Magnetic tunnel junction device and magnetoresistive random access memory
JP6553857B2 (ja) * 2014-09-18 2019-07-31 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 磁気トンネル接合素子及び磁気ランダムアクセスメモリ
US9559143B2 (en) * 2015-01-05 2017-01-31 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including free layers that are cobalt-free
US9472750B2 (en) * 2015-01-05 2016-10-18 Samsung Electronics Co., Ltd. Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
US9502642B2 (en) 2015-04-10 2016-11-22 Micron Technology, Inc. Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
US9520553B2 (en) 2015-04-15 2016-12-13 Micron Technology, Inc. Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction
US9530959B2 (en) 2015-04-15 2016-12-27 Micron Technology, Inc. Magnetic tunnel junctions
US9257136B1 (en) 2015-05-05 2016-02-09 Micron Technology, Inc. Magnetic tunnel junctions
US9960346B2 (en) * 2015-05-07 2018-05-01 Micron Technology, Inc. Magnetic tunnel junctions
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US10141498B2 (en) 2015-12-10 2018-11-27 Everspin Technologies, Inc. Magnetoresistive stack, seed region thereof and method of manufacturing same
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
US9680089B1 (en) 2016-05-13 2017-06-13 Micron Technology, Inc. Magnetic tunnel junctions
US10439133B2 (en) 2017-03-13 2019-10-08 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction having a low damping hybrid free layer
JP7096198B2 (ja) * 2019-04-26 2022-07-05 Tdk株式会社 磁気抵抗効果素子
US10964468B2 (en) * 2019-07-12 2021-03-30 The Regents Of The University Of California Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching
JP2021044444A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 磁気記憶装置
US11742011B2 (en) 2021-08-11 2023-08-29 The Regents Of The University Of California Voltage-controlled gain-cell magnetic memory

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Publication number Publication date
EP2201570B1 (en) 2018-02-28
JP2011501420A (ja) 2011-01-06
EP2201570A1 (en) 2010-06-30
US20090096042A1 (en) 2009-04-16
CN101861622A (zh) 2010-10-13
WO2009049122A1 (en) 2009-04-16
US8508004B2 (en) 2013-08-13
US20110062538A1 (en) 2011-03-17
EP3232440B1 (en) 2020-05-27
US7932571B2 (en) 2011-04-26
EP3232440A2 (en) 2017-10-18
EP3232440A3 (en) 2017-11-29

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