CN102456833B - 存储装置的制造方法、存储器件以及存储装置 - Google Patents

存储装置的制造方法、存储器件以及存储装置 Download PDF

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Publication number
CN102456833B
CN102456833B CN201110299670.4A CN201110299670A CN102456833B CN 102456833 B CN102456833 B CN 102456833B CN 201110299670 A CN201110299670 A CN 201110299670A CN 102456833 B CN102456833 B CN 102456833B
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China
Prior art keywords
material film
lower electrode
upper electrode
layer
ion source
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Expired - Fee Related
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CN201110299670.4A
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English (en)
Chinese (zh)
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CN102456833A (zh
Inventor
宫田幸児
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Sony Semiconductor Solutions Corp
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Sony Corp
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Publication of CN102456833A publication Critical patent/CN102456833A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CN201110299670.4A 2010-10-19 2011-09-30 存储装置的制造方法、存储器件以及存储装置 Expired - Fee Related CN102456833B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-234414 2010-10-19
JP2010234414A JP2012089643A (ja) 2010-10-19 2010-10-19 記憶装置の製造方法、並びに記憶素子および記憶装置

Publications (2)

Publication Number Publication Date
CN102456833A CN102456833A (zh) 2012-05-16
CN102456833B true CN102456833B (zh) 2016-04-27

Family

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CN201110299670.4A Expired - Fee Related CN102456833B (zh) 2010-10-19 2011-09-30 存储装置的制造方法、存储器件以及存储装置

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Country Link
US (1) US9118005B2 (enExample)
JP (1) JP2012089643A (enExample)
CN (1) CN102456833B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9680094B2 (en) * 2012-08-30 2017-06-13 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
CN103855300B (zh) * 2012-12-04 2017-03-29 中芯国际集成电路制造(上海)有限公司 相变存储器及其形成方法
US9252359B2 (en) * 2013-03-03 2016-02-02 Adesto Technologies Corporation Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof
US12376315B2 (en) 2022-07-18 2025-07-29 Globalfoundries U.S. Inc. Resistive memory element arrays with shared electrode strips

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740921B2 (en) * 2002-02-01 2004-05-25 Hitachi, Ltd. Semiconductor memory cell and method of forming same
CN101060129A (zh) * 2006-04-21 2007-10-24 三星电子株式会社 非易失性存储器件及其操作和制造方法
CN101499437A (zh) * 2008-01-29 2009-08-05 株式会社日立制作所 非易失性存储器件及其制造方法
US7696511B2 (en) * 2007-08-06 2010-04-13 Sony Corporation Memory element and memory device
CN101859871A (zh) * 2009-04-02 2010-10-13 索尼公司 存储元件及其制造方法和半导体存储装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830275B2 (ja) * 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
DE102005001902B4 (de) * 2005-01-14 2009-07-02 Qimonda Ag Verfahren zur Herstellung einer sublithographischen Kontaktstruktur in einer Speicherzelle
WO2008117371A1 (ja) * 2007-03-23 2008-10-02 Fujitsu Limited 抵抗記憶素子及び不揮発性半導体記憶装置
JP5175526B2 (ja) * 2007-11-22 2013-04-03 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
WO2010079816A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 半導体装置及びその製造方法
JP4810581B2 (ja) * 2009-03-25 2011-11-09 株式会社東芝 不揮発性記憶装置
JP2011054873A (ja) * 2009-09-04 2011-03-17 Sony Corp 不揮発性メモリ素子の製造方法
JP2011124511A (ja) * 2009-12-14 2011-06-23 Sony Corp 記憶素子および記憶装置
JP2011211101A (ja) * 2010-03-30 2011-10-20 Sony Corp 記憶素子及びその製造方法
JP2012084765A (ja) * 2010-10-14 2012-04-26 Sony Corp 不揮発性メモリ素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740921B2 (en) * 2002-02-01 2004-05-25 Hitachi, Ltd. Semiconductor memory cell and method of forming same
CN101060129A (zh) * 2006-04-21 2007-10-24 三星电子株式会社 非易失性存储器件及其操作和制造方法
US7696511B2 (en) * 2007-08-06 2010-04-13 Sony Corporation Memory element and memory device
CN101499437A (zh) * 2008-01-29 2009-08-05 株式会社日立制作所 非易失性存储器件及其制造方法
CN101859871A (zh) * 2009-04-02 2010-10-13 索尼公司 存储元件及其制造方法和半导体存储装置

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Publication number Publication date
CN102456833A (zh) 2012-05-16
US20120091428A1 (en) 2012-04-19
US9118005B2 (en) 2015-08-25
JP2012089643A (ja) 2012-05-10

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Effective date of registration: 20170113

Address after: Kanagawa Japan Atsugi Asahi 4-14-1

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Patentee before: Sony Corporation

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Granted publication date: 20160427

Termination date: 20200930

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