JP2012054344A - ピックアップ方法及びピックアップ装置 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 106
- 239000000853 adhesive Substances 0.000 claims abstract description 133
- 230000001070 adhesive effect Effects 0.000 claims abstract description 133
- 239000012530 fluid Substances 0.000 claims abstract description 43
- 238000002347 injection Methods 0.000 claims abstract description 25
- 239000007924 injection Substances 0.000 claims abstract description 25
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 74
- 238000001179 sorption measurement Methods 0.000 claims 2
- 230000006378 damage Effects 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 52
- 230000007246 mechanism Effects 0.000 description 51
- 238000012986 modification Methods 0.000 description 26
- 230000004048 modification Effects 0.000 description 26
- 230000002093 peripheral effect Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
- Y10T156/1132—Using vacuum directly against work during delaminating
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
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Abstract
【解決手段】粘着シートに貼り付けられているチップに第1の吸着部を近づけて接触させるとともに、粘着シートに接触する接触面に凹部が形成されている第2の吸着部を粘着シートに近づけ、第1の吸着部と対向するように粘着シートに第2の吸着部を接触させる第1のステップS11〜S13と、粘着シートに接触している第2の吸着部により粘着シートを吸引するとともに、粘着シートとチップとの間に注入部により流体を注入することによって、チップの凹部に対向する部分から粘着シートを剥離する第2のステップS14〜S17と、第1の吸着部によりチップを吸着している状態で、粘着シートから第1の吸着部を遠ざけることによって、チップをピックアップする第3のステップS18とを有する。
【選択図】図2
Description
(実施の形態)
最初に、図1から図8を参照し、本発明の実施の形態に係るピックアップ装置及びピックアップ方法について説明する。
F=S×σmax (1)
で表される。
T=FD−FU (2)
となる。そして、せん断面SFの面積の合計をAとすると、このせん断力Tがせん断面SFに作用するせん断応力τは、
τ=T/A=(FD−FU)/A (3)
で表される。そして、チップ23のせん断破壊強度をτmaxとすると、チップ23がせん断破壊しない条件は、せん断応力τとせん断破壊強度τmaxとが
τ<τmax (4)
を満たすときである。
すると、図7に示すように、
A=L2×d×4 (5)
となり、また、式(1)より
FD−FU≒FD=(L12−L22)×σmax (6)
となる。そして、式(3)、式(5)及び式(6)より、
τ=(L12−L22)×σmax/(L2×d×4) (7)
となる。
σmax=0.05N/mm2 (8)
とする。また、せん断破壊強度をτmaxについては、"Investigating the Influence of Fabrication Process and Crystal Orientation on Shear Strength of Silicon Microcomponents", Q. Chen, D.-J. Yao, C.-J. Kim, and G. P. Carman, Journal of Materials Science, Vol. 35, No. 21, Nov. 2000, pp. 5465-5474.の記載に基づいて、
τmax=5MPa
とする。また、チップ23の平面寸法L1及び厚さdについては、
L1=10mm (9)
d=0.02mm (10)
とする。
(実施の形態の変形例)
次に、図9から図11Eを参照し、本発明の実施の形態の変形例に係るピックアップ装置及びピックアップ方法について説明する。
30 上コレット
32 上コレット駆動機構
40 下コレット
42 下コレット駆動機構
44 ニードル
Claims (10)
- 粘着シートに貼り付けられているチップに第1の吸着部を近づけて接触させるとともに、前記粘着シートに接触する接触面に凹部が形成されている第2の吸着部を前記粘着シートに近づけ、前記第1の吸着部と対向するように前記粘着シートに前記第2の吸着部を接触させる第1のステップと、
前記粘着シートに接触している前記第2の吸着部により前記粘着シートを吸引するとともに、前記粘着シートと前記チップとの間に注入部により流体を注入することによって、前記チップの前記凹部に対向する部分から前記粘着シートを剥離する第2のステップと、
前記第1の吸着部により前記チップを吸着している状態で、前記第2の吸着部が吸引している前記粘着シートから前記第1の吸着部を遠ざけることによって、前記チップを前記粘着シートから剥離してピックアップする第3のステップと
を有する、ピックアップ方法。 - 前記第2の吸着部は、前記凹部の開口寸法が、前記粘着シートから前記第1の吸着部を遠ざける際に前記チップに作用するせん断応力が、前記チップのせん断強度と等しくなるような所定値よりも大きく、かつ、前記チップの平面寸法よりも小さいものである、請求項1に記載のピックアップ方法。
- 前記第2のステップは、前記粘着シートを吸引するとともに、振動部により前記粘着シートを振動させることによって、前記チップの前記凹部に対向する部分からの前記粘着シートの剥離を開始し、剥離を開始した前記粘着シートと前記チップとの間に前記注入部を挿入し、挿入した前記注入部により流体を注入することによって、前記チップの前記凹部に対向する部分から前記粘着シートを剥離するものである、請求項1又は請求項2に記載のピックアップ方法。
- 前記第2の吸着部は、前記凹部の底面に、前記粘着シートを吸引する吸引孔と連通する開口が形成されたものであり、
前記注入部は、前記吸引孔を通って、前記注入部の先端が前記開口から突出自在に設けられたものである、請求項1から請求項3のいずれかに記載のピックアップ方法。 - 前記注入部は、前記注入部の先端が前記凹部の底面から突出した状態で、前記第2の吸着部と一体で設けられたものである、請求項1から請求項3のいずれかに記載のピックアップ方法。
- チップを吸着する第1の吸着部と、
前記第1の吸着部を移動駆動する第1の駆動部と、
粘着シートに接触する接触面に凹部が形成されており、前記粘着シートを吸引する第2の吸着部と、
前記第2の吸着部を移動駆動する第2の駆動部と、
流体を注入する注入部と、
前記第1の駆動部により、粘着シートに貼り付けられているチップに前記第1の吸着部を近づけて接触させるとともに、前記第2の駆動部により、前記第2の吸着部を前記粘着シートに近づけ、前記第1の吸着部と対向するように前記粘着シートに前記第2の吸着部を接触させ、
前記粘着シートに接触している前記第2の吸着部により前記粘着シートを吸引するとともに、前記粘着シートと前記チップとの間に前記注入部により流体を注入することによって、前記チップの前記凹部に対向する部分から前記粘着シートを剥離し、
前記第1の吸着部により前記チップを吸着している状態で、前記第2の吸着部が吸引している前記粘着シートから前記第1の吸着部を前記第1の駆動部により遠ざけることによって、前記チップを前記粘着シートから剥離してピックアップする、制御部と
を有する、ピックアップ装置。 - 前記第2の吸着部は、前記凹部の開口寸法が、前記粘着シートから前記第1の吸着部を前記第1の駆動部により遠ざける際に前記チップに作用するせん断応力が、前記チップのせん断強度と等しくなるような所定値よりも大きく、かつ、前記チップの平面寸法よりも小さいものである、請求項6に記載のピックアップ装置。
- 前記粘着シートを振動させる振動部を有し、
前記制御部は、前記粘着シートを吸引するとともに、前記振動部により前記粘着シートを振動させることによって、前記チップの前記凹部に対向する部分からの前記粘着シートの剥離を開始し、剥離を開始した前記粘着シートと前記チップとの間に前記注入部を挿入し、挿入した前記注入部により流体を注入することによって、前記チップの前記凹部に対向する部分から前記粘着シートを剥離するものである、請求項6又は請求項7に記載のピックアップ装置。 - 前記第2の吸着部は、前記凹部の底面に、前記粘着シートを吸引する吸引孔と連通する開口が形成されたものであり、
前記注入部は、前記吸引孔を通って、前記注入部の先端が前記開口から突出自在に設けられたものである、請求項6から請求項8のいずれかに記載のピックアップ装置。 - 前記注入部は、前記注入部の先端が前記凹部の底面から突出した状態で、前記第2の吸着部と一体で設けられたものである、請求項6から請求項8のいずれかに記載のピックアップ装置。
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CN201180041531.XA CN103081083B (zh) | 2010-08-31 | 2011-06-30 | 拾取方法和拾取装置 |
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