JP2012017997A - 多結晶シリコン棒および多結晶シリコン棒の製造方法 - Google Patents
多結晶シリコン棒および多結晶シリコン棒の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M7/00—Vibration-testing of structures; Shock-testing of structures
- G01M7/08—Shock-testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/045—Analysing solids by imparting shocks to the workpiece and detecting the vibrations or the acoustic waves caused by the shocks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/12—Analysing solids by measuring frequency or resonance of acoustic waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
- G01N29/4409—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by comparison
- G01N29/4418—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by comparison with a model, e.g. best-fit, regression analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
- G01N29/4454—Signal recognition, e.g. specific values or portions, signal events, signatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
- G01N29/46—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by spectral analysis, e.g. Fourier analysis or wavelet analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
- G01N2291/0234—Metals, e.g. steel
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/26—Scanned objects
- G01N2291/262—Linear objects
- G01N2291/2626—Wires, bars, rods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/26—Scanned objects
- G01N2291/269—Various geometry objects
- G01N2291/2697—Wafer or (micro)electronic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】多結晶シリコン棒(100)の長さを巻尺で測定し、次に、ハンマー(120)で多結晶シリコン棒(100)の打撃を行い、この打撃音をマイク(130)を介して録音器(140)に収録する。そして、打撃音の音響信号を高速フーリエ変換して周波数分布を表示させる。さらに、高速フーリエ変換後の周波数分布の中で、最も大きな音量を示すピーク周波数fを検出する。多結晶シリコン棒の長さ(L)とピーク周波数fの関係を求め、ピーク周波数fがf≧1471/Lの領域(A領域)に属するか否かで、多結晶シリコン棒の硬さを判断する。
【選択図】図5
Description
2 金属電極
3 ガスノズル
4 排気口
5 シリコン芯線
5a 鉛直方向部分
5b ブリッジ部
10 反応容器
20 芯線ホルダ
30 炭素電極
31 上部電極
32 下部電極
50 多結晶シリコンの製造装置
100 多結晶シリコン棒
110 ころ
120 ハンマー
130 マイク
140 録音器
Claims (8)
- 長さがL(m)の多結晶シリコン棒であって、該多結晶シリコン棒の打撃音は、周波数分析して得られるピーク周波数f(Hz)が、f≧1471/Lを満足することを特徴とする多結晶シリコン棒。
- 前記ピーク周波数fは、f≦1471/L+1000を満足することを特徴とする請求項1に記載の多結晶シリコン棒。
- 前記多結晶シリコン棒の打撃音の波形から求めた固有周波数f0と前記ピーク周波数fとの比R(f0/f)が0.9≦R≦1.1であることを特徴とする請求項1又は2に記載の多結晶シリコン棒。
- 前記多結晶シリコン棒はシーメンス法による気相成長で得られたものである請求項1乃至3の何れか1項に記載の多結晶シリコン棒。
- 気相法により多結晶シリコンを成長させ、該多結晶シリコンを長さがL(m)の多結晶シリコン棒とし、該多結晶シリコン棒を打撃して得られた打撃音の周波数分析を行い、該打撃音のピーク周波数f(Hz)を求め、f≧1471/Lを満足する多結晶シリコン棒を選別することを特徴とする多結晶シリコン棒の製造方法。
- 前記多結晶シリコン棒の選別基準として、前記ピーク周波数fの上限値を、f≦1471/L+1000とすることを特徴とする請求項5に記載の多結晶シリコン棒の製造方法。
- 前記選別される多結晶シリコン棒は、打撃音の波形から求めた固有周波数f0と前記ピーク周波数fとの比R(f0/f)が0.9≦R≦1.1であることを特徴とする請求項5又は6に記載の多結晶シリコン棒の製造方法。
- 前記気相法はシーメンス法である請求項5乃至7の何れか1項に記載の多結晶シリコン棒の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010153828A JP5238762B2 (ja) | 2010-07-06 | 2010-07-06 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
PCT/JP2011/003800 WO2012004968A1 (ja) | 2010-07-06 | 2011-07-04 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
EP11803307.5A EP2594933A4 (en) | 2010-07-06 | 2011-07-04 | Polycrystalline silicon rod and production method for polycrystalline silicon rod |
AU2011275287A AU2011275287B2 (en) | 2010-07-06 | 2011-07-04 | Polycrystalline silicon rod and production method for polycrystalline silicon rod |
US13/808,404 US9006002B2 (en) | 2010-07-06 | 2011-07-04 | Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rod |
CN201180033481.0A CN102971624B (zh) | 2010-07-06 | 2011-07-04 | 多晶硅棒以及多晶硅棒的制造方法 |
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JP2010153828A JP5238762B2 (ja) | 2010-07-06 | 2010-07-06 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2012017997A true JP2012017997A (ja) | 2012-01-26 |
JP2012017997A5 JP2012017997A5 (ja) | 2012-03-08 |
JP5238762B2 JP5238762B2 (ja) | 2013-07-17 |
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JP2010153828A Active JP5238762B2 (ja) | 2010-07-06 | 2010-07-06 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
Country Status (6)
Country | Link |
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US (1) | US9006002B2 (ja) |
EP (1) | EP2594933A4 (ja) |
JP (1) | JP5238762B2 (ja) |
CN (1) | CN102971624B (ja) |
AU (1) | AU2011275287B2 (ja) |
WO (1) | WO2012004968A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104220867A (zh) * | 2012-04-04 | 2014-12-17 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法及单晶硅的制造方法 |
CN104395740A (zh) * | 2012-06-18 | 2015-03-04 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法、多晶硅棒、多晶硅块以及单晶硅的制造方法 |
Families Citing this family (7)
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JP5868286B2 (ja) * | 2012-08-10 | 2016-02-24 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法 |
DE102013207251A1 (de) | 2013-04-22 | 2014-10-23 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
JP6181620B2 (ja) | 2014-09-04 | 2017-08-16 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
CN108168868A (zh) * | 2017-12-29 | 2018-06-15 | 绍兴文理学院 | 一种检测型钢构件自振频率的方法 |
CN108225955B (zh) * | 2017-12-30 | 2024-01-12 | 洛阳阿特斯光伏科技有限公司 | 一种硅棒的硬度评估方法 |
CN108732307A (zh) * | 2018-05-04 | 2018-11-02 | 扬州连城金晖金刚线切片研发有限公司 | 一种金刚线切片的单、多晶硅棒检验方法 |
CN112105584A (zh) | 2018-12-17 | 2020-12-18 | 瓦克化学股份公司 | 用于制备多晶硅的方法 |
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JP2001294416A (ja) * | 2000-04-07 | 2001-10-23 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの製造装置 |
JP2004149324A (ja) * | 2002-10-28 | 2004-05-27 | Sumitomo Mitsubishi Silicon Corp | 多結晶シリコンロッド及びその製造方法、並びにそのロッドの製造に使用されるシリコン芯材 |
JP2008058314A (ja) * | 2006-08-30 | 2008-03-13 | Wacker Chemie Ag | ポリシリコン成形体の汚染および破壊のない試験法および欠陥のないポリシリコン成形体 |
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US4062229A (en) * | 1977-02-22 | 1977-12-13 | General Electric Company | Method of testing the integrity of installed rock bolts |
JP2001021543A (ja) | 1999-07-06 | 2001-01-26 | Sumitomo Sitix Of Amagasaki Inc | シリコン塊の探傷方法 |
JP2001235451A (ja) * | 2000-02-25 | 2001-08-31 | Mitsubishi Electric Corp | 試料の欠陥測定装置及び方法 |
JP4768927B2 (ja) | 2001-05-11 | 2011-09-07 | 新日本製鐵株式会社 | 打音検査物の非破壊検査方法、及び品質管理方法 |
US6941811B2 (en) * | 2003-08-04 | 2005-09-13 | Nan Ya Technology Corporation | Method and apparatus for detecting wafer flaw |
JP4575886B2 (ja) | 2006-02-14 | 2010-11-04 | シャープ株式会社 | 多結晶半導体ウエハの割れ検査装置および割れ検査方法 |
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2010
- 2010-07-06 JP JP2010153828A patent/JP5238762B2/ja active Active
-
2011
- 2011-07-04 EP EP11803307.5A patent/EP2594933A4/en not_active Withdrawn
- 2011-07-04 AU AU2011275287A patent/AU2011275287B2/en not_active Ceased
- 2011-07-04 CN CN201180033481.0A patent/CN102971624B/zh active Active
- 2011-07-04 US US13/808,404 patent/US9006002B2/en not_active Expired - Fee Related
- 2011-07-04 WO PCT/JP2011/003800 patent/WO2012004968A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001294416A (ja) * | 2000-04-07 | 2001-10-23 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの製造装置 |
JP2004149324A (ja) * | 2002-10-28 | 2004-05-27 | Sumitomo Mitsubishi Silicon Corp | 多結晶シリコンロッド及びその製造方法、並びにそのロッドの製造に使用されるシリコン芯材 |
JP2008058314A (ja) * | 2006-08-30 | 2008-03-13 | Wacker Chemie Ag | ポリシリコン成形体の汚染および破壊のない試験法および欠陥のないポリシリコン成形体 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104220867A (zh) * | 2012-04-04 | 2014-12-17 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法及单晶硅的制造方法 |
US9328429B2 (en) | 2012-04-04 | 2016-05-03 | Shin-Etsu Chemical Co., Ltd. | Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single crystal silicon |
CN104395740A (zh) * | 2012-06-18 | 2015-03-04 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法、多晶硅棒、多晶硅块以及单晶硅的制造方法 |
US9274069B2 (en) | 2012-06-18 | 2016-03-01 | Shin-Etsu Chemical Co., Ltd. | Method for evaluating degree of crystalline orientation of polycrystalline silicon, method for selecting polycrystalline silicon rod, polycrystalline silicon rod, polycrystalline silicon ingot, and method for manufacturing monocrystalline silicon |
Also Published As
Publication number | Publication date |
---|---|
AU2011275287A1 (en) | 2013-01-24 |
CN102971624A (zh) | 2013-03-13 |
US20130102092A1 (en) | 2013-04-25 |
AU2011275287B2 (en) | 2013-10-03 |
WO2012004968A1 (ja) | 2012-01-12 |
JP5238762B2 (ja) | 2013-07-17 |
CN102971624B (zh) | 2015-04-01 |
US9006002B2 (en) | 2015-04-14 |
EP2594933A4 (en) | 2017-05-17 |
EP2594933A1 (en) | 2013-05-22 |
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