JP2012015470A - 撮像装置および撮像装置の製造方法 - Google Patents
撮像装置および撮像装置の製造方法 Download PDFInfo
- Publication number
- JP2012015470A JP2012015470A JP2010153462A JP2010153462A JP2012015470A JP 2012015470 A JP2012015470 A JP 2012015470A JP 2010153462 A JP2010153462 A JP 2010153462A JP 2010153462 A JP2010153462 A JP 2010153462A JP 2012015470 A JP2012015470 A JP 2012015470A
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- imaging
- electrode pad
- groove
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 238000005530 etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】実施の形態の撮像装置1は、シリコン基板11の第1の主面11Aに形成された撮像素子13と、第1の主面11Aに形成された電極パッド14と、撮像素子13と電極パッド14とを接続する表面配線12と、シリコン基板11の第2の主面11Bに形成された外部接続端子20と、第2の主面11B側からシリコン基板11を貫通し電極パッド14の裏面に達する基板貫通孔18を介して電極パッド14と外部接続端子20とを接続する裏面配線19と、撮像素子13を囲む溝部21と溝部21に囲まれた領域とを覆う第2の主面11Bに形成された遮光層22と、を具備する。
【選択図】図4
Description
溝部21の断面形状は、貫通孔18と同様に第1の主面11A側の開口が第2の主面11B側の開口よりも小さいテーパー形状が好ましい。内部に遮光層22を形成しやすいためである。
例えば、0.5μmのアルミニウム膜の赤外光透過率は0.1%であるために、遮光層22の厚さは0.2〜5μmが好ましい。
撮像素子13が形成された第1の主面11Aと、第1の主面11Aと対向する第2の主面11Bと、を有する平板の単結晶シリコンからなるシリコン基板11が準備される。
接着層15を介して、素子基板1Aの第1の主面11Aに、撮像素子13等を保護するガラス基板16が接合される。すなわち、ガラス基板16は、エポキシ樹脂等からなる接着層15を介して第1の主面11Aを覆うようにシリコン基板11に貼り合わされる。透明基板および接着層15は、撮像素子13が撮像する光の波長領域において90%以上の透過率を有することが望ましい。
ガラス基板16は、貫通孔/溝部形成ステップにおいて素子基板1Aの保持部材として機能するとともに、製造ステップにおいても撮像素子13等を保護する機能も有している。
なお、撮像素子13の受光領域上には接着層15を形成しないで、ガラス基板16と受光領域との間を空気層としてもよい。
次に、図5(C)に示すように、第2の主面11Bの、それぞれの電極パッド14と対向する位置に開口18Cを、撮像素子13を囲む位置に額縁状の開口21C、を有するエッチマスク層17が形成される。エッチマスク層17は、例えばシリコン酸化膜のようなハードマスク、またはフォトレジストのようなソフトマスクである。
第2の主面11B側から、貫通孔18、溝部21、および第2の主面11Bに酸化シリコン等の絶縁層(不図示)が、形成される。貫通孔18の底面18Bの電極パッド14が露出するように絶縁層を部分的に除去した後に、裏面配線19と、遮光層22と、が同時に形成される。すなわち、第2の主面11Bにスパッタ法または蒸着法により、アルミニウムもしくは銅等の導電膜が成膜される。そして、フォトレジストでカバーされた裏面配線19および遮光層22以外の導電膜が除去される。
Claims (9)
- 第1の主面と第2の主面とを有する半導体基板と、
撮像部および周辺回路部を有する、前記第1の主面に形成された撮像素子と、
前記第1の主面に形成された電極パッドと、
前記撮像素子と前記電極パッドとを接続する、前記第1の主面に形成された表面配線と、
前記第2の主面に形成された外部接続端子と、
前記第2の主面から前記半導体基板を貫通し前記電極パッド裏面に達する基板貫通孔を介して、前記電極パッドと前記外部接続端子とを接続する、前記第2の主面に形成された裏面配線と、
前記撮像素子を囲むように前記第2の主面に形成された溝部と、前記溝部に囲まれた前記第2の主面の領域と、を覆う、前記第2の主面に形成された遮光層と、を具備することを特徴とする撮像装置。 - 前記溝部の深さが、前記半導体基板の厚さの50〜100%であることを特徴とする請求項1に記載の撮像装置。
- 前記溝部の底部と前記第1の主面との間が、10μm以下であることを特徴とする請求項2に記載の撮像装置。
- 前記遮光層と前記裏面配線とは、同一材料からなることを特徴とする請求項3に記載の撮像装置。
- 前記遮光層と前記裏面配線とは、同時に形成されることを特徴とする請求項4に記載の撮像装置。
- 前記基板貫通孔と前記溝部とは、同時に形成されること、を特徴とする請求項5に記載の撮像装置。
- 第1の主面と第2の主面とを有する半導体基板と、撮像部および周辺回路部を有する第1の主面に形成された撮像素子と、前記第1の主面に形成された電極パッドと、前記撮像素子と前記電極パッドとを接続する前記第1の主面に形成された表面配線と、を具備する素子基板を準備する準備ステップと、
第2の主面側から前記半導体基板をエッチングし、前記電極パッドと対向する位置に前記半導体基板を貫通する基板貫通孔と、前記撮像素子を囲む位置に溝部と、を同時に形成する貫通孔/溝部形成ステップと、
前記基板貫通孔を介して、前記電極パッドの裏面から前記第2の主面に至る裏面配線と、前記溝部と前記溝部に囲まれた領域とを覆う遮光層と、を前記第2の主面に、同時に形成する裏面配線/遮光層形成ステップと、
前記裏面配線上に外部接続端子を形成する外部接続端子形成ステップと、
を具備することを特徴とする撮像装置の製造方法。 - 前記溝部の深さが、前記半導体基板の厚さの50〜100%であることを特徴とする請求項7に記載の撮像装置の製造方法。
- 前記溝部の底部と前記第1の主面との間が、10μm以下であることを特徴とする請求項8に記載の撮像装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010153462A JP5450295B2 (ja) | 2010-07-05 | 2010-07-05 | 撮像装置および撮像装置の製造方法 |
PCT/JP2011/063104 WO2012005075A1 (ja) | 2010-07-05 | 2011-06-08 | 撮像装置および撮像装置の製造方法 |
EP11803411.5A EP2592654A4 (en) | 2010-07-05 | 2011-06-08 | IMAGING DEVICE AND METHOD FOR MANUFACTURING IMAGING DEVICE |
US13/734,086 US9537023B2 (en) | 2010-07-05 | 2013-01-04 | Image pickup apparatus and image pickup apparatus manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010153462A JP5450295B2 (ja) | 2010-07-05 | 2010-07-05 | 撮像装置および撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012015470A true JP2012015470A (ja) | 2012-01-19 |
JP5450295B2 JP5450295B2 (ja) | 2014-03-26 |
Family
ID=45441061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010153462A Active JP5450295B2 (ja) | 2010-07-05 | 2010-07-05 | 撮像装置および撮像装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9537023B2 (ja) |
EP (1) | EP2592654A4 (ja) |
JP (1) | JP5450295B2 (ja) |
WO (1) | WO2012005075A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014067743A (ja) * | 2012-09-24 | 2014-04-17 | Olympus Corp | 撮像装置、該撮像装置を備える内視鏡 |
US8836065B2 (en) | 2013-01-08 | 2014-09-16 | Kabushiki Kaisha Toshiba | Solid-state imaging device |
JP2017038040A (ja) * | 2015-08-10 | 2017-02-16 | 大日本印刷株式会社 | イメージセンサモジュール |
WO2018155195A1 (ja) * | 2017-02-22 | 2018-08-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置、電子機器、及び、撮像装置の製造方法 |
JP2018535549A (ja) * | 2015-10-28 | 2018-11-29 | 蘇州晶方半導体科技股▲分▼有限公司China Wafer Level Csp Co., Ltd. | 画像検知チップ実装構造および実装方法 |
US10263128B2 (en) | 2017-09-05 | 2019-04-16 | Kabushiki Kaisha Toshiba | Photodetector converting ultraviolet light into visible light |
JP2020054640A (ja) * | 2018-10-02 | 2020-04-09 | パナソニックi−PROセンシングソリューションズ株式会社 | 内視鏡 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013143520A (ja) * | 2012-01-12 | 2013-07-22 | Sony Corp | 撮像装置および撮像装置の製造方法 |
JP2015115522A (ja) * | 2013-12-13 | 2015-06-22 | ソニー株式会社 | 固体撮像装置および製造方法、並びに電子機器 |
JP2015185754A (ja) * | 2014-03-25 | 2015-10-22 | 株式会社東芝 | 半導体装置 |
JP2018148183A (ja) | 2017-03-09 | 2018-09-20 | 株式会社東芝 | 光検出器および放射線検出器 |
US10879415B2 (en) | 2017-06-23 | 2020-12-29 | Kabushiki Kaisha Toshiba | Photodetector, photodetection system, lidar apparatus, vehicle, and method of manufacturing photodetector |
US20190058081A1 (en) * | 2017-08-18 | 2019-02-21 | Khaled Ahmed | Micro light-emitting diode (led) display and assembly apparatus |
JP6862386B2 (ja) | 2018-03-22 | 2021-04-21 | 株式会社東芝 | 光検出器、ライダー装置、及び光検出器の製造方法 |
CN113132570B (zh) * | 2019-12-31 | 2023-03-10 | 中芯集成电路(宁波)有限公司 | 成像模组、电子设备 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001128072A (ja) | 1999-10-29 | 2001-05-11 | Sony Corp | 撮像素子、撮像装置、カメラモジュール及びカメラシステム |
US7375757B1 (en) | 1999-09-03 | 2008-05-20 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
JP3887162B2 (ja) * | 2000-10-19 | 2007-02-28 | 富士通株式会社 | 撮像用半導体装置 |
JP4483896B2 (ja) * | 2007-05-16 | 2010-06-16 | ソニー株式会社 | 半導体装置及びその製造方法 |
JP2009099591A (ja) | 2007-10-12 | 2009-05-07 | Toshiba Corp | 固体撮像素子及びその製造方法 |
JP5344336B2 (ja) * | 2008-02-27 | 2013-11-20 | 株式会社ザイキューブ | 半導体装置 |
US8278152B2 (en) * | 2008-09-08 | 2012-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding process for CMOS image sensor |
JP5371381B2 (ja) * | 2008-11-05 | 2013-12-18 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
JP2010153462A (ja) | 2008-12-24 | 2010-07-08 | Nec Tokin Corp | 電磁干渉抑制体 |
US8274101B2 (en) * | 2009-10-20 | 2012-09-25 | Omnivision Technologies, Inc. | CMOS image sensor with heat management structures |
JP2013520808A (ja) * | 2010-02-26 | 2013-06-06 | 精材科技股▲ふん▼有限公司 | チップパッケージおよびその製造方法 |
JP2012033583A (ja) * | 2010-07-29 | 2012-02-16 | Sony Corp | 固体撮像素子及びその製造方法、並びに撮像装置 |
KR20130011419A (ko) * | 2011-07-21 | 2013-01-30 | 삼성전자주식회사 | 후면 조명 구조의 이미지 센서의 제조 방법 |
US20130200396A1 (en) * | 2012-02-06 | 2013-08-08 | Omnivision Technologies, Inc. | Prevention of light leakage in backside illuminated imaging sensors |
US8772898B2 (en) * | 2012-02-09 | 2014-07-08 | Omnivision Technologies, Inc. | Lateral light shield in backside illuminated imaging sensors |
-
2010
- 2010-07-05 JP JP2010153462A patent/JP5450295B2/ja active Active
-
2011
- 2011-06-08 EP EP11803411.5A patent/EP2592654A4/en not_active Withdrawn
- 2011-06-08 WO PCT/JP2011/063104 patent/WO2012005075A1/ja active Application Filing
-
2013
- 2013-01-04 US US13/734,086 patent/US9537023B2/en active Active
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9820637B2 (en) | 2012-09-24 | 2017-11-21 | Olympus Corporation | Image pickup apparatus and endoscope including image pickup apparatus |
JP2014067743A (ja) * | 2012-09-24 | 2014-04-17 | Olympus Corp | 撮像装置、該撮像装置を備える内視鏡 |
US8836065B2 (en) | 2013-01-08 | 2014-09-16 | Kabushiki Kaisha Toshiba | Solid-state imaging device |
US10681256B2 (en) | 2015-08-10 | 2020-06-09 | Dai Nippon Printing Co., Ltd. | Image sensor module including a light-transmissive interposer substrate having a through-hole |
JP2017204891A (ja) * | 2015-08-10 | 2017-11-16 | 大日本印刷株式会社 | イメージセンサモジュール |
JP2017038040A (ja) * | 2015-08-10 | 2017-02-16 | 大日本印刷株式会社 | イメージセンサモジュール |
US11153471B2 (en) | 2015-08-10 | 2021-10-19 | Dai Nippon Printing Co., Ltd. | Through-hole electrode substrate |
JP2018535549A (ja) * | 2015-10-28 | 2018-11-29 | 蘇州晶方半導体科技股▲分▼有限公司China Wafer Level Csp Co., Ltd. | 画像検知チップ実装構造および実装方法 |
WO2018155195A1 (ja) * | 2017-02-22 | 2018-08-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置、電子機器、及び、撮像装置の製造方法 |
US11322538B2 (en) | 2017-02-22 | 2022-05-03 | Sony Semiconductor Solutions Corporation | Imaging device, electronic apparatus, and method of manufacturing imaging device |
US11769784B2 (en) | 2017-02-22 | 2023-09-26 | Sony Semiconductor Solutions Corporation | Imaging device, electronic apparatus, and method of manufacturing imaging device |
US10263128B2 (en) | 2017-09-05 | 2019-04-16 | Kabushiki Kaisha Toshiba | Photodetector converting ultraviolet light into visible light |
JP2020054640A (ja) * | 2018-10-02 | 2020-04-09 | パナソニックi−PROセンシングソリューションズ株式会社 | 内視鏡 |
JP7376057B2 (ja) | 2018-10-02 | 2023-11-08 | i-PRO株式会社 | 内視鏡 |
Also Published As
Publication number | Publication date |
---|---|
US20130119501A1 (en) | 2013-05-16 |
WO2012005075A1 (ja) | 2012-01-12 |
US9537023B2 (en) | 2017-01-03 |
EP2592654A1 (en) | 2013-05-15 |
JP5450295B2 (ja) | 2014-03-26 |
EP2592654A4 (en) | 2014-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5450295B2 (ja) | 撮像装置および撮像装置の製造方法 | |
US9196650B2 (en) | Method of forming a low profile image sensor package | |
US9520322B2 (en) | Semiconductor device and method for manufacturing same | |
US7893514B2 (en) | Image sensor package, method of manufacturing the same, and image sensor module including the image sensor package | |
TWI573253B (zh) | 具暴露感測器陣列之感測器封裝體及其製作方法 | |
US9634053B2 (en) | Image sensor chip sidewall interconnection | |
KR101420934B1 (ko) | Cmos 이미지 센서를 위한 와이어 본드 인터포저 패키지 및 그 제조 방법 | |
TWI533444B (zh) | 無蓋式感測器模組及其製造方法 | |
KR101791765B1 (ko) | 방사선 검출용 반도체 장치 및 방사선 검출용 반도체 장치를 생산하는 방법 | |
JP4660259B2 (ja) | 半導体装置の製造方法 | |
JP2008079321A (ja) | イメージ・センサ用cobパッケージ構造 | |
JP5178569B2 (ja) | 固体撮像装置 | |
JP2007282137A (ja) | 光学装置用モジュール及び光学装置用モジュールの製造方法 | |
TW201515461A (zh) | 整合式相機模組及其製造方法 | |
KR100867508B1 (ko) | 이미지 센서의 웨이퍼 레벨 패키징 방법 | |
JP2010251558A (ja) | 固体撮像装置 | |
JP2011146486A (ja) | 光学デバイスおよびその製造方法ならびに電子機器 | |
JP2010186870A (ja) | 半導体装置 | |
JP2008294405A (ja) | 半導体装置及びその製造方法 | |
TWI525805B (zh) | 低輪廓影像感測器 | |
US8890322B2 (en) | Semiconductor apparatus and method of manufacturing semiconductor apparatus | |
JP2009016623A (ja) | 半導体パッケージ | |
WO2020003796A1 (ja) | 固体撮像装置、電子機器、および固体撮像装置の製造方法 | |
TW201436187A (zh) | 低輪廓感測器模組及其製造方法 | |
JP2017188512A (ja) | 電子デバイス、その製造方法及びカメラ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130628 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131225 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5450295 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |