JP2011530145A5 - - Google Patents

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Publication number
JP2011530145A5
JP2011530145A5 JP2011521340A JP2011521340A JP2011530145A5 JP 2011530145 A5 JP2011530145 A5 JP 2011530145A5 JP 2011521340 A JP2011521340 A JP 2011521340A JP 2011521340 A JP2011521340 A JP 2011521340A JP 2011530145 A5 JP2011530145 A5 JP 2011530145A5
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JP
Japan
Prior art keywords
detector
electron microscope
direct impact
microscope signal
sample
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JP2011521340A
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English (en)
Japanese (ja)
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JP2011530145A (ja
JP5350478B2 (ja
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Priority claimed from US12/184,995 external-priority patent/US7952073B2/en
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Publication of JP2011530145A5 publication Critical patent/JP2011530145A5/ja
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Publication of JP5350478B2 publication Critical patent/JP5350478B2/ja
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JP2011521340A 2008-08-01 2009-07-30 電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置 Active JP5350478B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/184,995 US7952073B2 (en) 2008-08-01 2008-08-01 Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy
US12/184,995 2008-08-01
PCT/US2009/052309 WO2010014850A2 (en) 2008-08-01 2009-07-30 Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy

Publications (3)

Publication Number Publication Date
JP2011530145A JP2011530145A (ja) 2011-12-15
JP2011530145A5 true JP2011530145A5 (enExample) 2012-02-02
JP5350478B2 JP5350478B2 (ja) 2013-11-27

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ID=41165553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011521340A Active JP5350478B2 (ja) 2008-08-01 2009-07-30 電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置

Country Status (4)

Country Link
US (1) US7952073B2 (enExample)
EP (2) EP2426694B1 (enExample)
JP (1) JP5350478B2 (enExample)
WO (1) WO2010014850A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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WO2010151810A1 (en) * 2009-06-26 2010-12-29 Gatan, Inc. Method for discrimination of backscattered from incoming electrons in imaging electron detectors with a thin electron-sensitive layer
JP5065516B2 (ja) * 2010-08-04 2012-11-07 エフ イー アイ カンパニ 薄い電子検出器における後方散乱の減少
EP2509097A1 (en) * 2011-04-07 2012-10-10 FEI Company Method of protecting a radiation detector in a charged particle instrument
WO2013013134A2 (en) 2011-07-21 2013-01-24 The Trustees Of Columbia University In The City Of New York Method of collecting and processing electron diffraction data
WO2014134400A1 (en) * 2013-02-28 2014-09-04 Direct Electron, Lp Method of electron beam imaging of a specimen by combining images of an image sequence
JP6546933B2 (ja) * 2014-04-17 2019-07-17 ガタン インコーポレイテッドGatan,Inc. ハイブリッドエネルギー変換器
CN105376723B (zh) * 2014-08-21 2019-06-14 中兴通讯股份有限公司 一种实现无线链路处理的方法、基站及终端
JP6914978B2 (ja) * 2019-02-26 2021-08-04 日本電子株式会社 試料交換装置及び荷電粒子線装置
NL2022756B1 (en) * 2019-03-18 2020-09-25 Delmic Ip B V Integrated optical and charged particle inspection apparatus
CA3215592A1 (en) * 2021-04-16 2022-10-20 Ruth Shewmon Bloom Arbitrary electron dose waveforms for electron microscopy
US20230179885A1 (en) * 2021-12-08 2023-06-08 Fei Company Methods and Systems for Processing of Microscopy Images
US12237147B2 (en) 2023-01-31 2025-02-25 Integrated Dynamic Electron Solutions, Inc. Methods and systems for event modulated electron microscopy

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