JP5350478B2 - 電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置 - Google Patents
電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置 Download PDFInfo
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- JP5350478B2 JP5350478B2 JP2011521340A JP2011521340A JP5350478B2 JP 5350478 B2 JP5350478 B2 JP 5350478B2 JP 2011521340 A JP2011521340 A JP 2011521340A JP 2011521340 A JP2011521340 A JP 2011521340A JP 5350478 B2 JP5350478 B2 JP 5350478B2
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 238000010894 electron beam technology Methods 0.000 claims abstract description 19
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 238000001493 electron microscopy Methods 0.000 claims abstract description 7
- 239000013307 optical fiber Substances 0.000 claims description 6
- 230000001186 cumulative effect Effects 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 22
- 238000003384 imaging method Methods 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 description 36
- 230000008901 benefit Effects 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000000835 fiber Substances 0.000 description 6
- 102000004169 proteins and genes Human genes 0.000 description 6
- 108090000623 proteins and genes Proteins 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000012620 biological material Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000002050 diffraction method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 241000700605 Viruses Species 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102000007474 Multiprotein Complexes Human genes 0.000 description 1
- 108010085220 Multiprotein Complexes Proteins 0.000 description 1
- 206010033296 Overdoses Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010219 correlation analysis Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000006916 protein interaction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2441—Semiconductor detectors, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2443—Scintillation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24455—Transmitted particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
- H01J2237/2447—Imaging plates
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/184,995 US7952073B2 (en) | 2008-08-01 | 2008-08-01 | Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy |
| US12/184,995 | 2008-08-01 | ||
| PCT/US2009/052309 WO2010014850A2 (en) | 2008-08-01 | 2009-07-30 | Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011530145A JP2011530145A (ja) | 2011-12-15 |
| JP2011530145A5 JP2011530145A5 (enExample) | 2012-02-02 |
| JP5350478B2 true JP5350478B2 (ja) | 2013-11-27 |
Family
ID=41165553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011521340A Active JP5350478B2 (ja) | 2008-08-01 | 2009-07-30 | 電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7952073B2 (enExample) |
| EP (2) | EP2426694B1 (enExample) |
| JP (1) | JP5350478B2 (enExample) |
| WO (1) | WO2010014850A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010151810A1 (en) * | 2009-06-26 | 2010-12-29 | Gatan, Inc. | Method for discrimination of backscattered from incoming electrons in imaging electron detectors with a thin electron-sensitive layer |
| JP5065516B2 (ja) * | 2010-08-04 | 2012-11-07 | エフ イー アイ カンパニ | 薄い電子検出器における後方散乱の減少 |
| EP2509097A1 (en) * | 2011-04-07 | 2012-10-10 | FEI Company | Method of protecting a radiation detector in a charged particle instrument |
| WO2013013134A2 (en) | 2011-07-21 | 2013-01-24 | The Trustees Of Columbia University In The City Of New York | Method of collecting and processing electron diffraction data |
| WO2014134400A1 (en) * | 2013-02-28 | 2014-09-04 | Direct Electron, Lp | Method of electron beam imaging of a specimen by combining images of an image sequence |
| JP6546933B2 (ja) * | 2014-04-17 | 2019-07-17 | ガタン インコーポレイテッドGatan,Inc. | ハイブリッドエネルギー変換器 |
| CN105376723B (zh) * | 2014-08-21 | 2019-06-14 | 中兴通讯股份有限公司 | 一种实现无线链路处理的方法、基站及终端 |
| JP6914978B2 (ja) * | 2019-02-26 | 2021-08-04 | 日本電子株式会社 | 試料交換装置及び荷電粒子線装置 |
| NL2022756B1 (en) * | 2019-03-18 | 2020-09-25 | Delmic Ip B V | Integrated optical and charged particle inspection apparatus |
| CA3215592A1 (en) * | 2021-04-16 | 2022-10-20 | Ruth Shewmon Bloom | Arbitrary electron dose waveforms for electron microscopy |
| US20230179885A1 (en) * | 2021-12-08 | 2023-06-08 | Fei Company | Methods and Systems for Processing of Microscopy Images |
| US12237147B2 (en) | 2023-01-31 | 2025-02-25 | Integrated Dynamic Electron Solutions, Inc. | Methods and systems for event modulated electron microscopy |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038543A (en) * | 1975-07-08 | 1977-07-26 | Siemens Aktiengesellschaft | Scanning transmission electron microscope including an improved image detector |
| JPS5248964A (en) | 1975-10-17 | 1977-04-19 | Hitachi Ltd | Transmission-type scanning electronic microscope |
| JPS59163506A (ja) * | 1983-03-09 | 1984-09-14 | Hitachi Ltd | 電子ビ−ム測長装置 |
| US4588890A (en) * | 1984-12-31 | 1986-05-13 | International Business Machines Corporation | Apparatus and method for composite image formation by scanning electron beam |
| JPH01117259A (ja) * | 1987-10-30 | 1989-05-10 | Fuji Photo Film Co Ltd | 電子顕微鏡 |
| US4847947A (en) * | 1988-04-11 | 1989-07-18 | Tsong Chi Lin | Base for setting a hinge |
| JPH0225737A (ja) * | 1988-07-15 | 1990-01-29 | Hitachi Ltd | 表面分析方法および装置 |
| JP2793818B2 (ja) * | 1988-10-24 | 1998-09-03 | 株式会社日立製作所 | 表面分析方法およびその装置 |
| JP2717429B2 (ja) * | 1989-01-24 | 1998-02-18 | 富士写真フイルム株式会社 | 電子顕微鏡像記録読取方法 |
| US4941980A (en) * | 1989-02-17 | 1990-07-17 | Opal, Inc. | System for measuring a topographical feature on a specimen |
| US4958079A (en) * | 1989-02-21 | 1990-09-18 | Galileo Electro-Optics Corps. | Detector for scanning electron microscopy apparatus |
| US5097127A (en) * | 1990-02-23 | 1992-03-17 | Ibm Corporation | Multiple detector system for specimen inspection using high energy backscatter electrons |
| DE19649514A1 (de) * | 1996-11-29 | 1998-06-04 | Bosch Gmbh Robert | Handwerkzeugmaschine |
| US6184526B1 (en) | 1997-01-08 | 2001-02-06 | Nikon Corporation | Apparatus and method for inspecting predetermined region on surface of specimen using electron beam |
| JP3434165B2 (ja) * | 1997-04-18 | 2003-08-04 | 株式会社日立製作所 | 走査電子顕微鏡 |
| DE19828476A1 (de) * | 1998-06-26 | 1999-12-30 | Leo Elektronenmikroskopie Gmbh | Teilchenstrahlgerät |
| US6642520B2 (en) * | 1999-04-13 | 2003-11-04 | Kabushiki Kaisha Topcon | Scanning electron microscope |
| US6583413B1 (en) * | 1999-09-01 | 2003-06-24 | Hitachi, Ltd. | Method of inspecting a circuit pattern and inspecting instrument |
| JP2001093455A (ja) * | 1999-09-21 | 2001-04-06 | Nikon Corp | 電子ビーム装置 |
| JP4073149B2 (ja) * | 2000-05-26 | 2008-04-09 | 株式会社日立製作所 | 電子線装置 |
| JP4434446B2 (ja) * | 2000-07-21 | 2010-03-17 | Okiセミコンダクタ株式会社 | 走査型電子顕微鏡の校正方法 |
| WO2002049080A2 (en) * | 2000-12-15 | 2002-06-20 | Kla Tencor Corporation | Method and apparatus for inspecting a substrate |
| DE10156275B4 (de) * | 2001-11-16 | 2006-08-03 | Leo Elektronenmikroskopie Gmbh | Detektoranordnung und Detektionsverfahren |
| JP2003331770A (ja) * | 2002-05-15 | 2003-11-21 | Seiko Instruments Inc | 電子線装置 |
| JP2004039453A (ja) * | 2002-07-03 | 2004-02-05 | Seiko Instruments Inc | 微細ステンシル構造修正装置 |
| US6812462B1 (en) * | 2003-02-21 | 2004-11-02 | Kla-Tencor Technologies Corporation | Dual electron beam instrument for multi-perspective |
| EP1463087B1 (en) | 2003-03-24 | 2010-06-02 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Charged particle beam device |
| DE10317894B9 (de) * | 2003-04-17 | 2007-03-22 | Leo Elektronenmikroskopie Gmbh | Fokussiersystem für geladene Teilchen, Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren |
| PL207199B1 (pl) * | 2003-04-17 | 2010-11-30 | Politechnika Wroclawska | Układ detekcyjny elektronów wtórnych do skaningowego mikroskopu elektronowego |
| EP1620895B1 (en) * | 2003-05-08 | 2016-03-02 | The Science and Technology Facilities Council | Accelerated particle and high energy radiation sensor |
| AU2003270138A1 (en) | 2003-09-02 | 2005-03-16 | Uranos | A method for measuring diffraction patterns from a transmission electron microscopy to determine crystal structures and a device therefor |
| US7154091B2 (en) | 2004-04-02 | 2006-12-26 | California Institute Of Technology | Method and system for ultrafast photoelectron microscope |
| US7135678B2 (en) * | 2004-07-09 | 2006-11-14 | Credence Systems Corporation | Charged particle guide |
| EP1619495A1 (en) | 2004-07-23 | 2006-01-25 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and Apparatus for inspecting a specimen surface and use of fluorescent materials |
| US7262411B2 (en) * | 2004-12-08 | 2007-08-28 | The Regents Of The University Of California | Direct collection transmission electron microscopy |
| JP5403852B2 (ja) * | 2005-08-12 | 2014-01-29 | 株式会社荏原製作所 | 検出装置及び検査装置 |
| JP4908934B2 (ja) * | 2006-06-08 | 2012-04-04 | 株式会社日立ハイテクノロジーズ | 半導体ウェーハ検査装置および半導体ウェーハ検査方法 |
-
2008
- 2008-08-01 US US12/184,995 patent/US7952073B2/en active Active
-
2009
- 2009-07-30 WO PCT/US2009/052309 patent/WO2010014850A2/en not_active Ceased
- 2009-07-30 EP EP11189393A patent/EP2426694B1/en active Active
- 2009-07-30 EP EP09791022A patent/EP2311064A2/en not_active Withdrawn
- 2009-07-30 JP JP2011521340A patent/JP5350478B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011530145A (ja) | 2011-12-15 |
| EP2311064A2 (en) | 2011-04-20 |
| EP2426694A1 (en) | 2012-03-07 |
| US7952073B2 (en) | 2011-05-31 |
| US20100025579A1 (en) | 2010-02-04 |
| EP2426694B1 (en) | 2013-02-13 |
| WO2010014850A3 (en) | 2010-04-01 |
| WO2010014850A2 (en) | 2010-02-04 |
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