JP2011523202A5 - - Google Patents
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- Publication number
- JP2011523202A5 JP2011523202A5 JP2011506732A JP2011506732A JP2011523202A5 JP 2011523202 A5 JP2011523202 A5 JP 2011523202A5 JP 2011506732 A JP2011506732 A JP 2011506732A JP 2011506732 A JP2011506732 A JP 2011506732A JP 2011523202 A5 JP2011523202 A5 JP 2011523202A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- applying
- potential
- electrolyte solution
- anodizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 11
- 239000008151 electrolyte solution Substances 0.000 claims 7
- 238000007743 anodising Methods 0.000 claims 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- 230000002378 acidificating effect Effects 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5009208P | 2008-05-02 | 2008-05-02 | |
| US61/050,092 | 2008-05-02 | ||
| PCT/EP2009/055312 WO2009133196A1 (en) | 2008-05-02 | 2009-04-30 | Method for providing oxide layers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011523202A JP2011523202A (ja) | 2011-08-04 |
| JP2011523202A5 true JP2011523202A5 (cg-RX-API-DMAC7.html) | 2012-02-09 |
| JP5528430B2 JP5528430B2 (ja) | 2014-06-25 |
Family
ID=40941299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011506732A Expired - Fee Related JP5528430B2 (ja) | 2008-05-02 | 2009-04-30 | 酸化層の形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8822330B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2272087B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5528430B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2009133196A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8912522B2 (en) * | 2009-08-26 | 2014-12-16 | University Of Maryland | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
| US10032569B2 (en) * | 2009-08-26 | 2018-07-24 | University Of Maryland, College Park | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
| US9219032B2 (en) * | 2012-07-09 | 2015-12-22 | Qualcomm Incorporated | Integrating through substrate vias from wafer backside layers of integrated circuits |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4005452A (en) * | 1974-11-15 | 1977-01-25 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby |
| US4849370A (en) * | 1987-12-21 | 1989-07-18 | Texas Instruments Incorporated | Anodizable strain layer for SOI semiconductor structures |
| JP2938152B2 (ja) * | 1990-07-06 | 1999-08-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH06350064A (ja) * | 1993-06-07 | 1994-12-22 | Canon Inc | 半導体装置及びその実装方法 |
| US5511428A (en) * | 1994-06-10 | 1996-04-30 | Massachusetts Institute Of Technology | Backside contact of sensor microstructures |
| JP3893645B2 (ja) * | 1996-03-18 | 2007-03-14 | ソニー株式会社 | 薄膜半導体装置およびｉｃカードの製造方法 |
| JP2815001B2 (ja) * | 1996-10-21 | 1998-10-27 | 日本電気株式会社 | 薄膜ｓｏｉ基板の製造方法 |
| US5736454A (en) * | 1997-03-20 | 1998-04-07 | National Science Council | Method for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densification |
| JPH11126906A (ja) * | 1997-10-22 | 1999-05-11 | Semiconductor Energy Lab Co Ltd | 陽極酸化方法 |
| US6352893B1 (en) * | 1999-06-03 | 2002-03-05 | Infineon Technologies Ag | Low temperature self-aligned collar formation |
| DE10147894B4 (de) * | 2001-07-31 | 2007-08-23 | Infineon Technologies Ag | Verfahren zum Füllen von Gräben in integrierten Halbleiterschaltungen |
| DE10138981B4 (de) * | 2001-08-08 | 2005-09-08 | Infineon Technologies Ag | Verfahren zur Bildung von Siliziumoxid durch elektrochemische Oxidation eines Halbleiter-Substrats mit Vertiefungen |
| JP4717290B2 (ja) * | 2001-09-12 | 2011-07-06 | 株式会社フジクラ | 貫通電極の製造方法 |
| EP1505640A1 (en) * | 2002-05-14 | 2005-02-09 | Matsushita Electric Works, Ltd. | Method for electrochemical oxidation |
| JP4035066B2 (ja) * | 2003-02-04 | 2008-01-16 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP4199206B2 (ja) * | 2005-03-18 | 2008-12-17 | シャープ株式会社 | 半導体装置の製造方法 |
-
2009
- 2009-04-30 JP JP2011506732A patent/JP5528430B2/ja not_active Expired - Fee Related
- 2009-04-30 WO PCT/EP2009/055312 patent/WO2009133196A1/en not_active Ceased
- 2009-04-30 EP EP09738240.2A patent/EP2272087B1/en not_active Not-in-force
-
2010
- 2010-10-18 US US12/906,766 patent/US8822330B2/en not_active Expired - Fee Related
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