JP5528430B2 - 酸化層の形成方法 - Google Patents

酸化層の形成方法 Download PDF

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Publication number
JP5528430B2
JP5528430B2 JP2011506732A JP2011506732A JP5528430B2 JP 5528430 B2 JP5528430 B2 JP 5528430B2 JP 2011506732 A JP2011506732 A JP 2011506732A JP 2011506732 A JP2011506732 A JP 2011506732A JP 5528430 B2 JP5528430 B2 JP 5528430B2
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JP
Japan
Prior art keywords
substrate
oxide layer
electrolyte solution
present
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011506732A
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English (en)
Japanese (ja)
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JP2011523202A (ja
JP2011523202A5 (cg-RX-API-DMAC7.html
Inventor
フィリップ・スサン
エリック・ベイネ
フィリップ・ミュレール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of JP2011523202A publication Critical patent/JP2011523202A/ja
Publication of JP2011523202A5 publication Critical patent/JP2011523202A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2011506732A 2008-05-02 2009-04-30 酸化層の形成方法 Expired - Fee Related JP5528430B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5009208P 2008-05-02 2008-05-02
US61/050,092 2008-05-02
PCT/EP2009/055312 WO2009133196A1 (en) 2008-05-02 2009-04-30 Method for providing oxide layers

Publications (3)

Publication Number Publication Date
JP2011523202A JP2011523202A (ja) 2011-08-04
JP2011523202A5 JP2011523202A5 (cg-RX-API-DMAC7.html) 2012-02-09
JP5528430B2 true JP5528430B2 (ja) 2014-06-25

Family

ID=40941299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011506732A Expired - Fee Related JP5528430B2 (ja) 2008-05-02 2009-04-30 酸化層の形成方法

Country Status (4)

Country Link
US (1) US8822330B2 (cg-RX-API-DMAC7.html)
EP (1) EP2272087B1 (cg-RX-API-DMAC7.html)
JP (1) JP5528430B2 (cg-RX-API-DMAC7.html)
WO (1) WO2009133196A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US10032569B2 (en) * 2009-08-26 2018-07-24 University Of Maryland, College Park Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US9219032B2 (en) * 2012-07-09 2015-12-22 Qualcomm Incorporated Integrating through substrate vias from wafer backside layers of integrated circuits

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
US4849370A (en) * 1987-12-21 1989-07-18 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
JP2938152B2 (ja) * 1990-07-06 1999-08-23 株式会社東芝 半導体装置およびその製造方法
JPH06350064A (ja) * 1993-06-07 1994-12-22 Canon Inc 半導体装置及びその実装方法
US5511428A (en) * 1994-06-10 1996-04-30 Massachusetts Institute Of Technology Backside contact of sensor microstructures
JP3893645B2 (ja) * 1996-03-18 2007-03-14 ソニー株式会社 薄膜半導体装置およびｉｃカードの製造方法
JP2815001B2 (ja) * 1996-10-21 1998-10-27 日本電気株式会社 薄膜ｓｏｉ基板の製造方法
US5736454A (en) * 1997-03-20 1998-04-07 National Science Council Method for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densification
JPH11126906A (ja) * 1997-10-22 1999-05-11 Semiconductor Energy Lab Co Ltd 陽極酸化方法
US6352893B1 (en) * 1999-06-03 2002-03-05 Infineon Technologies Ag Low temperature self-aligned collar formation
DE10147894B4 (de) * 2001-07-31 2007-08-23 Infineon Technologies Ag Verfahren zum Füllen von Gräben in integrierten Halbleiterschaltungen
DE10138981B4 (de) * 2001-08-08 2005-09-08 Infineon Technologies Ag Verfahren zur Bildung von Siliziumoxid durch elektrochemische Oxidation eines Halbleiter-Substrats mit Vertiefungen
JP4717290B2 (ja) * 2001-09-12 2011-07-06 株式会社フジクラ 貫通電極の製造方法
EP1505640A1 (en) * 2002-05-14 2005-02-09 Matsushita Electric Works, Ltd. Method for electrochemical oxidation
JP4035066B2 (ja) * 2003-02-04 2008-01-16 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4199206B2 (ja) * 2005-03-18 2008-12-17 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP2272087B1 (en) 2018-04-04
US20110086507A1 (en) 2011-04-14
WO2009133196A1 (en) 2009-11-05
US8822330B2 (en) 2014-09-02
EP2272087A1 (en) 2011-01-12
JP2011523202A (ja) 2011-08-04

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