JP2011520760A - スカル反応炉 - Google Patents

スカル反応炉 Download PDF

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Publication number
JP2011520760A
JP2011520760A JP2011510687A JP2011510687A JP2011520760A JP 2011520760 A JP2011520760 A JP 2011520760A JP 2011510687 A JP2011510687 A JP 2011510687A JP 2011510687 A JP2011510687 A JP 2011510687A JP 2011520760 A JP2011520760 A JP 2011520760A
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JP
Japan
Prior art keywords
silicon
reactor chamber
chamber wall
thermal energy
reactor
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Pending
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JP2011510687A
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English (en)
Japanese (ja)
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JP2011520760A5 (enExample
Inventor
ヒューゴ フランツ
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アールイーシー シリコン インコーポレイテッド
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Application filed by アールイーシー シリコン インコーポレイテッド filed Critical アールイーシー シリコン インコーポレイテッド
Publication of JP2011520760A publication Critical patent/JP2011520760A/ja
Publication of JP2011520760A5 publication Critical patent/JP2011520760A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/0009—Coils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00132—Controlling the temperature using electric heating or cooling elements
    • B01J2219/00135—Electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0871—Heating or cooling of the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0879—Solid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2011510687A 2008-05-23 2009-05-20 スカル反応炉 Pending JP2011520760A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12884708P 2008-05-23 2008-05-23
US61/128,847 2008-05-23
US12/378,250 US20100047148A1 (en) 2008-05-23 2009-02-11 Skull reactor
US12/378,250 2009-02-11
PCT/US2009/044712 WO2009143271A2 (en) 2008-05-23 2009-05-20 Skull reactor

Publications (2)

Publication Number Publication Date
JP2011520760A true JP2011520760A (ja) 2011-07-21
JP2011520760A5 JP2011520760A5 (enExample) 2012-06-07

Family

ID=41340864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011510687A Pending JP2011520760A (ja) 2008-05-23 2009-05-20 スカル反応炉

Country Status (9)

Country Link
US (1) US20100047148A1 (enExample)
EP (1) EP2294005B1 (enExample)
JP (1) JP2011520760A (enExample)
KR (1) KR20110034608A (enExample)
CN (1) CN102083751A (enExample)
CA (1) CA2725062A1 (enExample)
ES (1) ES2408630T3 (enExample)
TW (1) TW201009136A (enExample)
WO (1) WO2009143271A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013523595A (ja) * 2010-04-13 2013-06-17 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶半導体材料の製造方法
KR20220031660A (ko) * 2019-07-04 2022-03-11 슈미트 실리콘 테크놀로지 게엠베하 액체 실리콘을 제조하기 위한 장치 및 방법
KR20220038730A (ko) * 2019-08-08 2022-03-29 슈미트 실리콘 테크놀로지 게엠베하 실리콘 함유 재료의 제조 방법 및 장치

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100189926A1 (en) * 2006-04-14 2010-07-29 Deluca Charles Plasma deposition apparatus and method for making high purity silicon
FR2944520B1 (fr) * 2009-04-17 2011-05-20 Similelt Procede et installation pour la purification du silicium metallurgique.
JP6850004B2 (ja) * 2015-04-29 2021-03-31 １３６６ テクノロジーズ インク． 材料が消費及び補給される溶融材料の含有体積を維持する方法
CN107973300B (zh) * 2016-10-25 2024-01-05 江苏中能硅业科技发展有限公司 液态硅生产装置及方法
DE102017125723A1 (de) * 2017-04-25 2018-10-25 Eeplasma Gmbh Verfahren und Vorrichtung zum Wachsen eines Einkristalls

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JP2001019594A (ja) * 1999-07-01 2001-01-23 Sumitomo Sitix Of Amagasaki Inc シリコン連続鋳造方法
JP2001526171A (ja) * 1997-12-19 2001-12-18 サントル ナスィオナル デ ラ ルシェルシェ スィアンティフィーク シリコンの精製方法および精製装置
JP2008050256A (ja) * 2006-07-28 2008-03-06 Kyocera Corp 粒状結晶の製造方法及び粒状結晶の製造装置

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US4188368A (en) * 1978-03-29 1980-02-12 Nasa Method of producing silicon
US4212343A (en) * 1979-03-16 1980-07-15 Allied Chemical Corporation Continuous casting method and apparatus for structurally defined metallic strips
US4274473A (en) * 1980-01-14 1981-06-23 Allied Chemical Corporation Contour control for planar flow casting of metal ribbon
US4343772A (en) * 1980-02-29 1982-08-10 Nasa Thermal reactor
CA1147698A (en) * 1980-10-15 1983-06-07 Maher I. Boulos Purification of metallurgical grade silicon
DE3419137A1 (de) * 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
DE3629231A1 (de) * 1986-08-28 1988-03-03 Heliotronic Gmbh Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens
US4936375A (en) * 1988-10-13 1990-06-26 Axel Johnson Metals, Inc. Continuous casting of ingots
US5842511A (en) * 1996-08-19 1998-12-01 Alliedsignal Inc. Casting wheel having equiaxed fine grain quench surface
JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
US6468886B2 (en) * 1999-06-15 2002-10-22 Midwest Research Institute Purification and deposition of silicon by an iodide disproportionation reaction
DE60037944T2 (de) * 2000-12-28 2009-01-22 Sumco Corp. Kontinuierliches giessverfahren für silizium
US6960537B2 (en) * 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US7082986B2 (en) * 2002-02-08 2006-08-01 Cornell Research Foundation, Inc. System and method for continuous casting of a molten material
US7175685B1 (en) * 2002-04-15 2007-02-13 Gt Solar Incorporated Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications
RU2213792C1 (ru) * 2002-04-19 2003-10-10 Бурлов Юрий Александрович Плазменный реактор-сепаратор
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JP2005033173A (ja) * 2003-06-16 2005-02-03 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4235066B2 (ja) * 2003-09-03 2009-03-04 日本エー・エス・エム株式会社 薄膜形成方法
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JP5141020B2 (ja) * 2007-01-16 2013-02-13 株式会社Ｓｕｍｃｏ 多結晶シリコンの鋳造方法
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JP2001526171A (ja) * 1997-12-19 2001-12-18 サントル ナスィオナル デ ラ ルシェルシェ スィアンティフィーク シリコンの精製方法および精製装置
JP2001019594A (ja) * 1999-07-01 2001-01-23 Sumitomo Sitix Of Amagasaki Inc シリコン連続鋳造方法
JP2008050256A (ja) * 2006-07-28 2008-03-06 Kyocera Corp 粒状結晶の製造方法及び粒状結晶の製造装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013523595A (ja) * 2010-04-13 2013-06-17 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶半導体材料の製造方法
KR20220031660A (ko) * 2019-07-04 2022-03-11 슈미트 실리콘 테크놀로지 게엠베하 액체 실리콘을 제조하기 위한 장치 및 방법
JP2022538811A (ja) * 2019-07-04 2022-09-06 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 液体シリコンを製造するための装置及び方法
JP7297108B2 (ja) 2019-07-04 2023-06-23 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 液体シリコンを製造するための装置及び方法
KR102689682B1 (ko) * 2019-07-04 2024-07-29 슈미트 실리콘 테크놀로지 게엠베하 액체 실리콘을 제조하기 위한 장치 및 방법
KR20220038730A (ko) * 2019-08-08 2022-03-29 슈미트 실리콘 테크놀로지 게엠베하 실리콘 함유 재료의 제조 방법 및 장치
KR102814341B1 (ko) 2019-08-08 2025-06-05 슈미트 실리콘 테크놀로지 게엠베하 실리콘 함유 재료의 제조 방법 및 장치

Also Published As

Publication number Publication date
CN102083751A (zh) 2011-06-01
TW201009136A (en) 2010-03-01
ES2408630T3 (es) 2013-06-21
EP2294005A2 (en) 2011-03-16
WO2009143271A2 (en) 2009-11-26
EP2294005A4 (en) 2012-01-04
KR20110034608A (ko) 2011-04-05
EP2294005B1 (en) 2013-03-27
WO2009143271A3 (en) 2010-02-25
US20100047148A1 (en) 2010-02-25
CA2725062A1 (en) 2009-11-26

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