ES2408630T3 - Método y reactor de crisol para producir silicio o un metal reactivo - Google Patents
Método y reactor de crisol para producir silicio o un metal reactivo Download PDFInfo
- Publication number
- ES2408630T3 ES2408630T3 ES09751499T ES09751499T ES2408630T3 ES 2408630 T3 ES2408630 T3 ES 2408630T3 ES 09751499 T ES09751499 T ES 09751499T ES 09751499 T ES09751499 T ES 09751499T ES 2408630 T3 ES2408630 T3 ES 2408630T3
- Authority
- ES
- Spain
- Prior art keywords
- silicon
- reaction chamber
- wall
- thermal energy
- reactive metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 99
- 239000010703 silicon Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 39
- 239000002184 metal Substances 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 126
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 238000002844 melting Methods 0.000 claims abstract description 31
- 230000008018 melting Effects 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 117
- 239000002994 raw material Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 26
- 239000011863 silicon-based powder Substances 0.000 claims description 22
- 239000007787 solid Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 5
- 239000005052 trichlorosilane Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- VJIYRPVGAZXYBD-UHFFFAOYSA-N dibromosilane Chemical compound Br[SiH2]Br VJIYRPVGAZXYBD-UHFFFAOYSA-N 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- 238000010309 melting process Methods 0.000 claims description 2
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 claims description 2
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 claims description 2
- IBOKZQNMFSHYNQ-UHFFFAOYSA-N tribromosilane Chemical compound Br[SiH](Br)Br IBOKZQNMFSHYNQ-UHFFFAOYSA-N 0.000 claims description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 1
- AIHCVGFMFDEUMO-UHFFFAOYSA-N diiodosilane Chemical compound I[SiH2]I AIHCVGFMFDEUMO-UHFFFAOYSA-N 0.000 claims 1
- 229910001338 liquidmetal Inorganic materials 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
- -1 triiododosilane Chemical compound 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 25
- 239000000047 product Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 15
- 210000002381 plasma Anatomy 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- 239000000428 dust Substances 0.000 description 8
- 238000007711 solidification Methods 0.000 description 8
- 230000008023 solidification Effects 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 239000012263 liquid product Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-IGMARMGPSA-N silicon-28 atom Chemical compound [28Si] XUIMIQQOPSSXEZ-IGMARMGPSA-N 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/0009—Coils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00132—Controlling the temperature using electric heating or cooling elements
- B01J2219/00135—Electric resistance heaters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0871—Heating or cooling of the reactor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0873—Materials to be treated
- B01J2219/0879—Solid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12884708P | 2008-05-23 | 2008-05-23 | |
| US128847 | 2008-05-23 | ||
| US12/378,250 US20100047148A1 (en) | 2008-05-23 | 2009-02-11 | Skull reactor |
| US378250 | 2009-02-11 | ||
| PCT/US2009/044712 WO2009143271A2 (en) | 2008-05-23 | 2009-05-20 | Skull reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2408630T3 true ES2408630T3 (es) | 2013-06-21 |
Family
ID=41340864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES09751499T Active ES2408630T3 (es) | 2008-05-23 | 2009-05-20 | Método y reactor de crisol para producir silicio o un metal reactivo |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20100047148A1 (enExample) |
| EP (1) | EP2294005B1 (enExample) |
| JP (1) | JP2011520760A (enExample) |
| KR (1) | KR20110034608A (enExample) |
| CN (1) | CN102083751A (enExample) |
| CA (1) | CA2725062A1 (enExample) |
| ES (1) | ES2408630T3 (enExample) |
| TW (1) | TW201009136A (enExample) |
| WO (1) | WO2009143271A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100189926A1 (en) * | 2006-04-14 | 2010-07-29 | Deluca Charles | Plasma deposition apparatus and method for making high purity silicon |
| FR2944520B1 (fr) * | 2009-04-17 | 2011-05-20 | Similelt | Procede et installation pour la purification du silicium metallurgique. |
| DE102010015354A1 (de) * | 2010-04-13 | 2011-10-13 | Schmid Silicon Technology Gmbh | Herstellung eines kristallinen Halbleiterwerkstoffs |
| JP6850004B2 (ja) * | 2015-04-29 | 2021-03-31 | １３６６ テクノロジーズ インク． | 材料が消費及び補給される溶融材料の含有体積を維持する方法 |
| CN107973300B (zh) * | 2016-10-25 | 2024-01-05 | 江苏中能硅业科技发展有限公司 | 液态硅生产装置及方法 |
| DE102017125723A1 (de) * | 2017-04-25 | 2018-10-25 | Eeplasma Gmbh | Verfahren und Vorrichtung zum Wachsen eines Einkristalls |
| DE102019209898A1 (de) * | 2019-07-04 | 2021-01-07 | Schmid Silicon Technology Gmbh | Vorrichtung und Verfahren zur Bildung von flüssigem Silizium |
| DE102019211921A1 (de) * | 2019-08-08 | 2021-02-11 | Schmid Silicon Technology Gmbh | Verfahren und Vorrichtung zur Erzeugung siliziumhaltiger Materialien |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4049384A (en) * | 1975-04-14 | 1977-09-20 | Arthur D. Little, Inc. | Cold crucible system |
| US4188368A (en) * | 1978-03-29 | 1980-02-12 | Nasa | Method of producing silicon |
| US4212343A (en) * | 1979-03-16 | 1980-07-15 | Allied Chemical Corporation | Continuous casting method and apparatus for structurally defined metallic strips |
| US4274473A (en) * | 1980-01-14 | 1981-06-23 | Allied Chemical Corporation | Contour control for planar flow casting of metal ribbon |
| US4343772A (en) * | 1980-02-29 | 1982-08-10 | Nasa | Thermal reactor |
| CA1147698A (en) * | 1980-10-15 | 1983-06-07 | Maher I. Boulos | Purification of metallurgical grade silicon |
| DE3419137A1 (de) * | 1984-05-23 | 1985-11-28 | Bayer Ag, 5090 Leverkusen | Verfahren und vorrichtung zur herstellung von halbleiterfolien |
| DE3629231A1 (de) * | 1986-08-28 | 1988-03-03 | Heliotronic Gmbh | Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens |
| US4936375A (en) * | 1988-10-13 | 1990-06-26 | Axel Johnson Metals, Inc. | Continuous casting of ingots |
| US5842511A (en) * | 1996-08-19 | 1998-12-01 | Alliedsignal Inc. | Casting wheel having equiaxed fine grain quench surface |
| JP3325900B2 (ja) * | 1996-10-14 | 2002-09-17 | 川崎製鉄株式会社 | 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法 |
| FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
| US6468886B2 (en) * | 1999-06-15 | 2002-10-22 | Midwest Research Institute | Purification and deposition of silicon by an iodide disproportionation reaction |
| JP3646570B2 (ja) * | 1999-07-01 | 2005-05-11 | 三菱住友シリコン株式会社 | シリコン連続鋳造方法 |
| DE60037944T2 (de) * | 2000-12-28 | 2009-01-22 | Sumco Corp. | Kontinuierliches giessverfahren für silizium |
| US6960537B2 (en) * | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
| US7082986B2 (en) * | 2002-02-08 | 2006-08-01 | Cornell Research Foundation, Inc. | System and method for continuous casting of a molten material |
| US7175685B1 (en) * | 2002-04-15 | 2007-02-13 | Gt Solar Incorporated | Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications |
| RU2213792C1 (ru) * | 2002-04-19 | 2003-10-10 | Бурлов Юрий Александрович | Плазменный реактор-сепаратор |
| US6780219B2 (en) * | 2002-07-03 | 2004-08-24 | Osram Sylvania Inc. | Method of spheridizing silicon metal powders |
| JP2005033173A (ja) * | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP4235066B2 (ja) * | 2003-09-03 | 2009-03-04 | 日本エー・エス・エム株式会社 | 薄膜形成方法 |
| US20070207268A1 (en) * | 2003-12-08 | 2007-09-06 | Webb R K | Ribbed CVC structures and methods of producing |
| US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
| US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
| JP2008050256A (ja) * | 2006-07-28 | 2008-03-06 | Kyocera Corp | 粒状結晶の製造方法及び粒状結晶の製造装置 |
| JP5141020B2 (ja) * | 2007-01-16 | 2013-02-13 | 株式会社Ｓｕｍｃｏ | 多結晶シリコンの鋳造方法 |
| US20090289390A1 (en) * | 2008-05-23 | 2009-11-26 | Rec Silicon, Inc. | Direct silicon or reactive metal casting |
-
2009
- 2009-02-11 US US12/378,250 patent/US20100047148A1/en not_active Abandoned
- 2009-05-12 TW TW098115642A patent/TW201009136A/zh unknown
- 2009-05-20 KR KR1020107028967A patent/KR20110034608A/ko not_active Withdrawn
- 2009-05-20 WO PCT/US2009/044712 patent/WO2009143271A2/en not_active Ceased
- 2009-05-20 EP EP09751499A patent/EP2294005B1/en not_active Not-in-force
- 2009-05-20 CN CN200980118728.1A patent/CN102083751A/zh active Pending
- 2009-05-20 ES ES09751499T patent/ES2408630T3/es active Active
- 2009-05-20 CA CA2725062A patent/CA2725062A1/en not_active Abandoned
- 2009-05-20 JP JP2011510687A patent/JP2011520760A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN102083751A (zh) | 2011-06-01 |
| TW201009136A (en) | 2010-03-01 |
| EP2294005A2 (en) | 2011-03-16 |
| WO2009143271A2 (en) | 2009-11-26 |
| EP2294005A4 (en) | 2012-01-04 |
| JP2011520760A (ja) | 2011-07-21 |
| KR20110034608A (ko) | 2011-04-05 |
| EP2294005B1 (en) | 2013-03-27 |
| WO2009143271A3 (en) | 2010-02-25 |
| US20100047148A1 (en) | 2010-02-25 |
| CA2725062A1 (en) | 2009-11-26 |
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