JP2011518408A - 単色中性ビームで活性化される化学プロセスシステム及び当該システムの使用方法 - Google Patents
単色中性ビームで活性化される化学プロセスシステム及び当該システムの使用方法 Download PDFInfo
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Abstract
Description
Claims (23)
- 基板を処理するように備えられた化学プロセスシステムであって:
第1圧力で第1プロセスガスを受け入れるように備えられた第1プラズマ領域を有するプラズマ生成チャンバ;
前記第1プラズマ領域からガスが流れる先に設けられ、かつ第2圧力で前記第1プラズマ領域から前記第1プロセスガスを受け入れるように備えられた第2プラズマ領域を有するプロセスチャンバ;
前記プラズマ生成チャンバと結合し、かつ前記第1プロセスガスを前記第1プラズマ領域に導入するように備えられた第1ガス注入システム;
前記プラズマ生成チャンバと結合し、かつ前記第1プロセスガスから前記第1プラズマ領域内で第1プラズマポテンシャルの第1プラズマを生成するように備えられたプラズマ生成システム;
前記第1プラズマ領域と前記第2プラズマ領域との間に設けられた分離部材であって、前記第1プラズマ領域から前記第2プラズマ領域への電子束が、第2プラズマポテンシャルの第2プラズマを生成することを可能にするように備えられた1つ以上の開口部を有する分離部材;
前記プロセスチャンバと結合し、かつ、前記電子束を制御するため、前記第2プラズマポテンシャルを前記第1プラズマポテンシャルよりも高くするように備えられたバイアス電極システム;
前記プロセスチャンバと結合し、かつ、前記第2プラズマ領域付近で前記基板を支持するように備えられた基板ホルダ;並びに、
前記プロセスチャンバと結合し、かつ、前記のプロセスチャンバ内の第2プラズマ領域を排気するように備えられた真空排気システム;
を有する化学プロセスシステム。 - 前記プロセスチャンバと結合し、かつ前記第2プラズマ領域へ第2プロセスガスを導入するように備えられた第2ガス注入システム154をさらに有する、請求項1に記載の化学プロセスシステム。
- 前記プラズマ生成システムは、電源からの出力を前記の第1プラズマ領域内の第1プロセスガスに誘導結合する誘導コイルを有する、請求項1に記載の化学プロセスシステム。
- 前記プラズマ生成システムは、容量結合プラズマ(CCP)源、誘導結合プラズマ(ICP)源、変成器結合プラズマ(TCP)源、表面波プラズマ源、ヘリコン波プラズマ源、電子サイクロトロン共鳴(ECR)プラズマ源、又は上記2つ以上の組み合わせを有する、請求項1に記載の化学プロセスシステム。
- 前記プラズマ生成チャンバは、前記第1プラズマと接する境界として機能する伝導性表面を有する少なくとも1つの直流(DC)伝導性電極を有し、かつ
前記少なくとも1つのDC伝導性接地電極はDC接地電位と結合する、
請求項1に記載の化学プロセスシステム。 - 前記少なくとも1つのDC伝導性接地電極はドーピングされたシリコン電極を有する、請求項5に記載の化学プロセスシステム。
- 前記の少なくとも1つのDC伝導性接地電極は前記第1プラズマと接する伝導性表面を有し、かつ
前記伝導性表面の面積は、前記の第1プラズマと接する他の表面積よりも大きい、
請求項5に記載の化学プロセスシステム。 - 前記分離部材が誘電材料で構成される、請求項1に記載の化学プロセスシステム。
- 前記の分離部材内の1つ以上の開口部がデバイ長以上の直径を有する、請求項1に記載の化学プロセスシステム。
- 前記バイアス電極システムは、前記第2プラズマと接する伝導性表面を有する少なくとも1つのDC伝導性バイアス電極を有し、かつ
前記少なくとも1つのDC伝導性バイアス電極はDC電源と結合する、
請求項1に記載の化学プロセスシステム。 - 前記少なくとも1つのDC伝導性バイアス電極はドーピングされたシリコン電極を有する、請求項10に記載の化学プロセスシステム。
- 前記DC電源が、50V〜1000Vの範囲であるDC電圧で前記少なくとも1つのDC伝導性バイアス電極にバイアス印加するように備えられている、請求項10に記載の化学プロセスシステム。
- 前記プロセスチャンバが:
DC伝導性材料から作られ、かつ接地電位に結合するチャンバ筐体;
誘電材料から作られ、かつ前記第2プラズマから前記チャンバ筐体を電気的に絶縁するように備えられているライナ部材;
前記少なくとも1つのDC伝導性バイアス電極への電気的接続を可能にするように備えられている電気フィードスルー;及び、
前記少なくとも1つのDC伝導性バイアス電極と前記チャンバ筐体との間に設けられた電極絶縁体であって、前記少なくとも1つのDC伝導性バイアス電極を前記チャンバ筐体から電気的に絶縁するように備えられている電極絶縁体;
を有する、
請求項10に記載の化学プロセスシステム。 - 前記基板ホルダがDC接地電位と結合し、かつ
前記基板がDC接地電位又は浮遊接地電位である、
請求項1に記載の化学プロセスシステム。 - 前記プラズマ生成システム、前記バイアス電極システム、前記プロセスチャンバ、前記第1ガス注入システム、前記基板ホルダ、及び前記真空排気システムと結合する制御装置をさらに有する請求項1に記載の化学プロセスシステムであって、
前記制御装置は、前記プラズマ生成システムによって前記の第1プラズマ領域内の第1プラズマに結合される出力、前記バイアス電極システムによって前記第2プラズマと結合されるDC電圧、前記プラズマ生成チャンバと結合する前記第1プロセスガスの組成、前記プラズマ生成チャンバと結合する前記第1プロセスガスの流速、前記プロセスチャンバと結合する排気速度、若しくは前記基板の温度、又は上記2つ以上の組み合わせのうちの少なくとも1つを変化させることによって前記第2プラズマの調節又は制御を行うように備えられている、
化学プロセスシステム。 - 基板を処理するように備えられた化学プロセスシステムであって:
第1プラズマポテンシャルで第1プラズマを生成する第1プラズマチャンバ;
前記第1プラズマポテンシャルよりも大きい第2プラズマポテンシャルで第2プラズマを生成する第2プラズマチャンバであって、前記第2プラズマは前記第1プラズマからの電子束を用いて生成される、第2プラズマチャンバ;及び
前記第2プラズマチャンバ内に基板を設置するように備えられた基板ホルダ;
を有する、化学プロセスシステム。 - 前記第1プラズマがDC接地電圧で第1境界によって駆動され、かつ
前記第2プラズマがDCバイアス電圧で第2境界によって駆動される、
請求項16に記載の化学プロセスシステム。 - 前記基板ホルダがDC接地電位と結合し、かつ
前記基板がDC接地電位又は浮遊接地電位である、
請求項16に記載の化学プロセスシステム。 - 前記第1プラズマチャンバが、前記第1プラズマと接する伝導性表面を有する少なくともDC伝導性接地電極を有し、かつ
前記少なくともDC伝導性接地電極はDC接地電位と結合する、
請求項16に記載の化学プロセスシステム。 - 前記第1プラズマチャンバと前記第2プラズマチャンバとの間に設けられた分離部材をさらに有する請求項16に記載の化学プロセスシステムであって、
前記分離部材は、前記第1プラズマから前記第2プラズマへの電子束を可能にするように備えられた1つ以上の開口部を有し、かつ
前記分離部材は誘電材料で構成される、
化学プロセスシステム。 - 前記第2プラズマ領域が、前記第2プラズマと接する伝導性表面を有する少なくとも1つのDC伝導性バイアス電極を有し、かつ
前記少なくとも1つのDC伝導性バイアス電極がDC電源と結合する、
請求項16に記載の化学プロセスシステム。 - 基板の処理方法であって:
前記基板を処理するように備えられたプロセスチャンバ内に基板を設ける工程;
第1プラズマ領域内で第1プラズマポテンシャルの第1プラズマを生成する工程;
前記第1プラズマ領域からの電子束を用いることによって、第2プラズマ領域内で第2プラズマポテンシャルの第2プラズマを生成する工程;
前記電子束を制御するため、前記第2プラズマポテンシャルを前記第1プラズマポテンシャルよりも高くする工程;
前記プロセスチャンバ内の圧力を制御する工程;並びに、
前記基板を前記第2プラズマに暴露する工程;
を有する方法。 - 前記の基板を前記第2プラズマに暴露する工程が、単色の空間電荷が中性化した中性ビームによって活性化された化学プロセスに前記基板を暴露する工程を有する、請求項22に記載の方法。
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US12/053,008 | 2008-03-21 | ||
US12/053,008 US9520275B2 (en) | 2008-03-21 | 2008-03-21 | Mono-energetic neutral beam activated chemical processing system and method of using |
PCT/US2009/037736 WO2009117624A2 (en) | 2008-03-21 | 2009-03-20 | Mono-energetic neutral beam activated chemical processing system and method of using |
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US20170062188A1 (en) | 2017-03-02 |
JP5678351B2 (ja) | 2015-03-04 |
US9520275B2 (en) | 2016-12-13 |
TWI430716B (zh) | 2014-03-11 |
KR101592613B1 (ko) | 2016-02-05 |
US10734200B2 (en) | 2020-08-04 |
WO2009117624A3 (en) | 2010-01-07 |
US20090236314A1 (en) | 2009-09-24 |
WO2009117624A2 (en) | 2009-09-24 |
CN101999155A (zh) | 2011-03-30 |
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