WO2020059174A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents
基板処理装置、半導体装置の製造方法およびプログラム Download PDFInfo
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- WO2020059174A1 WO2020059174A1 PCT/JP2019/009658 JP2019009658W WO2020059174A1 WO 2020059174 A1 WO2020059174 A1 WO 2020059174A1 JP 2019009658 W JP2019009658 W JP 2019009658W WO 2020059174 A1 WO2020059174 A1 WO 2020059174A1
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- C23C16/52—Controlling or regulating the coating process
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Definitions
- the present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.
- LSI large-scale integrated circuits
- DRAMs Dynamic Random Access Access Memory
- flash memories and the like
- miniaturization of circuit patterns has been promoted.
- a process using plasma may be performed as a process for realizing miniaturization.
- Patent Document 1 there is a technique described in Patent Document 1.
- the present disclosure aims to form a uniform film on a substrate surface.
- a processing chamber for processing a substrate for processing a substrate, a gas supply system for supplying a processing gas to the processing chamber, and a processing gas provided around the outer periphery of the processing chamber are provided.
- FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to a first embodiment of the present disclosure.
- 1 is a schematic configuration diagram of a controller of a substrate processing apparatus according to a first embodiment of the present disclosure.
- FIG. 2 is a flowchart illustrating a substrate processing step according to the first embodiment of the present disclosure.
- 5 is a sequence example of a substrate processing step according to the first embodiment of the present disclosure. It is a schematic structure figure of a substrate processing device concerning a second embodiment of the present disclosure.
- the substrate processing apparatus 100 is, for example, an insulating film forming unit, and is configured as a single-wafer-type substrate processing apparatus as shown in FIG.
- the substrate processing apparatus 100 includes a processing container 202.
- the processing container 202 is configured as, for example, a flat closed container having a circular horizontal cross section.
- the processing container 202 is made of, for example, a metal material such as aluminum (Al) or stainless steel (SUS), or an insulating material such as quartz or alumina.
- a processing chamber 201 for processing a wafer 200 such as a silicon wafer as a substrate and a transfer chamber 203 are formed.
- the processing container 202 mainly includes a lid 231, an upper container 202a, a lower container 202b, and a partition plate 204 provided between the upper container 202a and the lower container 202b.
- a space surrounded by the lid 231, the upper container 202 a, the partition plate 204, a second gas dispersion plate unit 235 b described below, and a second plasma unit 270 b described later is referred to as a processing chamber 201, and a space surrounded by the lower container 202 b Is called a transfer chamber 203.
- a substrate loading / unloading port 1480 adjacent to the gate valve 1490 is provided on a side surface of the lower container 202b, and the wafer 200 moves between the substrate loading / unloading port 1480 and a transfer chamber (not shown).
- a plurality of lift pins 207 are provided at the bottom of the lower container 202b. Further, the lower container 202b is grounded.
- the processing chamber 201 is provided with a substrate support 210 that supports the wafer 200.
- the substrate supporting unit 210 includes a substrate mounting surface 211 on which the wafer 200 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on the surface, a heater 213 as a heating unit included in the substrate mounting table 212, and a susceptor electrode. 256 mainly.
- through holes 214 through which the lift pins 207 pass are provided at positions corresponding to the lift pins 207, respectively.
- the bias adjuster 257 is connected to the susceptor electrode 256 so that the potential of the susceptor electrode 256 can be adjusted.
- the bias adjuster 257 is configured to adjust the potential of the susceptor electrode 256 by the controller 260.
- the substrate mounting table 212 is supported by the shaft 217.
- the shaft 217 penetrates the bottom of the lower container 202b, and is connected to the elevating mechanism 218 outside the lower container 202b.
- the elevating mechanism 218 By operating the elevating mechanism 218 to elevate and lower the shaft 217 and the substrate mounting table 212, it is possible to elevate and lower the wafer 200 mounted on the substrate mounting surface 211.
- the periphery of the lower end of the shaft 217 is covered with a bellows 219, and the processing chamber 201 is kept airtight.
- the substrate mounting table 212 moves down to the wafer transfer position shown by the broken line in FIG. 1 when the wafer 200 is transferred, and rises to the processing position (wafer processing position) shown in FIG.
- the lift pins 207 move the wafer 200 downward. It comes to support from. Further, when the substrate mounting table 212 is raised to the wafer processing position, the lift pins 207 are buried from the upper surface of the substrate mounting surface 211, and the substrate mounting surface 211 supports the wafer 200 from below. Note that, since the lift pins 207 are in direct contact with the wafer 200, it is desirable that the lift pins 207 be formed of a material such as quartz, alumina, or silicon carbide.
- An exhaust port 221 for exhausting the atmosphere in the processing chamber 201 and the transfer chamber 203 is provided on the side of the lower container 202b.
- An exhaust pipe 224 is connected to the exhaust port 221, and a pressure regulator 227 such as an APC (Auto Pressure Controller) for controlling the processing chamber 201 to a predetermined pressure and a vacuum pump 223 are sequentially connected to the exhaust pipe 224 in series. It is connected.
- APC Auto Pressure Controller
- a first gas inlet 241 a for supplying various gases to the processing chamber 201 is provided on a side portion of the partition plate 204. Further, a second gas inlet 241 b for supplying various gases to the processing chamber 201 is provided above the processing chamber 201.
- the configuration of each gas supply unit connected to the first gas inlet 241a serving as the first gas supply unit and the second gas inlet 241b serving as the second gas supply unit will be described later.
- the first gas dispersion unit 235a as a mechanism for dispersing gas has a ring-like shape including a first buffer chamber 232a and a plurality of first dispersion holes 234a, and is disposed adjacent to the partition plate 204.
- the second gas dispersion unit 235b has a ring shape including a second buffer chamber 232b and a plurality of second dispersion holes 234b, and is disposed between the lid 231 and a second plasma unit 270b described later. I have.
- the first gas introduced from the first gas inlet 241a is supplied to the first buffer chamber 232a of the first gas distribution unit 235a, and is supplied to the processing chamber 201 through the plurality of first dispersion holes 234a.
- the second gas introduced from the second gas inlet 241b is supplied to the second buffer chamber 232b of the second gas distribution unit 235b, and is supplied to the processing chamber 201 through the plurality of second dispersion holes 234b.
- the first plasma unit 270a arranged to be wound around the outer periphery of the upper container 202a includes a spiral coil electrode (coil) 253a of 1 to 10 turns made of a conductive metal pipe and a conductive metal plate.
- the electromagnetic wave shield 254a has a cylindrical shape. High-frequency power from the high-frequency power supply 252a is supplied via a matching unit 251a connected in parallel to both ends of the coil electrode 253a, and a grounding unit connected to the vicinity of the middle of the coil electrode 253a and the electromagnetic wave shield 254a.
- the reaction gas When a reaction gas is supplied to the processing chamber 201, the reaction gas is induced by an AC magnetic field generated by the coil electrode 253a, and an inductively coupled plasma (ICP) is generated.
- the permanent magnet 255 can be introduced above and below the coil electrode 253a as needed to assist in plasma generation.
- the DC magnetic field B generated by the permanent magnet 255 is generated by interacting with the plasma in the JxB drift mode generated by interacting with the plasma current J induced by the coil electrode 253a and the AC electric field E generated by the coil electrode 253a. ExB drift mode plasma is generated.
- the plasma density is increased, and the amount of active species generated in the reaction gas can be significantly improved.
- a capacitively coupled plasma (abbreviation: CCP) using a flat plate electrode instead of the coil electrode 253a can be employed.
- CCP capacitively coupled plasma
- the plasma generated by interacting with the magnetic field of the permanent magnet 255 has only the ExB drift mode.
- the first plasma unit 270a is provided with the permanent magnet 255 to assist in plasma generation, the plasma electrons are captured (trapped) by the magnetic field of the permanent magnet 255, so that the plasma electrons are lost on the side surface of the processing chamber 201.
- the activity (extinction) rate decreases. As a result, the plasma generation efficiency increases.
- a second plasma unit 270b disposed above the upper container 202a and partially protruding inside the processing chamber 201 is a U-shaped coil made of a conductive metal pipe protected by an insulating member 271 fixed to a pedestal 272.
- the electromagnetic wave shield 254b has a cylindrical shape or a rectangular parallelepiped shape formed of an electrode (also simply referred to as a coil) 253b and a conductive metal plate.
- the insulating member 271 is made of an insulating material, and is provided so as to be discharged into the upper part of the processing chamber 201.
- the coil electrode 253b is provided along the insulating member 271.
- the insulating member 271 has a rectangular parallelepiped shape, a cylindrical shape, or a pipe shape with a rounded protruding portion, and the atmosphere inside and outside thereof is isolated by a vacuum seal.
- High-frequency power from the high-frequency power supply 252b is supplied via a matching unit 251b connected to one end of the coil electrode 253b and a ground unit connected to the other end of the coil electrode 253b and the electromagnetic wave shield 254b.
- a reaction gas is supplied to the processing chamber 201, the reaction gas is induced by an AC magnetic field generated by the coil electrode 253b, and inductively coupled plasma (ICP) is generated.
- ICP inductively coupled plasma
- a remote plasma unit may be employed instead of the second plasma unit 270b.
- the ratio (region) of the plasma coupled (intersecting) with the electromagnetic field generated from the coil electrode 253b increases, so that the input efficiency of the RF power of the plasma is improved. Go up. As a result, the plasma generation efficiency increases.
- the second plasma unit 270b includes a U-shaped coil electrode 253b formed of a conductive metal pipe protected by an insulating member, and a cylindrical or rectangular electromagnetic wave shield 254b formed of a conductive metal plate.
- the coil electrode 253b is not limited to the U-shape, and may be, for example, a disk-shaped or spiral-shaped coil.
- the second plasma unit 270b is not limited to the case where one is provided at a position corresponding to the center of the wafer 200, for example, and a plurality of second plasma units 270b may be provided based on the plasma distribution.
- a first gas supply pipe 150a is connected to the first gas inlet 241a.
- a first processing gas supply pipe 113 and a purge gas supply pipe 133a are connected to the first gas supply pipe 150a, and a first processing gas and a purge gas described later are supplied to the first gas inlet 241a.
- the second gas supply pipe 150b is connected to the second gas inlet 241b.
- a second processing gas supply pipe 123 and a purge gas supply pipe 133b are connected to the second gas supply pipe 150b, and a second processing gas and a purge gas described later are supplied to the second gas inlet 241b.
- the first processing gas supply system includes a first processing gas supply pipe 113, a mass flow controller (MFC) 115, and a valve 116.
- the first processing gas source may be included in the first processing gas supply system.
- a vaporizer may be provided.
- the second processing gas supply system is provided with a second processing gas supply pipe 123, an MFC 125, and a valve 126. Note that the second processing gas source may be included in the second processing gas supply system.
- the purge gas supply system includes two systems, a system including a purge gas supply pipe 133a, an MFC 135a, and a valve 136a, and a system including a purge gas supply pipe 133b, an MFC 135b, and a valve 136b.
- the purge gas source may be included in the purge gas supply system.
- the substrate processing apparatus 100 has a controller 260 that controls the operation of each unit of the substrate processing apparatus 100.
- FIG. 2 shows an outline of the controller 260.
- the controller 260 which is a control unit (control device), is configured as a computer including a CPU (Central Processing Unit) 260a, a RAM (Random Access Memory) 260b, a storage device 260c, and an I / O port 260d.
- the RAM 260b, the storage device 260c, and the I / O port 260d are configured to be able to exchange data with the CPU 260a via the internal bus 260e.
- the controller 260 is configured to be connectable to an input / output device 261 configured as, for example, a touch panel, an external storage device 262, a receiving unit 285, and the like.
- the storage device 260c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program for controlling the operation of the substrate processing apparatus 100, a process recipe describing a substrate processing procedure and conditions to be described later, and a process recipe used for processing the wafer 200 are set. Operation data and processing data generated in the process are stored in a readable manner.
- the process recipe is a combination of the controller 260 that executes each procedure in a substrate processing process described below to obtain a predetermined result, and functions as a program.
- the program recipe, the control program, and the like are collectively referred to simply as a program.
- program may include only a program recipe alone, may include only a control program, or may include both.
- the RAM 260b is configured as a memory area (work area) in which data such as programs, operation data, and processing data read by the CPU 260a is temporarily stored.
- the I / O port 260d includes a gate valve 1490, an elevating mechanism 218, a heater 213, a pressure regulator 227, a vacuum pump 223, matching devices 251a and 251b, high-frequency power supplies 252a and 252b, MFCs 115, 125, 135a, and 135b, and valves 116 and 135. 126, 136a, and 136b, a bias adjuster 257, and the like.
- the CPU 260a as an arithmetic unit is configured to read and execute a control program from the storage device 260c, and read a process recipe from the storage device 260c in response to input of an operation command from the input / output device 261 and the like. Further, the setting value input from the receiving unit 285 is compared with a process recipe or control data stored in the storage device 260c to calculate and calculate calculation data. Further, it is configured to be able to execute a process of determining corresponding processing data (process recipe) from the calculation data.
- the CPU 260a performs an opening / closing operation of the gate valve 1490, an elevating operation of the elevating mechanism 218, an operation of supplying power to the heater 213, a pressure adjusting operation of the pressure regulator 227, and a vacuum operation in accordance with the contents of the read process recipe.
- gas flow control operation of the MFCs 115, 125, 135a, 135b, gas on / off operation of the valves 116, 126, 136a, 136b power matching control of the matching devices 251a, # 251b, high frequency power supplies 252a, 252b , And the potential of the susceptor electrode 256 by the bias adjuster 257 can be controlled.
- the controller 260 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer.
- an external storage device for example, a magnetic tape, a magnetic disk such as a flexible disk and a hard disk, an optical disk such as a CD and a DVD, a magneto-optical disk such as an MO, and a semiconductor memory such as a USB memory and a memory card
- the controller 260 according to the present embodiment can be configured by preparing the computer 262 and installing a program in a general-purpose computer using the external storage device 262.
- the means for supplying the program to the computer is not limited to the case where the program is supplied via the external storage device 262.
- a communication unit such as the receiving unit 285 or the network 263 (the Internet or a dedicated line) may be used to supply the program without passing through the external storage device 262.
- the storage device 260c and the external storage device 262 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- the term “recording medium” may include only the storage device 260c, include only the external storage device 262, or include both of them.
- the term “wafer” may mean the wafer itself, or may mean a laminate of the wafer and a processing layer or film formed on the surface thereof.
- the term “surface of the wafer” may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer.
- the phrase "forming a predetermined layer on a wafer” means that a predetermined layer is directly formed on the surface of the wafer itself, or a layer formed on the wafer. It may mean forming a predetermined layer on the substrate. Any use of the term “substrate” in this specification is synonymous with the use of the term "wafer”.
- Substrate loading step S201 In forming a film, first, the wafer 200 is loaded into the processing chamber 201. Specifically, the substrate support 210 is lowered by the elevating mechanism 218 so that the lift pins 207 protrude from the through holes 214 toward the upper surface of the substrate support 210. After adjusting the processing chamber 201 and the transfer chamber 203 to a predetermined pressure, the gate valve 1490 is opened, and the wafer 200 is transferred through the substrate loading / unloading port 1480 using a transport mechanism (not shown) such as a tweezer. It is placed on the lift pins 207.
- a transport mechanism not shown
- the gate valve 1490 is closed, and the substrate support 210 is raised to a predetermined position by the elevating mechanism 218, whereby the wafer 200 is placed on the substrate support 210 from the lift pins 207. Will be placed.
- the substrate support 210 is heated in advance by the heater 213, and is left for a certain time after the temperature of the wafer 200 or the substrate support 210 is stabilized. During this time, if there is moisture remaining in the processing chamber 201 or degassing from the members, purging with N 2 gas or the like is effective in removing them. This completes the preparation before the film formation process. Before setting the processing chamber 201 to a predetermined pressure, the processing chamber 201 may be once evacuated to an attainable degree of vacuum.
- the temperature of the heater 213 is set to a constant temperature within a range of 100 to 600 ° C., preferably 150 to 500 ° C., more preferably 250 to 450 ° C. from the temperature at the time of idling.
- the bias adjuster 257 applies a voltage to the susceptor electrode 256 so that the potential of the wafer 200 becomes a predetermined potential.
- first process gas supply step S203 In the first processing gas supply step S203, dichlorosilane (SiH 2 Cl 2 , dichlorosilane: DCS) gas as a first processing gas (source gas) is supplied from the first processing gas supply system to the processing chamber 201. Specifically, the valve 116 is opened, the flow rate of the first processing gas supplied from the processing gas supply source is adjusted by the MFC 115, and then the first processing gas is supplied to the substrate processing apparatus 100. The first processing gas whose flow rate has been adjusted passes through the first buffer chamber 232a of the first gas dispersion unit 235a and is supplied to the processing chamber 201 in a reduced pressure state from the plurality of first dispersion holes 234a.
- dichlorosilane (SiH 2 Cl 2 , dichlorosilane: DCS) gas as a first processing gas (source gas) is supplied from the first processing gas supply system to the processing chamber 201.
- the valve 116 is opened, the flow rate of the first processing gas supplied from the processing gas
- the evacuation of the processing chamber 201 by the evacuation system is continued, and the pressure regulator 227 is controlled so that the pressure of the processing chamber 201 falls within a predetermined pressure range (first pressure).
- the first processing gas is supplied to the processing chamber 201 at a predetermined pressure (first pressure: for example, 100 Pa or more and 10 kPa or less).
- first pressure for example, 100 Pa or more and 10 kPa or less.
- the silicon-containing layer is formed on the wafer 200 by supplying the first processing gas.
- the silicon-containing layer is a layer containing silicon (Si) or silicon and chlorine (Cl).
- First purge step S204 In the first purge step S204, after the silicon-containing layer is formed on the wafer 200, the valve 116 of the first processing gas supply pipe 113 is closed, and the supply of the first processing gas is stopped. By continuing the operation of the vacuum pump 223 and stopping the first processing gas, the residual gas such as the first processing gas and the reaction by-product present in the processing chamber 201 and the processing gas remaining in the first buffer chamber 232a are removed. Purging is performed by evacuating from the vacuum pump 223.
- the valve 136a of the purge gas supply system by opening the valve 136a of the purge gas supply system, to adjust the MFC135a, by supplying the N 2 gas as a purge gas, it is possible to push out the residual gas in the first buffer chamber 232a, also first on the wafer 200 (1)
- the efficiency of removing residual gases such as process gas and reaction by-products is increased.
- another purge gas supply system may be combined, or supply and stop of the purge gas may be alternately performed.
- valve 136a After a predetermined time has elapsed, the valve 136a is closed, and the supply of the purge gas is stopped. The supply of the purge gas may be continued with the valve 136a opened. By continuing to supply the purge gas to the first buffer chamber 232a, it is possible to prevent the processing gas of another step from entering the first buffer chamber 232a in another step.
- the flow rate of the purge gas supplied to the processing chamber 201 and the first buffer chamber 232a does not need to be large, and for example, by supplying an amount similar to the volume of the processing chamber 201, Purge can be performed to such an extent that no adverse effects occur.
- the purging time can be shortened and the manufacturing throughput can be improved.
- the consumption of the purge gas can be suppressed to a necessary minimum.
- the temperature of the heater 213 is set to be the same as that at the time of supplying the first processing gas to the wafer 200.
- the supply flow rate of the purge gas supplied from the purge gas supply system is, for example, a flow rate within a range of 100 to 10000 sccm.
- a rare gas such as Ar, He, Ne, or Xe may be used in addition to the N 2 gas, or a combination of these gases may be used.
- Step S205 In the second processing gas supply step S205, the valve 126 of the second processing gas supply system is opened, and the processing chamber under reduced pressure is passed through the second buffer chamber 232b of the second gas dispersion unit 235b and the plurality of second dispersion holes 234b.
- Ammonia (NH 3 ) gas is supplied to 201 as a second processing gas (a reaction gas serving as a second processing gas having a different chemical structure (molecular structure) from the first processing gas).
- the exhaust of the processing chamber 201 by the exhaust system is continued, and the MFC 125 is adjusted so that the second processing gas has a predetermined flow rate (for example, 100 sccm or more and 5000 sccm or less) so that the processing chamber 201 has a predetermined pressure.
- the pressure regulator 227 is controlled (second pressure: for example, 1 Pa or more and 200 Pa or less).
- high-frequency power is supplied from the high-frequency power supplies 252a and 252b to the coil electrode 253a of the first plasma unit 270a and the coil electrode 253b of the second plasma unit 270b via the matching devices 251a and 251b.
- the high-frequency power at this time is optimally distributed between the high-frequency power supply 252a and the high-frequency power supply 252b so that the plasma distribution in the processing chamber 201 is uniform in the horizontal direction on the wafer 200.
- the supply of the high-frequency power is started at the same time as the supply of the second processing gas. However, the supply of the high-frequency power may be performed before the start of the supply of the second processing gas, or may be continued thereafter. good.
- plasma of the second processing gas can be generated on the wafer 200.
- the activated species of the activated (excited) second processing gas can be supplied to the silicon-containing layer, and the silicon-containing layer can be subjected to nitriding at a low temperature.
- the power supplied from the high-frequency power supply 252a to the first plasma unit 270a is set to 1000 to 5000 W, preferably 3000 to 5000 W, and more preferably 3500 to 4500 W.
- the power is less than 1000 W, the CCP mode plasma becomes dominant, so that the generation amount of the active species becomes extremely low. Therefore, the processing speed of the wafer is greatly reduced.
- the power exceeds 5000 W, the plasma starts to strongly sputter the inner wall of the reaction chamber made of a quartz material, so that materials such as Si and O, which are not desirable for the film on the wafer 200 (a film other than the SiO film), are supplied. You.
- the power supplied from the high frequency power supply 252b to the second plasma unit 270b is set to 100 to 2000 W, preferably 500 to 1000 W.
- the power is less than 100 W, the CCP mode plasma becomes dominant, so that the generation amount of active species becomes very low. Therefore, the processing speed of the wafer is greatly reduced.
- the power exceeds 1000 W, the plasma starts to sputter strongly on the outer wall (reaction chamber side) of the quartz protective member, so that materials such as Si and O which are not desirable for the film on the substrate (the film other than the SiO film) are supplied. .
- the plasma processing time is 60 to 600 seconds, preferably 120 to 300 seconds. If the time is less than 60 seconds, a sufficient film thickness cannot be achieved. On the other hand, if the time exceeds 600 seconds, the uniformity of the film is adversely affected by the step on the surface of the wafer 200 or the step on the wafer 200, and further, the wafer 200 is damaged.
- the supply amount of the plasma charged particles to the wafer 200 can be controlled. For example, when the surface of the wafer 200 is stepped, suppressing the supply amount of the plasma charged particles is effective in improving the coverage of the film formation.
- the silicon-containing layer is also subjected to a reforming process such as recovery of molecular bond defects and desorption of impurities. Is done. For example, depending on the pressure of the processing chamber 201, the flow rate of the second processing gas by the MFC 125, the temperature of the wafer 200 by the heater 213, the power of the high-frequency power supplies 252a and 252b, the potential of the susceptor electrode 256 by the bias adjuster 257, and the like. A nitridation treatment or a modification treatment is performed on the silicon-containing layer at a distribution, a predetermined depth, and a predetermined nitrogen composition ratio.
- valve 126 of the second processing gas supply system is closed, and the supply of the second processing gas is stopped.
- the temperature of the heater 213 is set to be the same as that at the time of supplying the first processing gas to the wafer 200.
- Step S206 In the second purge step S206, after the nitrogen-containing layer is formed on the wafer 200, the valve 126 of the second processing gas supply pipe 123 is closed, and the supply of the second processing gas is stopped. By continuing the operation of the vacuum pump 223 and stopping the second processing gas, the residual gas such as the second processing gas and the reaction by-product present in the processing chamber 201 and the processing gas remaining in the second buffer chamber 232b are removed. Purging is performed by evacuating from the vacuum pump 223.
- valve 136b is closed to stop the supply of the purge gas.
- the supply of the purge gas may be continued with the valve 136b opened.
- the flow rate of the purge gas supplied to the processing chamber 201 and the second buffer chamber 232b does not need to be large.
- Purge can be performed to such an extent that no adverse effects occur.
- the purging time can be shortened and the manufacturing throughput can be improved.
- the consumption of the purge gas can be suppressed to a necessary minimum.
- the temperature of the heater 213 is set to be the same as that at the time of supplying the second processing gas to the wafer 200.
- the supply flow rate of the purge gas supplied from the purge gas supply system is, for example, a flow rate within a range of 100 to 10000 sccm.
- a rare gas such as Ar, He, Ne, or Xe may be used in addition to the N 2 gas, or a combination of these gases may be used.
- the controller 260 determines whether or not the film forming step S301 (S203 to S206) has been performed a predetermined number of cycles n. That is, it is determined whether a film having a desired thickness is formed on the wafer 200.
- the above-described film forming step S301 (S203 to S206) is defined as one cycle, and this cycle is performed at least once, whereby a SiN film having a predetermined thickness can be formed on the wafer 200. Note that the above cycle is preferably repeated a plurality of times. Thus, a SiN film having a predetermined thickness is formed on the wafer 200.
- Step S207 when the film forming step S301 has not been performed a predetermined number of times (No determination), the cycle of the film forming step S301 is repeated, and when the film forming step S301 has been performed a predetermined number of times (Yes determination), the film forming step is performed. Step S301 ends.
- the valves 136a and 136b are opened and the MFCs 135a and 135b are adjusted to supply N 2 gas at a predetermined flow rate so that the processing chamber 201 has a predetermined pressure, and the pressure measured by a predetermined pressure sensor (not shown).
- the pressure regulator 227 is controlled based on the value.
- the power to the heater 213 is controlled so that the processing chamber 201 has a predetermined temperature.
- the pressure of the processing chamber 201 is set to the same pressure as when the gate valve 1490 is opened in the first pressure regulation / temperature regulation step S202, and the temperature of the heater 213 is set to be the temperature at the time of idling. In the case where the next wafer 200 is continuously processed under the same temperature condition, the temperature of the heater 213 may be maintained.
- Substrate unloading step S209 Subsequently, the substrate support 210 is lowered by the elevating mechanism 218 so that the lift pins 207 protrude from the through holes 214 toward the upper surface of the substrate support 210, and the wafer 200 is placed on the lift pins 207.
- the gate valve 1490 is opened, transported to the outside of the transfer chamber 203 through the substrate loading / unloading port 1480 using a transport mechanism (not shown) such as a tweezer, and the gate valve 1490 is closed.
- the substrate processing apparatus 100A of the second embodiment of the present disclosure is different from the substrate processing apparatus 100 of the first embodiment in the configuration of the first plasma unit, but is otherwise the same.
- the first plasma unit will be mainly described.
- a first plasma unit 270c disposed outside the upper container 202a includes a coil electrode 253a having a spiral shape of 7 to 8 turns made of a conductive metal pipe and a conductive metal plate. And a cylindrical electromagnetic wave shield 254a.
- the high-frequency power from the high-frequency power supply 252a is supplied to the matching unit 251a connected to the 1 / 8th to 1/2 turn from the bottom of the coil electrode 253a, and the ground unit connected to the vicinity of both ends of the coil electrode 253a and the electromagnetic wave shield 254a. Supplied via The high-frequency power supplied by the high-frequency power supply 252a sets the wavelength generated by the high-frequency power supply 252a to be substantially the same as the entire length of the coil electrode 253a.
- the location where a strong AC voltage is generated can be kept away from the plasma.
- the acceleration of plasma ions traveling toward the inner wall of the upper container 202a can be suppressed.
- a reaction gas is supplied to the processing chamber 201, the reaction field is induced by an AC magnetic field generated by the coil electrode 253a, and an inductively coupled plasma (Inductively Coupled Plasma) is generated near the first, fourth, and seventh turns from below the coil electrode 253a.
- ICP Inductively Coupled Plasma
- the plasma density can be increased while suppressing the sputtering or etching of the inner wall of the upper container 202a, and the amount of generation of the active species of the reaction gas can be greatly improved.
- a method of supplying a reactant gas after supplying a reactant gas and alternately supplying them to form a film is described.
- the supply order of the reactant gas and the reactant gas may be reversed. It is also possible to apply a method in which the supply timing of the reaction gas and the reaction gas overlap. By changing the supply method in this manner, it is possible to change the film quality and composition ratio of the formed film.
- a silicon nitride film was formed using a DCS gas that is a silicon-containing gas as a source gas and an NH 3 gas that was a nitrogen-containing gas as a reaction gas, but other gases were used.
- the present invention is also applicable to film formation containing oxygen or carbon. Specifically, a silicon oxide film (SiO film), a silicon carbide film (SiC film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon oxynitride film (SiO film), a silicon oxynitride film (SiOCN film), a silicon oxynitride film (SiO film), a silicon oxide film (SiO film), a silicon carbide film (SiC film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon oxynitride film ( The present invention is also suitably applicable
- the source gas in addition to the DCS gas, for example, monochlorosilane (SiH 3 Cl, abbreviation: MCS) gas, trichlorosilane (SiHCl 3 , abbreviation: TCS) gas, tetrachlorosilane, that is, silicon tetrachloride (SiCl 4 , abbreviation: STC) gas, hexachlorodisilane (Si 2 Cl 6 , abbreviated: HCDS) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviated: OCTS) gas and other inorganic halosilane raw material gas, and tetrakisdimethylaminosilane (Si [N ( CH 3 ) 2 ] 4 , abbreviation: 4DMAS) gas, trisdimethylaminosilane (Si [N (CH 3 ) 2 ] 3 H, abbreviation: 3DMAS) gas, bis
- the aminosilane raw material refers to a silane raw material having an amino group, and also a silane raw material having an alkyl group such as a methyl group, an ethyl group, and a butyl group. At least Si, nitrogen (N) and carbon (C ). That is, the aminosilane raw material referred to here can be said to be an organic raw material and an organic aminosilane raw material.
- a nitrogen-containing gas such as a nitrogen gas, a diazene (N 2 H 2 ) gas, a hydrazine (N 2 H 4 ) gas, or an N 3 H 8 gas is preferably used.
- a nitrogen-containing gas such as a nitrogen gas, a diazene (N 2 H 2 ) gas, a hydrazine (N 2 H 4 ) gas, or an N 3 H 8 gas is preferably used.
- an amine-based gas may be used as the other nitrogen-containing gas.
- the amine-based gas is a gas containing an amine group, and is a gas containing at least carbon (C), nitrogen (N), and hydrogen (H).
- the amine-based gas contains an amine such as ethylamine, methylamine, propylamine, isopropylamine, butylamine, and isobutylamine.
- the amine is a general term for a compound in which a hydrogen atom of ammonia (NH 3 ) is substituted with a hydrocarbon group such as an alkyl group. That is, the amine contains a hydrocarbon group such as an alkyl group.
- the amine-based gas can be said to be a silicon-free gas because it does not contain silicon (Si), and can be said to be a silicon- and metal-free gas because it does not contain silicon and metal.
- the amine-based gas include triethylamine ((C 2 H 5 ) 3 N, abbreviation: TEA), diethylamine ((C 2 H 5 ) 2 NH, abbreviation: DEA), monoethylamine (C 2 H 5 NH 2 , Ethylamine-based gas such as MEA), trimethylamine ((CH 3 ) 3 N, abbreviated name: TMA), dimethylamine ((CH 3 ) 2 NH, abbreviated name: DMA), monomethylamine (CH 3 NH 2 , abbreviated name: MMA) ), Tripropylamine ((C 3 H 7 ) 3 N, abbreviation: TPA), dipropylamine ((C 3 H 7 ) 2 NH, abbreviation: DPA),
- the amine-based gas for example, (C 2 H 5 ) x NH 3-x , (CH 3 ) x NH 3-x , (C 3 H 7 ) x NH 3-x , [(CH 3 ) 2 CH] x NH 3-x , (C 4 H 9 ) x NH 3-x , [(CH 3 ) 2 CHCH 2 ] x NH 3-x (where x is an integer of 1 to 3)
- the amine-based gas acts as a nitrogen source (nitrogen source) when forming a SiN film, a SiCN film, a SiOCN film, and the like, and also acts as a carbon source (carbon source).
- nitrogen source nitrogen source
- carbon source carbon source
- an oxidizing agent that is, an oxygen-containing gas acting as an oxygen source
- oxygen (O 2 ) gas water vapor (H 2 O gas), nitrous oxide (N 2 O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO 2 ) gas, ozone (O 3 ) gas
- An oxygen-containing gas such as a hydrogen peroxide (H 2 O 2 ) gas, a water vapor (H 2 O gas), a carbon monoxide (CO) gas, and a carbon dioxide (CO 2 ) gas can be preferably used.
- the present disclosure can be suitably applied to the case of forming a metalloid film containing a metalloid element or a metal film containing a metal element.
- the processing procedure and processing conditions of these film forming processes can be the same processing procedures and processing conditions as those of the film forming processes described in the above-described embodiments and the modifications. In these cases, the same effects as in the above-described embodiment can be obtained.
- the present disclosure describes that titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W) are formed on the wafer 200.
- the present invention can be suitably applied to the case of forming a metal oxide film or a metal nitride film containing a metal element such as.
- the present disclosure relates to a TiO film, TiOC film, TiOCN film, TiON film, TiN film, TiCN film, ZrO film, ZrOC film, ZrOCN film, ZrON film, ZrN film, ZrCN film, HfO film, HfOC film, HfOCN film, HfON film, HfN film, HfCN film, TaO film, TaOC film, TaOCN film, TaON film, TaN film, TaCN film, NbO film, NbOC film, NbOCN film, NbON film, NbN film, NbCN film , AlO film, AlOC film, AlOCN film, AlON film, AlN film, AlCN film, MoO film, MoOC film, MoOCN film, MoON film, MoN film, MoCN film, WO film, WOC film, WOCN film, WON film, WN
- a WCN film, or the like it can be suitably applied.
- tetrakis (dimethylamino) titanium (Ti [N (CH 3 ) 2 ] 4 abbreviated to TDMAT) gas and tetrakis (ethylmethylamino) hafnium (Hf [N (C 2 H 5) ) (CH 3 )] 4
- abbreviation: TEMAH tetrakis (ethylmethylamino) zirconium (Zr [N (C 2 H 5 ) (CH 3 )] 4
- TEMAZ trimethylaluminum
- Al (CH) 3 ) 3 abbreviation: TMA
- TiCl 4 titanium tetrachloride
- HfCl 4 hafnium tetrachloride
- the film forming process is described, but the present invention can be applied to other processes.
- the present disclosure can be applied to a case where a plasma oxidation treatment, a plasma nitridation treatment, or a plasma modification treatment is performed on a substrate surface or a film formed on a substrate using only a reaction gas.
- the present invention can be applied to plasma annealing using only a reaction gas.
- the manufacturing process of the semiconductor device is described, but the disclosure according to the embodiment is applicable to processes other than the manufacturing process of the semiconductor device.
- substrate processing such as a liquid crystal device manufacturing step, a solar cell manufacturing step, a light emitting device manufacturing step, a glass substrate processing step, a ceramic substrate processing step, and a conductive substrate processing step.
- the present invention is not limited to this, and may be an apparatus in which a plurality of substrates are arranged in a horizontal direction or a vertical direction.
- recipes used for the film forming process are individually prepared according to the processing contents, and stored in the storage device 260c via an electric communication line or the external storage device 262. Then, when starting various processes, it is preferable that the CPU 260a appropriately select an appropriate recipe from a plurality of recipes stored in the storage device 260c according to the content of the process.
- a single substrate processing apparatus can form thin films of various film types, composition ratios, film qualities, and film thicknesses in a general-purpose manner and with good reproducibility. Further, the burden on the operator can be reduced, and various processes can be started quickly while avoiding operation errors.
- the above-described recipe is not limited to the case where the recipe is newly created, and may be prepared by, for example, changing an existing recipe already installed in the substrate processing apparatus.
- the changed recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe is recorded.
- the input / output device 261 provided in the existing substrate processing apparatus may be operated to directly change the existing recipe already installed in the substrate processing apparatus.
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Abstract
Description
以下、本開示の第一実施形態を図面に即して説明する。
まず、本開示の第一実施形態に係る基板処理装置について説明する。
下部容器202bの側部には、処理室201および移載室203の雰囲気を排気する排気口221が設けられている。排気口221には排気管224が接続されており、排気管224には、処理室201を所定の圧力に制御するAPC(Auto Pressure Controller)等の圧力調整器227と真空ポンプ223が順に直列に接続されている。
仕切り板204の側部には、処理室201に各種ガスを供給するための第1ガス導入口241aが設けられている。また、処理室201の上部に、処理室201に各種ガスを供給するための第2ガス導入口241bが設けられている。第1ガス供給部である第1ガス導入口241aおよび第2ガス供給部である第2ガス導入口241bに接続される各ガス供給ユニットの構成については後述する。
ガスを分散させる機構としての第1ガス分散ユニット235aは、第1バッファ室232aと複数の第1分散孔234aから成なるリング状の形状を有し、仕切り板204と隣接配置されている。同様に、第2ガス分散ユニット235bは、第2バッファ室232bと複数の第2分散孔234bから成るリング状の形状を有し、蓋231と後述の第2プラズマユニット270bの間に配置されている。第1ガス導入口241aから導入される第1ガスは、第1ガス分散ユニット235aの第1バッファ室232aに供給され、複数の第1分散孔234aを介して処理室201に供給される。第2ガス導入口241bから導入される第2ガスは、第2ガス分散ユニット235bの第2バッファ室232bに供給され、複数の第2分散孔234bを介して処理室201に供給される。
上部容器202aの外周に巻き回すように配置された第1プラズマユニット270aは、導電性の金属パイプから成る1巻から10巻のスパイラル形状のコイル電極(コイル)253aと、導電性の金属板により構成される円筒体形状の電磁波シールド254aで構成されている。高周波電源252aからの高周波電力は、コイル電極253aの両端に並行接続された整合器251aと、コイル電極253aの中間付近と電磁波シールド254aが接続された接地部を介して供給される。処理室201に反応ガスを供給すると、コイル電極253aが作る交流磁場に誘導されて、誘導結合プラズマ(Inductively Coupled Plasma、略称:ICP)が生成される。永久磁石255は、プラズマ生成の補助として、必要に応じてコイル電極253aの上下に導入することができる。この場合、永久磁石255が作る直流磁場Bは、コイル電極253aが誘導して作るプラズマ電流Jと作用して生じるJxBドリフトモードのプラズマや、コイル電極253aから発生する交流電場Eと作用して生じるExBドリフトモードのプラズマが生成される。これらにより、プラズマ密度が高まり、反応ガスの活性種の生成量を大幅に向上させることができる。なお、コイル電極253aの代わりに平板電極を用いた容量結合プラズマ(Capactively Coupled Plasma、略称:CCP)を採用することもできるが、永久磁石255の磁場と作用して生じるプラズマはExBドリフトモードのみとなる。第1プラズマユニット270aに、プラズマ生成の補助として、永久磁石255が設けられることにより、プラズマ電子が永久磁石255の磁場に補足(トラップ)されるため、処理室201の側面でのプラズマ電子の失活(消滅)率が下がる。その結果、プラズマの生成効率が上がる。
上部容器202a上部に配置されかつ処理室201の内側に一部突き出した第2プラズマユニット270bは、台座272に固定された絶縁部材271で保護された導電性の金属パイプから成るU字形状のコイル電極(単にコイルとも呼ぶ。)253bと、導電性の金属板により構成される円筒体または直方体の形状の電磁波シールド254bで構成されている。絶縁部材271は絶縁材料で構成され、処理室201の上部の内部に吐出するように設けられている。コイル電極253bは絶縁部材271に沿うように設けられている。なお、絶縁部材271は突き出し部に丸みのある直方体形状、円筒体形状やパイプ形状を用い、その内外の雰囲気は真空シールで隔絶されている。高周波電源252bからの高周波電力は、コイル電極253bの一端と接続された整合器251bと、コイル電極253bのもう一端と電磁波シールド254bが接続された接地部を介して供給される。処理室201に反応ガスを供給すると、コイル電極253bが作る交流磁場に誘導されて、誘導結合プラズマ(Inductively Coupled Plasma、略称:ICP)が生成される。なお、第2プラズマユニット270bの代わりに、リモートプラズマユニットを採用しても良い。
第1ガス導入口241aには、第1ガス供給管150aが接続されている。第1ガス供給管150aには、第1処理ガス供給管113とパージガス供給管133aが接続されており、第1ガス導入口241aには、後述の第1処理ガスとパージガスが供給される。第2ガス導入口241bには、第2ガス供給管150bが接続されている。第2ガス供給管150bには、第2処理ガス供給管123とパージガス供給管133bが接続されており、第2ガス導入口241bには、後述の第2処理ガスとパージガスが供給される。
第1処理ガス供給系には、第1処理ガス供給管113、マスフロ―コントローラ(MFC)115、バルブ116が設けられている。なお、第1処理ガス源を第1処理ガス供給系に含めて構成しても良い。また、処理ガスの原料が液体、固体の場合には、気化器が設けられていても良い。
第2処理ガス供給系には、第2処理ガス供給管123、MFC125、バルブ126が設けられている。なお、第2処理ガス源を第2処理ガス供給系に含めて構成しても良い。
パージガス供給系には、パージガス供給管133aとMFC135aとバルブ136aから成る系統と、パージガス供給管133bとMFC135bとバルブ136bから成る系統の2系統が設けられている。なお、パージガス源をパージガス供給系に含めて構成しても良い。
図1に示すように基板処理装置100は、基板処理装置100の各部の動作を制御するコントローラ260を有している。
次に、上述の基板処理装置100を用いて半導体装置(半導体デバイス)の製造工程の一工程として、基板上に絶縁膜であって、例えば窒化膜としてのシリコン窒化(SiN)膜を形成するフローとシーケンス例について図3と図4を参照して説明する。なお、以下の説明において、基板処理装置100を構成する各部の動作はコントローラ260により制御される。
成膜処理に際しては、先ず、ウエハ200を処理室201に搬入させる。具体的には、基板支持部210を昇降機構218によって下降させ、リフトピン207が貫通孔214から基板支持部210の上面側に突出させた状態にする。また、処理室201や移載室203を所定の圧力に調圧した後、ゲートバルブ1490を開放し、ツイーザなどの搬送機構(不図示)を用いて、基板搬入出口1480を通ってウエハ200をリフトピン207上に載置させる。ウエハ200をリフトピン207上に載置させた後、ゲートバルブ1490を閉じ、昇降機構218によって基板支持部210を所定の位置まで上昇させることによって、ウエハ200が、リフトピン207から基板支持部210へ載置されるようになる。
続いて、処理室201が所定の圧力となるように、バルブ136a, 136bを開き、MFC135a,135bを調節して所定の流量にてN2ガスを供給し、排気口221を介して処理室201の雰囲気を排気する。この際、圧力センサ(不図示)が計測した圧力値に基づき、圧力調整器227の弁の開度をフィードバック制御する。また、温度センサ(不図示)が検出した温度値に基づき、処理室201が所定の温度となるようにヒータ213への電力をフィードバック制御する。具体的には、基板支持部210をヒータ213により予め加熱しておき、ウエハ200又は基板支持部210の温度が安定してから一定時間置く。この間、処理室201に残留している水分あるいは部材からの脱ガス等が有る場合は、N2ガスなどによるパージがそれらの除去に効果的である。これで成膜プロセス前の準備が完了することになる。なお、処理室201を所定の圧力に設定する前に、一度、到達可能な真空度まで真空排気しても良い。
続いて、ウエハ200上にSiN膜を形成する例について説明する。成膜工程S301の詳細について、図3、図4を用いて説明する。
第1処理ガス供給工程S203では、第1処理ガス供給系から処理室201に第1処理ガス(原料ガス)としてのジクロロシラン(SiH2Cl2,dichlorosilane:DCS)ガスを供給する。具体的には、バルブ116を開けて、処理ガス供給源から供給された第1処理ガスをMFC115で流量調整した後、基板処理装置100に供給する。流量調整された第1処理ガスは、第1ガス分散ユニット235aの第1バッファ室232aを通り、複数の第1分散孔234aから、減圧状態の処理室201に供給される。また、排気系による処理室201の排気を継続し、処理室201の圧力を所定の圧力範囲(第1圧力)となるように圧力調整器227を制御する。このとき、所定の圧力(第1圧力:例えば100Pa以上10kPa以下)で、処理室201に第1処理ガスを供給する。このようにして、第1処理ガスが供給されることにより、ウエハ200上に、シリコン含有層が形成される。ここでのシリコン含有層とは、シリコン(Si)または、シリコンと塩素(Cl)を含む層である。
第1パージ工程S204では、ウエハ200上にシリコン含有層が形成された後、第1処理ガス供給管113のバルブ116を閉じ、第1処理ガスの供給を停止する。真空ポンプ223の動作を継続し、第1処理ガスを停止することで、処理室201に存在する第1処理ガスや反応副生成物質などの残留ガス、第1バッファ室232aに残留する処理ガスを真空ポンプ223から排気されることによりパージが行われる。
第2処理ガス供給工程S205では、第2処理ガス供給系のバルブ126を開け、第2ガス分散ユニット235bの第2バッファ室232bと複数の第2分散孔234bを介して、減圧下の処理室201に第2処理ガス(第1の処理ガスとは化学構造(分子構造)が異なる第2の処理ガスとしての反応ガス)としてアンモニア(NH3)ガスを供給する。このとき、排気系による処理室201の排気を継続して第2処理ガスが所定流量となるようにMFC125を(例えば、100sccm以上5000sccm以下に)調整し、処理室201が所定圧力になるように圧力調整器227を(第2圧力:例えば、1Pa以上200Pa以下に)制御する。
第2パージ工程S206では、ウエハ200上に窒素含有層が形成された後、第2処理ガス供給管123のバルブ126を閉じ、第2処理ガスの供給を停止する。真空ポンプ223の動作を継続し、第2処理ガスを停止することで、処理室201に存在する第2処理ガスや反応副生成物質などの残留ガス、第2バッファ室232bに残留する処理ガスを真空ポンプ223から排気されることによりパージが行われる。
パージ工程S206の終了後、コントローラ260は、上記の成膜工程S301(S203~S206)が所定のサイクル数nが実行されたか否かを判定する。即ち、ウエハ200上に所望の厚さの膜が形成されたか否かを判定する。上述した成膜工程S301(S203~S206)を1サイクルとして、このサイクルを少なくとも1回以上行うことにより、ウエハ200上に所定膜厚のSiN膜を形成することができる。なお、上述のサイクルは、複数回繰返すことが好ましい。これにより、ウエハ200上に所定膜厚のSiN膜が形成される。
処理室201が所定の圧力となるように、バルブ136a,136bを開き、MFC135a,135bを調節して所定の流量にてN2ガスを供給し、所定の圧力センサ(不図示)が計測した圧力値に基づき、圧力調整器227を制御する。また、温度センサ(不図示)が検出した温度値に基づき、処理室201が所定の温度となるようにヒータ213への電力を制御する。例えば、処理室201の圧力は、第1調圧・調温工程S202のゲートバルブ1490の開放時と同じ圧力に設定し、ヒータ213の温度は、アイドル時の温度になるように設定する。なお、同温度条件にて次のウエハ200を連続処理する場合は、ヒータ213の温度を維持してもよい。
続いて、基板支持部210を昇降機構218によって下降させ、リフトピン207が貫通孔214から基板支持部210の上面側に突出させ、ウエハ200をリフトピン207上に載置させた状態にする。ゲートバルブ1490を開放し、ツイーザなどの搬送機構(不図示)を用いて、基板搬入出口1480を通って移載室203外へ搬送し、ゲートバルブ1490を閉じる。
以下、本開示の第二実施形態を図面に即して説明する。
Claims (12)
- 基板を処理する処理室と、
前記処理室内に対して処理ガスを供給するガス供給系と、
前記処理室の外周に巻き回すように設けられ、前記処理室内で前記処理ガスのプラズマを生成する第1プラズマユニットと、
前記処理室の上部であって内部に突出するように設けられ、前記処理室内で前記処理ガスのプラズマを生成する第2プラズマユニットと、
を有する基板処理装置。 - 前記第2プラズマユニットは、前記処理室の上部の内部に突出するように設けられる絶縁部材と、前記絶縁部材に沿うように設けられるコイルと、を有する請求項1に記載の基板処理装置。
- 前記第2プラズマユニットは、導電性の金属板により構成される円筒体または直方体の形状の電磁波シールドによりシールドされる請求項1記載の基板処理装置。
- 前記第2プラズマユニットに設けられる前記コイルは、前記絶縁部材で保護された導電性のU字形状である請求項2に記載の基板処理装置。
- 高周波電源から前記第2プラズマユニットに供給される高周波電力は、コイルの一端と接続された整合器と、前記コイルの他端と前記電磁波シールドが接続された接地部を介して前記コイルに供給される請求項3に記載の基板処理装置。
- 前記第1プラズマユニットは、導電性のスパイラル形状のコイルと、導電性の円筒体形状の電磁波シールドで構成される請求項1に記載の基板処理装置。
- 前記導電性のスパイラス形状のコイルは、一端から他端までの間の所定位置の前記コイルの巻径が他の位置の前記コイルの巻径と異なるように形成されるコイルである請求項6に記載の基板処理装置。
- 高周波電源から前記第1プラズマユニットに供給される高周波電力は、前記コイルの両端に接続される整合器と、前記コイルの中間付近と前記電磁波シールドが接続される接地部を介して前記コイルに供給される請求項6に記載の基板処理装置。
- 前記第1プラズマユニットに永久磁石が設けられている請求項1に記載の基板処理装置。
- 前記永久磁石は、前記第1プラズマユニットに設けられるコイルの上下に設けられる請求項9に記載の基板処理装置。
- 基板を処理する処理室と、前記処理室内に対して処理ガスを供給するガス供給系と、前記処理室の外周に巻き回すように設けられ、前記処理室内で前記処理ガスのプラズマを生成する第1プラズマユニットと、前記処理室の上部であって内部に突出するように設けられ、前記処理室内で前記処理ガスのプラズマを生成する第2プラズマユニットと、を有する基板処理装置の前記処理室内に前記基板を搬入する工程と、
前記処理室内に前記処理ガスを供給する工程と、
前記処理室内の前記基板上に前記第1プラズマユニットおよび前記第2プラズマユニットにより前記処理ガスのプラズマを生成する工程と、
前記処理室から前記基板を搬出する工程と、
を有する半導体装置の製造方法。 - 基板を処理する処理室と、前記処理室内に対して処理ガスを供給するガス供給系と、前記処理室の外周に巻き回すように設けられ、前記処理室内で前記処理ガスのプラズマを生成する第1プラズマユニットと、前記処理室の上部であって内部に突出するように設けられ、前記処理室内で前記処理ガスのプラズマを生成する第2プラズマユニットと、を有する基板処理装置の前記処理室内に前記基板を搬入する手順と、
前記処理室内に前記処理ガスを供給する手順と、
前記処理室内の前記基板上に前記第1プラズマユニットおよび前記第2プラズマユニットにより前記処理ガスのプラズマを生成する手順と、
前記処理室から前記基板を搬出する手順と、
をコンピュータを用いて前記基板処理装置に実行させるプログラム。
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JP2020547917A JP7030204B2 (ja) | 2018-09-20 | 2019-03-11 | 基板処理装置、半導体装置の製造方法、基板処理方法およびプログラム |
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