JP2011512552A5 - - Google Patents
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- JP2011512552A5 JP2011512552A5 JP2010545213A JP2010545213A JP2011512552A5 JP 2011512552 A5 JP2011512552 A5 JP 2011512552A5 JP 2010545213 A JP2010545213 A JP 2010545213A JP 2010545213 A JP2010545213 A JP 2010545213A JP 2011512552 A5 JP2011512552 A5 JP 2011512552A5
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- JP
- Japan
- Prior art keywords
- substituted
- composition
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- unsubstituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 claims description 90
- 150000007514 bases Chemical class 0.000 claims description 40
- 125000003118 aryl group Chemical group 0.000 claims description 22
- -1 R 31 Chemical compound 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 9
- 239000002318 adhesion promoter Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 150000003512 tertiary amines Chemical class 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 125000003107 substituted aryl group Chemical group 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 8
- 229910052799 carbon Inorganic materials 0.000 claims 8
- 125000004430 oxygen atom Chemical group O* 0.000 claims 8
- 125000000217 alkyl group Chemical group 0.000 claims 7
- 229910052717 sulfur Inorganic materials 0.000 claims 6
- 125000004434 sulfur atom Chemical group 0.000 claims 6
- 125000004103 aminoalkyl group Chemical group 0.000 claims 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 4
- 125000000623 heterocyclic group Chemical group 0.000 claims 4
- 125000001453 quaternary ammonium group Chemical group 0.000 claims 4
- 150000003335 secondary amines Chemical class 0.000 claims 4
- 238000006467 substitution reaction Methods 0.000 claims 4
- 125000001931 aliphatic group Chemical group 0.000 claims 3
- 125000004122 cyclic group Chemical group 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- 125000001424 substituent group Chemical group 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 125000004036 acetal group Chemical group 0.000 claims 2
- 125000005587 carbonate group Chemical group 0.000 claims 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
- 125000004185 ester group Chemical group 0.000 claims 2
- 125000001033 ether group Chemical group 0.000 claims 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims 2
- 125000001302 tertiary amino group Chemical group 0.000 claims 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 2
- 229920002554 vinyl polymer Polymers 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 150000001334 alicyclic compounds Chemical group 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 125000005708 carbonyloxy group Chemical group [*:2]OC([*:1])=O 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims 1
- 229920003023 plastic Polymers 0.000 claims 1
- 229920002577 polybenzoxazole Polymers 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 230000003381 solubilizing effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 5
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 5
- 238000009472 formulation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000008199 coating composition Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2607508P | 2008-02-04 | 2008-02-04 | |
| US61/026,075 | 2008-02-04 | ||
| PCT/US2009/032675 WO2009099954A1 (en) | 2008-02-04 | 2009-01-30 | Novel positive photosensitive resin compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011512552A JP2011512552A (ja) | 2011-04-21 |
| JP2011512552A5 true JP2011512552A5 (https=) | 2013-12-26 |
| JP5518743B2 JP5518743B2 (ja) | 2014-06-11 |
Family
ID=40931973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010545213A Active JP5518743B2 (ja) | 2008-02-04 | 2009-01-30 | 新規なポジ型感光性樹脂組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9519216B2 (https=) |
| JP (1) | JP5518743B2 (https=) |
| TW (1) | TWI471361B (https=) |
| WO (1) | WO2009099954A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100932765B1 (ko) * | 2008-02-28 | 2009-12-21 | 한양대학교 산학협력단 | 폴리이미드-폴리벤조옥사졸 공중합체, 이의 제조방법, 및이를 포함하는 기체 분리막 |
| CA2640517A1 (en) * | 2008-05-19 | 2009-11-19 | Industry-University Cooperation Foundation, Hanyang University | Polyamic acids dope composition, preparation method of hollow fiber using the same and hollow fiber prepared therefrom |
| US8013103B2 (en) * | 2008-10-10 | 2011-09-06 | Industry-University Cooperation Foundation, Hanyang University | Polymer compounds and a preparation method thereof |
| US8487064B2 (en) | 2008-10-10 | 2013-07-16 | Industry-University Cooperation Foundation, Hanyang University | Polymer compounds and a preparation method thereof |
| JP2011186432A (ja) * | 2009-12-15 | 2011-09-22 | Rohm & Haas Electronic Materials Llc | フォトレジストおよびその使用方法 |
| JP5937104B2 (ja) | 2010-12-29 | 2016-06-22 | プロメラス， エルエルシー | 仮接着のためのポリマー組成物 |
| JP5745338B2 (ja) * | 2011-05-24 | 2015-07-08 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
| KR101413078B1 (ko) * | 2011-12-30 | 2014-07-02 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물 |
| JP6260531B2 (ja) * | 2012-05-17 | 2018-01-17 | Jsr株式会社 | 酸拡散制御剤、感放射線性樹脂組成物及びレジストパターン形成方法 |
| CN105814488B (zh) | 2013-12-11 | 2019-11-05 | 富士胶片株式会社 | 感光性树脂组合物、固化膜的制造方法、固化膜、液晶显示装置及有机el显示装置 |
| JPWO2015087830A1 (ja) * | 2013-12-11 | 2017-03-16 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置および有機ｅｌ表示装置 |
| TWI627502B (zh) * | 2014-09-04 | 2018-06-21 | Fujifilm Corp | 感光性樹脂組成物、硬化膜的製造方法、硬化膜、液晶顯示裝置、有機電激發光顯示裝置及觸控面板 |
| CN106796399B (zh) * | 2014-10-02 | 2021-01-22 | 艾曲迪微系统股份有限公司 | 正型感光性树脂组合物、图案固化膜的制造方法、固化物、层间绝缘膜、覆盖涂层、表面保护膜和电子部件 |
| CN106687864B (zh) * | 2014-11-26 | 2020-07-03 | 日立化成株式会社 | 感光性树脂组合物、感光性元件、固化物、半导体装置、抗蚀图案的形成方法及电路基材的制造方法 |
| JP6349335B2 (ja) * | 2015-04-28 | 2018-06-27 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネル |
| WO2017151160A1 (en) * | 2016-03-01 | 2017-09-08 | Fujifilm Electronic Materials U.S.A., Inc. | Dry film structure |
| TW202122468A (zh) * | 2019-11-21 | 2021-06-16 | 日商富士軟片股份有限公司 | 硬化性樹脂組成物、硬化性樹脂組成物的製造方法、硬化膜、積層體、硬化膜的製造方法及半導體元件 |
| CN115280188A (zh) | 2020-01-16 | 2022-11-01 | 富士胶片电子材料美国有限公司 | 干膜 |
| JP2023534634A (ja) | 2020-07-02 | 2023-08-10 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | 誘電体膜形成組成物 |
| TWI776586B (zh) * | 2021-07-09 | 2022-09-01 | 律勝科技股份有限公司 | 聚苯并噁唑前驅物及其應用 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2931297A1 (de) * | 1979-08-01 | 1981-02-19 | Siemens Ag | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
| DE3021748A1 (de) * | 1980-06-10 | 1981-12-17 | Siemens AG, 1000 Berlin und 8000 München | Strahlungsreaktive vorstufen hochwaermebestaendiger polymerer |
| DE3411659A1 (de) * | 1984-03-29 | 1985-10-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von polyoxazol- und polythiazol-vorstufen |
| US4992596A (en) * | 1988-12-27 | 1991-02-12 | Olin Hunt Specialty Products Inc. | Selected trinuclear novolak oligomers and their use in photoactive compounds and radiation sensitive mixtures |
| EP0391196A3 (de) * | 1989-04-06 | 1991-02-27 | Siemens Aktiengesellschaft | Herstellung von Hydroxypolyamiden |
| JP3030672B2 (ja) * | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
| US5296330A (en) * | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive |
| US5357320A (en) * | 1992-09-04 | 1994-10-18 | Canon Kabushiki Kaisha | Electrophotographic apparatus |
| EP0659781A3 (de) * | 1993-12-21 | 1995-09-27 | Ciba Geigy Ag | Maleinimidcopolymere, insbesonder für Photoresists. |
| TW397936B (en) * | 1994-12-09 | 2000-07-11 | Shinetsu Chemical Co | Positive resist comosition based on a silicone polymer containing a photo acid generator |
| US5541033A (en) * | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
| US5554664A (en) * | 1995-03-06 | 1996-09-10 | Minnesota Mining And Manufacturing Company | Energy-activatable salts with fluorocarbon anions |
| US5879856A (en) * | 1995-12-05 | 1999-03-09 | Shipley Company, L.L.C. | Chemically amplified positive photoresists |
| US6040107A (en) * | 1998-02-06 | 2000-03-21 | Olin Microelectronic Chemicals, Inc. | Photosensitive diazonaphthoquinone esters based on selected cyclic alkyl ether-containing phenolics and their use in radiation sensitive mixtures |
| US6159653A (en) * | 1998-04-14 | 2000-12-12 | Arch Specialty Chemicals, Inc. | Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations |
| US6143467A (en) * | 1998-10-01 | 2000-11-07 | Arch Specialty Chemicals, Inc. | Photosensitive polybenzoxazole precursor compositions |
| US6852466B2 (en) * | 1998-12-23 | 2005-02-08 | Shipley Company, L.L.C. | Photoresist compositions particularly suitable for short wavelength imaging |
| US7192681B2 (en) * | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| US7244549B2 (en) * | 2001-08-24 | 2007-07-17 | Jsr Corporation | Pattern forming method and bilayer film |
| JP4430670B2 (ja) * | 2003-06-05 | 2010-03-10 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | 新規なポジ型感光性樹脂組成物 |
| WO2005042247A1 (ja) | 2003-10-31 | 2005-05-12 | Jsr Corporation | 積層体およびその形成方法、絶縁膜、半導体装置、ならびに膜形成用組成物 |
| EP1861749A4 (en) * | 2005-03-25 | 2010-10-06 | Fujifilm Electronic Materials | NEW PHOTOSENSITIVE RESIN COMPOSITIONS |
| US7803510B2 (en) * | 2005-08-17 | 2010-09-28 | Fujifilm Electronic Materials U.S.A., Inc. | Positive photosensitive polybenzoxazole precursor compositions |
| JP4524234B2 (ja) * | 2005-09-26 | 2010-08-11 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP4646068B2 (ja) * | 2005-09-30 | 2011-03-09 | 国立大学法人東京工業大学 | ポジ型感光性樹脂組成物、その製造方法、及びレリーフパターンの形成方法 |
| JP4659614B2 (ja) * | 2005-12-28 | 2011-03-30 | 富士フイルム株式会社 | 感光性樹脂組成物及びそれを用いた半導体装置の製造方法 |
| TWI477909B (zh) * | 2006-01-24 | 2015-03-21 | Fujifilm Corp | 正型感光性組成物及使用它之圖案形成方法 |
| KR101348607B1 (ko) * | 2006-02-14 | 2014-01-07 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 및 이를 이용한 박막 패터닝 방법과 이를 이용한 액정 표시 패널의 제조 방법 |
| JP4911454B2 (ja) * | 2006-09-19 | 2012-04-04 | 富士フイルム株式会社 | ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法 |
-
2009
- 2009-01-30 WO PCT/US2009/032675 patent/WO2009099954A1/en not_active Ceased
- 2009-01-30 US US12/363,492 patent/US9519216B2/en active Active
- 2009-01-30 JP JP2010545213A patent/JP5518743B2/ja active Active
- 2009-02-03 TW TW98103389A patent/TWI471361B/zh active
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