JP2011511470A - 多層透明導電層を備えた太陽電池及びその製造方法 - Google Patents
多層透明導電層を備えた太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000001301 oxygen Substances 0.000 claims abstract description 57
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000031700 light absorption Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- -1 ITO) Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 213
- 230000005540 biological transmission Effects 0.000 description 16
- 238000002834 transmittance Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 230000009102 absorption Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010076 replication Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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Abstract
【選択図】図1
Description
Claims (15)
- 基板、透明導電層、及び光電変換層を含む太陽電池であって、
前記透明導電層は、
第1の光吸収係数を有する第1層と、
前記第1層の上に形成され、前記第1の光吸収係数より高い第2の光吸収係数を有する第2層と、
を含むことを特徴とする太陽電池。 - 前記第1層の酸素含有量は、前記第2層の酸素含有量より相対的に高いことを特徴とする請求項1に記載の太陽電池。
- 前記第1層と第2層の酸素含有量は、前記基板からの距離が遠くなるにつれて減少することを特徴とする請求項1に記載の太陽電池。
- 前記第1層の結晶度が前記第2層の結晶度より相対的に高いことを特徴とする請求項1に記載の太陽電池。
- 前記第1層と第2層の屈折率は互いに異なることを特徴とする請求項1に記載の太陽電池。
- 前記第1層の光学的バンドギャップエネルギーは、前記第2層のバンドギャップエネルギーより相対的に低いことを特徴とする請求項1に記載の太陽電池。
- 前記第1層の比抵抗は、前記第2層の比抵抗より相対的に高いことを特徴とする請求項1に記載の太陽電池。
- 前記透明導電層は、
酸化亜鉛(ZnO)系物質、酸化スズ(SnO2)、及び酸化インジウムスズ(In2O3:SnO2、ITO)のうちから選択されたいずれか1つの物質、またはこれらの物質にアルミニウム(Al)、ガリウム(Ga)、フッ素(F)、ゲルマニウム(Ge)、マグネシウム(Mg)、ボロン(B)、インジウム(In)、スズ(Sn)、リチウム(Li)のうちから選択された少なくとも1つの物質がドーピングされたことを特徴とする請求項1に記載の太陽電池。 - 基板、透明導電層、及び光電変換層を含む太陽電池であって、
前記透明導電層は、
光が入射される面の光吸収係数より前記光電変換層に隣接した面の光吸収係数がより高いことを特徴とする太陽電池。 - 前記光が入射される面の酸素濃度が前記光電変換層に隣接した面の酸素濃度より高いことを特徴とする請求項9に記載の太陽電池。
- 前記透明導電層は、同一な層で酸素濃度を減少させたことを特徴とする請求項9に記載の太陽電池。
- 基板、透明導電層、及び光電変換層を含む太陽電池の製造方法であって、
前記基板の上に、前記基板からの距離が遠くなるにつれて酸素含有量が減少する透明導電層を蒸着するステップを含むことを特徴とする太陽電池の製造方法。 - 前記透明導電層は、蒸着時に流入されるガスのうち、酸素の体積分率を徐々に減少しながら蒸着することを特徴とする請求項12に記載の太陽電池の製造方法。
- 基板、透明導電層、及び光電変換層を含む太陽電池の製造方法であって、
前記透明導電層を形成するために、基板の上に酸素が含まれたガス雰囲気下で第1層を蒸着するステップと、
前記第1の層の蒸着ステップに使われた酸素の濃度より低い濃度の酸素が含まれたガス雰囲気下で前記第1層の上に第2層を蒸着するステップを含むことを特徴とする太陽電池の製造方法。 - 前記透明導電層は、酸化亜鉛(ZnO)系物質、酸化スズ(SnO2)、及び酸化インジウムスズ(In2O3:SnO2、ITO)のうちから選択されたいずれか1つの物質、またはこれらの物質にアルミニウム(Al)、ガリウム(Ga)、フッ素(F)、ゲルマニウム(Ge)、マグネシウム(Mg)、ボロン(B)、インジウム(In)、スズ(Sn)、リチウム(Li)のうちから選択された少なくとも1つの物質がドーピングされたことを特徴とする請求項12乃至請求項14のうち、いずれか1つに記載の太陽電池の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080011157A KR101000057B1 (ko) | 2008-02-04 | 2008-02-04 | 다층 투명전도층을 구비한 태양전지 이의 제조방법 |
PCT/KR2009/000506 WO2009099282A2 (en) | 2008-02-04 | 2009-02-02 | Solar cell having multiple transparent conductive layers and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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JP2011511470A true JP2011511470A (ja) | 2011-04-07 |
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JP2010545806A Pending JP2011511470A (ja) | 2008-02-04 | 2009-02-02 | 多層透明導電層を備えた太陽電池及びその製造方法 |
Country Status (6)
Country | Link |
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US (1) | US9209326B2 (ja) |
EP (1) | EP2238627A4 (ja) |
JP (1) | JP2011511470A (ja) |
KR (1) | KR101000057B1 (ja) |
CN (1) | CN101933159B (ja) |
WO (1) | WO2009099282A2 (ja) |
Cited By (4)
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KR101178496B1 (ko) | 2011-09-28 | 2012-09-07 | 한국에너지기술연구원 | 이중구조의 투명전도막 및 그 제조방법 |
JP2013533637A (ja) * | 2010-07-30 | 2013-08-22 | エルジー イノテック カンパニー リミテッド | 太陽光発電装置及びその製造方法 |
JP2014130825A (ja) * | 2014-02-04 | 2014-07-10 | Nitto Denko Corp | 導電性積層体、パターン配線付き透明導電性積層体、および光学デバイス。 |
US9674946B2 (en) | 2011-06-17 | 2017-06-06 | Nitto Denko Corporation | Conductive laminate, transparent conductive laminate with patterned wiring, and optical device |
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TWI381537B (zh) * | 2009-05-13 | 2013-01-01 | Ind Tech Res Inst | 太陽能電池裝置及其製造方法 |
JP2011009494A (ja) | 2009-06-26 | 2011-01-13 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
WO2011047186A2 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | Method and apparatus for improving photovoltaic efficiency |
TWI440193B (zh) * | 2009-10-20 | 2014-06-01 | Ind Tech Res Inst | 太陽能電池裝置 |
KR101127910B1 (ko) * | 2009-11-25 | 2012-03-21 | 삼성코닝정밀소재 주식회사 | 염료감응형 태양전지용 전극기판과 이를 구비하는 태양전지 및 그 제조방법 |
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US20140076392A1 (en) * | 2012-09-18 | 2014-03-20 | Tsmc Solar Ltd. | Solar cell |
US10270010B2 (en) | 2014-01-28 | 2019-04-23 | Kaneka Corporation | Substrate with transparent electrode and method for producing same |
CN108447993A (zh) * | 2018-03-19 | 2018-08-24 | 吉林大学 | 一种光学间隔层倒置聚合物太阳能电池 |
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2008
- 2008-02-04 KR KR1020080011157A patent/KR101000057B1/ko not_active IP Right Cessation
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2009
- 2009-02-02 EP EP09708789.4A patent/EP2238627A4/en not_active Withdrawn
- 2009-02-02 WO PCT/KR2009/000506 patent/WO2009099282A2/en active Application Filing
- 2009-02-02 CN CN2009801040342A patent/CN101933159B/zh not_active Expired - Fee Related
- 2009-02-02 JP JP2010545806A patent/JP2011511470A/ja active Pending
- 2009-02-04 US US12/365,463 patent/US9209326B2/en active Active
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013533637A (ja) * | 2010-07-30 | 2013-08-22 | エルジー イノテック カンパニー リミテッド | 太陽光発電装置及びその製造方法 |
US9871159B2 (en) | 2010-07-30 | 2018-01-16 | Lg Innotek Co., Ltd. | Apparatus for generating electricity using solar power and method for manufacturing same |
US9674946B2 (en) | 2011-06-17 | 2017-06-06 | Nitto Denko Corporation | Conductive laminate, transparent conductive laminate with patterned wiring, and optical device |
KR101178496B1 (ko) | 2011-09-28 | 2012-09-07 | 한국에너지기술연구원 | 이중구조의 투명전도막 및 그 제조방법 |
WO2013048006A2 (ko) * | 2011-09-28 | 2013-04-04 | 한국에너지기술연구원 | 이중구조의 투명전도막 및 그 제조방법 |
WO2013048006A3 (ko) * | 2011-09-28 | 2013-05-23 | 한국에너지기술연구원 | 이중구조의 투명전도막 및 그 제조방법 |
JP2014130825A (ja) * | 2014-02-04 | 2014-07-10 | Nitto Denko Corp | 導電性積層体、パターン配線付き透明導電性積層体、および光学デバイス。 |
Also Published As
Publication number | Publication date |
---|---|
EP2238627A2 (en) | 2010-10-13 |
CN101933159B (zh) | 2013-04-24 |
WO2009099282A3 (en) | 2009-11-05 |
KR101000057B1 (ko) | 2010-12-10 |
EP2238627A4 (en) | 2013-06-19 |
WO2009099282A2 (en) | 2009-08-13 |
KR20090085324A (ko) | 2009-08-07 |
US20090194161A1 (en) | 2009-08-06 |
CN101933159A (zh) | 2010-12-29 |
US9209326B2 (en) | 2015-12-08 |
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