WO2013048006A3 - 이중구조의 투명전도막 및 그 제조방법 - Google Patents

이중구조의 투명전도막 및 그 제조방법 Download PDF

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WO2013048006A3
WO2013048006A3 PCT/KR2012/006462 KR2012006462W WO2013048006A3 WO 2013048006 A3 WO2013048006 A3 WO 2013048006A3 KR 2012006462 W KR2012006462 W KR 2012006462W WO 2013048006 A3 WO2013048006 A3 WO 2013048006A3
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Prior art keywords
light
layer
transmitting layer
transparent conductive
conductive film
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PCT/KR2012/006462
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English (en)
French (fr)
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WO2013048006A8 (ko
WO2013048006A2 (ko
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조준식
박상현
윤재호
신기식
유진수
윤경훈
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한국에너지기술연구원
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Priority to CN201280015087.9A priority Critical patent/CN103503156A/zh
Priority to US14/118,522 priority patent/US20140083501A1/en
Publication of WO2013048006A2 publication Critical patent/WO2013048006A2/ko
Publication of WO2013048006A3 publication Critical patent/WO2013048006A3/ko
Publication of WO2013048006A8 publication Critical patent/WO2013048006A8/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

본 발명은 전기적 특성과 광포획 능력이 모두 뛰어난 투명전도막 및 그 제조방법에 관한 것으로, 본 발명에 의한 이중구조 투명전도성막은, 태양전지의 전면 반사 방지막이나 전면전극 또는 후면 반사막으로 사용되는 투명전도막으로서, 광투과층과; 일면은 상기 광투과층에 접하고, 타면에는 표면 텍스처 구조가 형성된 광포획층으로 구성되며, 상기 광투과층의 전기전도도 A와 상기 광포획층의 전기전도도 a는 A>a의 관계가 있고, 상기 광투과층의 에칭성 B와 상기 광포획층의 에칭성 b는 B<b의 관계가 있는 것을 특징으로 한다. 본 발명의 다른 형태에 의한 이중구조 투명전도막의 제조방법은 태양전지의 전면 반사 방지막이나 전면전극 또는 후면 반사막으로 사용되는 투명전도막을 제조하는 방법으로서, 기판에 광투과층을 형성하는 단계; 상기 광투과층 위에 광포획층을 형성하는 단계; 및 상기 광포획층의 표면을 에칭하여 표면 텍스처 구조를 형성하는 단계를 포함하며, 상기 광투과층의 전기전도도 A와 상기 광포획층의 전기전도도 a는 A>a의 관계가 있고, 상기 광투과층의 에칭성 B와 상기 광포획층의 에칭성 b는 B<b의 관계가 있는 것을 특징으로 한다.
PCT/KR2012/006462 2011-09-28 2012-08-14 이중구조의 투명전도막 및 그 제조방법 WO2013048006A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280015087.9A CN103503156A (zh) 2011-09-28 2012-08-14 双重结构透明导电膜及其制造方法
US14/118,522 US20140083501A1 (en) 2011-09-28 2012-08-14 Transparent conducting film having double structure and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110098571A KR101178496B1 (ko) 2011-09-28 2011-09-28 이중구조의 투명전도막 및 그 제조방법
KR10-2011-0098571 2011-09-28

Publications (3)

Publication Number Publication Date
WO2013048006A2 WO2013048006A2 (ko) 2013-04-04
WO2013048006A3 true WO2013048006A3 (ko) 2013-05-23
WO2013048006A8 WO2013048006A8 (ko) 2013-09-19

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Country Status (4)

Country Link
US (1) US20140083501A1 (ko)
KR (1) KR101178496B1 (ko)
CN (1) CN103503156A (ko)
WO (1) WO2013048006A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101541414B1 (ko) 2013-06-17 2015-08-03 한국에너지기술연구원 이중구조 투명전도막과 이를 이용한 태양전지 및 이들의 제조방법
CN104701398B (zh) * 2013-12-04 2018-03-23 常州亚玛顿股份有限公司 高效率双玻太阳能电池模块
KR101660434B1 (ko) 2014-08-14 2016-09-28 한국세라믹기술원 플라즈마 광폭 전기전도성막 식각 방법
CN105470341A (zh) * 2014-09-05 2016-04-06 中国科学院苏州纳米技术与纳米仿生研究所 一种廉价无序宽谱广角减反结构及其制作方法
CN108028297A (zh) 2015-09-15 2018-05-11 加利福尼亚大学董事会 氧化锌在氮化镓上的多步沉积
CN105304732B (zh) * 2015-09-18 2017-08-25 河北曹妃甸汉能薄膜太阳能有限公司 制备透明导电氧化物薄膜的方法及其应用
US9892821B2 (en) * 2016-01-04 2018-02-13 Samsung Electronics Co., Ltd. Electrical conductors and electronic devices including the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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KR20090084539A (ko) * 2008-02-01 2009-08-05 주식회사 엘지화학 이중층 구조의 표면 텍스처링된 산화아연계 투명도전성박막 및 그 제조방법
JP2011511470A (ja) * 2008-02-04 2011-04-07 エルジー エレクトロニクス インコーポレイティド 多層透明導電層を備えた太陽電池及びその製造方法

Also Published As

Publication number Publication date
WO2013048006A8 (ko) 2013-09-19
US20140083501A1 (en) 2014-03-27
WO2013048006A2 (ko) 2013-04-04
KR101178496B1 (ko) 2012-09-07
CN103503156A (zh) 2014-01-08

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