JP2011510177A - バリア層の無電解析出 - Google Patents

バリア層の無電解析出 Download PDF

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Publication number
JP2011510177A
JP2011510177A JP2010543475A JP2010543475A JP2011510177A JP 2011510177 A JP2011510177 A JP 2011510177A JP 2010543475 A JP2010543475 A JP 2010543475A JP 2010543475 A JP2010543475 A JP 2010543475A JP 2011510177 A JP2011510177 A JP 2011510177A
Authority
JP
Japan
Prior art keywords
solution
mol
reducing agent
barrier layer
metal surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010543475A
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English (en)
Japanese (ja)
Other versions
JP2011510177A5 (enExample
Inventor
メリース ライムント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of JP2011510177A publication Critical patent/JP2011510177A/ja
Publication of JP2011510177A5 publication Critical patent/JP2011510177A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2010543475A 2008-01-24 2009-01-20 バリア層の無電解析出 Pending JP2011510177A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08150612 2008-01-24
PCT/EP2009/050589 WO2009092706A2 (en) 2008-01-24 2009-01-20 Electroless deposition of barrier layers

Publications (2)

Publication Number Publication Date
JP2011510177A true JP2011510177A (ja) 2011-03-31
JP2011510177A5 JP2011510177A5 (enExample) 2012-03-08

Family

ID=40901477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010543475A Pending JP2011510177A (ja) 2008-01-24 2009-01-20 バリア層の無電解析出

Country Status (9)

Country Link
US (1) US20110059611A1 (enExample)
EP (1) EP2255024A2 (enExample)
JP (1) JP2011510177A (enExample)
KR (1) KR20100102738A (enExample)
CN (1) CN101925691A (enExample)
IL (1) IL206719A (enExample)
RU (1) RU2492279C2 (enExample)
TW (1) TW200949010A (enExample)
WO (1) WO2009092706A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011174180A (ja) * 2010-02-05 2011-09-08 E-Chem Enterprise Corp 太陽電池電極を提供するための無電解めっき溶液

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011000758A1 (en) 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US8895441B2 (en) 2012-02-24 2014-11-25 Lam Research Corporation Methods and materials for anchoring gapfill metals
US9551074B2 (en) * 2014-06-05 2017-01-24 Lam Research Corporation Electroless plating solution with at least two borane containing reducing agents
ES2826441T3 (es) * 2017-06-02 2021-05-18 Atotech Deutschland Gmbh Baños de metalizado no electrolítico de aleación de níquel, un método de deposición de aleaciones de níquel, depósitos de aleación de níquel y usos de dichos depósitos de aleación de níquel formados
WO2019145336A1 (en) * 2018-01-25 2019-08-01 Université de Mons Nickel alloy plating
JP7375009B2 (ja) 2018-11-06 2023-11-07 アトテック ドイチュラント ゲー・エム・ベー・ハー ウント コー． カー・ゲー 無電解ニッケルめっき溶液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006044990A1 (en) * 2004-10-18 2006-04-27 Enthone Inc. Cobalt and nickel electroless plating in microelectronic devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002778A (en) * 1973-08-15 1977-01-11 E. I. Du Pont De Nemours And Company Chemical plating process
US6605874B2 (en) * 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
US6645567B2 (en) * 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
US6902605B2 (en) * 2003-03-06 2005-06-07 Blue29, Llc Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
KR101170560B1 (ko) * 2003-05-09 2012-08-01 바스프 에스이 반도체 산업에서 사용하기 위한 3성분 물질의 무전해석출용 조성물
US6924232B2 (en) * 2003-08-27 2005-08-02 Freescale Semiconductor, Inc. Semiconductor process and composition for forming a barrier material overlying copper
US7531463B2 (en) * 2003-10-20 2009-05-12 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US7268074B2 (en) * 2004-06-14 2007-09-11 Enthone, Inc. Capping of metal interconnects in integrated circuit electronic devices
US7176133B2 (en) * 2004-11-22 2007-02-13 Freescale Semiconductor, Inc. Controlled electroless plating
US7476616B2 (en) * 2004-12-13 2009-01-13 Fsi International, Inc. Reagent activator for electroless plating
US20060188659A1 (en) * 2005-02-23 2006-08-24 Enthone Inc. Cobalt self-initiated electroless via fill for stacked memory cells
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US7658790B1 (en) * 2007-07-03 2010-02-09 Intermolecular, Inc. Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006044990A1 (en) * 2004-10-18 2006-04-27 Enthone Inc. Cobalt and nickel electroless plating in microelectronic devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011174180A (ja) * 2010-02-05 2011-09-08 E-Chem Enterprise Corp 太陽電池電極を提供するための無電解めっき溶液

Also Published As

Publication number Publication date
RU2492279C2 (ru) 2013-09-10
EP2255024A2 (en) 2010-12-01
IL206719A (en) 2014-06-30
TW200949010A (en) 2009-12-01
IL206719A0 (en) 2010-12-30
KR20100102738A (ko) 2010-09-24
US20110059611A1 (en) 2011-03-10
WO2009092706A2 (en) 2009-07-30
CN101925691A (zh) 2010-12-22
WO2009092706A3 (en) 2010-01-07
RU2010134880A (ru) 2012-02-27

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