JP7375009B2 - 無電解ニッケルめっき溶液 - Google Patents
無電解ニッケルめっき溶液 Download PDFInfo
- Publication number
- JP7375009B2 JP7375009B2 JP2021523739A JP2021523739A JP7375009B2 JP 7375009 B2 JP7375009 B2 JP 7375009B2 JP 2021523739 A JP2021523739 A JP 2021523739A JP 2021523739 A JP2021523739 A JP 2021523739A JP 7375009 B2 JP7375009 B2 JP 7375009B2
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- Prior art keywords
- layer
- acid
- nickel
- plating solution
- concentration
- Prior art date
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims description 110
- 238000007747 plating Methods 0.000 title claims description 75
- 229910052759 nickel Inorganic materials 0.000 title claims description 49
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 85
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 60
- 239000010949 copper Substances 0.000 claims description 39
- 229910052763 palladium Inorganic materials 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 239000010931 gold Substances 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 31
- -1 Molybdenum ion Chemical class 0.000 claims description 30
- 235000001014 amino acid Nutrition 0.000 claims description 28
- 150000001413 amino acids Chemical class 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims description 22
- 229910052721 tungsten Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000011733 molybdenum Substances 0.000 claims description 21
- 239000010937 tungsten Substances 0.000 claims description 21
- 239000008139 complexing agent Substances 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 11
- 229910001453 nickel ion Inorganic materials 0.000 claims description 11
- 125000001741 organic sulfur group Chemical group 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 4
- 229960003067 cystine Drugs 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 4
- DLLMHEDYJQACRM-UHFFFAOYSA-N 2-(carboxymethyldisulfanyl)acetic acid Chemical compound OC(=O)CSSCC(O)=O DLLMHEDYJQACRM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 3
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 3
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 claims description 3
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims description 3
- 235000018417 cysteine Nutrition 0.000 claims description 3
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 claims description 3
- XBNHRNFODJOFRU-UHFFFAOYSA-N 3-(2-benzothiazolylthio)-1-propanesulfonic acid Chemical compound C1=CC=C2SC(SCCCS(=O)(=O)O)=NC2=C1 XBNHRNFODJOFRU-UHFFFAOYSA-N 0.000 claims description 2
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 claims description 2
- MXVUSJUYJDGCJB-UHFFFAOYSA-N 3-ethoxycarbothioylsulfanylpropane-1-sulfonic acid Chemical compound CCOC(=S)SCCCS(O)(=O)=O MXVUSJUYJDGCJB-UHFFFAOYSA-N 0.000 claims description 2
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 claims description 2
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 claims description 2
- 229940120146 EDTMP Drugs 0.000 claims description 2
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 claims description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 claims description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 2
- 235000011180 diphosphates Nutrition 0.000 claims description 2
- 229950004394 ditiocarb Drugs 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 claims description 2
- 125000004119 disulfanediyl group Chemical group *SS* 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 30
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 28
- 230000035882 stress Effects 0.000 description 28
- 229940024606 amino acid Drugs 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 16
- 229960002449 glycine Drugs 0.000 description 14
- 239000004471 Glycine Substances 0.000 description 13
- 239000003381 stabilizer Substances 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 7
- 239000011593 sulfur Substances 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 description 5
- 229940005631 hypophosphite ion Drugs 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 4
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 4
- 239000012190 activator Substances 0.000 description 4
- 235000004279 alanine Nutrition 0.000 description 4
- 229960004106 citric acid Drugs 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- FBMUYWXYWIZLNE-UHFFFAOYSA-N nickel phosphide Chemical compound [Ni]=P#[Ni] FBMUYWXYWIZLNE-UHFFFAOYSA-N 0.000 description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- QWMFKVNJIYNWII-UHFFFAOYSA-N 5-bromo-2-(2,5-dimethylpyrrol-1-yl)pyridine Chemical group CC1=CC=C(C)N1C1=CC=C(Br)C=N1 QWMFKVNJIYNWII-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- RWVGQQGBQSJDQV-UHFFFAOYSA-M sodium;3-[[4-[(e)-[4-(4-ethoxyanilino)phenyl]-[4-[ethyl-[(3-sulfonatophenyl)methyl]azaniumylidene]-2-methylcyclohexa-2,5-dien-1-ylidene]methyl]-n-ethyl-3-methylanilino]methyl]benzenesulfonate Chemical group [Na+].C1=CC(OCC)=CC=C1NC1=CC=C(C(=C2C(=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=2C(=CC(=CC=2)N(CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=C1 RWVGQQGBQSJDQV-UHFFFAOYSA-M 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- QNAYBMKLOCPYGJ-UHFFFAOYSA-N Alanine Chemical compound CC([NH3+])C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-N 0.000 description 2
- YASYEJJMZJALEJ-UHFFFAOYSA-N Citric acid monohydrate Chemical compound O.OC(=O)CC(O)(C(O)=O)CC(O)=O YASYEJJMZJALEJ-UHFFFAOYSA-N 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- 241000080590 Niso Species 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229960002303 citric acid monohydrate Drugs 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical group [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 2
- 150000002763 monocarboxylic acids Chemical class 0.000 description 2
- UJRJCSCBZXLGKF-UHFFFAOYSA-N nickel rhenium Chemical compound [Ni].[Re] UJRJCSCBZXLGKF-UHFFFAOYSA-N 0.000 description 2
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 2
- 150000003628 tricarboxylic acids Chemical class 0.000 description 2
- SNICXCGAKADSCV-JTQLQIEISA-N (-)-Nicotine Chemical compound CN1CCC[C@H]1C1=CC=CN=C1 SNICXCGAKADSCV-JTQLQIEISA-N 0.000 description 1
- XSPUSVIQHBDITA-KXDGEKGBSA-N (6r,7r)-7-[[(2e)-2-(2-amino-1,3-thiazol-4-yl)-2-methoxyiminoacetyl]amino]-3-[(5-methyltetrazol-2-yl)methyl]-8-oxo-5-thia-1-azabicyclo[4.2.0]oct-2-ene-2-carboxylic acid Chemical compound S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)/C(=N/OC)C=2N=C(N)SC=2)CC=1CN1N=NC(C)=N1 XSPUSVIQHBDITA-KXDGEKGBSA-N 0.000 description 1
- HOZBSSWDEKVXNO-DKWTVANSSA-N 2-aminobutanedioic acid;(2s)-2-aminobutanedioic acid Chemical compound OC(=O)C(N)CC(O)=O.OC(=O)[C@@H](N)CC(O)=O HOZBSSWDEKVXNO-DKWTVANSSA-N 0.000 description 1
- ULHLNVIDIVAORK-UHFFFAOYSA-N 2-hydroxybutanedioic acid Chemical compound OC(=O)C(O)CC(O)=O.OC(=O)C(O)CC(O)=O ULHLNVIDIVAORK-UHFFFAOYSA-N 0.000 description 1
- OORRCVPWRPVJEK-UHFFFAOYSA-N 2-oxidanylethanoic acid Chemical compound OCC(O)=O.OCC(O)=O OORRCVPWRPVJEK-UHFFFAOYSA-N 0.000 description 1
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 1
- DFPAKSUCGFBDDF-ZQBYOMGUSA-N [14c]-nicotinamide Chemical compound N[14C](=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-ZQBYOMGUSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229960003767 alanine Drugs 0.000 description 1
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000000837 carbohydrate group Chemical group 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 229960003136 leucine Drugs 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229960002715 nicotine Drugs 0.000 description 1
- SNICXCGAKADSCV-UHFFFAOYSA-N nicotine Natural products CN1CCCC1C1=CC=CN=C1 SNICXCGAKADSCV-UHFFFAOYSA-N 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 1
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 1
- HJSRRUNWOFLQRG-UHFFFAOYSA-N propanedioic acid Chemical compound OC(=O)CC(O)=O.OC(=O)CC(O)=O HJSRRUNWOFLQRG-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical group C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 229960004295 valine Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
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- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
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Description
本発明は、独立請求項による無電解ニッケルめっき溶液、無電解めっき方法、ニッケル合金層、物品および前記めっき溶液の使用を提供する。さらなる実施態様は従属請求項およびこの明細書に開示される。
・ ニッケルイオン源、
・ モリブデンイオン源、
・ タングステンイオン源、
・ 次亜リン酸イオン源、
・ 錯化剤、
・ 濃度0.38~38.00μmol/Lの少なくとも1つの有機硫黄含有化合物、
・ 好ましくは濃度0.67~40.13mmol/Lの少なくとも1つのアミノ酸
を含む。
・ 67.5~98.4質量%(質量パーセント)、好ましくは81.5~98.4質量%、より好ましくは88~92質量%のニッケル、
・ 1~10質量%、好ましくは4~8.5質量%のモリブデン、
・ 0.1~4質量%、好ましくは0.5~2質量%のタングステン、
・ 0.5~4.5質量%、好ましくは1.5~3質量%のリン
を含み、且つ好ましくは他の合金成分不含である。
・ 81.5~98.4質量%、好ましくは88~92質量%のニッケル、
・ 1~10質量%、好ましくは4~8.5質量%のモリブデン、
・ 0.1~4質量%、好ましくは0.5~2質量%のタングステン、
・ 0.5~4.5質量%、好ましくは1.5~3質量%のリン
からなり、且つ
・ 他の合金成分不含である。
本発明の無電解ニッケルめっき溶液は、無電解ニッケル浴または無電解ニッケルめっき浴とも称される。溶液との用語は、1つ以上の成分が溶解されていない状態で部分的に存在し得ることを除外しない。
本発明のめっき溶液を、本発明のニッケル合金層を基板上に、特に半導体ウェハまたはチップ上に堆積するために使用できる。本発明の特定の物品を以下に記載する。本発明のめっき溶液を、それらの物品のいずれかを製造するために使用できる。本発明の溶液を特に、2つの金属層の間、例えば銅層またはアルミニウム層と他の金属層との間のバリア層(拡散層)を製造して、前記他の金属中への銅のマイグレーションを防ぐために使用できる。前記他の金属は例えばパラジウムまたは金である。
1つの実施態様において、ニッケルイオンの濃度は0.067~0.133mol/L、好ましくは0.084~0.116mol/Lである。
1つの実施態様において、モリブデンイオンの濃度は1.05~4.18mmol/L、好ましくは1.58~3.66mmol/Lである。
1つの実施態様において、タングステンイオンの濃度は12.1~109.2mmol/L、好ましくは24.2~97.1mmol/Lである。
ニッケル、モリブデンおよびタングステンを還元するための還元剤として、次亜リン酸塩が使用される。
1つ以上の錯化剤が使用される場合、以下の濃度は全ての錯化剤の総量に関する。
有機硫黄含有化合物、好ましくは二価の硫黄含有化合物は、めっき溶液用の安定剤として使用される。安定剤は、めっきされないことが望まれる基板領域において、例えば開いた領域が備えられていない半導体基板のパッシベーション上で、めっきが生じないか、あまり生じないようにする。さらに、それは浴の安定性を高めて、浴をその自己分解について防止することができる。
1つ以上のアミノ酸が使用される場合、以下の濃度は全てのアミノ酸の総量に関する。
1つ以上の硫黄含有化合物およびアミノ酸が使用される場合、以下の比は全ての硫黄含有化合物の合計および全てのアミノ酸の合計に関する。
さらなる成分として、前記溶液は酸、例えば硫酸を含み得る。
前記溶液のpHは7~11、好ましくは8~10の範囲であってよい。
本発明の方法においては、本願内で記載される本発明の任意の溶液を使用できる。
第1の部分は前処理を含み、上述の銅またはアルミニウム層の表面、例えばAl/Al合金およびCuパッドの表面についての表面処理を含む。Alの前処理のために、種々の亜鉛化(zincation)が利用可能であり、例えばシアン化物不含の化学の産業標準を満たすXenolyte(商標)cleaner ACA(商標)、Xenolyte Etch MA(商標)、Xenolyte CFA(商標)、またはXenolyte CF(商標)(全てAtotech Deutschland GmbHから入手可能)である。
pH: 好ましくは5~6.5、より好ましくは5.6~6.0
浴の温度: 好ましくは70~90℃、より好ましくは82~87℃
浸漬時間: 好ましくは3~20分、より好ましくは5~10分
追加的な安定剤: 好ましくは10~500mg/L、より好ましくは100~300mg/L。
本発明のニッケル合金層は、上述の無電解ニッケルめっき溶液から、該溶液がそのような層をめっきするために使用される場合、または上述の方法により、得ることができるか、または得られる。
銅層またはアルミニウム層/(本発明の)ニッケル合金層
を含むことができ、その際、本発明のニッケル合金層は好ましくは外側の層、つまり自由なアクセス可能な表面を含む。
銅層またはアルミニウム層/(本発明の)ニッケル合金層/パラジウム層
で含むことができ、その際、前記パラジウム層は好ましくは外側の層、つまり自由なアクセス可能な表面を含む。パラジウム層を介して他の素子、例えば回路キャリアまたはプリント回路板へのはんだ付けされた接続を作製することができる。
銅層またはアルミニウム層/(本発明の)ニッケル合金層/金層、または
銅層またはアルミニウム層/(本発明の)ニッケル合金層/パラジウム層/金層
を含むことができ、その際、前記金層は好ましくは外側の層であり、つまり、自由なアクセス可能な表面を含む。金層を介して他の素子、例えば回路キャリアまたはプリント回路板へのはんだ付けされた接続を作製することができる。
応力測定
法線応力はベントストリップ法: Cu応力ストリップ(銅-鉄合金PN: 1194)上に堆積し、続いて堆積物応力分析器を使用することによる応力測定(ASTM規格B975)によって測定される。
Fischerscope H100Cを用い、ビッカースを使用して押込試験を実施した。試験されるべきニッケル層を400℃の温度で、10分間(加熱および冷却を除く)アニールした。次いで、ビッカース圧子(ビッカース硬さを測定するために使用される試料)を最大負荷1N、保持時間4秒、および負荷/除去速度 dF/dt=±0.5N/秒で前記層中に押し込む。次いで、押込を光学顕微鏡によって検査する。
例2は、例1の溶液を使用することによる6つの異なる堆積物からの層の組成を示す。各々の堆積についてめっき時間は10分であった。
例3は本発明の溶液の全ての化合物を使用するが、その際、還元剤の次亜リン酸塩を、増加する量のDMAB(ジメチルアミンボラン)と一緒に混合される比較例に関する。
例4は、種々の量のアミノ酸のアラニンと共に本発明の溶液を使用する例に関する。
例1からの浴、250rpmで撹拌、88℃、pH=9.5、10分のめっき時間だが、以下の添加剤の組み合わせを用いる:
5.1 N,N-ジメチル-ジチオカルバミルプロピルスルホン酸とグリシンとの組み合わせ
全ての試料は400℃で10分間アニールされた。
Claims (15)
- ・ ニッケルイオン源、
・ モリブデンイオン源、
・ タングステンイオン源、
・ 次亜リン酸イオン源、
・ 少なくとも1つの錯化剤
を含む無電解ニッケルめっき溶液であって、前記溶液はホウ素を含むいかなる還元剤も含まず、前記溶液がさらに、
・ 濃度0.38~38.00μmol/Lの少なくとも1つの有機硫黄含有化合物、および
・ 濃度0.67~40.13mmol/Lの少なくとも1つのアミノ酸
を含むことを特徴とする、前記無電解ニッケルめっき溶液。 - アミノ酸:有機硫黄含有化合物のモル比が、282:1~14,079:1である、請求項1に記載のめっき溶液。
- 次亜リン酸イオンの濃度が0.09~0.27mol/Lである、請求項1または2に記載のめっき溶液。
- ニッケルイオンの濃度が0.067~0.133mol/Lである、請求項1から3までのいずれか1項に記載のめっき溶液。
- モリブデンイオンの濃度が1.05~4.18mmol/Lである、請求項1から4までのいずれか1項に記載のめっき溶液。
- タングステンイオンの濃度が12.1~109.2mmol/Lである、請求項1から5までのいずれか1項に記載のめっき溶液。
- 前記アミノ酸が硫黄を含有しないアミノ酸である、請求項1から6までのいずれか1項に記載のめっき溶液。
- 前記有機硫黄含有化合物が、N,N-ジメチル-ジチオカルバミルプロピルスルホン酸、3-メルカプトプロパンスルホン酸、3,3-ジチオビス-1-プロパンスルホン酸、3-(2-ベンゾチアゾリルメルカプト)プロパンスルホン酸、3-[(エトキシ-チオキソメチル)チオ]-1-プロパンスルホン酸、3-S-イソチウロニウムプロパンスルホネート、ナトリウムジエチルジチオカルバメート、チオ二酢酸、ジチオ二酢酸、チオジグリコール酸、ジチオジグリコール酸、チオスルフェート、チオウレア、チオシアネート、システインおよびシスチンからなる群から選択される、請求項1から7までのいずれか1項に記載のめっき溶液。
- 前記錯化剤が、クエン酸、イソクエン酸、EDTA、EDTMP、HDEPおよびピロリン酸塩からなる群から選択される、請求項1から8までのいずれか1項に記載のめっき溶液。
- 基板(2)上でニッケル合金層(5)を無電解めっきする方法であって、前記基板を請求項1から9までのいずれか1項に記載の無電解ニッケルめっき溶液と接触させることを含む、前記方法。
- 前記基板が銅層(4)またはアルミニウム層を含み、その際、前記ニッケル合金層(5)を銅層(4)またはアルミニウム層上でめっきする、請求項10に記載の方法。
- ・ 81.5~98.4質量%のニッケル
・ 1~10質量%のモリブデン
・ 0.1~4質量%のタングステン
・ 0.5~4.5質量%のリン
を含む、請求項1から9までのいずれか1項に記載の無電解ニッケルめっき溶液から得られる四元系ニッケル合金層であって、-40~+120N/mm2の範囲の法線応力を有し、前記法線応力は、ASTM規格B975に準拠するベントストリップ法: 銅-鉄合金PN: 1194応力ストリップ上に堆積し、続いて堆積物応力分析器を使用することによる応力測定に従って測定される、前記四元系ニッケル合金層。 - ニッケル合金層(5)を含む物品(1)であって、前記ニッケル合金層が請求項12に記載のニッケル合金層である、前記物品(1)。
- 前記物品が、銅層またはアルミニウム層、続いて前記ニッケル合金層、およびパラジウムおよび/または金層の積層体をこの順で含む、請求項13に記載の物品。
- 2つの金属層間でバリア層を生成するための、無電解ニッケルめっき溶液の使用であって、
前記無電解ニッケルめっき溶液は、
・ ニッケルイオン源、
・ モリブデンイオン源、
・ タングステンイオン源、
・ 次亜リン酸イオン源、
・ 少なくとも1つの錯化剤
を含み、
前記溶液はホウ素を含むいかなる還元剤も含まず、前記溶液がさらに、
・ 濃度0.38~38.00μmol/Lの少なくとも1つの有機硫黄含有化合物、および
・ 濃度0.67~40.13mmol/Lの少なくとも1つのアミノ酸
を含むことを特徴とする、前記使用。
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2019
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- 2019-11-05 US US17/285,111 patent/US20210371985A1/en not_active Abandoned
- 2019-11-05 TW TW108140008A patent/TWI722637B/zh active
- 2019-11-05 ES ES19795239T patent/ES2882690T3/es active Active
- 2019-11-05 CN CN201980071845.0A patent/CN112996933B/zh active Active
- 2019-11-05 EP EP19795239.3A patent/EP3679167B1/en active Active
- 2019-11-05 WO PCT/EP2019/080239 patent/WO2020094642A1/en unknown
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20170125179A1 (en) | 2014-07-21 | 2017-05-04 | Nantong Memtech Technologies Co., Ltd. | Arc-ablation resistant switch contact and preparation method thereof |
JP2016201364A (ja) | 2016-06-09 | 2016-12-01 | 日本化学工業株式会社 | 導電性粒子及びそれを含む導電性材料 |
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KR20210089695A (ko) | 2021-07-16 |
JP2022506393A (ja) | 2022-01-17 |
CN112996933B (zh) | 2023-08-08 |
US20210371985A1 (en) | 2021-12-02 |
WO2020094642A1 (en) | 2020-05-14 |
EP3679167A1 (en) | 2020-07-15 |
TW202026462A (zh) | 2020-07-16 |
CN112996933A (zh) | 2021-06-18 |
EP3679167B1 (en) | 2021-06-16 |
SG11202103872PA (en) | 2021-05-28 |
TWI722637B (zh) | 2021-03-21 |
ES2882690T3 (es) | 2021-12-02 |
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