CN102482781B - 锡和锡合金的无电镀覆方法 - Google Patents
锡和锡合金的无电镀覆方法 Download PDFInfo
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- CN102482781B CN102482781B CN201080037591.XA CN201080037591A CN102482781B CN 102482781 B CN102482781 B CN 102482781B CN 201080037591 A CN201080037591 A CN 201080037591A CN 102482781 B CN102482781 B CN 102482781B
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000007772 electroless plating Methods 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 103
- 229910052802 copper Inorganic materials 0.000 claims abstract description 102
- 239000010949 copper Substances 0.000 claims abstract description 102
- 238000007747 plating Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims description 24
- 238000007598 dipping method Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- -1 phosphorus compound Chemical class 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052816 inorganic phosphate Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910017944 Ag—Cu Inorganic materials 0.000 claims 1
- 229910020836 Sn-Ag Inorganic materials 0.000 claims 1
- 229910020888 Sn-Cu Inorganic materials 0.000 claims 1
- 229910020938 Sn-Ni Inorganic materials 0.000 claims 1
- 229910020988 Sn—Ag Inorganic materials 0.000 claims 1
- 229910019204 Sn—Cu Inorganic materials 0.000 claims 1
- 229910008937 Sn—Ni Inorganic materials 0.000 claims 1
- 239000008199 coating composition Substances 0.000 claims 1
- 150000002898 organic sulfur compounds Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000007654 immersion Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 87
- 238000005476 soldering Methods 0.000 description 11
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 10
- 238000004062 sedimentation Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical group [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical class N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XAWSBNBFMQAZCE-UHFFFAOYSA-N N#C[Co]C#N Chemical class N#C[Co]C#N XAWSBNBFMQAZCE-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Chemical class 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical class [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000010956 selective crystallization Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- UTYXJYFJPBYDKY-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide;trihydrate Chemical class O.O.O.[K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] UTYXJYFJPBYDKY-UHFFFAOYSA-N 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Chemical Treatment Of Metals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
本发明涉及一种无电(浸渍)镀覆在印刷电路板、IC基板、半导体晶片等的制造中作为最终面层的具有≥1μm厚度的锡和锡合金的方法。该方法在铜接触垫与无电镀覆的锡层之间使用无电镀覆的铜牺牲层,所述铜牺牲层在锡镀覆期间完全溶解。该方法弥补了在厚的锡层无电镀覆期间铜从接触垫上不希望的损耗。
Description
技术领域
本发明涉及一种在印刷电路板、IC基板、半导体晶片等的制造中无电镀覆锡和锡合金作为最终面层的的方法。
背景技术
锡表面在印刷电路板、IC基板、半导体晶片和相关的器件的制造中用作最终面层,即充当用于随后组装步骤的可钎焊或可接合表面。锡主要沉积在表示为接触垫的基板的铜构件上。该应用的选择方法是通过无电镀覆步骤沉积锡,而浸渍镀覆是最普遍使用的方法。锡或锡合金在铜表面上的浸渍镀覆工艺,也称为交换反应、置换或替换镀覆,遵从下式(1)
Sn2++2Cu→Sn+2Cu+ (1)。
反应(1)的结果是,来自于由铜制成的接触垫的铜在锡沉积期间溶解(The Electrodeposition of Tin and its Alloys,M.Jordan,E.G.Leuze Publishers,1stEd.1995,p.89-90)。
在浸渍镀锡期间的铜损耗可能在现有技术印刷电路板(PCB)例如HDI PCB(高密度互连)、IC基板和半导体晶片的制造中造成不可接受的失效,其可以具有非常薄或窄的铜接触垫以用锡涂覆。PCB、IC基板和半导体晶片的接触垫的典型厚度或宽度值为50μm、25μm、15μm或甚至更少。尤其对于低于25μm的接触垫尺寸而言,必须使浸渍镀锡期间的铜的损耗最小化并受控。否则,可能出现电路中断和铜垫对基板的附着性损失。
沉积在由铜制成的接触垫上的锡层充当用于回流和钎焊工艺以及丝焊的可钎焊和可接合的表面。用于所述应用的锡层通常具有≤1μm的厚度。另一方面,可能希望具有≥1μm或甚至≥5μm厚度的锡层。用于此的一种可能的应用将是充当用于连续钎焊工艺的焊料仓(solderdepot)。在该情形中,在薄的接触垫的浸渍镀锡期间,相应的铜损耗不再可接受。
在回流和钎焊工艺期间,由于铜-锡金属间化合物(IMC)的形成,因此组成接触垫的铜的量更多地减少。
描述了一种通过无电镀覆在由铜制成的接触垫上沉积厚的锡-铅合金层的工艺(M.Galvanotechnik83,1992,pp.2101-2110)。在厚的可钎焊层的沉积期间,铜的损耗通过在锡-铅合金的镀覆之前镀覆铜,通过增加接触垫的厚度来进行补偿。
不可能通过仅在需要的地方(即在接触垫上)电镀来选择性沉积较厚的铜层,因为并非所有的垫可以在电路板制造的该阶段中电接触。由于相对于可实现的连续铜蚀刻步骤的纵横比而言的限制,因此在PCB制造或晶片金属化的早期阶段中通过电镀沉积较厚的铜层是不可行的。
文献US2008/0036079A1在现有技术部分在[0005]-[0007]段中公开了一种在PCB的制造中构造可钎焊的接触垫的方法。该方法包括将粘合剂层例如锡层无电镀覆在铜接触垫上的步骤。该方法的缺点是由于铜扩散,因此铜接触垫减少并且在锡与铜之间的接触位点上形成空腔(参见本发明的比较例1)。
文献US2008/0036079A1在段[0025]-[0030]中进一步公开了在PCB的制造中构造可钎焊的接触垫的发明具体实施方案。该方法包括将铜层无电镀覆在铜接触垫上随后浸渍镀覆粘合剂层例如锡层的步骤。用无电工艺镀覆的铜层在回流和钎焊操作期间充当IMC形成的储存器。然而,通过无电镀覆所沉积的铜层在粘合剂层的浸渍镀覆期间完全消耗不是所述工艺的目的。无电铜层应减少在回流和钎焊工艺期间由铜锡IMC的形成所造成的接触垫的铜损耗。该工艺得到由电镀的铜和无电镀覆的铜构成的界面,该界面在回流或钎焊工艺后容易形成裂纹,由此减少钎焊接头可靠性(参见本发明的比较例2)。
发明目的
本发明的目的是提供一种将锡和锡合金层(尤其是具有≥1μm厚度的那些)浸渍镀覆在铜接触垫上,a)同时在锡和锡合金沉积期间使铜从接触垫的溶解最小化,和b)不产生减少钎焊可靠性的电镀铜和无电镀覆铜的界面的方法。
发明概述
通过一种锡或锡合金的无电镀覆方法实现了该目的,所述方法包括以下步骤:(i)提供具有表面的基板,其具有铜接触垫和带有使所述接触垫表面暴露的开口的钎焊掩模层,(ii)通过无电镀覆使铜牺牲层沉积在接触垫上,和(iii)通过浸渍镀覆使锡或锡合金沉积在步骤(ii)中所沉积的牺牲铜层上,特征在于在锡或锡合金的浸渍镀覆期间所述牺牲铜层完全溶解。
附图简述
图1表示根据本发明的方法,其中在锡或锡合金的浸渍镀覆期间,通过无电镀覆所沉积的铜层完全溶解。
发明详述
根据本发明的锡和锡合金的无电镀覆方法包括以下步骤:
(i)提供基板101,该基板具有接触垫102和暴露所述接触垫表面的钎焊掩模层105,
(ii)通过无电镀覆使铜牺牲层103沉积在接触垫102上,和
(iii)通过浸渍镀覆使锡或锡合金层104沉积在步骤(ii)中沉积的铜牺牲层103上,
其中在步骤(iii)中在锡或锡合金层104的沉积期间,在步骤(ii)中沉积的铜牺牲层103的完全溶解。
现在参考图1a,根据本发明的优选实施方案,提供了非导电基板101,其在表面上具有接触垫102作为接触区的实施方案。非导电基板101可以是电路板,其可由有机材料或纤维增强的有机材料或者颗粒增强的有机材料等制成,例如环氧树脂、聚酰亚胺、双马来酰亚胺三嗪、氰酸酯、聚苯并环丁烯或其玻璃纤维复合物等。非导电基板101也可以是半导体基板。
所述接触垫102通常由金属材料例如铜形成,铜是优选的并且在本发明的实施例中使用铜。
根据本发明,所述接触垫102不限于平坦结构。所述接触垫102可以是涂覆有锡或锡合金层104的过孔或槽。过孔和槽优选具有5-250μm的深度和5-200μm的宽度。
在铜的无电沉积之前,将接触垫102的表面清洗。在本发明的一个实施方案中,使用包含酸和润湿剂的酸性清洗剂用于该目的。作为替代或补充,如果接触垫的表面是铜,则其可以进行微蚀刻工艺,这提供了规定的层102的微观粗糙度和清洁的铜表面。通过使基板101与包含酸和氧化剂的组合物例如包含硫酸和过氧化氢的组合物接触实现微蚀刻。
在下一步骤中,优选地活化铜垫表面以确保随后的无电铜工艺的引发。好的引发剂是钯,并且只需要微量的钯形式的种子(seed),其可以在浸渍反应中沉积。必须注意,用于该目的的钯浸渍浴仅使钯沉积在铜垫上并且不沉积在周围的区域,因为这可能导致在铜垫之间形成连接并且进而导致电短路。
在步骤(ii)中选择性地用铜牺牲层103涂覆接触垫102,因为钎焊掩模层105仅使接触垫102的表面暴露(图1b)。由无电铜电解质并且用本领域已知的步骤沉积铜牺牲层103。
无电镀铜电解质包括铜离子源、pH改性剂、络合剂例如EDTA、烷醇胺或酒石酸盐、促进剂、稳定剂添加剂和还原剂。在大多数情形中,使用甲醛作为还原剂,其他常见的还原剂是次磷酸盐、二甲胺硼烷和硼氢化物。用于无电镀铜电解质的典型稳定剂添加剂是化合物例如巯基苯并噻唑、硫脲、各种其他硫化合物、氰化物和/或亚铁氰化物和/或钴氰化物盐、聚乙二醇衍生物、杂环氮化合物、甲基丁醇和丙腈。沉积速度可以通过参数例如镀覆浴温和镀覆时间调节。
牺牲铜层103的厚度相对于后来浸渍镀覆的锡或锡合金层104的所需的厚度进行调节,即以在锡或锡合金层104的浸渍镀覆期间使全部的铜牺牲层103溶解的方式。发明人发现,如果沉积1μm锡或锡合金层,则约0.8μm的铜牺牲层103溶解。如果例如要沉积5μm的锡,则需要沉积4μm的铜以确保铜牺牲层103全部消耗。约0.8μm在这里定义为0.7-0.9μm范围。
对于锡或锡合金层104的沉积,获得了约0.8的沉积系数。沉积系数在这里定义为在锡或锡合金沉积期间溶解的铜牺牲层103的厚度与直到全部铜牺牲层103被消耗的锡或锡合金层104的厚度的比值。约0.8在这里定义为0.7-0.9的沉积系数。
锡或锡合金层104与铜牺牲层103的厚度比不超过0.8,并且优选为0.3-0.8,更优选0.4-0.75,并且最优选0.5-0.7。这里定义的厚度比是在步骤(ii)中直接在沉积后的铜牺牲层103的厚度与步骤(iii)中沉积的锡或锡合金层104的厚度的比值。因此,0.8的厚度比对应于铜牺牲层103全部消耗。小于0.8的厚度比导致整个铜牺牲层103的消耗以及接触垫102的部分消耗。这是优选的,因为在来自接触垫102的铜与锡或锡合金层104之间的附着性得到改善。然而,小于0.3的厚度比导致不希望的接触垫102的高消耗,并且因此不是希望的。
当考虑约0.8的沉积系数和0.3-0.8的锡或锡合金层104与铜牺牲层103的厚度比时,0.8的厚度比将导致在锡或锡合金层104沉积期间铜牺牲层103全部溶解。约0.8的沉积系数和根据本发明的铜牺牲层103与锡或锡合金层104的厚度比之间的关系进一步在表1中解释。另一方面,0.3的厚度系数和0.8的沉积系数导致接触垫102的部分溶解。
表1:通过0.8的沉积系数以及0.3、0.5和0.8的厚度比值得到的牺牲铜层103和锡或锡合金层104的厚度:
在本发明的优选实施方案中,牺牲铜层103被浸渍镀覆的锡或锡合金层104完全溶解。
在本发明的另一个实施方案中,在浸渍镀覆期间,还有与≤50%的镀覆的锡层104厚度相等的铜接触垫102的铜的一部分溶解。尽管镀覆的锡层104厚度的50%厚度是要溶解的接触垫102的铜厚度的最大量,但更优选≤40%,甚至更优选≤25%,最优选≤10%。这种铜从接触垫的溶解可以是有利的,因为这导致随后形成的锡或锡合金层对接触垫102的铜层的增加的附着性。
在本发明的一个实施方案中,牺牲铜层103用酸性清洗剂处理并且任选地用表面的微蚀刻的组合物处理,如对于铜接触垫表面所述的那样。
在本发明的另一个实施方案中,在铜的无电沉积后,仅用水冲洗铜牺牲层103的表面。
随后,使基板与浸渍镀覆电解质接触用于锡或锡合金的沉积。
用于浸渍镀覆的无电锡和锡合金的镀覆电解质是本领域已知的。优选的电解质包含Sn2+离子源例如甲磺酸锡(II),酸例如硫酸或甲磺酸,用于铜离子的络合剂,例如硫脲或硫脲衍生物、咪唑、苯并咪唑、苯并三唑、脲、柠檬酸和其混合物。任选地,镀覆浴还包含至少一种另外的至少一种非锡的另外金属离子源。要与锡沉积形成锡合金的典型的另外金属是银、金、镓、铟、锗、锑、铋、铜和其混合物。优选的锡合金是锡-银、锡-银-铜和锡-铜合金。可以例如通过调节镀覆浴温和镀覆时间控制镀覆速度。镀覆浴在50℃-98℃,更优选70℃-95℃的温度范围内工作。镀覆时间为5分钟-120分钟,更优选15分钟-60分钟。典型的锡沉积工艺在95℃温度下进行30分钟,同时氮气或另外的惰性气体鼓泡通过锡浴。
工件可以在现有的浸泡(浸渍)生产线中处理。为了处理印刷电路板,发现使用被称为传送带化的生产线特别有利,其中印刷电路板在水平传送浴上传送通过生产线,同时通过合适的喷嘴例如喷射或流动喷嘴与处理溶液接触。为了该目的,可以优选水平或垂直放置印刷电路板。
在锡或锡合金沉积后,有利地在包含硫脲或另外的用于铜离子的强配位剂(complexant)的溶液中冲洗该板,以从锡或锡合金表面上除去任何铜离子。
如US5,211,831所公开的(通过引用将其并入本文)那样,锡或锡合金镀覆工艺的寿命可以通过用选择性结晶工艺连续除去被硫脲络合的铜离子而进一步增强。
如EP1427869B1所公开的(通过引用将其并入本文)那样,可以在工作期间使在浸渍镀覆浴中富含的锡离子连续还原成亚锡离子。
在本发明的另一个实施方案中,使锡或锡合金表面与包含一种或多种无机或有机磷酸或其盐的后处理组合物接触,这抑制了在所述表面上的氧化物形成。这类组合物公开于EP1716949B1(通过引用将其并入本文)。所述后处理抑制在镀覆基板的储存期间“泛黄”,即锡或锡合金表面的氧化。
本发明相对于从现有技术获知的工艺的优点是:
本发明方法允许将锡或锡合金浸渍镀覆到具有≤50μm,更优选≤25μm,甚至更优选≤15μm厚度的铜接触垫上,而不损坏铜接触垫,这是由于来自所述接触垫的铜根据式(1)溶解。本发明进一步通过浸渍镀覆允许厚的锡和锡合金层的沉积。厚的锡和锡合金层具有≥1μm并且至多20μm,更优选1.5μm至10μm的厚度。这种厚的锡和锡合金涂层可以用作焊料仓。具有≤1μm厚度的薄锡层只适合作为可钎焊和可接合的表面,但不额外地提供焊料仓。
根据本发明,在由铜制成的接触垫上具有≥1μm厚度的锡或锡合金的浸渍镀覆层的基板具有少于浸渍镀覆的锡或锡合金层厚度的50%的接触垫的铜损耗,即如果锡的浸渍镀覆层具有3μm厚度,则由于在由铜制成的接触垫上无电镀覆铜的牺牲层,因此接触垫的铜损耗≤1.5μm。
沉积在铜牺牲层103上的锡或锡合金层104的表面粗糙度可再现地低于直接沉积在构成接触垫的电镀铜层上的锡或锡合金层。这是令人惊奇的,因为技术人员将预期相反的结果(J.G.Allen,C.Granzulea,T.B.Ring,“Solderability Evaluation of Immersion Tin-Coated3-Dimensional Molded Circuit Boards”,Proceedings of the 3rdInternational SAMPE Electronics Conference,June20-22,1989,pp.1099-1110)。具有低表面粗糙度的锡或锡合金表面对于连续钎焊或接合工序是优选的。
与通过从现有技术获知的方法制造的浸渍锡或锡合金镀覆的基板相比,在根据本发明制造的基板的储存期间晶须形成的趋势减少。
另外,由于通过根据本发明的方法产生的更光滑的锡或锡合金表面,因此与通过从现有技术获知的浸渍镀覆方法得到的较粗糙的表面形态相比,所述锡或锡合金表面的腐蚀也减少。
实施例
现在将通过参考以下非限定性的实施例来解释本发明。
在所有实施例中使用具有各种尺寸的铜接触垫的基板。接触垫尺寸为从非常小(具有低至30μm宽度的150μm长的条带)到大(具有约600μm直径的圆形接触垫)。作为替代,在具有未组织化的(unstructured)铜表面的基板上进行沉积。
在所有实施例中使用包含甲磺酸锡(II)、甲磺酸和硫脲的浸渍镀覆浴。
首先将由铜制成的接触垫表面用酸性清洗剂(Pro Select H,Atotech Deutschland GmbH的产品)清洗并且用MicroEtch H(AtotechDeutschland GmbH的产品)蚀刻。
在比较例1的情形中,由浸渍镀覆浴直接使锡层104(图1c)沉积在铜接触垫102(图1a)上,而在比较例2和实施例1中,在从无电镀覆浴将另外的铜层103(图1b)沉积到接触垫(P Plus,Atotech Deutschland GmbH的产品)后,浸渍镀覆锡层。在铜的无电沉积前,将接触垫用包含钯离子的组合物(Activator1000,得自AtotechDeutschland GmbH的产品)活化。
测试方法:
层厚的测定
使用商业X-射线荧光(XRF)工具监测通过无电镀覆所沉积的锡和铜层的厚度。另外,对电路板样品取横截面并且用光学显微镜研究上述层的厚度。
钎焊接头的可靠性
通过将钎焊球(具有450μm直径的铟SAC305球)放在具有锡表面和400μm直径的接触垫和印刷焊剂(Alpha WS9160-M7)上检验钎焊接头的可靠性。使试样在氮气氛下以典型的无铅钎焊模式回流。然后通过在老化之前和之后剪切钎焊点(solder bump)来测定钎焊接头的可靠性。所得的平均剪切力以克给出。
由如上所述的钎焊接头的可靠性试验得到的失效模式的定义:
失效模式1→在钎焊接头界面中少于5%断裂并且最合乎需要。
失效模式2→在钎焊接头界面中5-25%断裂并且较不合乎需要。
比较例1
在清洗并且蚀刻后,将基板的接触垫浸渍镀覆锡。
锡层的厚度为4.94μm。接触垫的铜损耗为3.8μm,即相对于镀覆锡层厚度的77%。
比较例2
在清洗和蚀刻接触垫的表面后,由无电镀覆浴沉积铜层,随后活化无电镀覆的铜表面并且浸渍镀覆锡。
由无电镀覆浴沉积的铜层厚度为2.71μm并且锡层厚度为3.46μm。在锡沉积后,保留了约0.65μm无电镀覆的铜层。
平均剪切力为690g,并且发现的失效模式为5%失效模式1和95%失效模式2。
实施例1
在清洗和蚀刻接触垫表面后,由无电镀覆浴沉积铜层,随后活化无电镀覆的铜表面并且浸渍镀覆锡。
由无电镀覆浴所沉积的铜层厚度为1.21μm并且锡层厚度为3.9μm。接触垫的铜损耗为1.36μm,即相对于镀覆锡层厚度的35%。
平均剪切力为755g,并且发现失效模式为55%失效模式1和45%失效模式2。
Claims (7)
1.锡和锡合金的无电镀覆方法,包括以下步骤:
(i)提供基板,该基板具有铜接触垫和使所述接触垫暴露的钎焊掩模层,
(ii)通过无电镀覆使铜牺牲层沉积在铜接触垫上,和
(iii)通过浸渍镀覆使锡或锡合金沉积在步骤(ii)中所沉积的铜牺牲层上
其中厚度比为0.3-0.8,并且
其中这里定义的厚度比是在步骤(ii)中直接在沉积后铜牺牲层的厚度与步骤(iii)中沉积的锡或锡合金层的厚度的比值,
并且其中在步骤(iii)中沉积的锡或锡合金的厚度为1-10μm。
2.根据前述权利要求任一项的方法,其中厚度比为0.4-0.75。
3.根据权利要求1或2的方法,其中厚度比为0.5-0.7。
4.根据权利要求1或2的方法,其中铜牺牲层完全溶解,并且另外与≤50%的步骤(iii)中镀覆的锡层的厚度相等的一部分铜接触垫溶解。
5.根据权利要求1或2的方法,其中锡合金选自Sn-Ag、Sn-Ag-Cu、Sn-Cu和Sn-Ni合金。
6.根据权利要求1或2的方法,其中锡镀覆组合物包含:
Sn2+离子源,
酸,
有机硫化合物,和
任选的至少一种另外的金属源。
7.根据权利要求1或2的方法,其中在步骤(iii)后将锡或锡合金层用包含磷化合物的组合物处理,所述磷化合物选自无机磷酸、有机磷酸、无机磷酸盐和有机磷酸盐。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09168492A EP2298960A1 (en) | 2009-08-24 | 2009-08-24 | Method for electroless plating of tin and tin alloys |
EP09168492.8 | 2009-08-24 | ||
PCT/EP2010/005330 WO2011023411A1 (en) | 2009-08-24 | 2010-08-24 | Method for electroless plating of tin and tin alloys |
Publications (2)
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CN102482781A CN102482781A (zh) | 2012-05-30 |
CN102482781B true CN102482781B (zh) | 2014-10-22 |
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US (1) | US9458541B2 (zh) |
EP (2) | EP2298960A1 (zh) |
JP (1) | JP5755231B2 (zh) |
KR (1) | KR101689914B1 (zh) |
CN (1) | CN102482781B (zh) |
TW (1) | TWI480421B (zh) |
WO (1) | WO2011023411A1 (zh) |
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KR102427122B1 (ko) * | 2014-08-15 | 2022-07-28 | 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 | 구리 및 구리 합금 회로의 광학 반사율을 감소시키는 방법 및 터치 스크린 디바이스 |
CN107109619A (zh) * | 2014-12-29 | 2017-08-29 | 应用材料公司 | 用于沉积处理期间掩蔽基板的掩蔽布置、用于在基板上的层沉积的沉积设备、和用于清洁掩蔽布置的方法 |
CN108735408B (zh) * | 2017-04-21 | 2020-02-21 | 李文熙 | 高导电卑金属电极或合金低欧姆芯片电阻器的制作方法 |
US10774425B2 (en) * | 2017-05-30 | 2020-09-15 | Macdermid Enthone Inc. | Elimination of H2S in immersion tin plating solution |
US10566267B2 (en) | 2017-10-05 | 2020-02-18 | Texas Instruments Incorporated | Die attach surface copper layer with protective layer for microelectronic devices |
EP3800277B1 (en) * | 2019-10-02 | 2023-05-10 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for performing immersion tin process in the production of a component carrier |
EP4108804A1 (en) | 2019-10-10 | 2022-12-28 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Method and apparatus for performing immersion tin process or copper plating process in the production of a component carrier |
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US3917486A (en) * | 1973-07-24 | 1975-11-04 | Kollmorgen Photocircuits | Immersion tin bath composition and process for using same |
JPH0370083A (ja) | 1989-08-08 | 1991-03-26 | Sharp Corp | Cad/cae一体型システム |
JP2787142B2 (ja) * | 1991-03-01 | 1998-08-13 | 上村工業 株式会社 | 無電解錫、鉛又はそれらの合金めっき方法 |
US5211831A (en) | 1991-11-27 | 1993-05-18 | Mcgean-Rohco, Inc. | Process for extending the life of a displacement plating bath |
JPH09170083A (ja) * | 1995-12-20 | 1997-06-30 | Mitsubishi Electric Corp | スズまたはスズ合金の無電解めっき方法 |
DE19755185B4 (de) * | 1997-12-11 | 2004-04-08 | Ami Doduco Gmbh | Austausch Zinnbad |
JP2000309876A (ja) * | 1999-04-23 | 2000-11-07 | Okuno Chem Ind Co Ltd | 置換型無電解錫−銀合金めっき液 |
DE10132478C1 (de) | 2001-07-03 | 2003-04-30 | Atotech Deutschland Gmbh | Verfahren zum Abscheiden einer Metallschicht sowie Verfahren zum Regenerieren einer Metallionen in einer hohen Oxidationsstufe enthaltenden Lösung |
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JP2006009039A (ja) * | 2004-06-21 | 2006-01-12 | Rambo Chemicals (Hong Kong) Ltd | ウィスカー成長が抑制されたスズ系めっき皮膜及びその形成方法 |
US7148569B1 (en) * | 2004-09-07 | 2006-12-12 | Altera Corporation | Pad surface finish for high routing density substrate of BGA packages |
GB0507887D0 (en) | 2005-04-20 | 2005-05-25 | Rohm & Haas Elect Mat | Immersion method |
TWI330053B (en) | 2006-08-14 | 2010-09-01 | Unimicron Technology Corp | Conductive connection structure formed on the surface of circuit board and manufacturing method thereof |
US7572723B2 (en) * | 2006-10-25 | 2009-08-11 | Freescale Semiconductor, Inc. | Micropad for bonding and a method therefor |
US7807572B2 (en) * | 2008-01-04 | 2010-10-05 | Freescale Semiconductor, Inc. | Micropad formation for a semiconductor |
-
2009
- 2009-08-24 EP EP09168492A patent/EP2298960A1/en not_active Withdrawn
-
2010
- 2010-08-24 TW TW099128310A patent/TWI480421B/zh active
- 2010-08-24 EP EP10749619A patent/EP2470686B1/en not_active Not-in-force
- 2010-08-24 JP JP2012525940A patent/JP5755231B2/ja active Active
- 2010-08-24 US US13/390,700 patent/US9458541B2/en active Active
- 2010-08-24 KR KR1020127004693A patent/KR101689914B1/ko active IP Right Grant
- 2010-08-24 CN CN201080037591.XA patent/CN102482781B/zh active Active
- 2010-08-24 WO PCT/EP2010/005330 patent/WO2011023411A1/en active Application Filing
Also Published As
Publication number | Publication date |
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EP2298960A1 (en) | 2011-03-23 |
WO2011023411A1 (en) | 2011-03-03 |
TW201132798A (en) | 2011-10-01 |
CN102482781A (zh) | 2012-05-30 |
TWI480421B (zh) | 2015-04-11 |
EP2470686B1 (en) | 2013-04-03 |
US20120148733A1 (en) | 2012-06-14 |
US9458541B2 (en) | 2016-10-04 |
EP2470686A1 (en) | 2012-07-04 |
JP5755231B2 (ja) | 2015-07-29 |
KR20120051034A (ko) | 2012-05-21 |
KR101689914B1 (ko) | 2016-12-26 |
JP2013502512A (ja) | 2013-01-24 |
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