JP2006049589A - 半田接合部の形成方法 - Google Patents
半田接合部の形成方法 Download PDFInfo
- Publication number
- JP2006049589A JP2006049589A JP2004228795A JP2004228795A JP2006049589A JP 2006049589 A JP2006049589 A JP 2006049589A JP 2004228795 A JP2004228795 A JP 2004228795A JP 2004228795 A JP2004228795 A JP 2004228795A JP 2006049589 A JP2006049589 A JP 2006049589A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- nickel
- palladium
- solder joint
- bga
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 44
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 7
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical group [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000005452 bending Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- -1 Inorganic acid salt Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
【解決手段】 本発明は、銅導体上に半田を接合するために形成された金接合層を備える半田接合部の形成方法において、パラジウムの還元析出させるためのニッケル系下地処理を銅導体上に施し、0.50μm以下の非常に薄い厚みのニッケル系下地層上にパラジウムを還元析出させてパラジウムバリア層を形成し、該パラジウムバリア層上に金接合層を形成するものとした。
【選択図】 なし
Description
Grid Array)タイプの超小型半導体パッケージの開発が盛んに行われている。
・ 無電解ニッケル−リン下地
Ni 6g/L
次亜リン酸Na 30g/L
pH 4.5〜5.0
液温 85℃
処理時間 0.05μm…0.25分
0.1μm…0.5分
0.5μm…2.5分
2.5μm…7.5分
5.0μm…15分
Pd 1g/L
アンモニア水 30mL/L
無機酸塩 90g/L
pH 8.0
液温 50℃
処理時間 0.05μm…3分
0.5μm…30分
1.0μm…60分
シアン化金カリウム 2g/L
キレート剤 50g/L
有機酸塩 20g/L
pH 4.0〜5.0
液温 80℃
処理時間 0.05μm…10分
2 ニッケル系下地層
3 レジスト
4 金接合層
5 半田接合部
6 半田ボール
Claims (4)
- 銅導体上に半田を接合するために形成された金接合層を備える半田接合部の形成方法において、
パラジウムを還元析出させるためのニッケル系下地処理を銅導体上に施し、該ニッケル系下地層上にパラジウムを還元析出させてパラジウムバリア層を形成し、該パラジウムバリア層上に金接合層を形成したことを特徴とする半田接合部の形成方法。 - ニッケル系下地層は、0.50μm以下の厚みである請求項1に記載の半田接合部の形成方法。
- パラジウムバリア層は、0.01〜0.50μm以下の厚みである請求項1または請求項2に記載の半田接合部の形成方法。
- 半田は、錫−鉛系または鉛フリー系の半田である請求項1〜請求項3いずれかに記載の半田接合部の形成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004228795A JP2006049589A (ja) | 2004-08-05 | 2004-08-05 | 半田接合部の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004228795A JP2006049589A (ja) | 2004-08-05 | 2004-08-05 | 半田接合部の形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006049589A true JP2006049589A (ja) | 2006-02-16 |
Family
ID=36027802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004228795A Pending JP2006049589A (ja) | 2004-08-05 | 2004-08-05 | 半田接合部の形成方法 |
Country Status (1)
Country | Link |
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JP (1) | JP2006049589A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109862687A (zh) * | 2018-12-27 | 2019-06-07 | 深圳市景旺电子股份有限公司 | 一种Mini LED柔性印制电路板及其制作方法 |
-
2004
- 2004-08-05 JP JP2004228795A patent/JP2006049589A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109862687A (zh) * | 2018-12-27 | 2019-06-07 | 深圳市景旺电子股份有限公司 | 一种Mini LED柔性印制电路板及其制作方法 |
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