CN101925691A - 阻挡层的无电沉积 - Google Patents

阻挡层的无电沉积 Download PDF

Info

Publication number
CN101925691A
CN101925691A CN2009801029184A CN200980102918A CN101925691A CN 101925691 A CN101925691 A CN 101925691A CN 2009801029184 A CN2009801029184 A CN 2009801029184A CN 200980102918 A CN200980102918 A CN 200980102918A CN 101925691 A CN101925691 A CN 101925691A
Authority
CN
China
Prior art keywords
solution
reductive agent
compound
metallic surface
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801029184A
Other languages
English (en)
Chinese (zh)
Inventor
R·梅利斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of CN101925691A publication Critical patent/CN101925691A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2009801029184A 2008-01-24 2009-01-20 阻挡层的无电沉积 Pending CN101925691A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08150612.3 2008-01-24
EP08150612 2008-01-24
PCT/EP2009/050589 WO2009092706A2 (en) 2008-01-24 2009-01-20 Electroless deposition of barrier layers

Publications (1)

Publication Number Publication Date
CN101925691A true CN101925691A (zh) 2010-12-22

Family

ID=40901477

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801029184A Pending CN101925691A (zh) 2008-01-24 2009-01-20 阻挡层的无电沉积

Country Status (9)

Country Link
US (1) US20110059611A1 (enExample)
EP (1) EP2255024A2 (enExample)
JP (1) JP2011510177A (enExample)
KR (1) KR20100102738A (enExample)
CN (1) CN101925691A (enExample)
IL (1) IL206719A (enExample)
RU (1) RU2492279C2 (enExample)
TW (1) TW200949010A (enExample)
WO (1) WO2009092706A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105296971A (zh) * 2014-06-05 2016-02-03 朗姆研究公司 利用至少两种硼烷还原剂进行无电镀敷

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011000758A1 (en) 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US20110192316A1 (en) * 2010-02-05 2011-08-11 E-Chem Enterprise Corp. Electroless plating solution for providing solar cell electrode
US8895441B2 (en) 2012-02-24 2014-11-25 Lam Research Corporation Methods and materials for anchoring gapfill metals
ES2826441T3 (es) * 2017-06-02 2021-05-18 Atotech Deutschland Gmbh Baños de metalizado no electrolítico de aleación de níquel, un método de deposición de aleaciones de níquel, depósitos de aleación de níquel y usos de dichos depósitos de aleación de níquel formados
WO2019145336A1 (en) * 2018-01-25 2019-08-01 Université de Mons Nickel alloy plating
JP7375009B2 (ja) 2018-11-06 2023-11-07 アトテック ドイチュラント ゲー・エム・ベー・ハー ウント コー． カー・ゲー 無電解ニッケルめっき溶液

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002778A (en) * 1973-08-15 1977-01-11 E. I. Du Pont De Nemours And Company Chemical plating process
US6605874B2 (en) * 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
US6645567B2 (en) * 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
US6902605B2 (en) * 2003-03-06 2005-06-07 Blue29, Llc Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
KR101170560B1 (ko) * 2003-05-09 2012-08-01 바스프 에스이 반도체 산업에서 사용하기 위한 3성분 물질의 무전해석출용 조성물
US6924232B2 (en) * 2003-08-27 2005-08-02 Freescale Semiconductor, Inc. Semiconductor process and composition for forming a barrier material overlying copper
US7531463B2 (en) * 2003-10-20 2009-05-12 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US7268074B2 (en) * 2004-06-14 2007-09-11 Enthone, Inc. Capping of metal interconnects in integrated circuit electronic devices
US7332193B2 (en) * 2004-10-18 2008-02-19 Enthone, Inc. Cobalt and nickel electroless plating in microelectronic devices
US7176133B2 (en) * 2004-11-22 2007-02-13 Freescale Semiconductor, Inc. Controlled electroless plating
US7476616B2 (en) * 2004-12-13 2009-01-13 Fsi International, Inc. Reagent activator for electroless plating
US20060188659A1 (en) * 2005-02-23 2006-08-24 Enthone Inc. Cobalt self-initiated electroless via fill for stacked memory cells
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US7658790B1 (en) * 2007-07-03 2010-02-09 Intermolecular, Inc. Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105296971A (zh) * 2014-06-05 2016-02-03 朗姆研究公司 利用至少两种硼烷还原剂进行无电镀敷
CN105296971B (zh) * 2014-06-05 2019-08-06 朗姆研究公司 利用至少两种硼烷还原剂进行无电镀敷

Also Published As

Publication number Publication date
RU2492279C2 (ru) 2013-09-10
EP2255024A2 (en) 2010-12-01
IL206719A (en) 2014-06-30
TW200949010A (en) 2009-12-01
IL206719A0 (en) 2010-12-30
KR20100102738A (ko) 2010-09-24
US20110059611A1 (en) 2011-03-10
WO2009092706A2 (en) 2009-07-30
JP2011510177A (ja) 2011-03-31
WO2009092706A3 (en) 2010-01-07
RU2010134880A (ru) 2012-02-27

Similar Documents

Publication Publication Date Title
CN101925691A (zh) 阻挡层的无电沉积
CN100408202C (zh) 化学镀溶液和方法
US6645567B2 (en) Electroless plating bath composition and method of using
CN101971296B (zh) 用于带有盖层的衬底的沉积后清洁方法和配方
US20080254205A1 (en) Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys
JP6367322B2 (ja) 湿式ウエハバックコンタクトを使用したシリコンビアを通した銅メッキのための方法
WO2017127197A1 (en) Process and chemistry of plating of through silicon vias
TW201012966A (en) Electroless plating solution, method for electroless plating using the same and method for manufacturing circuit board
TW201029842A (en) Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces
US6398855B1 (en) Method for depositing copper or a copper alloy
TW200902758A (en) Electroless gold plating bath, electroless gold plating method and electronic parts
KR101170560B1 (ko) 반도체 산업에서 사용하기 위한 3성분 물질의 무전해석출용 조성물
KR20070070210A (ko) 마이크로전자 장치에 대한 코발트 및 니켈 무전해 도금
CN104160064B (zh) 用于钴合金无电沉积的碱性镀浴
US7198662B2 (en) Electroless plating pre-treatment solution and electroles plating method
KR20070113243A (ko) 적층 메모리 셀의 코발트 자기 개시적 무전해 비아 충진
DE10347809A1 (de) Zusammensetzungen zur stromlosen Abscheidung ternärer Materialien für die Halbleiterindustrie
KR101224208B1 (ko) 음이온 계면활성제를 포함하는 배선용 무전해 동도금액 및 이에 의해 제조된 동 피막
KR101224207B1 (ko) 양이온 계면활성제를 포함하는 배선용 무전해 동도금액 및 이에 의해 제조된 동 피막
KR101261563B1 (ko) 자기 촉매형 코발트-인 도금액, 이를 이용한 무전해 도금 공정 및 이에 의해 제조된 코발트-인 합금 피막
EP1022355B1 (en) Deposition of copper on an activated surface of a substrate
Chen et al. Electroless nickel bath for wafer bumping: Influence of additives
KR101100084B1 (ko) 구리배선 형성방법
CN118879420A (zh) 一种抑制铜/钴电偶腐蚀的铜互连cmp后碱性清洗液
TW201618228A (zh) 利用濕式晶圓背側接觸進行銅電鍍矽穿孔的方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20101222