JP2011510177A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011510177A5 JP2011510177A5 JP2010543475A JP2010543475A JP2011510177A5 JP 2011510177 A5 JP2011510177 A5 JP 2011510177A5 JP 2010543475 A JP2010543475 A JP 2010543475A JP 2010543475 A JP2010543475 A JP 2010543475A JP 2011510177 A5 JP2011510177 A5 JP 2011510177A5
- Authority
- JP
- Japan
- Prior art keywords
- solution
- metal surface
- reducing agent
- compound
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08150612 | 2008-01-24 | ||
| PCT/EP2009/050589 WO2009092706A2 (en) | 2008-01-24 | 2009-01-20 | Electroless deposition of barrier layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011510177A JP2011510177A (ja) | 2011-03-31 |
| JP2011510177A5 true JP2011510177A5 (enExample) | 2012-03-08 |
Family
ID=40901477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010543475A Pending JP2011510177A (ja) | 2008-01-24 | 2009-01-20 | バリア層の無電解析出 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20110059611A1 (enExample) |
| EP (1) | EP2255024A2 (enExample) |
| JP (1) | JP2011510177A (enExample) |
| KR (1) | KR20100102738A (enExample) |
| CN (1) | CN101925691A (enExample) |
| IL (1) | IL206719A (enExample) |
| RU (1) | RU2492279C2 (enExample) |
| TW (1) | TW200949010A (enExample) |
| WO (1) | WO2009092706A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011000758A1 (en) | 2009-06-30 | 2011-01-06 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| US8895441B2 (en) | 2012-02-24 | 2014-11-25 | Lam Research Corporation | Methods and materials for anchoring gapfill metals |
| US9551074B2 (en) * | 2014-06-05 | 2017-01-24 | Lam Research Corporation | Electroless plating solution with at least two borane containing reducing agents |
| ES2826441T3 (es) * | 2017-06-02 | 2021-05-18 | Atotech Deutschland Gmbh | Baños de metalizado no electrolítico de aleación de níquel, un método de deposición de aleaciones de níquel, depósitos de aleación de níquel y usos de dichos depósitos de aleación de níquel formados |
| WO2019145336A1 (en) * | 2018-01-25 | 2019-08-01 | Université de Mons | Nickel alloy plating |
| JP7375009B2 (ja) | 2018-11-06 | 2023-11-07 | アトテック ドイチュラント ゲー・エム・ベー・ハー ウント コー． カー・ゲー | 無電解ニッケルめっき溶液 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002778A (en) * | 1973-08-15 | 1977-01-11 | E. I. Du Pont De Nemours And Company | Chemical plating process |
| US6605874B2 (en) * | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
| US6645567B2 (en) * | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| US6902605B2 (en) * | 2003-03-06 | 2005-06-07 | Blue29, Llc | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
| KR101170560B1 (ko) * | 2003-05-09 | 2012-08-01 | 바스프 에스이 | 반도체 산업에서 사용하기 위한 3성분 물질의 무전해석출용 조성물 |
| US6924232B2 (en) * | 2003-08-27 | 2005-08-02 | Freescale Semiconductor, Inc. | Semiconductor process and composition for forming a barrier material overlying copper |
| US7531463B2 (en) * | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US7268074B2 (en) * | 2004-06-14 | 2007-09-11 | Enthone, Inc. | Capping of metal interconnects in integrated circuit electronic devices |
| US7332193B2 (en) * | 2004-10-18 | 2008-02-19 | Enthone, Inc. | Cobalt and nickel electroless plating in microelectronic devices |
| US7176133B2 (en) * | 2004-11-22 | 2007-02-13 | Freescale Semiconductor, Inc. | Controlled electroless plating |
| US7476616B2 (en) * | 2004-12-13 | 2009-01-13 | Fsi International, Inc. | Reagent activator for electroless plating |
| US20060188659A1 (en) * | 2005-02-23 | 2006-08-24 | Enthone Inc. | Cobalt self-initiated electroless via fill for stacked memory cells |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US7658790B1 (en) * | 2007-07-03 | 2010-02-09 | Intermolecular, Inc. | Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers |
-
2009
- 2009-01-20 RU RU2010134880/02A patent/RU2492279C2/ru not_active IP Right Cessation
- 2009-01-20 CN CN2009801029184A patent/CN101925691A/zh active Pending
- 2009-01-20 KR KR1020107018826A patent/KR20100102738A/ko not_active Ceased
- 2009-01-20 WO PCT/EP2009/050589 patent/WO2009092706A2/en not_active Ceased
- 2009-01-20 JP JP2010543475A patent/JP2011510177A/ja active Pending
- 2009-01-20 US US12/863,114 patent/US20110059611A1/en not_active Abandoned
- 2009-01-20 EP EP09703297A patent/EP2255024A2/en not_active Withdrawn
- 2009-01-22 TW TW098102624A patent/TW200949010A/zh unknown
-
2010
- 2010-06-30 IL IL206719A patent/IL206719A/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011510177A5 (enExample) | ||
| JP3332668B2 (ja) | 半導体装置の配線形成に用いる無電解めっき浴及び半導体装置の配線形成方法 | |
| TWI270416B (en) | Electroless plating solution and process | |
| KR101518519B1 (ko) | 코발트 합금의 무전해 증착 | |
| TW200907104A (en) | Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys | |
| JP2011509344A5 (enExample) | ||
| RU2010134880A (ru) | Неэлектрическое осаждение барьерных слоев | |
| JP2011509344A (ja) | 誘電体層の無電解メッキ用活性化溶液 | |
| JP2017123466A (ja) | マイクロエレクトロニクスデバイスのためのワイヤボンディング可能な表面 | |
| JP2018532046A (ja) | 金を無電解めっきするためのめっき浴組成物、および金層を析出させる方法 | |
| TWI582266B (zh) | 用於鈷合金無電沈積之鹼性鍍浴 | |
| JP2013108170A (ja) | 無電解パラジウムめっき液 | |
| CN110230045A (zh) | 用于化学镀的催化剂溶液 | |
| CN103556135B (zh) | 一种用于塑料表面金属化改性的解胶溶液 | |
| CN105051254B (zh) | 供无电电镀的铜表面活化的方法 | |
| US10577692B2 (en) | Pretreatment of iron-based substrates for electroless plating | |
| CN107104076B (zh) | 一种化学镀制备ULSI-Cu布线扩散阻挡层NiCoB薄膜的方法 | |
| JP2004339578A (ja) | コバルト系合金めっき液、めっき方法及びめっき物 | |
| JP6743289B2 (ja) | 窒化ガリウム半導体の活性化されていない表面上へのパラジウムの直接的な堆積方法 | |
| JPWO2020094642A5 (enExample) | ||
| CN106684035B (zh) | 一种抗铜扩散阻挡层薄膜及其制备方法 | |
| TW201602408A (zh) | 使用錯合Ti3+金屬離子做為還原劑之連續鎳層的無電鍍沉積 | |
| CN104716089A (zh) | 在金属层上进行无电金属沉积的方法及应用 | |
| CN100346454C (zh) | 一种硅基器件的金属化接触层结构的制备方法 | |
| TWI504782B (zh) | 無電沉積溶液及製程控制 |