JP2011508416A - 発光ダイオードパッケージ - Google Patents

発光ダイオードパッケージ Download PDF

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Publication number
JP2011508416A
JP2011508416A JP2010539313A JP2010539313A JP2011508416A JP 2011508416 A JP2011508416 A JP 2011508416A JP 2010539313 A JP2010539313 A JP 2010539313A JP 2010539313 A JP2010539313 A JP 2010539313A JP 2011508416 A JP2011508416 A JP 2011508416A
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JP
Japan
Prior art keywords
light emitting
light
emitting diode
cavity
emitting chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010539313A
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English (en)
Japanese (ja)
Other versions
JP2011508416A5 (enExample
Inventor
ピョン、イン−ジュン
キム、ホン−ミン
Original Assignee
サムソン エルイーディー カンパニーリミテッド．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サムソン エルイーディー カンパニーリミテッド． filed Critical サムソン エルイーディー カンパニーリミテッド．
Publication of JP2011508416A publication Critical patent/JP2011508416A/ja
Publication of JP2011508416A5 publication Critical patent/JP2011508416A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
JP2010539313A 2007-12-24 2008-12-24 発光ダイオードパッケージ Pending JP2011508416A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20070136265 2007-12-24
PCT/KR2008/007692 WO2009082177A2 (en) 2007-12-24 2008-12-24 Light emitting diode package
KR1020080133439A KR20090069146A (ko) 2007-12-24 2008-12-24 발광 다이오드 패키지

Publications (2)

Publication Number Publication Date
JP2011508416A true JP2011508416A (ja) 2011-03-10
JP2011508416A5 JP2011508416A5 (enExample) 2012-01-19

Family

ID=40996444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010539313A Pending JP2011508416A (ja) 2007-12-24 2008-12-24 発光ダイオードパッケージ

Country Status (6)

Country Link
US (1) US20110049552A1 (enExample)
EP (1) EP2232595A4 (enExample)
JP (1) JP2011508416A (enExample)
KR (1) KR20090069146A (enExample)
CN (1) CN101939852A (enExample)
WO (1) WO2009082177A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI496325B (zh) * 2009-07-10 2015-08-11 古河電氣工業股份有限公司 A lead frame for an optical semiconductor device, a manufacturing method of a lead frame for an optical semiconductor device, and an optical semiconductor device
JP5383611B2 (ja) * 2010-01-29 2014-01-08 株式会社東芝 Ｌｅｄパッケージ
JP5799212B2 (ja) * 2010-09-21 2015-10-21 パナソニックＩｐマネジメント株式会社 発光モジュール、バックライト装置および表示装置
MY170920A (en) 2010-11-02 2019-09-17 Carsem M Sdn Bhd Leadframe package with recessed cavity for led
CN102130278B (zh) * 2010-12-31 2013-04-03 昆山琉明光电有限公司 发光二极管封装
KR101865438B1 (ko) * 2011-02-10 2018-06-07 니치아 카가쿠 고교 가부시키가이샤 발광 장치, 발광 장치의 제조 방법 및 패키지 어레이
KR20120096216A (ko) * 2011-02-22 2012-08-30 삼성전자주식회사 발광소자 패키지
MY156107A (en) 2011-11-01 2016-01-15 Carsem M Sdn Bhd Large panel leadframe
US9142745B2 (en) * 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
WO2015031179A1 (en) 2013-08-27 2015-03-05 Glo Ab Molded led package and method of making same
KR20150042362A (ko) * 2013-10-10 2015-04-21 삼성전자주식회사 발광다이오드 패키지 및 그 제조방법
WO2015139190A1 (zh) * 2014-03-18 2015-09-24 深圳市瑞丰光电子股份有限公司 一种led支架及led发光件
JP2018510514A (ja) * 2015-04-08 2018-04-12 コリア フォトニクス テクノロジー インスティテュート 窒化物系半導体発光素子及びその製造方法
CN106025047A (zh) * 2016-06-30 2016-10-12 王正作 一种led的封装及其封装方法
CN105914286A (zh) * 2016-06-30 2016-08-31 王正作 一种多管芯的led封装及其封装方法
US11367820B2 (en) 2017-09-01 2022-06-21 Suzhou Lekin Semiconductor Co., Ltd. Light emitting device package and light source device
CN107958948A (zh) * 2017-12-28 2018-04-24 广东晶科电子股份有限公司 一种led发光二极管及其制作方法
US11444227B2 (en) 2019-10-01 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package with substrate configuration having enhanced structural integrity
US11444225B2 (en) 2020-09-08 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package having a protective coating
US11329206B2 (en) 2020-09-28 2022-05-10 Dominant Opto Technologies Sdn Bhd Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same
CN116435201B (zh) * 2023-06-12 2023-09-12 四川遂宁市利普芯微电子有限公司 一种塑封封装方法以及器件封装结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095576A (ja) * 2002-08-29 2004-03-25 Toshiba Corp 光半導体装置及び光半導体モジュール及び光半導体装置の製造方法
JP2005294736A (ja) * 2004-04-05 2005-10-20 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP2006222271A (ja) * 2005-02-10 2006-08-24 Ngk Spark Plug Co Ltd 発光素子実装用基板
JP2008053726A (ja) * 2006-08-23 2008-03-06 Seoul Semiconductor Co Ltd 発光ダイオードパッケージ

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
TW414924B (en) 1998-05-29 2000-12-11 Rohm Co Ltd Semiconductor device of resin package
WO2000079605A1 (fr) * 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Diode électroluminescente
CN1225801C (zh) * 2000-02-09 2005-11-02 日本光源股份有限公司 光源装置
JP2002223005A (ja) * 2001-01-26 2002-08-09 Toyoda Gosei Co Ltd 発光ダイオード及びディスプレイ装置
JP4045781B2 (ja) * 2001-08-28 2008-02-13 松下電工株式会社 発光装置
JP4009097B2 (ja) * 2001-12-07 2007-11-14 日立電線株式会社 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
KR20070000638A (ko) * 2005-06-28 2007-01-03 삼성전기주식회사 고휘도 발광 다이오드 소자 및 그 제조방법
EP1816688B1 (en) * 2006-02-02 2016-11-02 LG Electronics Inc. Light emitting diode package
JP2007305785A (ja) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd 発光装置
US7960819B2 (en) * 2006-07-13 2011-06-14 Cree, Inc. Leadframe-based packages for solid state emitting devices
EP1928026A1 (en) * 2006-11-30 2008-06-04 Toshiba Lighting & Technology Corporation Illumination device with semiconductor light-emitting elements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095576A (ja) * 2002-08-29 2004-03-25 Toshiba Corp 光半導体装置及び光半導体モジュール及び光半導体装置の製造方法
JP2005294736A (ja) * 2004-04-05 2005-10-20 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP2006222271A (ja) * 2005-02-10 2006-08-24 Ngk Spark Plug Co Ltd 発光素子実装用基板
JP2008053726A (ja) * 2006-08-23 2008-03-06 Seoul Semiconductor Co Ltd 発光ダイオードパッケージ

Also Published As

Publication number Publication date
KR20090069146A (ko) 2009-06-29
US20110049552A1 (en) 2011-03-03
CN101939852A (zh) 2011-01-05
EP2232595A4 (en) 2011-06-22
EP2232595A2 (en) 2010-09-29
WO2009082177A2 (en) 2009-07-02
WO2009082177A3 (en) 2009-08-13

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