CN106025047A - 一种led的封装及其封装方法 - Google Patents
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Abstract
一种LED封装及其封装方法,包含了阳极电极、阴极电极、基板、发光管芯、荧光层、树脂透镜层,电学连接线,反射膜,导电银浆;其中所述发光管芯设置在所述基板的上方,并且通过所述导电银浆固定在基板上方;所述阳极电极、阴极电极分别设置在所述基板两侧,所述阳极电极一侧通过所述电学连接线与所述发光管芯连接,所述阴极电极一侧通过所述导电银浆与所述基板连接;其特征在于:所述反射膜设置在所述基板的上方,所述阴极电极内部形成有容纳所述发光管芯的碗状空间,并且所述反射膜覆盖所述阴极电极的形成碗状空间的内壁。
Description
技术领域
本发明属于半导体封装领域,涉及发光二极管(LED),特别涉及一种具有良好散热结构和机制的封装结构和封装方法。
背景技术
发光二极管(LED)是一种在半导体内流通电流,从而发出光的二极管。其中,根据发光的不同,包括使用砷化镓(GaAs发出红外线的发光二极管,使用砷镓铝(GaAIAs)发出红外线或红光的发光二极管,使用磷砷化镓(GaAsP)以发出红色、橙色、或黄色的发光二极管,使用磷化镓(GaP)已发出红色、绿色或黄色的发光二极管,使用氮化镓(GaN)以发出白色的发光二极管。
目前广泛应用于彩色电光板和照明装置等各种领域的表面安装型LED,是在由陶瓷或印制电路板所形成的基板中焊接LED芯片,并且在其上部用树脂塑封,从而形成透镜,在提高亮度的同时,更容易散发出在LED芯片所产生的热。
发光二极管(LED:light emitting diode)属于二极管的一种特殊类型,是能够将电能转化为光能的固态半导体器件,当电流通过LED的PN结时,可激发出光子。同时LED光能转化效率较高,因此LED广泛应用在指示、显示、照明灯领域,特别是在光源照明领域,LED应用的越来越多,单颗发光LED的功率越来越大。
近年来,随着大功率LED芯片的逐渐开发,为了有效地排出LED芯片中所产生的热的技术也随之被开发,以提高LED芯片的散热效率,已经研究出基板由金属材料制作而成的LED芯片,其中为防止在安装LED芯片时产生短路,在金属基板的上面形成绝缘层后,通过形成于绝缘层上的电路板安装LED芯片,并且通过引线接合等实现电连接。
白光LED以体积小、寿命长、绿色环保,并能满足各种恶劣环境要求的优点而大获发展,而功率型白光LED已成为重要的固体照明光源之一,其封装技术也得到了前所未有的发展。
如中国专利CN101404317A公开一种大功率白光LED封装方法,将LED晶片固晶在基座内、烘烤焊线后,在基座内点透明硅胶,使得透明硅胶覆盖LED晶片,然后用透镜盖住整个基座,再从透镜边缘的侧耳小孔处向透镜与基座粘合形成的空腔内注满荧光胶。最终提高了LED光色的一致性,但该专利对提高光效效果不明显。
又如中国专利CN101369623A提供一种LED芯片上涂敷荧光粉的工艺,将荧光粉和胶水按照一定比例混合后,经多次涂敷烘烤固化,直至碗杯中的胶水和荧光粉混合物固化后的液面与碗杯上边缘平齐,无凹痕出现。有效解决荧光粉一次涂敷固化中的荧光粉沉淀和聚集现象。
又如中国专利CN101714598A公开了一种白光LED封装过程中荧光粉分层沉淀的方法,将添加剂、黄色荧光粉、硅胶按一定比例均匀混合做脱泡处理,将该材料填充到白光LED大功率支架碗杯内,保持2小时后进行分段烘烤,经70℃、90℃、110℃,再到150℃分别保持1~2小时,制成白光LED成品。该发明特意采用分层沉淀的方式,使得荧光粉沉淀均匀,有效改善产品一致性差的问题。将荧光粉经多次涂覆烘烤、或分段进行烘烤一定程度上能够起到改善光圈、增强产品均匀性的作用,但同时常常会引入荧光粉分层现象,仍不能获得高光效、高均匀性的白光LED。
又如中国专利CN102185087A公开一种大功率LED封装结构,其结构中采用一种大颗粒混合小颗粒荧光粉,使涂覆的荧光胶大于芯片侧边位置,形成与所盖的透镜弧度一致的弧形。其涂覆的荧光胶是在大颗粒中混入小颗粒,大、小颗粒的半径、用量各满足一定的比例关系。大颗粒中掺入小颗粒能起到一定的改善光色质量的作用,但是由于一次完成涂覆,涂覆高度大于芯片侧边位置,这样就使得芯片侧边仍然沉积有大量荧光粉,避免不了黄圈现象的再出现。
又如中国专利CN103178194A公开了一种大功率白光LED封装结构及其制备方法,通过第一次旋转涂覆,在LED芯片上表面及侧壁上涂覆一层由小颗粒荧光粉混合而成的内层荧光胶,烘干后,再利用自动点胶机喷点,在内层荧光胶上表面、LED芯片上方对应的局部位置涂覆一层由超大颗粒荧光粉混合而成的外层荧光胶。利用外层荧光胶不易浸润已烘干的内层荧光胶的特性,使得外层荧光胶只在LED芯片上方正对应的局部位置形成一凸包。提高了光效、一定程度上避免荧光粉大量沉淀在LED芯片侧边位置而产生黄圈现象的技术不足。但该方案仍未彻底解决该技术问题。
目前LED光电转化效率大约只有35~50%,其他电能都转化为热能,LED的功率不断提升,如何解决LED的散热问题变得越来越突出。如果不能及时解决LED的散热,会因为散热使得波长发生变化,从而产生发黄现象或光的转化效率变小。在实际LED使用之前,必须对发光管芯进行封装。一般的成品LED主要包含LED管芯、热沉、电连接、荧光层、树脂透镜等部件。LED生成的热量最终排出器件及封装,必须经过封装、热沉、电路板及各层衔接层。传统的LED限制于其封装结构、散热材料、光路设置、衔接层导热与工艺等因素,无法很好解决散热问题,限制了LED的进一步推广和应用,尤其是在大功率LED上,问题凸显得更加明显。
为解决此技术问题。本发明人经过潜心研究,提出一种解决该技术问题的方案。
发明内容
本发明的目的提供一种具有良好散热效果的LED封装和封装方法。
本发明提供一种LED封装,包含了阳极电极、阴极电极、基板、发光管芯、荧光层、树脂透镜层,电学连接线,反射膜,导电银浆;其中所述发光管芯设置在所述基板的上方,并且通过所述导电银浆固定在基板上方;所述阳极电极、阴极电极分别设置在所述基板两侧,所述阳极电极一侧通过所述电学连接线与所述发光管芯连接,所述阴极电极一侧通过所述导电银浆与所述基板连接;其特征在于:
所述反射膜设置在所述基板的上方,所述阴极电极内部形成有容纳所述发光管芯的碗状空间,并且所述反射膜覆盖所述阴极电极的形成碗状空间的内壁。
优选的,所述反射膜为金属Ni膜,厚度为8nm;所述荧光层、树脂透镜层设置在所述发光管芯上方,并呈现椭圆透镜状。
优选的,所述基板材质为SiAl合金,所述基板形成的碗状空间为倒置圆台状;所述导电银浆为Ag和Sn混合物。
本发明提供LED封装的封装方法,其特征在于:
1)基板制造:通过机床进行阳极电极、阴极电极和基板裁剪,并使用冲压基床在阴极电极上压制出具有完整空间的倒置圆台形状;
2)基板镀膜:通过真空镀膜进行实现基板镀膜,具体操作为将步骤1中制造的基板到放置在镀膜架上,开启真空泵将镀膜机室内抽成真空至10-5帕斯卡,开启电源通电镀膜,加热至Ni熔点5秒钟,快速切断电源,待冷却,向真空室内充气,打开真空室,取出基板即可,从而得到在基板上的反射膜;
3)银浆铺设:通过调制好的银浆将发光管芯固定在基板上,并预热至100℃,刷上银浆,固定发光管芯;
4)金线焊接:将电学连接线与发光管芯连接;
5)荧光层铺设:透明硅胶加入适量荧光粉,覆盖LED晶片,形成荧光层;
6)形成树脂透镜层:使用环氧树脂固化在荧光层外,并且形成为透镜的形状,与光学透镜一体成型。得到LED封装。
本发明的新型的LED封装结构,能提高LED封装的散热效果;
本发明的导热银浆,具有散热效果和粘结强度;
本发明的反射膜具有良好光学反射性能,能有效反射可见光和红外光,使得LED封装内的光能有效反射,提高出光率,以减少封装内材料吸热导致LED温度偏高,性能下降问题。
作为优选,新型LED封装包括阳极电极、阴极电极、基板、发光管芯、荧光层、树脂透镜层。
作为优选,发光管芯位于基板正上方;
作为优选,阳极电极、阴极电极位于基板两侧,阴极电极也可与基板一体成型。
作为优选,基板为倒置圆台状,圆台边线与底部平面角度为30~60°;
作为优选,基板选用SiAl合金,其中Si的含量为3~10%;
作为优选,基板上可以设置一个或多个管芯;
作为优选,基板与发光管芯之间可通过导电银浆粘结,导电银浆为Ag和Sn混合物,Ag的含量为15~28%。
作为优选,基板上设置了一层Ni反射层,厚度为5~15nm;
本发明还提供了一种LED封装的封装方法:
1、通过冲压机床进行电极、基板裁剪、圆台压制;
2、通过真空镀膜或电镀方法进行实现基板镀膜;
3、通过调制好的银浆将发光管芯固定在基板上,厚度为0.05~0.1mm;
4、金线焊接;
5、荧光层铺设;
6、环氧树脂固化及光学透镜一体成型;
7、电学测试。
本发明具有以下优点:
1、本发明具有良好散热效果,管芯使用寿命长,出光率和转化率较高,适合照明领域LED封装使用。
2、本发明工序环节较为简洁,适合产业化生产。
附图说明
图1是本发明LED封装结构示意图;
图2是本发明LED封装基板及电极示意图;
图3是实施实例一中基板和电极示意图;
图4是实施实例二中分体串联示意图;
具体实施方式
下面结合具体实施例来对本发明进行进一步说明,但并不将本发明局限于这些具体实施方式。本领域技术人员应该认识到,本发明涵盖了权利要求书范围内所可能包括的所有备选方案、改进方案和等效方案。
实施例1
下面将结合附图对本发明进行进一步详述。参考图1,本实施实例提供一种LED封装包含了阳极电极05、阴极电极04、基板03、发光管芯01、荧光层06、树脂透镜层07,电学连接线09,反射膜08,导电银浆02。
其中所述发光管芯01设置在基板03的上方,并且通过导电银浆02固定在基板03上方;阳极电极05、阴极电极04分别设置在基板03两侧,阳极电极05一侧通过电学连接线09与发光管芯01连接,阴极电极04一侧通过导电银浆02与基板连接。
可选地,如图2所示,阳极电极05、阴极电极04也可两侧通过电学连接线09与发光管芯01连接。
如图1所示;反射膜08设置在基板03上方,阴极电极04形成有容纳发光管芯01的碗状空间,并反射膜08覆盖阴极电极04的形成碗状空间的内壁。
进一步地,反射膜08为金属Ni膜,厚度为8nm;荧光层06、树脂透镜层07设置在发光管芯01上方,并呈现椭圆透镜状。
本实施实例中基板材质为SiAl合金,优选的其中Si的含量为3%,Al的含量为95%;基板03形成的碗状空间为倒置圆台状,圆台边线与基板03底部平面角度为45°,基板03上放置一颗发光管芯01;导电银浆02为Ag和Sn混合物,优选的Ag的含量为18%,Sn的含量为82%。
本实施例还提供一种具体的封装方法如下:
7)基板制造:通过机床进行阳极电极、阴极电极和基板裁剪,并使用冲压基床在阴极电极上压制出具有完整空间的倒置圆台形状;
8)基板镀膜:通过真空镀膜进行实现基板镀膜,具体操作为将步骤1中制造的基板到放置在镀膜架上,开启真空泵将镀膜机室内抽成真空至10-5帕斯卡,开启电源通电镀膜,加热至Ni熔点5秒钟,快速切断电源,待冷却,向真空室内充气,打开真空室,取出基板即可,从而得到在基板上的反射膜;
9)银浆铺设:通过调制好的银浆将发光管芯固定在基板上,并预热至100℃,刷上银浆,固定发光管芯,银浆厚度为0.08mm;
10)金线焊接:将电学连接线与发光管芯连接;
11)荧光层铺设:透明硅胶加入适量荧光粉,覆盖LED晶片,形成荧光层;
12)形成树脂透镜层:使用环氧树脂固化在荧光层外,并且形成为透镜的形状,与光学透镜一体成型。得到LED封装。
上述具体实施例只是对本发明内容的示意性说明,不代表对本发明内容的限制。本领域技术人员可以想到的是,本发明中具体结构可以有很多的变化形式,但其采用技术方案的主要技术特征与本发明相同或相似,均应涵盖于本发明保护范围内。
Claims (4)
1.一种LED封装,包含了阳极电极、阴极电极、基板、发光管芯、荧光层、树脂透镜层,
电学连接线,反射膜,导电银浆;其中所述发光管芯设置在所述基板的上方,并且通过所述导电银浆固定在基板上方;所述阳极电极、阴极电极分别设置在所述基板两侧,所述阳极电极一侧通过所述电学连接线与所述发光管芯连接,所述阴极电极一侧通过所述导电银浆与所述基板连接;其特征在于:
所述反射膜设置在所述基板的上方,所述阴极电极内部形成有容纳所述发光管芯的碗状空间,并且所述反射膜覆盖所述阴极电极的形成碗状空间的内壁。
2.如权利要求1所述的LED封装,其特征在于:所述反射膜为金属Ni膜,厚度为8nm;
所述荧光层、树脂透镜层设置在所述发光管芯上方,并呈现椭圆透镜状。
3.如权利要求1所述的LED封装,其特征在于:所述基板材质为SiAl合金,所述基板形成的碗状空间为倒置圆台状;所述导电银浆为Ag和Sn混合物。
4.一种如权利要求1-3之一所述的LED封装的封装方法,其特征在于:
1)基板制造:通过机床进行阳极电极、阴极电极和基板裁剪,并使用冲压基床在阴极电极上压制出具有完整空间的倒置圆台形状;
2)基板镀膜:通过真空镀膜进行实现基板镀膜,具体操作为将步骤1中制造的基板到放置在镀膜架上,开启真空泵将镀膜机室内抽成真空至10-5帕斯卡,开启电源通电镀膜,加热至Ni熔点5秒钟,快速切断电源,待冷却,向真空室内充气,打开真空室,取出基板即可,从而得到在基板上的反射膜;
3)银浆铺设:通过调制好的银浆将发光管芯固定在基板上,并预热至100℃,刷上银浆,固定发光管芯;
4)金线焊接:将电学连接线与发光管芯连接;
5)荧光层铺设:透明硅胶加入适量荧光粉,覆盖LED晶片,形成荧光层;
6)形成树脂透镜层:使用环氧树脂固化在荧光层外,并且形成为透镜的形状,与光学透镜一体成型。得到LED封装。
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