JP2011507276A5 - - Google Patents
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- Publication number
- JP2011507276A5 JP2011507276A5 JP2010538144A JP2010538144A JP2011507276A5 JP 2011507276 A5 JP2011507276 A5 JP 2011507276A5 JP 2010538144 A JP2010538144 A JP 2010538144A JP 2010538144 A JP2010538144 A JP 2010538144A JP 2011507276 A5 JP2011507276 A5 JP 2011507276A5
- Authority
- JP
- Japan
- Prior art keywords
- thermal via
- reinforcing structure
- ceramic substrate
- height
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 230000003014 reinforcing effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 238000005488 sandblasting Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/001,267 US20090146295A1 (en) | 2007-12-11 | 2007-12-11 | Ceramic substrate having thermal via |
| PCT/US2008/086338 WO2009076494A2 (en) | 2007-12-11 | 2008-12-11 | Ceramic substrate having thermal via |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011507276A JP2011507276A (ja) | 2011-03-03 |
| JP2011507276A5 true JP2011507276A5 (enExample) | 2012-01-19 |
Family
ID=40637680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010538144A Pending JP2011507276A (ja) | 2007-12-11 | 2008-12-11 | サーマルビアを有するセラミック基板 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090146295A1 (enExample) |
| JP (1) | JP2011507276A (enExample) |
| CN (1) | CN101874299B (enExample) |
| TW (1) | TW201023307A (enExample) |
| WO (1) | WO2009076494A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101491138B1 (ko) * | 2007-12-12 | 2015-02-09 | 엘지이노텍 주식회사 | 다층 기판 및 이를 구비한 발광 다이오드 모듈 |
| US20100140790A1 (en) * | 2008-12-05 | 2010-06-10 | Seagate Technology Llc | Chip having thermal vias and spreaders of cvd diamond |
| US8757874B2 (en) | 2010-05-03 | 2014-06-24 | National Instruments Corporation | Temperature sensing system and method |
| WO2012055206A1 (zh) * | 2010-10-26 | 2012-05-03 | Yu Jianping | 氧化铝/石墨复合陶瓷材料和采用该材料为基板的led光源 |
| KR101289186B1 (ko) * | 2011-04-15 | 2013-07-26 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US9006770B2 (en) * | 2011-05-18 | 2015-04-14 | Tsmc Solid State Lighting Ltd. | Light emitting diode carrier |
| US8908383B1 (en) * | 2012-05-21 | 2014-12-09 | Triquint Semiconductor, Inc. | Thermal via structures with surface features |
| US9318466B2 (en) * | 2014-08-28 | 2016-04-19 | Globalfoundries Inc. | Method for electronic circuit assembly on a paper substrate |
| EP3850319B1 (de) * | 2018-11-09 | 2023-07-12 | Siemens Energy Global GmbH & Co. KG | Anordnung zum ermitteln der temperatur einer oberfläche |
| CN117769163B (zh) * | 2023-12-26 | 2024-05-31 | 江苏富乐华半导体科技股份有限公司 | 一种铝薄膜电路基板制备方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59230741A (ja) * | 1983-06-15 | 1984-12-25 | 株式会社日立製作所 | 形状記憶複合材料 |
| US4894115A (en) * | 1989-02-14 | 1990-01-16 | General Electric Company | Laser beam scanning method for forming via holes in polymer materials |
| JPH07221218A (ja) * | 1994-02-03 | 1995-08-18 | Toshiba Corp | 半導体装置 |
| US5802699A (en) * | 1994-06-07 | 1998-09-08 | Tessera, Inc. | Methods of assembling microelectronic assembly with socket for engaging bump leads |
| US5558267A (en) * | 1995-03-31 | 1996-09-24 | Texas Instruments Incorporated | Moat for die pad cavity in bond station heater block |
| JPH0955459A (ja) * | 1995-06-06 | 1997-02-25 | Seiko Epson Corp | 半導体装置 |
| US6247228B1 (en) * | 1996-08-12 | 2001-06-19 | Tessera, Inc. | Electrical connection with inwardly deformable contacts |
| JP3650689B2 (ja) * | 1997-05-28 | 2005-05-25 | 三菱電機株式会社 | 半導体装置 |
| US6395998B1 (en) * | 2000-09-13 | 2002-05-28 | International Business Machines Corporation | Electronic package having an adhesive retaining cavity |
| DE10051547A1 (de) * | 2000-10-18 | 2002-04-25 | Bosch Gmbh Robert | Baugruppenträger für elektrische/elektronische Bauelemente |
| US6750516B2 (en) * | 2001-10-18 | 2004-06-15 | Hewlett-Packard Development Company, L.P. | Systems and methods for electrically isolating portions of wafers |
| US6541712B1 (en) * | 2001-12-04 | 2003-04-01 | Teradyhe, Inc. | High speed multi-layer printed circuit board via |
| US7152312B2 (en) * | 2002-02-11 | 2006-12-26 | Adc Dsl Systems, Inc. | Method for transmitting current through a substrate |
| JP2003338577A (ja) * | 2002-05-21 | 2003-11-28 | Murata Mfg Co Ltd | 回路基板装置 |
| US6977346B2 (en) * | 2002-06-10 | 2005-12-20 | Visteon Global Technologies, Inc. | Vented circuit board for cooling power components |
| TWI233145B (en) * | 2002-09-03 | 2005-05-21 | Toshiba Corp | Semiconductor device |
| JP2004165291A (ja) * | 2002-11-11 | 2004-06-10 | Tokuyama Corp | ビアホール付きセラミック基板及びその製造方法 |
| US7286359B2 (en) * | 2004-05-11 | 2007-10-23 | The U.S. Government As Represented By The National Security Agency | Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing |
| US7786567B2 (en) * | 2004-11-10 | 2010-08-31 | Chung-Cheng Wang | Substrate for electrical device and methods for making the same |
| KR100849455B1 (ko) * | 2005-04-19 | 2008-07-30 | 티디케이가부시기가이샤 | 다층 세라믹 기판 및 그 제조 방법 |
| JP2007031229A (ja) * | 2005-07-28 | 2007-02-08 | Tdk Corp | 窒化アルミニウム基板の製造方法及び窒化アルミニウム基板 |
| US7554193B2 (en) * | 2005-08-16 | 2009-06-30 | Renesas Technology Corp. | Semiconductor device |
| JP4331769B2 (ja) * | 2007-02-28 | 2009-09-16 | Ｔｄｋ株式会社 | 配線構造及びその形成方法並びにプリント配線板 |
-
2007
- 2007-12-11 US US12/001,267 patent/US20090146295A1/en not_active Abandoned
-
2008
- 2008-12-11 CN CN2008801186744A patent/CN101874299B/zh not_active Expired - Fee Related
- 2008-12-11 JP JP2010538144A patent/JP2011507276A/ja active Pending
- 2008-12-11 WO PCT/US2008/086338 patent/WO2009076494A2/en not_active Ceased
- 2008-12-12 TW TW097148703A patent/TW201023307A/zh unknown
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