JP2011501881A - ナノワイヤに基づく光電子デバイス及び対応する工程 - Google Patents
ナノワイヤに基づく光電子デバイス及び対応する工程 Download PDFInfo
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Abstract
【選択図】図9
Description
・基板とナノワイヤとの間の良好な導通状態を確保するために、ナノワイヤは適切なキャリアをドープされる;
・ナノワイヤは、高さhにわたって、ナノワイヤの残りの部分に存在するキャリアとは反対の導電型のキャリアをドープされる;
・ナノワイヤと基板との間の接触は直接的又は間接的に行なわれる;
・電気的接触ゾーンのそれぞれに金属ワイヤが結合される;
・ナノワイヤの上側表面を覆うように、燐光体材料の最終層が堆積される。
・上記少なくとも1つのナノワイヤの周囲に配置される電気的接触ゾーンは、前記ナノワイヤの前記上側表面(20)を露出したままにする導電性材料の層によって形成されている;
・上記少なくとも1つのナノワイヤは、該ナノワイヤの周囲に配置される電気的接触ゾーンにおいて、ナノワイヤの残りの部分に存在するキャリアと反対の導電型のキャリアをドープされる;
・上記ナノワイヤから発する光を白色光に変換するために、上記少なくとも1つのナノワイヤの上側表面を覆う燐光材料の層を含む。
Claims (13)
- ナノワイヤ型半導体に基づく光電子デバイスを製造するための工程であって、
光ビームを放射可能な複数のナノワイヤ(2)が基板(1)上に形成されるステップと、
第1の電気的接触ゾーンが前記基板上に形成されるステップと、
第2の電気的接触ゾーンが前記ナノワイヤ上に形成されるステップと、
を備え、
前記第2の電気的接触ゾーンは、前記ナノワイヤ(2)の周囲且つ前記ナノワイヤと直接接触して、前記ナノワイヤの所定の高さ(h)にわたって且つ前記基板とは反対側にある端部の近くに、及び前記ナノワイヤ間にも提供され、前記ナノワイヤの上側表面(20)は露出することを特徴とする、ナノワイヤ型半導体に基づく光電子デバイスを製造するための工程。 - 前記第2の電気的接触ゾーンは、導電性材料の層を堆積することによって得られる、請求項1に記載の工程。
- ナノワイヤ型半導体に基づく光電子デバイスを製造するために工程であって、
光ビームを放射可能な複数のナノワイヤ(2)を基板(1)上に得るステップと、
前記ナノワイヤ間の隙間を満たすために、オプションで実質的に平坦化される材料の層(3)を堆積するステップと、を含み、
前記ナノワイヤの周囲且つ前記ナノワイヤと直接接触して、前記ナノワイヤの所定の高さ(h)にわたって且つ前記基板とは反対側にある端部上に、及び前記ナノワイヤ間において、導電性材料の層(4)を得るためのステップを含み、前記ナノワイヤの上側表面(20)は露出することを特徴とする、ナノワイヤ型半導体に基づく光電子デバイスを製造するための工程。 - 前記導電性材料の層(4)を得るためのステップは、
前記ナノワイヤの上側端部を所定の高さ(h)にわたって露出させるように、前記材料の層(3)をエッチングすることと、
前記ナノワイヤの前記高さ(h)にわたって導電性材料の層(4)を堆積することと、
前記ナノワイヤ間の隙間を満たすために材料の別の層(5)を堆積し、その後、オプションで平坦化ステップを実施することと、
前記ナノワイヤの前記上側部分を露出させるために、前記別の材料の層(5)をエッチングすることと、
前記ナノワイヤの前記上側表面(20)を露出させるために、前記導電性材料の層(4)をエッチングすることと、
前記ナノワイヤの前記上側表面(20)上に存在する前記導電性材料を除去することと、最後に、
前記導電性材料上に依然として存在する前記他の材料の層(51)を除去することと、
を含む、請求項3に記載の工程。 - 前記基板(1)と前記ナノワイヤ(2)との間の良好な導通状態を確保するために、前記ナノワイヤは適切なキャリアをドープされる、請求項1〜4のいずれか一項に記載の工程。
- 前記ナノワイヤ(2)は、前記高さ(h)にわたって、前記ナノワイヤの残りの部分に存在するキャリアとは反対の導電型のキャリアをドープされる、請求項1〜5のいずれか一項に記載の工程。
- 前記ナノワイヤと前記基板との間の接触は直接的又は間接的に行なわれる、請求項1〜6のいずれか一項に記載の工程。
- 前記電気的接触ゾーンのそれぞれに金属ワイヤ(6、7)が結合される、請求項1〜7のいずれか一項に記載の工程。
- 前記ナノワイヤの前記上側表面(20)を覆うように、燐光体材料の最終層(8)が堆積される、請求項1〜8のいずれか一項に記載の工程。
- 導波路構造を有すると共に光ビームを放射することができる少なくとも1つのナノワイヤ型半導体と、
2つの電気的接触ゾーンと、を備え、
前記ゾーンのうちの一方は、前記少なくとも1つのナノワイヤ(2)の周囲において、前記少なくとも1つのナノワイヤと直接接触し且つ前記ナノワイヤの端部のうちの一方の近くに配置され、
前記ナノワイヤの上側表面(20)は電気的接触に関与しない、光電子デバイス。 - 前記少なくとも1つのナノワイヤの周囲に配置される前記電気的接触ゾーンは、前記ナノワイヤの前記上側表面(20)を露出したままにする導電性材料の層(4)によって形成されている、請求項10に記載の光電子デバイス。
- 前記少なくとも1つのナノワイヤ(2)は、該ナノワイヤの周囲に配置される前記電気的接触ゾーンにおいて、前記ナノワイヤの残りの部分に存在するキャリアと反対の導電型のキャリアをドープされる、請求項10又は11に記載のデバイス。
- 前記ナノワイヤから発する光を白色光に変換するために、前記少なくとも1つのナノワイヤ(2)の前記上側表面(20)を覆う燐光材料の層(8)を含む、請求項10〜12のいずれか一項に記載のデバイス。
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FR0707385A FR2922685B1 (fr) | 2007-10-22 | 2007-10-22 | Dispositif optoelectronique a base de nanofils et procedes correspondants |
FR07/07385 | 2007-10-22 | ||
PCT/FR2008/001484 WO2009087319A1 (fr) | 2007-10-22 | 2008-10-22 | Dispositif optoelectronique a base de nanofils et procedes correspondants |
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EP (1) | EP2203939B1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013502715A (ja) * | 2009-08-18 | 2013-01-24 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 発光ダイオードをベースとした発光デバイスの製造方法 |
JP2015507850A (ja) * | 2012-01-20 | 2015-03-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 発光ダイオードチップ |
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Also Published As
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US8487340B2 (en) | 2013-07-16 |
FR2922685A1 (fr) | 2009-04-24 |
FR2922685B1 (fr) | 2011-02-25 |
WO2009087319A1 (fr) | 2009-07-16 |
US20110180776A1 (en) | 2011-07-28 |
EP2203939A1 (fr) | 2010-07-07 |
EP2203939B1 (fr) | 2016-10-19 |
JP5490007B2 (ja) | 2014-05-14 |
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