JP2006303508A - 超格子のナノデバイス及びその製造方法 - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L31/035236—Superlattices; Multiple quantum well structures
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Abstract
【解決手段】本発明に係わる超格子のナノデバイスは、少なくとも一つの構成ユニットを含む。該構成ユニットは、基体と該基体に形成される一次元のナノの構成を含む第一電極と、該基体に形成され、前記一次元のナノ構成を囲う機能層と、該第一電極と電気絶縁し、前記機能層を囲う第二電極と、を含む。一次元のナノ構成の側面に多くの薄層の膜を積層することを通じるから、二次元の超格子の構成を製造する成熟の技術を利用でき、その製造難度が下がる。しかも、気相−液相−固相成長法でナノワイヤーを成長させる技術では、超格子の材料と金属の触媒が合金又は固溶体を形成する必要がある問題を解決できるから、種類が多い超格子のナノデバイスを製造できる。
【選択図】図3
Description
1.ナノワイヤーの成長過程中において、半導体材料と触媒(通常、金などの金属である)が高温で、合金又は固溶体を形成する必要があるから、半導体材料の選ぶ範囲が制限される。あるいは、ある超格子の材料を製造するために、特別な金属触媒を使わなければならない。これによって、多くの応用価値を持つ二次元の超格子の材料は、超格子のナノワイヤーの材料に使われることが困難になった。
2.前記直列型の超格子のナノワイヤーの製造方法は、現在、気相−液相−固相成長法を使うことが多い。二次元の超格子の材料を製造する従来の技術を利用することが困難である。そして、気相−液相−固相成長法で直列型の超格子のナノワイヤーを製造する時には、各種材料の成長の高さを精確にコントロールする必要がある。これによって、超格子のナノワイヤーの製造難度が大きくなった。
「物理隔月刊行物」、一次元のナノ材料、陳貴賢、呉季珍、2001年12月、第23巻、第六期
そのうち、第一電極100は、珪素の基体101及び該珪素の基体101に形成される一次元のナノ構成からなり、本実施例では、該一次元のナノ構成は珪素のナノワイヤー102である。
10、100 第一電極
11、101 珪素の基体
12、102 珪素のナノワイヤー
20、200 機能層
21、201 第一薄膜
22、202 第二薄膜
30、300 第二電極
40、400 絶縁層
50、500 構成のユニット
Claims (7)
- 少なくとも一つの構成ユニットを含む超格子のナノデバイスにおいて、
該構成ユニットは、基体と該基体に形成される一次元のナノ構成を含む第一電極と、該基体に形成され、前記一次元のナノ構成を囲う機能層と、前記第一電極と電気絶縁し、前記機能層を囲う第二電極と、を含むことを特徴とする超格子のナノデバイス。 - 前記機能層は、少なくとも一種の薄膜からなる構成であることを特徴とする請求項1に記載の超格子のナノデバイス。
- 前記機能層は、半導体化合物の超格子の単層薄膜の構成、IV−IV族、III−V族、II−VI族、IV−VI族の半導体の超格子の複数層の薄膜構成、強磁性−非磁性−強磁性、強磁性−反強磁性−強磁性、強磁性−常磁性−強磁性の超格子の複数層薄膜構成、スピンバルブ構造、巨大磁気抵抗、超巨大磁気抵抗構成及び希釈磁性半導体の超格子の複数層の薄膜構成のうち少なくともいずれか1つを含むことを特徴とする請求項1に記載の超格子のナノデバイス。
- 前記第一電極と第二電極は、前記絶縁層で電気絶縁され、該絶縁層が前記基体に形成され、前記一次元のナノ構成を囲い、前記第二電極が該絶縁層に形成されることを特徴とする請求項1に記載の超格子のナノデバイス。
- 前記絶縁層は、前記機能層を囲うことを特徴とする請求項4に記載の超格子のナノデバイス。
- 前記機能層は、前記絶縁層に形成されることを特徴とする請求項4に記載の超格子のナノデバイス。
- 基体を提供し、該基体に一次元のナノ構成を形成する工程と、
前記基体と前記一次元のナノ構成を第一電極とし、該基体に機能層を形成し、該機能層が一次元のナノ構成を囲う工程と、
前記基体に絶縁層を形成し、該絶縁層が前記一次元のナノ構成を囲う工程と、
前記絶縁層に第二電極を形成し、該第二電極が前記機能層を囲う工程と、を含むことを特徴とする超格子のナノデバイスの製造方法。
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CN200510034359.1 | 2005-04-22 | ||
CNA2005100343591A CN1850580A (zh) | 2005-04-22 | 2005-04-22 | 超晶格纳米器件及其制作方法 |
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US7679077B2 (en) | 2010-03-16 |
US20070057248A1 (en) | 2007-03-15 |
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CN1850580A (zh) | 2006-10-25 |
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