JP2010535406A - プラズモン増強による電磁波放射装置およびその製造方法 - Google Patents
プラズモン増強による電磁波放射装置およびその製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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Abstract
Description
Claims (10)
- 内層(110)と、前記内層の少なくとも一部を囲む外層(112)とを有する多層コア(106)と、
前記外層の少なくとも一部を囲むように構成される金属デバイス層(108)と、
前記内層と電気通信を行う下部導電層(118)と前記金属デバイス層と電気通信を行う上部導電層(122)とを有し、これにより、前記下部導電層および前記上部導電層間に適切な電圧が印加されると露出部分が表面プラズモン増強による電磁波を放射する基板(104)とを備えることを特徴とする電磁波放射装置(100)。 - 前記多層コア(106)が、
p型半導体である前記内層(110)およびn型半導体である前記外層(112)、又はn型半導体である前記内層(110)およびp型半導体である前記外層(112)のいずれかをさらに備えることを特徴とする請求項1に記載の装置。 - 前記内層(110)および前記外層(112)間に配置されることにより、空乏領域であるか又は真性半導体からなっていてもよい中間層(114)をさらに備えることを特徴とする請求項1に記載の装置。
- 前記上部導電層(122)は金属層もしくは半導体層のいずれかをさらに備えることを特徴とする請求項1に記載の装置。
- 前記下部導電層(118)はシリコン・オン・インシュレータ基板のSi層もしくは半導体層のいずれかをさらに備えることを特徴とする請求項1に記載の装置。
- 半導体基板(118)上に、上面および底面を有する誘電層(120)を前記上面および底面が前記半導体基板に接続されるよう形成し、
前記誘電層の前記上面上に、前記誘電層を介して伸長し、前記半導体基板と電気的に接触する内層および前記内層の少なくとも一部を囲む外層を含む多層コア(106)を形成し、
前記多層コア上に金属層(108)を蒸着することを含むことを特徴とする電磁波放射装置(100)の製造方法。 - 前記電磁波放射装置を平坦化して、前記内層、前記外層、および前記金属層の一部を露出し、前記多層コアの露出部分を形成することにより上面を形成することを更に含むことを特徴とする請求項6に記載の方法。
- 前記多層コアを形成することは、
前記誘電層(120)に開口部(202)を形成し、
前記開口部内にシード材料(402)を蒸着し、
前記シード材料が前記開口部内で核として機能し柱状の前記内層(110)を形成するための前記開口部内に、前記柱状の前記内層(110)を形成し、
前記外層(112)を蒸着することとをさらに含むことを特徴とする請求項10に記載の方法。 - 前記金属層上に、化学的蒸着もしくは物理的蒸着のいずれかを使用することにより金属、半導体、もしくは誘電材料からなる任意選択の層を蒸着することをさらに含むことを特徴とする請求項8に記載の方法。
- 前記開口部内に柱状の前記内層を形成することは、気相−液相−固相処理をさらに含むことを特徴とする請求項14に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/881,266 US7781853B2 (en) | 2007-07-26 | 2007-07-26 | Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same |
PCT/US2008/008716 WO2009017604A1 (en) | 2007-07-26 | 2008-07-16 | Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same |
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Publication Number | Publication Date |
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JP2010535406A true JP2010535406A (ja) | 2010-11-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010518194A Pending JP2010535406A (ja) | 2007-07-26 | 2008-07-16 | プラズモン増強による電磁波放射装置およびその製造方法 |
Country Status (6)
Country | Link |
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US (1) | US7781853B2 (ja) |
JP (1) | JP2010535406A (ja) |
KR (1) | KR20100045977A (ja) |
CN (1) | CN101765764B (ja) |
DE (1) | DE112008002003B4 (ja) |
WO (1) | WO2009017604A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012531751A (ja) * | 2009-06-26 | 2012-12-10 | カリフォルニア インスティチュート オブ テクノロジー | パッシベートされたシリコンナノワイヤーの製造方法およびこれにより得られるデバイス |
US9005548B2 (en) | 2009-02-25 | 2015-04-14 | California Institute Of Technology | Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars |
US9234872B2 (en) | 2009-11-23 | 2016-01-12 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
US9406823B2 (en) | 2009-11-19 | 2016-08-02 | California Institute Of Technology | Methods for fabricating self-aligning semiconductor hetereostructures using nanowires |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8237151B2 (en) * | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
US20120032140A1 (en) * | 2009-09-18 | 2012-02-09 | Jingjing Li | Light-emitting diode including a metal-dielectric-metal structure |
CN110764188B (zh) * | 2019-10-23 | 2021-01-05 | 天津大学 | 一种铌酸锂脊型光波导的制备方法 |
CN114442340A (zh) * | 2022-01-17 | 2022-05-06 | 哈尔滨工业大学 | 一种基于p-n结的近场辐射热流调制器 |
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2007
- 2007-07-26 US US11/881,266 patent/US7781853B2/en active Active
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2008
- 2008-07-16 CN CN2008801006296A patent/CN101765764B/zh active Active
- 2008-07-16 WO PCT/US2008/008716 patent/WO2009017604A1/en active Application Filing
- 2008-07-16 KR KR1020107001795A patent/KR20100045977A/ko active Search and Examination
- 2008-07-16 DE DE112008002003.5T patent/DE112008002003B4/de not_active Expired - Fee Related
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JPS63107075A (ja) * | 1986-10-22 | 1988-05-12 | Res Dev Corp Of Japan | 半導体発光素子 |
JPH0597598A (ja) * | 1990-02-23 | 1993-04-20 | Thomson Csf | 結晶ホイスカの制御成長方法と、該方法の尖頭超小型カソード製造への応用 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9005548B2 (en) | 2009-02-25 | 2015-04-14 | California Institute Of Technology | Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars |
US9390936B2 (en) | 2009-02-25 | 2016-07-12 | California Institute Of Technology | Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars |
JP2012531751A (ja) * | 2009-06-26 | 2012-12-10 | カリフォルニア インスティチュート オブ テクノロジー | パッシベートされたシリコンナノワイヤーの製造方法およびこれにより得られるデバイス |
US9406823B2 (en) | 2009-11-19 | 2016-08-02 | California Institute Of Technology | Methods for fabricating self-aligning semiconductor hetereostructures using nanowires |
US9234872B2 (en) | 2009-11-23 | 2016-01-12 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
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Publication number | Publication date |
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CN101765764B (zh) | 2012-05-30 |
US7781853B2 (en) | 2010-08-24 |
DE112008002003T5 (de) | 2010-11-04 |
KR20100045977A (ko) | 2010-05-04 |
DE112008002003B4 (de) | 2017-03-16 |
CN101765764A (zh) | 2010-06-30 |
US20090028493A1 (en) | 2009-01-29 |
WO2009017604A1 (en) | 2009-02-05 |
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