JP2011501815A5 - - Google Patents
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- Publication number
- JP2011501815A5 JP2011501815A5 JP2010526390A JP2010526390A JP2011501815A5 JP 2011501815 A5 JP2011501815 A5 JP 2011501815A5 JP 2010526390 A JP2010526390 A JP 2010526390A JP 2010526390 A JP2010526390 A JP 2010526390A JP 2011501815 A5 JP2011501815 A5 JP 2011501815A5
- Authority
- JP
- Japan
- Prior art keywords
- solution
- acrylate
- methacrylate
- polymer
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 125000004185 ester group Chemical group 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 125000004036 acetal group Chemical group 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229940118056 cresol / formaldehyde Drugs 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007524 organic acids Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/860,675 US8715918B2 (en) | 2007-09-25 | 2007-09-25 | Thick film resists |
| US11/860,675 | 2007-09-25 | ||
| PCT/IB2008/002593 WO2009040661A2 (en) | 2007-09-25 | 2008-09-24 | Thick film resists |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011501815A JP2011501815A (ja) | 2011-01-13 |
| JP2011501815A5 true JP2011501815A5 (https=) | 2011-10-13 |
| JP5412690B2 JP5412690B2 (ja) | 2014-02-12 |
Family
ID=40289141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526390A Active JP5412690B2 (ja) | 2007-09-25 | 2008-09-24 | 厚膜レジスト |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8715918B2 (https=) |
| EP (1) | EP2203783B1 (https=) |
| JP (1) | JP5412690B2 (https=) |
| KR (1) | KR101505482B1 (https=) |
| CN (1) | CN101809502B (https=) |
| TW (1) | TWI476527B (https=) |
| WO (1) | WO2009040661A2 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4893270B2 (ja) * | 2006-11-29 | 2012-03-07 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| US8989107B2 (en) | 2009-04-30 | 2015-03-24 | Qualcomm Incorporated | Activation deactivation of secondary UL carrier in DC HSUPA |
| JP5783142B2 (ja) * | 2011-07-25 | 2015-09-24 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
| KR20130023560A (ko) * | 2011-08-29 | 2013-03-08 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 미세 패턴의 형성 방법 |
| JP2013079230A (ja) | 2011-09-23 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | カリックスアレーンおよびこれを含むフォトレジスト組成物 |
| JP6136355B2 (ja) * | 2012-02-27 | 2017-05-31 | 住友化学株式会社 | レジストパターンの製造方法 |
| US9012126B2 (en) * | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
| JP6287466B2 (ja) * | 2013-04-08 | 2018-03-07 | Jsr株式会社 | レジスト組成物及びレジストパターン形成方法 |
| US9291909B2 (en) * | 2013-05-17 | 2016-03-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition comprising a polymeric thermal acid generator and processes thereof |
| JP6292059B2 (ja) * | 2013-08-13 | 2018-03-14 | Jsr株式会社 | 基板の加工方法 |
| US10047185B2 (en) * | 2014-03-20 | 2018-08-14 | Dic Corporation | Novolac-type phenolic hydroxyl group-containing resin, production method therefor, curable composition, composition for resist, and color resist |
| KR102261808B1 (ko) * | 2016-08-09 | 2021-06-07 | 리지필드 액퀴지션 | 환경적으로 안정한 후막성 화학증폭형 레지스트 |
| TWI763715B (zh) * | 2016-10-07 | 2022-05-11 | 日商迪愛生股份有限公司 | 含酚性羥基之樹脂及抗蝕劑材料 |
| TWI816671B (zh) * | 2017-04-25 | 2023-10-01 | 德商馬克專利公司 | 用於產生底切圖樣輪廓之負型光阻調配物以及使光阻組合物成像之方法和用於使基板上之圖樣化光阻劑金屬化之剝離方法 |
| KR102230622B1 (ko) * | 2017-11-24 | 2021-03-22 | 주식회사 엘지화학 | 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름 |
| CN108303851B (zh) * | 2018-01-05 | 2019-09-10 | 湖北固润科技股份有限公司 | 包含聚对羟基苯乙烯类氧杂环丁烷树脂作为成膜树脂的光刻胶组合物 |
| CN118377192A (zh) | 2018-05-24 | 2024-07-23 | 默克专利股份有限公司 | 基于酚醛清漆/dnq的化学增幅型光致抗蚀剂 |
| JP7475111B2 (ja) * | 2018-11-14 | 2024-04-26 | 東京応化工業株式会社 | レジストパターン形成方法、レジスト組成物及びその製造方法 |
| US20200356001A1 (en) * | 2019-05-10 | 2020-11-12 | Rohm And Haas Electronic Materials Llc | Photoresist compositions and methods of forming resist patterns with such compositions |
| US20210108065A1 (en) * | 2019-10-15 | 2021-04-15 | Rohm And Haas Electronic Materials Llc | Polymers and photoresist compositions |
| JP7539466B2 (ja) * | 2019-11-19 | 2024-08-23 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法 |
| US20220365432A1 (en) * | 2019-11-25 | 2022-11-17 | Merck Patent Gmbh | Chemically amplified photoresist |
| CN121079290A (zh) | 2023-04-27 | 2025-12-05 | 默克专利股份有限公司 | 光活性化合物 |
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| JP4249095B2 (ja) * | 2004-02-20 | 2009-04-02 | 東京応化工業株式会社 | パターン形成材料用基材、ポジ型レジスト組成物およびレジストパターン形成方法 |
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| US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
| JP2008089871A (ja) * | 2006-09-29 | 2008-04-17 | Fujifilm Corp | レジスト組成物およびこれを用いたパターン形成方法 |
| JP4893270B2 (ja) * | 2006-11-29 | 2012-03-07 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP2009063823A (ja) * | 2007-09-06 | 2009-03-26 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物、積層体およびパターン形成方法 |
-
2007
- 2007-09-25 US US11/860,675 patent/US8715918B2/en active Active
-
2008
- 2008-08-12 TW TW097130707A patent/TWI476527B/zh active
- 2008-09-24 JP JP2010526390A patent/JP5412690B2/ja active Active
- 2008-09-24 KR KR1020107008310A patent/KR101505482B1/ko active Active
- 2008-09-24 WO PCT/IB2008/002593 patent/WO2009040661A2/en not_active Ceased
- 2008-09-24 EP EP08833151.7A patent/EP2203783B1/en active Active
- 2008-09-24 CN CN200880108713.2A patent/CN101809502B/zh active Active
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