JP2011228571A - 充填用基材及びそれを用いた充填方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 title claims abstract description 26
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- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
【解決手段】充填用基材5は、第1金属層21と第2金属層22とを含む金属層2を支持基体1の一面上に設けた構造になっている。第1金属層21は、その融点よりも低い温度で溶融可能なナノ金属粒子の集合したものでなり、第2金属層22は、その融点が第1金属層21の融点よりも低い金属粒子の集合したものでなる。充填用基材5の一面側を、微細空間30の開口する基板3の一面上に重ねる。そして、充填用基材5を加熱し、かつ、加圧F1して、金属層2の溶融物を微細空間30内に充填する。
【選択図】図2
Description
2 金属層
3 基板
4 支持具
20 溶融金属
21 第1金属層
22 第2金属層
Claims (6)
- 支持基体と、金属層とを含む充填用基材であって、
前記金属層は、第1金属層と第2金属層とを含み、前記支持基体の一面上に設けられており、
前記第1金属層は、その融点よりも低い温度で溶融可能なナノ金属粒子の集合したものでなり、
前記第2金属層は、その融点が前記第1金属層の前記融点よりも低い金属粒子の集合したものでなる、
充填用基材。 - 請求項1に記載されて充填用基材であって、前記第1金属層及び前記第2金属層の組み合わせを複数組有する充填用基材。
- 請求項1又は2に記載された充填用基材であって、前記第1金属層は、前記膜厚が20nm以下である、充填用基材。
- 請求項1乃至3の何れかに記載された充填用基材であって、前記第1金属層及び前記第2金属層は、Ag、Cu、Au、Pt、Ni、Pd、Ir、W、Mo、Ta、Hf、Ru、Rh、Sc、Zr、Os、Y、V、Fe、Co、Cr、Mn、Nb、Al、Zn、Ga、Sn、In、Bi、又は半導体配線導体用金属の群から選択された少なくとも1種を含む、充填用基材。
- 基板に設けられた微細空間内に金属を充填し、硬化させる方法であって、
請求項1乃至4の何れかに記載された前記充填用基材を用い、前記充填用基材の前記一面側を、前記微細空間の開口する前記基板の一面上に真空張り合わせして重ね、
前記充填用基材を加熱し、かつ、加圧して、前記金属層の溶融物を前記微細空間内に充填する、
工程を含む方法。 - 請求項5に記載された方法であって、前記金属層の溶融物を前記微細空間内に充填した後、硬化するまで、前記加圧を維持する、方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010098664A JP5250582B2 (ja) | 2010-04-22 | 2010-04-22 | 充填用基材及びそれを用いた充填方法 |
US13/084,847 US8377565B2 (en) | 2010-04-22 | 2011-04-12 | Filling material and filling method using the same |
EP11250467A EP2381469A1 (en) | 2010-04-22 | 2011-04-13 | Filling material and filling method using the same |
KR1020110037191A KR101660546B1 (ko) | 2010-04-22 | 2011-04-21 | 충전용 기재 및 그것을 이용한 충전방법 |
CN201110100437.9A CN102237325B (zh) | 2010-04-22 | 2011-04-21 | 填充用基材及使用了该基材的填充方法 |
TW100113830A TWI463605B (zh) | 2010-04-22 | 2011-04-21 | 填充用基材及使用其之填充方法 |
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JP2010098664A JP5250582B2 (ja) | 2010-04-22 | 2010-04-22 | 充填用基材及びそれを用いた充填方法 |
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JP2011228571A true JP2011228571A (ja) | 2011-11-10 |
JP5250582B2 JP5250582B2 (ja) | 2013-07-31 |
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JP2010098664A Active JP5250582B2 (ja) | 2010-04-22 | 2010-04-22 | 充填用基材及びそれを用いた充填方法 |
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Country | Link |
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US (1) | US8377565B2 (ja) |
EP (1) | EP2381469A1 (ja) |
JP (1) | JP5250582B2 (ja) |
KR (1) | KR101660546B1 (ja) |
CN (1) | CN102237325B (ja) |
TW (1) | TWI463605B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013115177A (ja) * | 2011-11-28 | 2013-06-10 | Napura:Kk | 微細空間内に機能部分を形成する方法 |
JP2013197351A (ja) * | 2012-03-21 | 2013-09-30 | Sumitomo Precision Prod Co Ltd | 充填用金属シート及び充填用金属シートを用いた金属充填方法 |
JP2013201163A (ja) * | 2012-03-23 | 2013-10-03 | Sumitomo Precision Prod Co Ltd | 金属充填装置、金属充填方法 |
JP5450780B1 (ja) * | 2012-12-21 | 2014-03-26 | 有限会社 ナプラ | 微細空間内に導体を形成する方法 |
JP5859162B1 (ja) * | 2015-08-06 | 2016-02-10 | 住友精密工業株式会社 | 金属充填装置および金属充填方法 |
JP2018056227A (ja) * | 2016-09-27 | 2018-04-05 | 東京エレクトロン株式会社 | ニッケル配線の製造方法 |
JP7484437B2 (ja) | 2020-06-02 | 2024-05-16 | 株式会社レゾナック | 金属粒子フィルム、金属粒子フィルムの製造方法、及び、貫通電極を有する基体の製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101168719B1 (ko) * | 2011-07-12 | 2012-07-30 | 한국생산기술연구원 | 가압유닛이 구비된 웨이퍼 비아 솔더 필링장치 및 이를 이용한 웨이퍼 비아 솔더 필링방법 |
CN102569251B (zh) * | 2012-02-22 | 2014-07-02 | 华进半导体封装先导技术研发中心有限公司 | 三维封装用金属间化合物填充的垂直通孔互连结构及制备方法 |
US9305866B2 (en) | 2014-02-25 | 2016-04-05 | International Business Machines Corporation | Intermetallic compound filled vias |
JP7119583B2 (ja) * | 2018-05-29 | 2022-08-17 | Tdk株式会社 | プリント配線板およびその製造方法 |
CN110676214B (zh) * | 2019-09-24 | 2022-04-12 | 浙江集迈科微电子有限公司 | 一种金属填充弯管的垂直互联方法 |
CN110648962A (zh) * | 2019-09-24 | 2020-01-03 | 浙江集迈科微电子有限公司 | 一种弯管互联金属填充方法 |
JP6890201B1 (ja) * | 2020-08-27 | 2021-06-18 | 有限会社 ナプラ | 接合材用合金インゴット |
CN113543527B (zh) * | 2021-07-09 | 2022-12-30 | 广东工业大学 | 载板填孔工艺的填充基材选型方法及载板填孔工艺 |
CN116322279A (zh) * | 2021-12-17 | 2023-06-23 | 腾讯科技(深圳)有限公司 | 硅片及其硅孔的填充方法 |
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- 2011-04-12 US US13/084,847 patent/US8377565B2/en active Active
- 2011-04-13 EP EP11250467A patent/EP2381469A1/en not_active Withdrawn
- 2011-04-21 TW TW100113830A patent/TWI463605B/zh not_active IP Right Cessation
- 2011-04-21 KR KR1020110037191A patent/KR101660546B1/ko active IP Right Grant
- 2011-04-21 CN CN201110100437.9A patent/CN102237325B/zh active Active
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JP2002368082A (ja) * | 2001-06-08 | 2002-12-20 | Fujikura Ltd | 微細空間への金属充填方法および装置 |
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JP5450780B1 (ja) * | 2012-12-21 | 2014-03-26 | 有限会社 ナプラ | 微細空間内に導体を形成する方法 |
JP5859162B1 (ja) * | 2015-08-06 | 2016-02-10 | 住友精密工業株式会社 | 金属充填装置および金属充填方法 |
WO2017022138A1 (ja) * | 2015-08-06 | 2017-02-09 | 住友精密工業株式会社 | 金属充填装置および金属充填方法 |
JP2018056227A (ja) * | 2016-09-27 | 2018-04-05 | 東京エレクトロン株式会社 | ニッケル配線の製造方法 |
JP7484437B2 (ja) | 2020-06-02 | 2024-05-16 | 株式会社レゾナック | 金属粒子フィルム、金属粒子フィルムの製造方法、及び、貫通電極を有する基体の製造方法 |
Also Published As
Publication number | Publication date |
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CN102237325B (zh) | 2015-05-20 |
CN102237325A (zh) | 2011-11-09 |
US8377565B2 (en) | 2013-02-19 |
EP2381469A1 (en) | 2011-10-26 |
KR20110118093A (ko) | 2011-10-28 |
KR101660546B1 (ko) | 2016-09-27 |
TWI463605B (zh) | 2014-12-01 |
JP5250582B2 (ja) | 2013-07-31 |
TW201203460A (en) | 2012-01-16 |
US20110262762A1 (en) | 2011-10-27 |
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