JP5815880B2 - 少なくとも一種の金属粉末から成る焼結可能な層及びはんだ層を含む層系と支持体シートとから成る層結合体 - Google Patents
少なくとも一種の金属粉末から成る焼結可能な層及びはんだ層を含む層系と支持体シートとから成る層結合体 Download PDFInfo
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- JP5815880B2 JP5815880B2 JP2014532329A JP2014532329A JP5815880B2 JP 5815880 B2 JP5815880 B2 JP 5815880B2 JP 2014532329 A JP2014532329 A JP 2014532329A JP 2014532329 A JP2014532329 A JP 2014532329A JP 5815880 B2 JP5815880 B2 JP 5815880B2
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- layer
- sinterable
- solder
- support sheet
- sheet
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
- B23K35/0238—Sheets, foils layered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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Description
本発明の対象は、少なくとも一つの支持体シート及びその支持体シート上に被着されている層系を含んでいる層結合体、特に結合相手としての電子コンポーネントを結合させるための層結合体である。本発明によれば、層系は、支持体シート上に被着されており、且つ、少なくとも一種の金属粉末を含有する、少なくとも一つの焼結可能な層と、その焼結可能な層上に被着されているはんだ層とを含んでいる。
−少なくとも一種の金属粉末を含有する焼結可能な層を支持体シート上に被着させるステップと、
−焼結可能な層を乾燥させるステップと、
−はんだ層を焼結可能な層上に被着させるか、
又は、
−はんだ層を焼結可能な層上に、特に少なくとも一種の金属粉末を含有する焼結成形体上に被着させるステップと、
−焼結可能な層及びはんだ層から成る層系を支持体シート上に被着させるステップとを備えている。
−層結合体を少なくとも一つの電子モジュール上に被着させるステップと、
−少なくとも一つのモジュールと層系との間の固着部を、加熱及び/又は圧力供給によって形成するステップと、
−少なくとも一つのモジュールを、そのモジュールに固着されている層系と共に、支持体シートから取り外すステップと、
−層系の、固着されたモジュールに対向する面を結合相手に被着させるステップと、
−結合相手と層系との間に固着部を形成し、オプションとして、モジュールと層系との間の固着部を熱処理及び/又は圧力供給によって厚くするステップと、
を備えている。
Claims (22)
- 層結合体(10)において、
少なくとも一つの支持体シート(11)と、
前記支持体シート(11)上に被着されている層系(12)とを含み、
前記層系(12)は、
前記支持体シート(11)上に被着されており、且つ、少なくとも一種の金属粉末を含有する、少なくとも一つの焼結可能な層(13)と、
該焼結可能な層(13)上に被着されているはんだ層(14)とを含み、
前記層系(12)は前記支持体シート(11)から取り外し可能である、
ことを特徴とする、層結合体(10)。 - 前記はんだ層(14)の材料は、SnCu,SnAg,SnAu,SnBi,SnNi,SnZn,SnIn,CuNi,CuAg,AgBi,ZnAl,BiIn,InAg,InGa、又はそれらの混合物から成る3元合金又は4元合金のグループから選択されている、請求項1に記載の層結合体。
- 前記はんだ層(14)は、ベースはんだと、AgX合金又はCuX合金又はNiX合金との混合物から成る反応はんだから形成される、但し、前記AgX合金又は前記CuX合金又は前記NiX合金の成分Xは、B,Mg,Al,Si,Ca,Se,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,Y,Zr,Nb,Mo,Ag,In,Sn,Sb,Ba,Hf,Ta,W,Au,Bi,La,Ce,Pr,Nd,Gd,Dy,Sm,Er,Tb,Eu,Ho,Tm,Yb及びLuから成るグループから選択されており、且つ、前記AgX合金又は前記CuX合金又は前記NiX合金の融点は前記ベースはんだの融点よりも高い、請求項1又は2に記載の層結合体。
- 前記焼結可能な層(13)は、銀又は銀合金、銅又は銅合金、並びに、溶剤から成る、請求項1乃至3のいずれか一項に記載の層結合体。
- 前記焼結可能な層(13)は5μmから300μmの間の層厚を有する、請求項1乃至4のいずれか一項に記載の層結合体。
- 前記焼結可能な層(13)は5μmから100μmの間の層厚を有する、請求項5に記載の層結合体。
- 前記焼結可能な層(13)は10μmから50μmの間の層厚を有する、請求項5又は6に記載の層結合体。
- 前記支持体シート(11)は、10μmから200μmの間の厚さを有する、ポリエステルシート、PETシート、PEシート又はPPシートである、請求項1乃至7のいずれか一項に記載の層結合体。
- 前記支持体シート(11)は、10μmから150μmの間の厚さを有する、ポリエステルシート、PETシート、PEシート又はPPシートである、請求項8に記載の層結合体。
- 前記支持体シート(11)は、20μmから100μmの間の厚さを有する、ポリエステルシート、PETシート、PEシート又はPPシートである、請求項8又は9に記載の層結合体。
- 前記焼結可能な層(13)は複数の別個の焼結可能な成形体(13a,13b,13c,13d,...)として前記支持体シート上に配置されており、前記複数の別個の焼結可能な成形体(13a,13b,13c,13d,...)の上にはそれぞれはんだ層(14a,14b,14c,14d,...)が配置されている、請求項1乃至10のいずれか一項に記載の層結合体。
- 前記はんだ層(14)は前記焼結可能な層(13)に少なくとも部分的に浸透している、請求項1乃至11のいずれか一項に記載の層結合体。
- 前記層結合体(10)は、結合相手としての電子コンポーネントを結合させるための層結合体である、請求項1乃至12のいずれか一項に記載の層結合体。
- 層結合体(10)を製造する方法において、
少なくとも一種の金属粉末を含有する焼結可能な層(13)を支持体シート(11)上に被着させるステップと、
前記焼結可能な層(13)を乾燥させるステップと、
はんだ層(14)を前記焼結可能な層(13)上に被着させるステップと、
を備えており、
前記焼結可能な層(13)及び前記はんだ層(14)から成る層系(12)は前記支持体シート(11)から取り外し可能である、
ことを特徴とする、方法。 - 前記乾燥を、50℃から200℃の間の温度において実施する、請求項14に記載の方法。
- 前記乾燥を、100℃から175℃の間の温度において実施する、請求項15に記載の方法。
- 前記乾燥を、325℃までの予備焼結と共に実施する、請求項14に記載の方法。
- 層結合体(10)を製造する方法において、
少なくとも一種の金属粉末を含有する焼結可能な層(13)と、はんだ層(14)とから成る層系(12)の当該焼結可能な層(13)を支持体シート(11)上に被着させるステップ、
を備えており、
前記層系(12)は前記支持体シート(11)から取り外し可能である、
ことを特徴とする、方法。 - 前記焼結可能な層(13)を、前記支持体シートへの被着の前又は後に、複数の別個の焼結可能な成形体(13a,13b,13c,13d,...)へと分割する、請求項14乃至18のいずれか一項に記載の方法。
- 請求項1乃至13のいずれか一項に記載の層結合体(10)を含む、回路装置。
- 前記回路装置は、自動車大量生産に関する電子回路装置のための回路装置である、請求項20に記載の回路装置。
- 電子モジュールのための結合方法における、請求項1乃至13のいずれか一項に記載の層結合体(10)の使用方法において、
層結合体(10)を少なくとも一つの電子モジュール(15)上に被着させるステップと、
前記少なくとも一つのモジュール(15)と前記層系(12)との間の固着部を、加熱又は圧力供給によって形成するステップと、
前記少なくとも一つのモジュール(15)を、該モジュール(15)に固着されている前記層系(12)と共に、前記支持体シート(11)から取り外すステップと、
前記層系(12)の、固着された前記モジュールとは反対側の面を、結合相手(16)に被着させるステップと、
前記結合相手(16)と前記層系(12)との間に固着部を形成するステップと、
を備えていることを特徴とする、電子モジュールのための結合方法における、請求項1乃至13のいずれか一項に記載の層結合体(10)の使用方法。
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DE201110083926 DE102011083926A1 (de) | 2011-09-30 | 2011-09-30 | Schichtverbund aus einer Trägerfolie und einer Schichtanordnung umfassend eine sinterbare Schicht aus mindestens einem Metallpulver und eine Lotschicht |
DE102011083926.7 | 2011-09-30 | ||
PCT/EP2012/068657 WO2013045364A2 (de) | 2011-09-30 | 2012-09-21 | Schichtverbund aus einer trägerfolie und einer schichtanordnung umfassend eine sinterbare schicht aus mindestens einem metallpulver und eine lotschicht |
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DE102014109766B3 (de) * | 2014-07-11 | 2015-04-02 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines Substratadapters, Substratadapter und Verfahren zum Kontaktieren eines Halbleiterelements |
CN104588646A (zh) * | 2014-12-30 | 2015-05-06 | 天龙钨钼(天津)有限公司 | 一种制备cpc层状复合材料的方法及一种cpc层状复合材料 |
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US9683278B2 (en) * | 2015-06-08 | 2017-06-20 | Infineon Technologies Ag | Diffusion solder bonding using solder preforms |
JP6858520B2 (ja) * | 2015-09-30 | 2021-04-14 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
CN105517422A (zh) * | 2016-01-15 | 2016-04-20 | 深圳市金凯新瑞光电股份有限公司 | 一种复合薄膜材料 |
US9875983B2 (en) * | 2016-04-29 | 2018-01-23 | Indium Corporation | Nanomicrocrystallite paste for pressureless sintering |
CN107452663A (zh) * | 2016-05-30 | 2017-12-08 | 中芯国际集成电路制造(北京)有限公司 | 晶圆承载膜 |
JP6365653B2 (ja) * | 2016-08-19 | 2018-08-01 | 千住金属工業株式会社 | はんだ合金、はんだ継手およびはんだ付け方法 |
DE102017206930A1 (de) * | 2017-04-25 | 2018-10-25 | Siemens Aktiengesellschaft | Lotformteil zum Diffusionslöten, Verfahren zu dessen Herstellung und Verfahren zu dessen Montage |
DE102018221148A1 (de) | 2018-12-06 | 2020-06-10 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines Substratadapters und Substratadapter zum Verbinden mit einem Elektronikbauteil |
JP6871524B1 (ja) * | 2020-03-23 | 2021-05-12 | 千住金属工業株式会社 | 積層接合材料、半導体パッケージおよびパワーモジュール |
CN114131241B (zh) * | 2021-12-06 | 2023-02-24 | 浙江亚通新材料股份有限公司 | 一种隧道炉用青铜焊料及焊接方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3035944A (en) * | 1960-08-05 | 1962-05-22 | Ben C Sher | Electrical component preparation utilizing a pre-acid treatment followed by chemical metal deposition |
US4750976A (en) * | 1984-12-19 | 1988-06-14 | Blasberg Oberflachentechnik Gmbh | Electrically conductive copper layers and process for preparing same |
IN168174B (ja) | 1986-04-22 | 1991-02-16 | Siemens Ag | |
US5409567A (en) * | 1994-04-28 | 1995-04-25 | Motorola, Inc. | Method of etching copper layers |
US5427865A (en) * | 1994-05-02 | 1995-06-27 | Motorola, Inc. | Multiple alloy solder preform |
JPH0963754A (ja) * | 1995-06-15 | 1997-03-07 | Mitsui Toatsu Chem Inc | 耐久性透明面状ヒーター及びその製造方法 |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6165596A (en) * | 1999-10-14 | 2000-12-26 | Lucent Technologies, Inc. | Multi-layer insulated metal substrate printed wiring board having improved thermal coupling of components |
US20030203705A1 (en) * | 2002-04-26 | 2003-10-30 | Yaojian Leng | Chemical-mechanical polishing slurry with improved defectivity |
JP3883472B2 (ja) * | 2002-05-20 | 2007-02-21 | 株式会社アイ.エス.テイ | 複合フィルム及びその製造方法 |
KR20070033329A (ko) * | 2004-02-18 | 2007-03-26 | 버지니아 테크 인터렉추얼 프라퍼티스, 인크. | 인터커넥트를 위한 나노 크기의 금속 페이스트 및 이의사용 방법 |
DE102004056702B3 (de) * | 2004-04-22 | 2006-03-02 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
DE102004019567B3 (de) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
JP4776188B2 (ja) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | 半導体装置製造方法およびウエハ加工用テープ |
DE102007048206A1 (de) * | 2007-10-08 | 2009-04-09 | Wieland-Werke Ag | Strukturiertes metallisches Band oder Schichtblech und Verfahren zur Herstellung von metallischem Band oder Schichtblech |
JP4987823B2 (ja) * | 2008-08-29 | 2012-07-25 | 株式会社東芝 | 半導体装置 |
DE102008059410A1 (de) * | 2008-11-27 | 2010-06-02 | Behr Gmbh & Co. Kg | Lötfolie auf Aluminiumbasis |
DE102008055134A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
DE102009018541A1 (de) * | 2009-04-24 | 2010-10-28 | W.C. Heraeus Gmbh | Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile |
US8120158B2 (en) * | 2009-11-10 | 2012-02-21 | Infineon Technologies Ag | Laminate electronic device |
DE102010013610B4 (de) * | 2010-03-22 | 2013-04-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum stoffschlüssigen Verbinden von elektronischen Bauelementen oder Kontaktelementen und Substraten |
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- 2012-09-21 CN CN201280047301.9A patent/CN103827353A/zh active Pending
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- 2012-09-21 US US14/348,408 patent/US20140234649A1/en not_active Abandoned
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WO2013045364A3 (de) | 2013-08-29 |
JP2015504477A (ja) | 2015-02-12 |
EP2761056B1 (de) | 2019-02-27 |
CN103827353A (zh) | 2014-05-28 |
EP2761056A2 (de) | 2014-08-06 |
DE102011083926A1 (de) | 2013-04-04 |
US20140234649A1 (en) | 2014-08-21 |
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