JP2011228451A - ダイシングテープ一体型半導体裏面用フィルム - Google Patents
ダイシングテープ一体型半導体裏面用フィルム Download PDFInfo
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- JP2011228451A JP2011228451A JP2010096298A JP2010096298A JP2011228451A JP 2011228451 A JP2011228451 A JP 2011228451A JP 2010096298 A JP2010096298 A JP 2010096298A JP 2010096298 A JP2010096298 A JP 2010096298A JP 2011228451 A JP2011228451 A JP 2011228451A
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- Prior art keywords
- semiconductor
- film
- back surface
- semiconductor back
- adhesive layer
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Images
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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Abstract
【解決手段】本発明のダイシングテープ一体型半導体裏面用フィルムは、基材上に放射線硬化型の粘着剤層を有するダイシングテープと、該粘着剤層上に設けられたフリップチップ型半導体裏面用フィルムとを有するダイシングテープ一体型半導体裏面用フィルムであって、前記粘着剤層は放射線照射により予め硬化されたものであることを特徴とする。
【選択図】 図1
Description
図1で示されるように、ダイシングテープ一体型半導体裏面用フィルム1は、基材31上に粘着剤層32が設けられたダイシングテープ3と、前記粘着剤層32上に設けられたフリップチップ型半導体裏面用フィルム(以下、「半導体裏面用フィルム」という場合がある)2とを備える構成である。前記半導体裏面用フィルム2は、半導体ウエハ貼着部分に対応する部分32a上にのみ設けられている。また、本発明は、図2で示されるように、粘着剤層32の全面に半導体裏面用フィルム12が設けられた構成のダイシングテープ一体型半導体裏面用フィルム11であってもよい。なお、半導体裏面用フィルム2の表面(ウエハの裏面に貼着される側の表面)は、ウエハ裏面に貼着されるまでの間、セパレータ等により保護されていてもよい。
半導体裏面用フィルム2、12はフィルム状の形態を有している。半導体裏面用フィルム2、12は、通常、製品としてのダイシングテープ一体型半導体裏面用フィルムの形態では、未硬化状態(半硬化状態を含む)であり、ダイシングテープ一体型半導体裏面用フィルムを半導体ウエハに貼着させた後に熱硬化される(詳細については後述する)。
半導体裏面用フィルム2、12から約0.1gをサンプリングして精秤し(試料の重量)、該サンプルをメッシュ状シートで包んだ後、約50mlのトルエン中に室温で1週間浸漬させた。その後、溶剤不溶分(メッシュ状シートの内容物)をトルエンから取り出し、130℃で約2時間乾燥させ、乾燥後の溶剤不溶分を秤量し(浸漬・乾燥後の重量)、下記式(a)よりゲル分率(重量%)を算出する。
ゲル分率(重量%)=[(浸漬・乾燥後の重量)/(試料の重量)]×100 (a)
前記ダイシングテープ3は、基材31上に粘着剤層32が形成されて構成されている。このように、ダイシングテープ3は、基材31と、粘着剤層32とが積層された構成を有していればよい。基材(支持基材)は粘着剤層等の支持母体として用いることができる。前記基材31は放射線透過性を有していることが好ましい。前記基材31としては、例えば、紙などの紙系基材;布、不織布、フェルト、ネットなどの繊維系基材;金属箔、金属板などの金属系基材;プラスチックのフィルムやシートなどのプラスチック系基材;ゴムシートなどのゴム系基材;発泡シートなどの発泡体や、これらの積層体[特に、プラスチック系基材と他の基材との積層体や、プラスチックフィルム(又はシート)同士の積層体など]等の適宜な薄葉体を用いることができる。本発明では、基材としては、プラスチックのフィルムやシートなどのプラスチック系基材を好適に用いることができる。このようなプラスチック材における素材としては、例えば、ポリエチレン(PE)、ポリプロピレン(PP)、エチレン−プロピレン共重合体等のオレフィン系樹脂;エチレン−酢酸ビニル共重合体(EVA)、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体等のエチレンをモノマー成分とする共重合体;ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリブチレンテレフタレート(PBT)等のポリエステル;アクリル系樹脂;ポリ塩化ビニル(PVC);ポリウレタン;ポリカーボネート;ポリフェニレンスルフィド(PPS);ポリアミド(ナイロン)、全芳香族ポリアミド(アラミド)等のアミド系樹脂;ポリエーテルエーテルケトン(PEEK);ポリイミド;ポリエーテルイミド;ポリ塩化ビニリデン;ABS(アクリロニトリル−ブタジエン−スチレン共重合体);セルロース系樹脂;シリコーン樹脂;フッ素樹脂などが挙げられる。
本実施の形態に係るダイシングテープ一体型半導体裏面用フィルムの製造方法について、図1に示すダイシングテープ一体型半導体裏面用フィルム1を例にして説明する。先ず、基材31は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
半導体ウエハとしては、公知乃至慣用の半導体ウエハであれば特に制限されず、各種素材の半導体ウエハから適宜選択して用いることができる。本発明では、半導体ウエハとしては、シリコンウエハを好適に用いることができる。
本実施の形態に係る半導体装置の製造方法について、図3を参照しながら以下に説明する。図3は、前記ダイシングテープ一体型半導体裏面用フィルム1を用いた場合の半導体装置の製造方法を示す断面模式図である。
先ず、図3(a)で示されるように、ダイシングテープ一体型半導体裏面用フィルム1の半導体裏面用フィルム2上に任意に設けられたセパレータを適宜に剥離し、当該半導体裏面用フィルム2上に半導体ウエハ4を貼着して、これを接着保持させ固定する(マウント工程)。このとき前記半導体裏面用フィルム2は未硬化状態(半硬化状態を含む)にある。また、ダイシングテープ一体型半導体裏面用フィルム1は、半導体ウエハ4の裏面に貼着される。半導体ウエハ4の裏面とは、回路面とは反対側の面(非回路面、非電極形成面などとも称される)を意味する。貼着方法は特に限定されないが、圧着による方法が好ましい。圧着は、通常、圧着ロール等の押圧手段により押圧しながら行われる。
次に、図3(b)で示されるように、半導体ウエハ4のダイシングを行う。これにより、半導体ウエハ4を所定のサイズに切断して個片化(小片化)し、半導体チップ5を製造する。ダイシングは、例えば、半導体ウエハ4の回路面側から常法に従い行われる。また、本工程では、例えば、ダイシングテープ一体型半導体裏面用フィルム1まで切込みを行うフルカットと呼ばれる切断方式等を採用できる。本工程で用いるダイシング装置としては特に限定されず、従来公知のものを用いることができる。また、半導体ウエハ4は、半導体裏面用フィルムを有するダイシングテープ一体型半導体裏面用フィルム1により優れた密着性で接着固定されているので、チップ欠けやチップ飛びを抑制できると共に、半導体ウエハ4の破損も抑制できる。なお、半導体裏面用フィルム2がエポキシ樹脂を含む樹脂組成物により形成されていると、ダイシングにより切断されても、その切断面において半導体裏面用フィルムの接着剤層の糊はみ出しが生じるのを抑制又は防止することができる。その結果、切断面同士が再付着(ブロッキング)することを抑制又は防止することができ、後述のピックアップを一層良好に行うことができる。
ダイシングテープ一体型半導体裏面用フィルム1に接着固定された半導体チップ5を回収する為に、図3(c)で示されるように、半導体チップ5のピックアップを行って、半導体チップ5を半導体裏面用フィルム2とともにダイシングテープ3より剥離させる。ピックアップの方法としては特に限定されず、従来公知の種々の方法を採用できる。例えば、個々の半導体チップ5をダイシングテープ一体型半導体裏面用フィルム1の基材31側からニードルによって突き上げ、突き上げられた半導体チップ5をピックアップ装置によってピックアップする方法等が挙げられる。但し、本発明に於いては、粘着剤層32が放射線の照射により予め硬化されているので、当該粘着剤層32に対する放射線の照射は行われない。なお、ピックアップされた半導体チップ5は、その裏面が半導体裏面用フィルム2により保護されている。
ピックアップした半導体チップ5は、図3(d)で示されるように、基板等の被着体6に、フリップチップボンディング方式(フリップチップ実装方式)により固定させる。具体的には、半導体チップ5を、半導体チップ5の回路面(表面、回路パターン形成面、電極形成面などとも称される)が被着体6と対向する形態で、被着体6に常法に従い固定させる。例えば、半導体チップ5の回路面側に形成されているバンプ51を、被着体6の接続パッドに被着された接合用の導電材(半田など)61に接触させて押圧しながら導電材を溶融させることにより、半導体チップ5と被着体6との電気的導通を確保し、半導体チップ5を被着体6に固定させることができる(フリップチップボンディング工程)。このとき、半導体チップ5と被着体6との間には空隙が形成されており、その空隙間距離は、一般的に30μm〜300μm程度である。尚、半導体チップ5を被着体6上にフリップチップボンディングした後は、半導体チップ5と被着体6との対向面や間隙を洗浄し、該間隙に封止材(封止樹脂など)を充填させて封止することが重要である。
<フリップチップ型半導体裏面用フィルムの作製>
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製)100部に対して、エポキシ樹脂(商品名「エピコート1004」JER株式会社製)113部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製)121部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製)246部、染料1(商品名「OIL GREEN 502」オリエント化学工業株式会社製)5部、染料2(商品名「OIL BLACK BS」オリエント化学工業株式会社製)5部をメチルエチルケトンに溶解して、固形分濃度が23.6重量%となる樹脂組成物の溶液を調製した。
冷却管、窒素導入管、温度計および撹拌装置を備えた反応容器に、アクリル酸2−エチルヘキシル(以下、「2EHA」という。)88.8部、アクリル酸−2−ヒドロキシエチル(以下、「HEA」という。)11.2部、過酸化ベンゾイル0.2部及びトルエン65部を入れ、窒素気流中で61℃にて6時間重合処理をし、重量平均分子量85万のアクリル系ポリマーAを得た。2EHAとHEAとのモル比は、100mol対20molとした。
紫外線(UV)照射装置:高圧水銀灯
紫外線照射積算光量:500mJ/cm2
出力:75W
照射強度150mW/cm2
尚、紫外線照射は粘着剤層前駆体に対し直接照射した。
前記半導体裏面用フィルムAを、上記ダイシングテープの粘着剤層上に、ラミネーターを用いて貼り合せ、ダイシングテープ一体型半導体裏面用フィルムを作製した。尚、ラミネーターの条件は下記の通りである。
ラミネーター装置:LPA330/450
ラミネーター温度:40℃
ラミネート速度:1600mm/min
粘着剤層前駆体の表面に紫外線を照射しなかったこと以外は、前記実施例1と同様にして、本比較例に係るダイシングテープ一体型半導体裏面用フィルムを作成した。
実施例1及び比較例1で作製したダイシングテープ一体型半導体裏面用フィルムについて、ダイシング性、ピックアップ性、フリップチップボンディング性、保存安定性を、下記の方法により評価及び測定した。評価又は測定結果は表1に併記した。
実施例1及び比較例1のダイシングテープ一体型半導体裏面用フィルムを用いて、以下の要領で、実際に半導体ウエハのダイシングを行ってダイシング性を評価し、その後に剥離性の評価を行い、ダイシングテープ一体型ウエハ裏面保護フィルムのダイシング性能とピックアップ性能を評価とした。
研削装置:商品名「DFG−8560」ディスコ社製
半導体ウエハ:8インチ径(厚さ0.6mmから0.2mmに裏面研削)
貼り付け装置:商品名「MA−3000III」日東精機株式会社製
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:70℃
ダイシング装置:商品名「DFD−6361」ディスコ社製
ダイシングリング:「2−8−1」(ディスコ社製)
ダイシング速度:30mm/sec
ダイシングブレード:
Z1;ディスコ社製「203O−SE 27HCDD」
Z2;ディスコ社製「203O−SE 27HCBB」
ダイシングブレード回転数:
Z1;40,000r/min
Z2;45,000r/min カット方式:ステップカット
ウエハチップサイズ:10.0mm角
ピックアップ装置:商品名「SPA−300」株式会社新川社製
ピックアップニードル本数:1本
ニードル突き上げ速度:20mm/s
ニードル突き上げ量 : 500μm
ピックアップ時間:1秒
ダイシングテープ エキスパンド量 : 3mm
続いて、半導体チップを回路基板上にフリップチップボンディングした。このとき半導体チップの回路面を回路基板に対向させ、半導体チップの回路面に形成されているバンプを、回路基板の接続パッドに被着された接合用の導電材(半田)と接触させて押圧しながら、温度を260℃まで上げて導電材を溶融させ、その後、室温まで冷却させて行った。更に、半導体チップと回路基板の間隙に封止樹脂としてのアンダーフィル材を注入させた。
○:問題なく、フリップチップボンディング方法により、実装できる。
×:フリップチップボンディング方法により、実装できない。
実施例1、比較例1に示すダイシングテープ一体型半導体裏面用フィルムを作製後、40℃の雰囲気下にて30日間放置した後、前記ダイシング性、ピックアップ性、フリップチップボンディング性を同様に評価した。
表1から分かる通り、実施例1に係るダイシングテープ一体型半導体裏面用フィルムでは、半導体チップのチップ等を発生させることなくダイシングすることができ、かつ、ピックアップ性にも優れていることが確認できた。更に、フリップチップボンディングも良好に行うことができた。また、40℃の雰囲気下にて30日間放置した後のダイシングテープ一体型半導体裏面用フィルムにおいても、ダイシング性、ピックアップ性、及びフリップチップボンディング性に優れていることが確認された。
2、12 半導体裏面用フィルム
3 ダイシングテープ
4 半導体ウエハ
5 半導体チップ
6 被着体
12a 半導体ウェハ貼着部分
12b 半導体ウェハ貼着部分以外の他の部分
31 基材
32 粘着剤層
32a 半導体ウエハ貼着部分に対応する部分
32b 半導体ウエハ貼着部分に対応する部分以外の他の部分
51 半導体チップ5の回路面側に形成されているバンプ
61 被着体6の接続パッドに被着された接合用の導電材
Claims (6)
- 基材上に放射線硬化型の粘着剤層を有するダイシングテープと、該粘着剤層上に設けられたフリップチップ型半導体裏面用フィルムとを有するダイシングテープ一体型半導体裏面用フィルムであって、
前記粘着剤層は放射線照射により予め硬化されたものであるダイシングテープ一体型半導体裏面用フィルム。 - 前記フリップチップ型半導体裏面用フィルムは、放射線照射により予め硬化された粘着剤層上に貼り合わされたものである請求項1に記載のダイシングテープ一体型半導体裏面用フィルム。
- 前記粘着剤層において放射線照射により予め硬化された部分が、前記フリップチップ型半導体裏面用フィルムにおける半導体ウエハの貼着部分に対応する部分である請求項1又は2に記載のダイシングテープ一体型半導体裏面用フィルム。
- 前記フリップチップ型半導体裏面用フィルムは着色剤が添加されたものである請求項1〜3の何れか1項に記載のダイシングテープ一体型半導体裏面用フィルム。
- 請求項1〜4の何れか1項に記載のダイシングテープ一体型半導体裏面用フィルムを用いた半導体装置の製造方法であって、
前記ダイシングテープ一体型半導体裏面用フィルムに於けるフリップチップ型半導体裏面用フィルム上に半導体ウエハを貼着する工程と、
前記半導体ウエハをダイシングして半導体素子を形成する工程と、
前記半導体素子を前記保護フィルムと共に、ダイシングテープの粘着剤層から剥離する工程と、
前記半導体素子を前記被着体上にフリップチップ接続させる工程とを具備し、
前記半導体ウエハを貼着する工程から半導体素子を剥離する工程までは、前記粘着剤層に放射線を照射しない半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法により製造されたものであるフリップチップ型半導体装置。
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TWI742171B (zh) * | 2016-10-03 | 2021-10-11 | 日商日東電工股份有限公司 | 切割帶一體型接著片 |
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TW201200574A (en) | 2012-01-01 |
KR20110116993A (ko) | 2011-10-26 |
TWI534236B (zh) | 2016-05-21 |
US8643194B2 (en) | 2014-02-04 |
TW201606041A (zh) | 2016-02-16 |
CN102220092A (zh) | 2011-10-19 |
US20110254176A1 (en) | 2011-10-20 |
KR20150138835A (ko) | 2015-12-10 |
JP5439264B2 (ja) | 2014-03-12 |
TWI593776B (zh) | 2017-08-01 |
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