JP2011215197A - フォトマスク及びその製造方法 - Google Patents
フォトマスク及びその製造方法 Download PDFInfo
- Publication number
- JP2011215197A JP2011215197A JP2010080506A JP2010080506A JP2011215197A JP 2011215197 A JP2011215197 A JP 2011215197A JP 2010080506 A JP2010080506 A JP 2010080506A JP 2010080506 A JP2010080506 A JP 2010080506A JP 2011215197 A JP2011215197 A JP 2011215197A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- light
- semi
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000012546 transfer Methods 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 32
- 238000000059 patterning Methods 0.000 claims abstract description 28
- 239000004973 liquid crystal related substance Substances 0.000 claims description 17
- 238000001039 wet etching Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 abstract description 22
- 238000002834 transmittance Methods 0.000 description 33
- 238000011161 development Methods 0.000 description 20
- 230000018109 developmental process Effects 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 206010047571 Visual impairment Diseases 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000007261 regionalization Effects 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241001648319 Toronia toru Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- -1 silicide compound Chemical class 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010080506A JP2011215197A (ja) | 2010-03-31 | 2010-03-31 | フォトマスク及びその製造方法 |
TW100110215A TW201202839A (en) | 2010-03-31 | 2011-03-24 | Photomask and method of manufacturing the same |
KR1020110028708A KR101375006B1 (ko) | 2010-03-31 | 2011-03-30 | 포토마스크 및 그 제조 방법 |
CN2011100803406A CN102207675A (zh) | 2010-03-31 | 2011-03-31 | 光掩模及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010080506A JP2011215197A (ja) | 2010-03-31 | 2010-03-31 | フォトマスク及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011215197A true JP2011215197A (ja) | 2011-10-27 |
JP2011215197A5 JP2011215197A5 (enrdf_load_stackoverflow) | 2013-04-04 |
Family
ID=44696580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010080506A Pending JP2011215197A (ja) | 2010-03-31 | 2010-03-31 | フォトマスク及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2011215197A (enrdf_load_stackoverflow) |
KR (1) | KR101375006B1 (enrdf_load_stackoverflow) |
CN (1) | CN102207675A (enrdf_load_stackoverflow) |
TW (1) | TW201202839A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013235037A (ja) * | 2012-05-02 | 2013-11-21 | Hoya Corp | フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
JP2018045016A (ja) * | 2016-09-13 | 2018-03-22 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
JP2019510253A (ja) * | 2016-03-31 | 2019-04-11 | インテル・コーポレーション | 高分解能のフォトマスク又はレチクル及びその製造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108267927B (zh) * | 2011-12-21 | 2021-08-24 | 大日本印刷株式会社 | 大型相移掩膜 |
JP6081716B2 (ja) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法 |
KR101282040B1 (ko) * | 2012-07-26 | 2013-07-04 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크 |
CN103969943A (zh) * | 2013-01-25 | 2014-08-06 | 北京京东方光电科技有限公司 | 一种对基板进行标记的方法 |
JP5686216B1 (ja) * | 2013-08-20 | 2015-03-18 | 大日本印刷株式会社 | マスクブランクス、位相シフトマスク及びその製造方法 |
JP6522277B2 (ja) * | 2013-11-19 | 2019-05-29 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP6282847B2 (ja) * | 2013-11-19 | 2018-02-21 | Hoya株式会社 | フォトマスク及び該フォトマスクを用いた基板の製造方法 |
JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
KR102096269B1 (ko) * | 2016-03-31 | 2020-04-03 | 주식회사 엘지화학 | 포토 마스크 및 이를 이용한 컬러필터용 컬럼 스페이서의 제조방법 |
JP6514143B2 (ja) * | 2016-05-18 | 2019-05-15 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
CN108563098A (zh) * | 2018-01-17 | 2018-09-21 | 京东方科技集团股份有限公司 | 一种掩膜版及其制备方法 |
TWI710850B (zh) * | 2018-03-23 | 2020-11-21 | 日商Hoya股份有限公司 | 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法 |
KR102179729B1 (ko) | 2018-03-27 | 2020-11-17 | 주식회사 엘지화학 | 블랙 격벽 패턴 필름 및 이의 제조방법 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08334885A (ja) * | 1995-06-02 | 1996-12-17 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
JPH09106064A (ja) * | 1995-09-13 | 1997-04-22 | Samsung Electron Co Ltd | ハーフトーン位相反転マスクの製造方法 |
JP2007133098A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Seimaku Kk | グレートーンマスク及びその製造方法 |
JP2009042753A (ja) * | 2007-07-19 | 2009-02-26 | Hoya Corp | フォトマスク及びその製造方法、並びにパターン転写方法 |
JP2009058606A (ja) * | 2007-08-30 | 2009-03-19 | Toppan Printing Co Ltd | カラーフィルタ及びその製造方法とフォトマスク及び液晶表示装置 |
JP2009063638A (ja) * | 2007-09-04 | 2009-03-26 | Fujitsu Microelectronics Ltd | フォトマスクの製造方法及び半導体装置の製造方法 |
JP2009080510A (ja) * | 2003-04-09 | 2009-04-16 | Hoya Corp | フォトマスクの製造方法およびフォトマスクブランク |
JP2009227365A (ja) * | 2008-03-19 | 2009-10-08 | Hidaka Seiki Kk | テンション付与装置及び熱交換器用フィンの製造装置 |
JP2009237419A (ja) * | 2008-03-28 | 2009-10-15 | Hoya Corp | 多階調フォトマスク及びその製造方法、並びにパターン転写方法 |
JP2009265620A (ja) * | 2008-04-02 | 2009-11-12 | Hoya Corp | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
JP2010117627A (ja) * | 2008-11-14 | 2010-05-27 | Dainippon Printing Co Ltd | フォトマスクブランクスおよびその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3630929B2 (ja) * | 1997-07-18 | 2005-03-23 | Hoya株式会社 | ハーフトーン型位相シフトマスクの製造方法 |
JP3037941B2 (ja) * | 1997-12-19 | 2000-05-08 | ホーヤ株式会社 | ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク |
US6037083A (en) * | 1998-12-22 | 2000-03-14 | Hoya Corporation | Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method |
JP4587837B2 (ja) * | 2005-02-18 | 2010-11-24 | Hoya株式会社 | グレートーンマスクの製造方法及びグレートーンマスク |
TW200736600A (en) * | 2006-02-20 | 2007-10-01 | Hoya Corp | Method of inspecting a defect in a photomask and photomask |
JP4809752B2 (ja) | 2006-11-01 | 2011-11-09 | 株式会社エスケーエレクトロニクス | 中間調フォトマスク及びその製造方法 |
JP5064116B2 (ja) * | 2007-05-30 | 2012-10-31 | Hoya株式会社 | フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法 |
TWI431408B (zh) * | 2007-07-23 | 2014-03-21 | Hoya Corp | 光罩資訊之取得方法、光罩之品質顯示方法、顯示裝置之製造方法以及光罩製品 |
JP5254581B2 (ja) * | 2007-08-22 | 2013-08-07 | Hoya株式会社 | フォトマスク及びフォトマスクの製造方法 |
JP4934236B2 (ja) * | 2007-09-29 | 2012-05-16 | Hoya株式会社 | グレートーンマスクブランク、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法 |
JP4849276B2 (ja) * | 2008-08-15 | 2012-01-11 | 信越化学工業株式会社 | グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法 |
-
2010
- 2010-03-31 JP JP2010080506A patent/JP2011215197A/ja active Pending
-
2011
- 2011-03-24 TW TW100110215A patent/TW201202839A/zh unknown
- 2011-03-30 KR KR1020110028708A patent/KR101375006B1/ko active Active
- 2011-03-31 CN CN2011100803406A patent/CN102207675A/zh active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08334885A (ja) * | 1995-06-02 | 1996-12-17 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
JPH09106064A (ja) * | 1995-09-13 | 1997-04-22 | Samsung Electron Co Ltd | ハーフトーン位相反転マスクの製造方法 |
JP2009080510A (ja) * | 2003-04-09 | 2009-04-16 | Hoya Corp | フォトマスクの製造方法およびフォトマスクブランク |
JP2007133098A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Seimaku Kk | グレートーンマスク及びその製造方法 |
JP2009042753A (ja) * | 2007-07-19 | 2009-02-26 | Hoya Corp | フォトマスク及びその製造方法、並びにパターン転写方法 |
JP2009058606A (ja) * | 2007-08-30 | 2009-03-19 | Toppan Printing Co Ltd | カラーフィルタ及びその製造方法とフォトマスク及び液晶表示装置 |
JP2009063638A (ja) * | 2007-09-04 | 2009-03-26 | Fujitsu Microelectronics Ltd | フォトマスクの製造方法及び半導体装置の製造方法 |
JP2009227365A (ja) * | 2008-03-19 | 2009-10-08 | Hidaka Seiki Kk | テンション付与装置及び熱交換器用フィンの製造装置 |
JP2009237419A (ja) * | 2008-03-28 | 2009-10-15 | Hoya Corp | 多階調フォトマスク及びその製造方法、並びにパターン転写方法 |
JP2009265620A (ja) * | 2008-04-02 | 2009-11-12 | Hoya Corp | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
JP2010117627A (ja) * | 2008-11-14 | 2010-05-27 | Dainippon Printing Co Ltd | フォトマスクブランクスおよびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013235037A (ja) * | 2012-05-02 | 2013-11-21 | Hoya Corp | フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
JP2019510253A (ja) * | 2016-03-31 | 2019-04-11 | インテル・コーポレーション | 高分解能のフォトマスク又はレチクル及びその製造方法 |
JP2018045016A (ja) * | 2016-09-13 | 2018-03-22 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101375006B1 (ko) | 2014-04-16 |
KR20110110005A (ko) | 2011-10-06 |
CN102207675A (zh) | 2011-10-05 |
TW201202839A (en) | 2012-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2011215197A (ja) | フォトマスク及びその製造方法 | |
JP5555789B2 (ja) | フォトマスク及びその製造方法、並びにパターン転写方法 | |
JP5409238B2 (ja) | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法 | |
CN107402496B (zh) | 光掩模的制造方法、光掩模及显示装置的制造方法 | |
TWI745873B (zh) | 光罩、光罩之製造方法、及顯示裝置之製造方法 | |
TWI648593B (zh) | 光罩之製造方法、光罩、及顯示裝置之製造方法 | |
JP2011215197A5 (enrdf_load_stackoverflow) | ||
JP5635577B2 (ja) | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 | |
TW201928507A (zh) | 光罩及顯示裝置之製造方法 | |
KR20170010032A (ko) | 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 표시 장치의 제조 방법 | |
JP2014066863A5 (enrdf_load_stackoverflow) | ||
JP5372403B2 (ja) | 多階調フォトマスク、及びパターン転写方法 | |
CN113253564B (zh) | 光掩模、光掩模的制造方法、显示装置用器件的制造方法 | |
KR101703395B1 (ko) | 포토마스크의 제조 방법, 패턴 전사 방법 및 표시 장치의 제조 방법 | |
JP2009237419A (ja) | 多階調フォトマスク及びその製造方法、並びにパターン転写方法 | |
JP4615032B2 (ja) | 多階調フォトマスクの製造方法及びパターン転写方法 | |
JP2017068281A (ja) | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 | |
KR101343256B1 (ko) | 포토마스크의 제조 방법, 패턴 전사 방법 및 표시 장치의 제조 방법 | |
JP6744955B2 (ja) | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 | |
TW201823855A (zh) | 光罩之製造方法、光罩、及顯示裝置之製造方法 | |
JP4615066B2 (ja) | 多階調フォトマスクの製造方法及びパターン転写方法 | |
JP2009229868A (ja) | グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130214 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130214 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140624 |