TW200736600A - Method of inspecting a defect in a photomask and photomask - Google Patents

Method of inspecting a defect in a photomask and photomask

Info

Publication number
TW200736600A
TW200736600A TW096106076A TW96106076A TW200736600A TW 200736600 A TW200736600 A TW 200736600A TW 096106076 A TW096106076 A TW 096106076A TW 96106076 A TW96106076 A TW 96106076A TW 200736600 A TW200736600 A TW 200736600A
Authority
TW
Taiwan
Prior art keywords
pattern
photomask
inspecting
regions
peripheral
Prior art date
Application number
TW096106076A
Other languages
Chinese (zh)
Inventor
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200736600A publication Critical patent/TW200736600A/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A photomask 10 has a pixel pattern region 9 including a repetitive pattern in which a same pattern is repeated, and peripheral pattern regions 10A, 10B, 10C, and 10D formed around the pixel pattern region and having no repetitive pattern. In a method of inspecting a pattern defect in the photomask 10, the photomask has an unused space 21 without the pixel pattern region or the peripheral pattern regions. The unused space 21 is provided with inspecting pattern regions 20A, 20B, 20C, and 20D having patterns same as those of the peripheral pattern regions 10A, 10B, 10C, and 10D, respectively. By comparing the peripheral pattern regions and the inspecting pattern regions, the pattern defect in the peripheral pattern regions are inspected.
TW096106076A 2006-02-20 2007-02-16 Method of inspecting a defect in a photomask and photomask TW200736600A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006043029 2006-02-20

Publications (1)

Publication Number Publication Date
TW200736600A true TW200736600A (en) 2007-10-01

Family

ID=38612596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106076A TW200736600A (en) 2006-02-20 2007-02-16 Method of inspecting a defect in a photomask and photomask

Country Status (3)

Country Link
KR (1) KR20070083191A (en)
CN (1) CN101025563A (en)
TW (1) TW200736600A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579558B (en) * 2014-12-15 2017-04-21 Nuflare Technology Inc Inspection method and inspection device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011215197A (en) * 2010-03-31 2011-10-27 Hoya Corp Photomask and method for manufacturing the same
CN106249553B (en) * 2016-10-20 2018-03-13 南京华东电子信息科技股份有限公司 A kind of periphery exposure method in panel of LCD manufacture
CN108461414A (en) * 2018-03-30 2018-08-28 上海华力微电子有限公司 A method of increasing wafer-scanning area
CN115097691B (en) * 2022-08-29 2022-12-02 合肥晶合集成电路股份有限公司 Mask plate and forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579558B (en) * 2014-12-15 2017-04-21 Nuflare Technology Inc Inspection method and inspection device

Also Published As

Publication number Publication date
CN101025563A (en) 2007-08-29
KR20070083191A (en) 2007-08-23

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