JP2011175986A - 発光装置の作製方法 - Google Patents
発光装置の作製方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
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- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
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Abstract
【解決手段】塗布液を塗布する際に成膜形成装置にヒーターもしくは超音波振動子を設けて、塗布液に熱や超音波振動を与える。これにより塗布液の液切れ不良や液詰まりを解決することができる。
【選択図】図1
Description
このようなヘッド部115が紙面に垂直な方向に沿って手前方向に走査されることで図1(A)に示したような塗布工程が行われる。
なお、超音波振動子を取り付ける位置は、図1(B)に示される位置に限られることはなく、別の位置に付けても良いし、各ノズルに付けても良い。
溶媒の精製または有機EL材料の精製は、蒸留法、昇華法、濾過法、再結晶法、再沈殿法、クロマトグラフィ法または透析法等の技術を繰り返し行うことが好ましい。最終的には金属元素やアルカリ金属元素等の不純物を0.1ppm以下(好ましくは0.01ppm以下)にまで低減することが望ましい。
である。基板11としてはガラス、ガラスセラミックス、石英、シリコン、セラミックス、金属若しくはプラスチックからなる基板を用いることができる。
この保持容量3504は、電流制御用TFT3503のゲート電極35にかかる電圧を保持するためのコンデンサとして機能する。
系、ポリフルオレン系などが挙げられる。
(「H. Shenk,H.Becker,O.Gelsen,E.Kluge,W.Kreuder,and H.Spreitzer,“Polymers for Light Emitting Diodes”,Euro Display,Proceedings,1999,p.33-37」)
モノマーの状態で塗布した場合、まずポリマー前駆体が形成され、真空中で加熱することにより重合してポリマーになる。
なお、n型不純物元素としては、代表的には15族に属する元素、典型的にはリン又は砒素を用いることができる。なお、本実施例ではホスフィン(PH3)を質量分離しないでプラズマ励起したプラズマ(イオン)ドーピング法を用い、リンを1×1018atoms/cm3の濃度で添加する。勿論、質量分離を行うイオンインプランテーション法を用いても良い。
の濃度で含まれるようにドーズ量を調節する。
これは、ゲート電極としては微細加工が可能な材料を用い、ゲート配線には微細加工はできなくとも配線抵抗が小さい材料を用いるためである。勿論、ゲート電極とゲート配線とを同一材料で形成しても構わない。
バンク349は1〜2μm厚のアクリル膜またはポリイミド膜をパターニングして形成すれば良い。このバンク349は図3に示したように、画素と画素との間にストライプ状に形成される。本実施例ではソース配線341に沿って形成するがゲート配線337に沿って形成しても良い。
本実施例では、赤色に発光するEL層としてシアノポリフェニレンビニレン、緑色に発光するEL層としてポリフェニレンビニレン、青色に発光するEL層としてポリアルキルフェニレンを各々50nmの厚さに形成する。また、溶媒としては1,2−ジクロロメタンを用い、80〜150℃のホットプレートで1〜5分の熱処理を行って揮発させる。
この効果は電流を流した際に生じるホットキャリア注入に対する劣化対策であり、サンプリング回路の場合はチャネル形成領域904を挟む形で両側に設ける点が異なる。
を用いることができる。この充填材1103の内部に乾燥剤(図示せず)を設けておくと、吸湿効果を保ち続けられるので好ましい。このとき、乾燥剤は充填材に添加されたものであっても良いし、充填材に封入されたものであっても良い。
また、上述した充填材の代わりに不活性ガス(窒素、アルゴン、ヘリウム等)の他、不活性液体(パーフルオロアルカンに代表されるのは、液状フッ素化炭素等である)を充填させてもよい。
さらに、塗布液114aは、ノズル125aから矢印bの方向へかけられる圧力や塗布液の重力により吐出が補助される。
であり、本体2301、記録媒体(DVD等)2302、操作スイッチ2303、表示部(a)2304、表示部(b)2305等を含む。表示部(a)は主として画像情報を表示し、表示部(b)は主として文字情報を表示するが、本発明の自発光装置はこれら表示部(a)、(b)に用いることができる。なお、記録媒体を備えた画像再生装置には家庭用ゲーム機器なども含まれる。
Claims (6)
- 基板上にストライプ状に配列された第1の電極を形成し、
前記第1の電極同士の間を埋めるように、前記第1の電極に沿ってバンクを形成し、
ノズルからEL層を形成する塗布液を吐出して、前記第1の電極上にEL層を形成し、
前記EL層及び前記バンク上に、前記第1の電極と直交するようにストライプ状に配列された第2の電極を形成するものであり、
前記ノズルには超音波振動子及びヒーターが設けられ、当該超音波振動子が前記塗布液に超音波振動を与え、当該ヒーターが前記塗布液を加熱し、前記塗布液は霧状の粒子となってノズルから取り出され、
前記霧状の粒子は、引き出し電極により引き出され、加速電極により引き出された方向に加速され、制御電極により制御されて前記第1の電極上に塗布されて前記EL層を形成することを特徴とする発光装置の作製方法。 - 基板上にTFTを形成し、
前記TFTと電気的に接続される画素電極を形成し、
前記画素電極同士の間にストライプ状にバンクを形成し、
ノズルからEL層を形成する塗布液を吐出して、前記画素電極上にEL層を形成し、
前記EL層及び前記バンク上に前記画素電極と対向する電極を形成するものであり、
前記ノズルには超音波振動子及びヒーターが設けられ、当該超音波振動子が前記塗布液に超音波振動を与え、当該ヒーターが前記塗布液を加熱し、前記塗布液は霧状の粒子となってノズルから取り出され、
前記霧状の粒子は、引き出し電極により引き出され、加速電極により引き出された方向に加速され、制御電極により制御されて前記画素電極上に塗布されて前記EL層を形成することを特徴とする発光装置の作製方法。 - 請求項2において、前記バンクは、前記画素電極の端部を覆うように形成されることを特徴とする発光装置の作製方法。
- 請求項1乃至請求項3のいずれか一において、前記霧状の粒子は前記引き出し電極により荷電粒子として引き出されることを特徴とする発光装置の作製方法。
- 請求項1乃至請求項4のいずれか一において、前記塗布液はトルエン又はN−メチルピロリドンを溶媒として用いることを特徴とする発光装置の作製方法。
- 請求項1乃至請求項5のいずれか一において、前記バンクは樹脂材料で形成されることを特徴とする発光装置の作製方法。
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Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW512543B (en) * | 1999-06-28 | 2002-12-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
TW468283B (en) | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
TW471011B (en) | 1999-10-13 | 2002-01-01 | Semiconductor Energy Lab | Thin film forming apparatus |
TW495808B (en) | 2000-02-04 | 2002-07-21 | Semiconductor Energy Lab | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |
TWI226205B (en) * | 2000-03-27 | 2005-01-01 | Semiconductor Energy Lab | Self-light emitting device and method of manufacturing the same |
US6739931B2 (en) * | 2000-09-18 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
US6646284B2 (en) | 2000-12-12 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US6992439B2 (en) * | 2001-02-22 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with sealing structure for protecting organic light emitting element |
JP4801278B2 (ja) | 2001-04-23 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
JP3969698B2 (ja) * | 2001-05-21 | 2007-09-05 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
US20020197393A1 (en) * | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
SG143063A1 (en) | 2002-01-24 | 2008-06-27 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
JP3957535B2 (ja) * | 2002-03-14 | 2007-08-15 | 株式会社半導体エネルギー研究所 | 発光装置の駆動方法、電子機器 |
US6858464B2 (en) * | 2002-06-19 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing light emitting device |
JP4748986B2 (ja) * | 2002-11-01 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
AU2003277541A1 (en) * | 2002-11-11 | 2004-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating light emitting device |
JP4306231B2 (ja) * | 2002-11-19 | 2009-07-29 | カシオ計算機株式会社 | 表示装置並びに表示装置の製造方法及び製造装置 |
JP2004198493A (ja) * | 2002-12-16 | 2004-07-15 | Seiko Epson Corp | 電子回路の駆動方法、電子装置の駆動方法、電気光学装置の駆動方法及び電子機器 |
KR100776480B1 (ko) * | 2005-08-30 | 2007-11-16 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 및 그 제조 방법 |
JP2007115464A (ja) * | 2005-10-19 | 2007-05-10 | Toppan Printing Co Ltd | 表示素子の製造方法 |
EP1830421A3 (en) | 2006-03-03 | 2012-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, manufacturing method of light emitting device, and sheet-like sealing material |
JP4910518B2 (ja) * | 2006-07-05 | 2012-04-04 | 富士ゼロックス株式会社 | 有機電界発光素子の製造方法 |
US8017186B2 (en) * | 2006-08-17 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Film forming method, discharging droplet method and droplet discharging device |
JP4725577B2 (ja) * | 2007-12-28 | 2011-07-13 | カシオ計算機株式会社 | 表示装置の製造方法 |
US20100159155A1 (en) * | 2008-12-22 | 2010-06-24 | Mohan Kapahi | Mining Component Coating Process |
JP5852810B2 (ja) | 2010-08-26 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20120107486A1 (en) * | 2010-11-01 | 2012-05-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Sealant coating device and dispensing method thereof |
JP5982952B2 (ja) * | 2012-03-29 | 2016-08-31 | 凸版印刷株式会社 | 塗布膜形成装置 |
US9443941B2 (en) * | 2012-06-04 | 2016-09-13 | Infineon Technologies Austria Ag | Compound semiconductor transistor with self aligned gate |
JP2014123628A (ja) * | 2012-12-20 | 2014-07-03 | Japan Display Inc | 有機エレクトロルミネッセンス表示装置及び有機エレクトロルミネッセンス表示装置の製造方法 |
TWI790965B (zh) | 2014-05-30 | 2023-01-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
KR102006505B1 (ko) * | 2014-09-24 | 2019-08-02 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
US10132699B1 (en) * | 2014-10-06 | 2018-11-20 | National Technology & Engineering Solutions Of Sandia, Llc | Electrodeposition processes for magnetostrictive resonators |
CN109156065B (zh) | 2016-05-18 | 2020-12-11 | 株式会社日本有机雷特显示器 | 有机el显示面板及其制造方法 |
US10833138B2 (en) | 2016-06-09 | 2020-11-10 | Joled Inc. | Organic EL display panel and production method therefor |
US10636845B2 (en) | 2017-12-25 | 2020-04-28 | Sakai Display Products Corporation | Organic electroluminescent display apparatus |
JP6636580B2 (ja) * | 2018-07-27 | 2020-01-29 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置 |
JP2020109826A (ja) * | 2019-09-05 | 2020-07-16 | 住友化学株式会社 | 発光素子用組成物及びそれを含有する発光素子 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05116322A (ja) * | 1991-10-28 | 1993-05-14 | Matsushita Electric Ind Co Ltd | インクジエツト記録装置 |
JPH1174083A (ja) * | 1997-09-01 | 1999-03-16 | Seiko Epson Corp | 電界発光素子およびその製造方法 |
JPH11216867A (ja) * | 1997-10-17 | 1999-08-10 | Eastman Kodak Co | 2進静電偏向による連続式インクジェットプリンタ |
JPH11320868A (ja) * | 1998-05-15 | 1999-11-24 | Mitsubishi Electric Corp | インクジェットヘッド駆動装置 |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3484793A (en) | 1966-05-02 | 1969-12-16 | Xerox Corp | Image recording apparatus ink droplet recorder with optical input |
JPS5113558B1 (ja) * | 1970-11-18 | 1976-04-30 | ||
US3878517A (en) * | 1973-06-01 | 1975-04-15 | Sharp Kk | Ink jet system of charge amplitude controlling type |
US4067020A (en) | 1976-09-20 | 1978-01-03 | A. B. Dick Company | Noninterrupt ink transfer system for ink jet printer |
US4281332A (en) * | 1978-12-28 | 1981-07-28 | Ricoh Company, Ltd. | Deflection compensated ink ejection printing apparatus |
US4357557A (en) | 1979-03-16 | 1982-11-02 | Sharp Kabushiki Kaisha | Glass sealed thin-film electroluminescent display panel free of moisture and the fabrication method thereof |
JPS6125671A (ja) * | 1984-07-13 | 1986-02-04 | Natl House Ind Co Ltd | プライマ−塗布方法 |
US4737803A (en) * | 1986-07-09 | 1988-04-12 | Fuji Xerox Co., Ltd. | Thermal electrostatic ink-jet recording apparatus |
US4788629A (en) | 1986-10-29 | 1988-11-29 | Loctite Luminescent Systems, Inc. | Instrument panel members |
US5142677A (en) | 1989-05-04 | 1992-08-25 | Texas Instruments Incorporated | Context switching devices, systems and methods |
US5059148A (en) | 1987-12-21 | 1991-10-22 | Gte Products Corporation | Thin film flat panel displays and method of manufacture |
CA1335424C (en) | 1987-12-29 | 1995-05-02 | Tohei Moritani | Multilayered packaging materials having high gas barrier property |
US4882518A (en) | 1988-05-25 | 1989-11-21 | The Cherry Corporation | Back cap for an electroluminescent display |
DE68917803T2 (de) | 1988-06-13 | 1995-01-05 | Nordson Corp | Verfahren zum Anbringen einer isolierenden feuchtigkeitsgeschützten Schicht auf gedruckten Leiterplatten. |
US5770892A (en) | 1989-01-18 | 1998-06-23 | Sgs-Thomson Microelectronics, Inc. | Field effect device with polycrystalline silicon channel |
US5189405A (en) | 1989-01-26 | 1993-02-23 | Sharp Kabushiki Kaisha | Thin film electroluminescent panel |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
US4951064A (en) | 1989-05-15 | 1990-08-21 | Westinghouse Electric Corp. | Thin film electroluminescent edge emitter assembly and integral packaging |
DE3932171A1 (de) | 1989-09-27 | 1991-04-04 | Henkel Kgaa | Universalklebespachtel |
US4994540A (en) | 1990-01-16 | 1991-02-19 | Mobay Corporation | Sag resistant, unfilled, low viscosity urethane structural adhesive |
US5304419A (en) | 1990-07-06 | 1994-04-19 | Alpha Fry Ltd | Moisture and particle getter for enclosures |
US5334539A (en) | 1993-01-29 | 1994-08-02 | Iowa State University Research Foundation, Inc. | Fabrication of poly(p-phenyleneacetylene) light-emitting diodes |
JPH0731927A (ja) * | 1993-07-23 | 1995-02-03 | Canon Inc | 接着剤塗布方法 |
JPH07135323A (ja) | 1993-10-20 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路およびその作製方法 |
US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
TW264575B (ja) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
US5844538A (en) | 1993-12-28 | 1998-12-01 | Sharp Kabushiki Kaisha | Active matrix-type image display apparatus controlling writing of display data with respect to picture elements |
JP3328048B2 (ja) * | 1994-02-25 | 2002-09-24 | 富士写真フイルム株式会社 | 液体の混合方法 |
US5821003A (en) | 1994-03-16 | 1998-10-13 | Sumitomo Electric Industries, Ltd. | Organic electroluminescent device |
JPH07260797A (ja) * | 1994-03-16 | 1995-10-13 | Sanyo Electric Co Ltd | 分注装置 |
JP3034438B2 (ja) | 1994-03-31 | 2000-04-17 | キヤノン株式会社 | カラーフィルタの製造装置 |
JPH07299403A (ja) * | 1994-05-02 | 1995-11-14 | Canon Inc | 塗布装置およびこれを用いて製造された画像形成装置 |
JP2701738B2 (ja) | 1994-05-17 | 1998-01-21 | 日本電気株式会社 | 有機薄膜el素子 |
JP2839134B2 (ja) | 1994-05-20 | 1998-12-16 | キヤノン株式会社 | カラーフィルタの製造方法及び液晶表示装置の製造方法及び液晶表示装置を備えた装置の製造方法及びカラーフィルタの隣接する着色部間の混色の低減方法 |
US5757396A (en) * | 1994-06-30 | 1998-05-26 | Compaq Computer Corporation | Ink jet printhead having an ultrasonic maintenance system incorporated therein and an associated method of maintaining an ink jet printhead by purging foreign matter therefrom |
EP0781075B1 (en) | 1994-09-08 | 2001-12-05 | Idemitsu Kosan Company Limited | Method for sealing organic el element and organic el element |
JPH0885203A (ja) * | 1994-09-14 | 1996-04-02 | Nikon Corp | インクジェットプリンタ |
US5985356A (en) * | 1994-10-18 | 1999-11-16 | The Regents Of The University Of California | Combinatorial synthesis of novel materials |
US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
US5663573A (en) | 1995-03-17 | 1997-09-02 | The Ohio State University | Bipolar electroluminescent device |
KR100265179B1 (ko) | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
JP3124722B2 (ja) | 1995-07-31 | 2001-01-15 | キヤノン株式会社 | カラーフィルタの製造方法及び製造装置及びカラーフィルタの区画された領域間の混色の低減方法及びカラーフィルタの区画された領域へのインク付与位置の精度向上方法及びカラーフィルタの区画された領域の着色ムラ低減方法 |
JPH09148066A (ja) | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
JPH09274990A (ja) * | 1996-04-08 | 1997-10-21 | Mitsubishi Chem Corp | 有機電界発光素子及びその製造方法 |
US5817366A (en) | 1996-07-29 | 1998-10-06 | Tdk Corporation | Method for manufacturing organic electroluminescent element and apparatus therefor |
JPH1060331A (ja) * | 1996-08-13 | 1998-03-03 | Kao Corp | インクジェット記録用インクの製造方法 |
JP3220065B2 (ja) * | 1996-09-18 | 2001-10-22 | 松下電器産業株式会社 | プラズマディスプレイパネルの蛍光体層の形成方法及びプラズマディスプレイパネルの製造方法 |
CN1882206A (zh) | 1996-09-19 | 2006-12-20 | 精工爱普生株式会社 | 矩阵式显示元件及其制造方法 |
US20020075422A1 (en) | 1996-09-19 | 2002-06-20 | Seiko Epson Corporation | Matrix type display device and manufacturing method thereof |
JP3899566B2 (ja) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
JPH10223138A (ja) * | 1996-12-04 | 1998-08-21 | Dainippon Printing Co Ltd | 蛍光体充填装置 |
DE69735666T2 (de) * | 1996-12-17 | 2007-01-25 | Toray Industries, Inc. | Verfahren und vorrichtung zur herstellung von plasmaanzeige |
JP3408090B2 (ja) | 1996-12-18 | 2003-05-19 | ステラケミファ株式会社 | エッチング剤 |
US6013982A (en) | 1996-12-23 | 2000-01-11 | The Trustees Of Princeton University | Multicolor display devices |
KR100226548B1 (ko) | 1996-12-24 | 1999-10-15 | 김영환 | 웨이퍼 습식 처리 장치 |
US5928794A (en) | 1996-12-24 | 1999-07-27 | Dow Corning Gmbh | Addition curable composition having self adhesion to substrates |
US5869929A (en) | 1997-02-04 | 1999-02-09 | Idemitsu Kosan Co., Ltd. | Multicolor luminescent device |
US6049167A (en) | 1997-02-17 | 2000-04-11 | Tdk Corporation | Organic electroluminescent display device, and method and system for making the same |
US6220912B1 (en) | 1997-05-09 | 2001-04-24 | Canon Kabushiki Kaisha | Method and apparatus for producing electron source using dispenser to produce electron emitting portions |
US6175345B1 (en) | 1997-06-02 | 2001-01-16 | Canon Kabushiki Kaisha | Electroluminescence device, electroluminescence apparatus, and production methods thereof |
US5972419A (en) | 1997-06-13 | 1999-10-26 | Hewlett-Packard Company | Electroluminescent display and method for making the same |
JP2948577B2 (ja) * | 1997-06-17 | 1999-09-13 | 中島通信機工業株式会社 | 同軸ケーブル用コネクタ |
US5920080A (en) | 1997-06-23 | 1999-07-06 | Fed Corporation | Emissive display using organic light emitting diodes |
US6843937B1 (en) | 1997-07-16 | 2005-01-18 | Seiko Epson Corporation | Composition for an organic EL element and method of manufacturing the organic EL element |
JP3580092B2 (ja) | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
US6134020A (en) | 1997-11-17 | 2000-10-17 | Canon Kabushiki Kaisha | Serial printer with addressable print buffer |
JP3656387B2 (ja) * | 1998-01-14 | 2005-06-08 | 松下電器産業株式会社 | カラー表示pdpの蛍光体形成方法および装置 |
JP4003273B2 (ja) * | 1998-01-19 | 2007-11-07 | セイコーエプソン株式会社 | パターン形成方法および基板製造装置 |
JPH11239334A (ja) * | 1998-02-24 | 1999-08-31 | Mitsubishi Electric Corp | ブリッジ制御クライアント装置 |
JP3543170B2 (ja) * | 1998-02-24 | 2004-07-14 | カシオ計算機株式会社 | 電界発光素子及びその製造方法 |
JPH11268296A (ja) * | 1998-03-26 | 1999-10-05 | Toshiba Corp | インクジェット記録装置 |
GB9808806D0 (en) * | 1998-04-24 | 1998-06-24 | Cambridge Display Tech Ltd | Selective deposition of polymer films |
JPH11327448A (ja) * | 1998-05-12 | 1999-11-26 | Idemitsu Kosan Co Ltd | 表示装置 |
JP2000030857A (ja) * | 1998-07-08 | 2000-01-28 | Futaba Corp | 有機el素子とその製造方法 |
US6394578B1 (en) | 1998-09-02 | 2002-05-28 | Canon Kabushiki Kaisha | Production process of color filter, liquid crystal display device using the color filter produced by the production process, and ink-jet head |
US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6277679B1 (en) | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
US6365917B1 (en) | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6545359B1 (en) | 1998-12-18 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof |
JPH11260797A (ja) * | 1998-12-22 | 1999-09-24 | Hitachi Ltd | プラズマ処理方法及び半導体装置の製造方法 |
US6380007B1 (en) | 1998-12-28 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US6506635B1 (en) | 1999-02-12 | 2003-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
KR100654927B1 (ko) | 1999-03-04 | 2006-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작방법 |
US6531713B1 (en) | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
TW512543B (en) | 1999-06-28 | 2002-12-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
US6833668B1 (en) | 1999-09-29 | 2004-12-21 | Sanyo Electric Co., Ltd. | Electroluminescence display device having a desiccant |
TW480722B (en) | 1999-10-12 | 2002-03-21 | Semiconductor Energy Lab | Manufacturing method of electro-optical device |
TW468283B (en) | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
TW471011B (en) | 1999-10-13 | 2002-01-01 | Semiconductor Energy Lab | Thin film forming apparatus |
TW493152B (en) | 1999-12-24 | 2002-07-01 | Semiconductor Energy Lab | Electronic device |
US6750835B2 (en) | 1999-12-27 | 2004-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Image display device and driving method thereof |
TW480727B (en) | 2000-01-11 | 2002-03-21 | Semiconductor Energy Laboratro | Semiconductor display device |
US6702407B2 (en) | 2000-01-31 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Color image display device, method of driving the same, and electronic equipment |
US6747638B2 (en) | 2000-01-31 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
TW495808B (en) | 2000-02-04 | 2002-07-21 | Semiconductor Energy Lab | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |
TW495809B (en) | 2000-02-28 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, thin film forming method, and self-light emitting device |
TW521303B (en) | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
JP2001318627A (ja) | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
TW495854B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TW495812B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, method of forming a thin film, and self-light-emitting device |
TWI226205B (en) | 2000-03-27 | 2005-01-01 | Semiconductor Energy Lab | Self-light emitting device and method of manufacturing the same |
US6611108B2 (en) | 2000-04-26 | 2003-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method thereof |
TW554637B (en) | 2000-05-12 | 2003-09-21 | Semiconductor Energy Lab | Display device and light emitting device |
US6822629B2 (en) | 2000-08-18 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP4086498B2 (ja) | 2000-11-29 | 2008-05-14 | キヤノン株式会社 | 金属配位化合物、発光素子及び表示装置 |
TWI264963B (en) | 2001-03-29 | 2006-10-21 | Hitachi Ltd | Organic EL display and production device of color filter |
-
2001
- 2001-02-01 TW TW090102076A patent/TW495808B/zh not_active IP Right Cessation
- 2001-02-02 US US09/776,472 patent/US7279194B2/en not_active Expired - Fee Related
- 2001-02-02 EP EP01102402.3A patent/EP1122801B1/en not_active Expired - Lifetime
-
2011
- 2011-06-16 JP JP2011133923A patent/JP2011175986A/ja not_active Withdrawn
- 2011-10-17 JP JP2011227541A patent/JP4987159B2/ja not_active Expired - Fee Related
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- 2012-03-14 JP JP2012056666A patent/JP5138106B2/ja not_active Expired - Fee Related
- 2012-10-10 JP JP2012224701A patent/JP2013033753A/ja not_active Withdrawn
-
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- 2014-04-17 JP JP2014085086A patent/JP2014167924A/ja not_active Withdrawn
-
2015
- 2015-09-25 JP JP2015187719A patent/JP2016033920A/ja not_active Withdrawn
-
2017
- 2017-06-29 JP JP2017127300A patent/JP2017208348A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05116322A (ja) * | 1991-10-28 | 1993-05-14 | Matsushita Electric Ind Co Ltd | インクジエツト記録装置 |
JPH1174083A (ja) * | 1997-09-01 | 1999-03-16 | Seiko Epson Corp | 電界発光素子およびその製造方法 |
JPH11216867A (ja) * | 1997-10-17 | 1999-08-10 | Eastman Kodak Co | 2進静電偏向による連続式インクジェットプリンタ |
JPH11320868A (ja) * | 1998-05-15 | 1999-11-24 | Mitsubishi Electric Corp | インクジェットヘッド駆動装置 |
Also Published As
Publication number | Publication date |
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JP5138106B2 (ja) | 2013-02-06 |
JP2012038739A (ja) | 2012-02-23 |
JP2013033753A (ja) | 2013-02-14 |
EP1122801A2 (en) | 2001-08-08 |
JP2012152737A (ja) | 2012-08-16 |
TW495808B (en) | 2002-07-21 |
JP2017208348A (ja) | 2017-11-24 |
US7279194B2 (en) | 2007-10-09 |
JP4987159B2 (ja) | 2012-07-25 |
JP2014167924A (ja) | 2014-09-11 |
US20010023661A1 (en) | 2001-09-27 |
EP1122801A3 (en) | 2005-06-08 |
EP1122801B1 (en) | 2017-03-22 |
JP5138105B2 (ja) | 2013-02-06 |
JP2012160461A (ja) | 2012-08-23 |
JP2016033920A (ja) | 2016-03-10 |
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