JP2011166449A5 - - Google Patents

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Publication number
JP2011166449A5
JP2011166449A5 JP2010026931A JP2010026931A JP2011166449A5 JP 2011166449 A5 JP2011166449 A5 JP 2011166449A5 JP 2010026931 A JP2010026931 A JP 2010026931A JP 2010026931 A JP2010026931 A JP 2010026931A JP 2011166449 A5 JP2011166449 A5 JP 2011166449A5
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JP
Japan
Prior art keywords
voltage
gate
input
output terminal
level shifter
Prior art date
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Granted
Application number
JP2010026931A
Other languages
English (en)
Japanese (ja)
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JP2011166449A (ja
JP5431992B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010026931A external-priority patent/JP5431992B2/ja
Priority to JP2010026931A priority Critical patent/JP5431992B2/ja
Priority to TW100103453A priority patent/TWI530096B/zh
Priority to US13/022,338 priority patent/US8354873B2/en
Priority to KR1020110010961A priority patent/KR101727752B1/ko
Priority to CN201110039437.2A priority patent/CN102195637B/zh
Publication of JP2011166449A publication Critical patent/JP2011166449A/ja
Publication of JP2011166449A5 publication Critical patent/JP2011166449A5/ja
Publication of JP5431992B2 publication Critical patent/JP5431992B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010026931A 2010-02-09 2010-02-09 トランスミッションゲート及び半導体装置 Expired - Fee Related JP5431992B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010026931A JP5431992B2 (ja) 2010-02-09 2010-02-09 トランスミッションゲート及び半導体装置
TW100103453A TWI530096B (zh) 2010-02-09 2011-01-28 Transmission and semiconductor devices
US13/022,338 US8354873B2 (en) 2010-02-09 2011-02-07 Transmission gate and semiconductor device
KR1020110010961A KR101727752B1 (ko) 2010-02-09 2011-02-08 트랜스미션 게이트 및 반도체 장치
CN201110039437.2A CN102195637B (zh) 2010-02-09 2011-02-09 传输门电路及半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010026931A JP5431992B2 (ja) 2010-02-09 2010-02-09 トランスミッションゲート及び半導体装置

Publications (3)

Publication Number Publication Date
JP2011166449A JP2011166449A (ja) 2011-08-25
JP2011166449A5 true JP2011166449A5 (enExample) 2013-02-07
JP5431992B2 JP5431992B2 (ja) 2014-03-05

Family

ID=44353216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010026931A Expired - Fee Related JP5431992B2 (ja) 2010-02-09 2010-02-09 トランスミッションゲート及び半導体装置

Country Status (5)

Country Link
US (1) US8354873B2 (enExample)
JP (1) JP5431992B2 (enExample)
KR (1) KR101727752B1 (enExample)
CN (1) CN102195637B (enExample)
TW (1) TWI530096B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010080889A1 (en) * 2009-01-07 2010-07-15 Zentrum Mikroelektronik Dresden Ag Adaptive bootstrap circuit for controlling cmos switch(es)
JP5923919B2 (ja) * 2011-10-11 2016-05-25 株式会社ソシオネクスト 半導体装置及びアナログスイッチの制御方法
TWI473072B (zh) * 2013-06-24 2015-02-11 Orise Technology Co Ltd 減少閂鎖元件數量的源極驅動裝置
CN104426528B (zh) * 2013-09-11 2019-05-07 台湾积体电路制造股份有限公司 多电压输入缓冲器及其相关方法
JP2016139390A (ja) * 2015-01-23 2016-08-04 エスアイアイ・セミコンダクタ株式会社 検出回路
US9843322B2 (en) * 2016-03-11 2017-12-12 Texas Instruments Incorporated Integrated high-side driver for P-N bimodal power device
KR101675573B1 (ko) * 2016-03-21 2016-11-11 주식회사 이노액시스 레벨 시프터, 디지털 아날로그 변환기, 버퍼 증폭기 및 이를 포함하는 소스 드라이버와 전자 장치
TWI653732B (zh) 2017-09-19 2019-03-11 世界先進積體電路股份有限公司 控制電路及操作電路
CN109560536B (zh) * 2017-09-26 2021-01-05 世界先进积体电路股份有限公司 控制电路及操作电路
US10818653B2 (en) 2017-12-12 2020-10-27 Vanguard International Semiconductor Corporation Control circuit and operating circuit utilizing the same
CN108199701B (zh) * 2017-12-28 2021-05-07 清华大学 一种高速的cmos传输门开关电路
US10763846B1 (en) * 2019-08-23 2020-09-01 Nxp Usa, Inc. High voltage tolerant analog switch
EP3799309A1 (en) * 2019-09-26 2021-03-31 Ams Ag Electric circuitry for signal transmission
US20220311439A1 (en) * 2021-03-24 2022-09-29 Stmicroelectronics International N.V. Multiplexer circuit using a transmission gate circuit with a selectively boosted switch control signal
CN120825157B (zh) * 2025-09-18 2025-11-21 苏州锴威特半导体股份有限公司 一种低导通电阻平坦度的模拟开关结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740717A (en) * 1986-11-25 1988-04-26 North American Philips Corporation, Signetics Division Switching device with dynamic hysteresis
JPH01175410A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体アナログ・スイッチ
JPH0595262A (ja) * 1991-03-30 1993-04-16 Nec Corp アナログ入力回路
US5194768A (en) * 1992-03-27 1993-03-16 Advanced Micro Devices, Inc. Apparatus for filtering noise from a periodic signal
JPH06208423A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 電源回路
JPH07169292A (ja) 1993-12-13 1995-07-04 Matsushita Electron Corp Ｃｍｏｓサンプルホールド回路
JPH07221642A (ja) * 1994-02-02 1995-08-18 Hitachi Ltd 半導体集積回路
US6433613B1 (en) * 2000-12-15 2002-08-13 Fairchild Semiconductor Corporation Translating switch circuit with disabling option
US6693479B1 (en) * 2002-06-06 2004-02-17 Analog Devices, Inc. Boost structures for switched-capacitor systems
JP3949027B2 (ja) * 2002-08-06 2007-07-25 富士通株式会社 アナログスイッチ回路
FR2894373B1 (fr) * 2005-12-07 2008-01-04 Atmel Corp Cellule anti-fusible autonome
JP4828343B2 (ja) * 2006-07-28 2011-11-30 三菱電機株式会社 アナログスイッチ回路
JP5018245B2 (ja) * 2007-05-31 2012-09-05 株式会社日立製作所 アナログスイッチ
JP2009017276A (ja) * 2007-07-05 2009-01-22 Nec Electronics Corp 半導体装置
JP2009108911A (ja) * 2007-10-29 2009-05-21 Akira Koyama ネジ固定機構およびネジ固定方法

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