JP2011166130A5 - - Google Patents

Claims (5)

A first transistor;
A second transistor;
A semiconductor device having a capacitive element,
The first transistor has a gate electrode and a first channel formation region,
The second transistor has a second channel formation region, a gate insulating film, a source electrode, and a drain electrode,
The first channel formation region includes a first semiconductor;
The second channel formation region includes an oxide semiconductor,
The gate electrode is electrically connected to the source electrode or the drain electrode;
A first electrode of the capacitor is electrically connected to one of the source electrode or the drain electrode;
The capacitor element includes the gate insulating film and the oxide semiconductor sandwiched between the first electrode and the second electrode. In claim 1,
The semiconductor device, wherein the first semiconductor and the oxide semiconductor are different materials. In claim 1 or claim 2,
The oxide semiconductor is a semiconductor device that energy gap and wherein the magnitude Ikoto than 3 eV. In any one of Claims 1 thru | or 3,
The switching speed of the first transistor, wherein a greater than the switching speed of the second transistor. In any one of Claims 1 thru | or 4,
The off-current of the second transistor, wherein a is smaller than the off-current of the first transistor.