JP2011129915A - 発光素子、発光素子パッケージ、及び照明システム - Google Patents
発光素子、発光素子パッケージ、及び照明システム Download PDFInfo
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- JP2011129915A JP2011129915A JP2010277127A JP2010277127A JP2011129915A JP 2011129915 A JP2011129915 A JP 2011129915A JP 2010277127 A JP2010277127 A JP 2010277127A JP 2010277127 A JP2010277127 A JP 2010277127A JP 2011129915 A JP2011129915 A JP 2011129915A
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4809—Loop shape
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【解決手段】本発明は、発光素子、発光素子パッケージ、及び照明システムに関するものである。本発明に従う発光素子は、酸化ガリウム基板の上にガリウムアルミニウムを含む酸化物と、前記ガリウムアルミニウムを含む酸化物の上にガリウムアルミニウムを含む窒化物と、前記ガリウムアルミニウムを含む窒化物の上に発光構造物と、を含む。
【選択図】図1
Description
Claims (7)
- 酸化ガリウム基板の上にガリウムアルミニウムを含む酸化物と、
前記ガリウムアルミニウムを含む酸化物の上にガリウムアルミニウムを含む窒化物と、
前記ガリウムアルミニウムを含む窒化物の上に発光構造物と、
を含むことを特徴とする発光素子。 - 前記ガリウムアルミニウムを含む酸化物は、
GaxAlyOz(但し、0<x≦1、0<y≦1、0<z≦1)を含むことを特徴とする請求項1に記載の発光素子。 - 前記ガリウムアルミニウムを含む酸化物は、1μm以下に形成することを特徴とする請求項1に記載の発光素子。
- 前記ガリウムアルミニウムを含む窒化物は、
GaxAlyNz(但し、0<x≦1、0<y≦1、0<z≦1)を含むことを特徴とする請求項1に記載の発光素子。 - 前記発光構造物は、
前記ガリウムアルミニウムを含む窒化物の上に第2導電型半導体層と、
前記第2導電型半導体層の上に活性層と、
前記活性層の上に第1導電型半導体層と、
を含むことを特徴とする請求項1に記載の発光素子。 - パッケージ胴体と、
前記パッケージ胴体に設けられた第3電極層及び第4電極層と、
前記第3電極層及び第4電極層に電気的に連結された請求項1乃至5の何れか1項に記載の発光素子と、
を含むことを特徴とする発光素子パッケージ。 - 基板と、前記基板の上に設けられた発光素子パッケージを含む発光モジュールを含み、
前記発光素子パッケージは、パッケージ胴体と、前記パッケージ胴体に設けられた第3電極層及び第4電極層と、前記第3電極層及び第4電極層に電気的に連結された請求項1乃至5の何れか1項に記載の発光素子と、を含むことを特徴とする照明システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0127189 | 2009-12-18 | ||
KR1020090127189A KR101047652B1 (ko) | 2009-12-18 | 2009-12-18 | 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2011129915A true JP2011129915A (ja) | 2011-06-30 |
JP5751696B2 JP5751696B2 (ja) | 2015-07-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010277127A Active JP5751696B2 (ja) | 2009-12-18 | 2010-12-13 | 発光素子、発光素子パッケージ、及び照明システム |
Country Status (5)
Country | Link |
---|---|
US (3) | US8115230B2 (ja) |
EP (1) | EP2337093B1 (ja) |
JP (1) | JP5751696B2 (ja) |
KR (1) | KR101047652B1 (ja) |
CN (1) | CN102104093B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016002800A1 (ja) * | 2014-07-01 | 2016-01-07 | 株式会社タムラ製作所 | 発光素子 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9142623B2 (en) * | 2011-09-08 | 2015-09-22 | Tamura Corporation | Substrate for epitaxial growth, and crystal laminate structure |
CN106795273B (zh) * | 2014-10-27 | 2022-05-24 | 陶氏环球技术有限责任公司 | 增塑剂组合物以及制备增塑剂组合物的方法 |
JP6776931B2 (ja) * | 2016-03-23 | 2020-10-28 | 三菱マテリアル株式会社 | 積層反射電極膜、積層反射電極パターン、積層反射電極パターンの製造方法 |
TWI577842B (zh) * | 2016-05-30 | 2017-04-11 | 光鋐科技股份有限公司 | 氮化鋁鎵的成長方法 |
CN107358780B (zh) * | 2017-07-30 | 2020-01-03 | 王旭兰 | 基于pn结芯片的智能电火花检测报警系统及其制备方法 |
EP3769346A1 (en) * | 2018-03-19 | 2021-01-27 | King Abdullah University of Science and Technology | Iii-nitride optoelectronic devices and method of production |
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JP2009060005A (ja) * | 2007-09-03 | 2009-03-19 | Nippon Light Metal Co Ltd | 発光素子およびその製造方法 |
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- 2009-12-18 KR KR1020090127189A patent/KR101047652B1/ko not_active IP Right Cessation
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- 2010-11-05 US US12/940,718 patent/US8115230B2/en active Active
- 2010-11-17 EP EP10191489A patent/EP2337093B1/en active Active
- 2010-12-03 CN CN201010579308.8A patent/CN102104093B/zh active Active
- 2010-12-13 JP JP2010277127A patent/JP5751696B2/ja active Active
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- 2012-01-12 US US13/349,387 patent/US8349743B2/en active Active
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JP2008258042A (ja) * | 2007-04-06 | 2008-10-23 | Hitachi Displays Ltd | 照明装置およびこの照明装置を用いた表示装置 |
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WO2016002800A1 (ja) * | 2014-07-01 | 2016-01-07 | 株式会社タムラ製作所 | 発光素子 |
JP2016015375A (ja) * | 2014-07-01 | 2016-01-28 | 株式会社タムラ製作所 | 発光素子 |
Also Published As
Publication number | Publication date |
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CN102104093A (zh) | 2011-06-22 |
US20120115267A1 (en) | 2012-05-10 |
US20130119402A1 (en) | 2013-05-16 |
US20110147771A1 (en) | 2011-06-23 |
EP2337093A1 (en) | 2011-06-22 |
KR101047652B1 (ko) | 2011-07-07 |
CN102104093B (zh) | 2015-06-17 |
US8349743B2 (en) | 2013-01-08 |
EP2337093B1 (en) | 2013-01-02 |
JP5751696B2 (ja) | 2015-07-22 |
US9099611B2 (en) | 2015-08-04 |
US8115230B2 (en) | 2012-02-14 |
KR20110070382A (ko) | 2011-06-24 |
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