JP2011129811A5 - - Google Patents

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Publication number
JP2011129811A5
JP2011129811A5 JP2009289041A JP2009289041A JP2011129811A5 JP 2011129811 A5 JP2011129811 A5 JP 2011129811A5 JP 2009289041 A JP2009289041 A JP 2009289041A JP 2009289041 A JP2009289041 A JP 2009289041A JP 2011129811 A5 JP2011129811 A5 JP 2011129811A5
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JP
Japan
Prior art keywords
gate electrode
semiconductor device
active region
region
spacer
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JP2009289041A
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English (en)
Japanese (ja)
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JP5435720B2 (ja
JP2011129811A (ja
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Priority to JP2009289041A priority Critical patent/JP5435720B2/ja
Priority claimed from JP2009289041A external-priority patent/JP5435720B2/ja
Priority to PCT/JP2010/004887 priority patent/WO2011077606A1/ja
Publication of JP2011129811A publication Critical patent/JP2011129811A/ja
Publication of JP2011129811A5 publication Critical patent/JP2011129811A5/ja
Priority to US13/399,004 priority patent/US20120161245A1/en
Application granted granted Critical
Publication of JP5435720B2 publication Critical patent/JP5435720B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009289041A 2009-12-21 2009-12-21 半導体装置 Expired - Fee Related JP5435720B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009289041A JP5435720B2 (ja) 2009-12-21 2009-12-21 半導体装置
PCT/JP2010/004887 WO2011077606A1 (ja) 2009-12-21 2010-08-03 半導体装置とその製造方法
US13/399,004 US20120161245A1 (en) 2009-12-21 2012-02-17 Semiconductor device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009289041A JP5435720B2 (ja) 2009-12-21 2009-12-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2011129811A JP2011129811A (ja) 2011-06-30
JP2011129811A5 true JP2011129811A5 (enExample) 2011-12-01
JP5435720B2 JP5435720B2 (ja) 2014-03-05

Family

ID=44195160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009289041A Expired - Fee Related JP5435720B2 (ja) 2009-12-21 2009-12-21 半導体装置

Country Status (3)

Country Link
US (1) US20120161245A1 (enExample)
JP (1) JP5435720B2 (enExample)
WO (1) WO2011077606A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5847537B2 (ja) * 2011-10-28 2016-01-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8822295B2 (en) 2012-04-03 2014-09-02 International Business Machines Corporation Low extension dose implants in SRAM fabrication
JP5927017B2 (ja) * 2012-04-20 2016-05-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP6275559B2 (ja) * 2014-06-13 2018-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2017171881A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Semiconductor device having sub regions to define threshold voltages

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JP3532625B2 (ja) * 1994-10-06 2004-05-31 東芝マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR100214468B1 (ko) * 1995-12-29 1999-08-02 구본준 씨모스 소자 제조방법
JPH1167927A (ja) * 1997-06-09 1999-03-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR19990030993A (ko) * 1997-10-08 1999-05-06 윤종용 고속동작을 위한 모스트랜지스터구조
US5989966A (en) * 1997-12-15 1999-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and a deep sub-micron field effect transistor structure for suppressing short channel effects
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JP2000150885A (ja) * 1998-09-07 2000-05-30 Seiko Epson Corp Ｍｏｓトランジスタの閾値電圧設定方法および半導体装置
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JP2001015704A (ja) 1999-06-29 2001-01-19 Hitachi Ltd 半導体集積回路
JP3275896B2 (ja) * 1999-10-06 2002-04-22 日本電気株式会社 半導体装置の製造方法
JP2001196475A (ja) * 2000-01-12 2001-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2002026139A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP4635333B2 (ja) * 2000-12-14 2011-02-23 ソニー株式会社 半導体装置の製造方法
JP2002231821A (ja) * 2001-01-31 2002-08-16 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP2003197765A (ja) * 2001-12-28 2003-07-11 Texas Instr Japan Ltd 半導体装置およびその製造方法
US6849492B2 (en) * 2002-07-08 2005-02-01 Micron Technology, Inc. Method for forming standard voltage threshold and low voltage threshold MOSFET devices
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JP4393109B2 (ja) * 2003-05-21 2010-01-06 株式会社ルネサステクノロジ 半導体装置の製造方法
US7064396B2 (en) * 2004-03-01 2006-06-20 Freescale Semiconductor, Inc. Integrated circuit with multiple spacer insulating region widths
JP2005303087A (ja) * 2004-04-13 2005-10-27 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
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US7456066B2 (en) * 2006-11-03 2008-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Variable width offset spacers for mixed signal and system on chip devices
JP4320405B2 (ja) * 2007-03-27 2009-08-26 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
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JP2009141168A (ja) * 2007-12-07 2009-06-25 Panasonic Corp 半導体装置及びその製造方法
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JP2010123669A (ja) * 2008-11-18 2010-06-03 Nec Electronics Corp 半導体装置およびその製造方法
JP2010153683A (ja) * 2008-12-26 2010-07-08 Hitachi Ltd 半導体装置
US8106455B2 (en) * 2009-04-30 2012-01-31 International Business Machines Corporation Threshold voltage adjustment through gate dielectric stack modification
DE102009021486B4 (de) * 2009-05-15 2013-07-04 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren zur Feldeffekttransistor-Herstellung
US20100308418A1 (en) * 2009-06-09 2010-12-09 Knut Stahrenberg Semiconductor Devices and Methods of Manufacture Thereof
US8105892B2 (en) * 2009-08-18 2012-01-31 International Business Machines Corporation Thermal dual gate oxide device integration
US8283734B2 (en) * 2010-04-09 2012-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-threshold voltage device and method of making same
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