JP2011124293A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2011124293A
JP2011124293A JP2009279035A JP2009279035A JP2011124293A JP 2011124293 A JP2011124293 A JP 2011124293A JP 2009279035 A JP2009279035 A JP 2009279035A JP 2009279035 A JP2009279035 A JP 2009279035A JP 2011124293 A JP2011124293 A JP 2011124293A
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JP
Japan
Prior art keywords
faraday shield
bell jar
plasma
processing apparatus
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009279035A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011124293A5 (enrdf_load_stackoverflow
Inventor
Yusaku Zoku
優作 属
Takeshi Yoshioka
健 吉岡
Ryoji Nishio
良司 西尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2009279035A priority Critical patent/JP2011124293A/ja
Priority to KR1020100013164A priority patent/KR101142411B1/ko
Priority to US12/712,795 priority patent/US20110132540A1/en
Publication of JP2011124293A publication Critical patent/JP2011124293A/ja
Publication of JP2011124293A5 publication Critical patent/JP2011124293A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2009279035A 2009-12-09 2009-12-09 プラズマ処理装置 Pending JP2011124293A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009279035A JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置
KR1020100013164A KR101142411B1 (ko) 2009-12-09 2010-02-12 플라즈마처리장치
US12/712,795 US20110132540A1 (en) 2009-12-09 2010-02-25 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009279035A JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2011124293A true JP2011124293A (ja) 2011-06-23
JP2011124293A5 JP2011124293A5 (enrdf_load_stackoverflow) 2013-07-25

Family

ID=44080850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009279035A Pending JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置

Country Status (3)

Country Link
US (1) US20110132540A1 (enrdf_load_stackoverflow)
JP (1) JP2011124293A (enrdf_load_stackoverflow)
KR (1) KR101142411B1 (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080643A (ja) * 2011-10-05 2013-05-02 Hitachi High-Technologies Corp プラズマ処理装置
KR20140145621A (ko) * 2012-04-19 2014-12-23 로트 운트 라우 악치엔게젤샤프트 마이크로파 플라스마 발생 장치 및 그 작동 방법
JP2019179749A (ja) * 2018-03-30 2019-10-17 株式会社ダイヘン プラズマ発生装置
JP2019179750A (ja) * 2018-03-30 2019-10-17 株式会社ダイヘン プラズマ発生装置
JP2022523969A (ja) * 2019-03-05 2022-04-27 エーイーエス グローバル ホールディングス， プライベート リミテッド シングルターンおよび積層壁誘導結合プラズマ源

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2013099372A1 (ja) * 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
JP6620078B2 (ja) 2016-09-05 2019-12-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7139181B2 (ja) * 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
KR102540773B1 (ko) * 2021-01-19 2023-06-12 피에스케이 주식회사 패러데이 실드 및 기판 처리 장치
CN114864367A (zh) * 2022-03-25 2022-08-05 上海谙邦半导体设备有限公司 一种具有屏蔽效果的介质管及等离子体反应腔

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888220A (ja) * 1994-06-23 1996-04-02 Applied Materials Inc プラズマ促進材料処理用の誘導結合型高密度プラズマリアクタ
JP2001085195A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 高周波放電装置およびプラズマ処理方法
JP2007158373A (ja) * 2007-02-13 2007-06-21 Hitachi High-Technologies Corp プラズマ処理装置

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US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6149760A (en) * 1997-10-20 2000-11-21 Tokyo Electron Yamanashi Limited Plasma processing apparatus
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
KR100542459B1 (ko) * 1999-03-09 2006-01-12 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 플라즈마처리방법
US6447636B1 (en) * 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6685799B2 (en) * 2001-03-14 2004-02-03 Applied Materials Inc. Variable efficiency faraday shield
KR100452920B1 (ko) 2002-07-19 2004-10-14 한국디엔에스 주식회사 유도결합형 플라즈마 에칭 장치
CN100353484C (zh) 2002-07-31 2007-12-05 兰姆研究有限公司 用于调整带电的法拉第屏蔽上的电压的方法
KR20040077019A (ko) * 2003-02-27 2004-09-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 처리방법
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
KR100783071B1 (ko) 2006-12-22 2007-12-07 세메스 주식회사 패러데이 실드 유닛 및 이를 갖는 기판 처리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888220A (ja) * 1994-06-23 1996-04-02 Applied Materials Inc プラズマ促進材料処理用の誘導結合型高密度プラズマリアクタ
JP2001085195A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 高周波放電装置およびプラズマ処理方法
JP2007158373A (ja) * 2007-02-13 2007-06-21 Hitachi High-Technologies Corp プラズマ処理装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080643A (ja) * 2011-10-05 2013-05-02 Hitachi High-Technologies Corp プラズマ処理装置
KR20140145621A (ko) * 2012-04-19 2014-12-23 로트 운트 라우 악치엔게젤샤프트 마이크로파 플라스마 발생 장치 및 그 작동 방법
JP2015520478A (ja) * 2012-04-19 2015-07-16 ロス・ウント・ラウ・アーゲー マイクロ波プラズマ生成装置およびこれを作動させる方法
KR101880702B1 (ko) * 2012-04-19 2018-07-20 마이어 버거 (저머니) 게엠베하 마이크로파 플라스마 발생 장치 및 그 작동 방법
JP2019179749A (ja) * 2018-03-30 2019-10-17 株式会社ダイヘン プラズマ発生装置
JP2019179750A (ja) * 2018-03-30 2019-10-17 株式会社ダイヘン プラズマ発生装置
JP7042143B2 (ja) 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP7042142B2 (ja) 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP2022523969A (ja) * 2019-03-05 2022-04-27 エーイーエス グローバル ホールディングス， プライベート リミテッド シングルターンおよび積層壁誘導結合プラズマ源
JP7511568B2 (ja) 2019-03-05 2024-07-05 エーイーエス グローバル ホールディングス， プライベート リミテッド シングルターンおよび積層壁誘導結合プラズマ源

Also Published As

Publication number Publication date
US20110132540A1 (en) 2011-06-09
KR101142411B1 (ko) 2012-05-07
KR20110065252A (ko) 2011-06-15

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