JP2011097093A5 - - Google Patents

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Publication number
JP2011097093A5
JP2011097093A5 JP2011006255A JP2011006255A JP2011097093A5 JP 2011097093 A5 JP2011097093 A5 JP 2011097093A5 JP 2011006255 A JP2011006255 A JP 2011006255A JP 2011006255 A JP2011006255 A JP 2011006255A JP 2011097093 A5 JP2011097093 A5 JP 2011097093A5
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JP
Japan
Prior art keywords
implanting
silicon carbide
type
region
implantation
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Application number
JP2011006255A
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English (en)
Japanese (ja)
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JP2011097093A (ja
JP5295274B2 (ja
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Priority claimed from US09/093,207 external-priority patent/US6107142A/en
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Publication of JP2011097093A publication Critical patent/JP2011097093A/ja
Publication of JP2011097093A5 publication Critical patent/JP2011097093A5/ja
Application granted granted Critical
Publication of JP5295274B2 publication Critical patent/JP5295274B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2011006255A 1998-06-08 2011-01-14 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法 Expired - Lifetime JP5295274B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/093,207 1998-06-08
US09/093,207 US6107142A (en) 1998-06-08 1998-06-08 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000553992A Division JP5184724B2 (ja) 1998-06-08 1999-06-07 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法

Publications (3)

Publication Number Publication Date
JP2011097093A JP2011097093A (ja) 2011-05-12
JP2011097093A5 true JP2011097093A5 (enExample) 2012-02-16
JP5295274B2 JP5295274B2 (ja) 2013-09-18

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000553992A Expired - Lifetime JP5184724B2 (ja) 1998-06-08 1999-06-07 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法
JP2011006255A Expired - Lifetime JP5295274B2 (ja) 1998-06-08 2011-01-14 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2000553992A Expired - Lifetime JP5184724B2 (ja) 1998-06-08 1999-06-07 イオン注入及び側方拡散による炭化シリコンパワーデバイスの自己整列的な製造方法

Country Status (8)

Country Link
US (1) US6107142A (enExample)
EP (2) EP1086491A1 (enExample)
JP (2) JP5184724B2 (enExample)
KR (1) KR100596061B1 (enExample)
CN (1) CN1155066C (enExample)
AU (1) AU4550399A (enExample)
CA (1) CA2333579C (enExample)
WO (1) WO1999065073A1 (enExample)

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US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP4442698B2 (ja) * 2007-07-25 2010-03-31 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8796809B2 (en) 2008-09-08 2014-08-05 Cree, Inc. Varactor diode with doped voltage blocking layer
US7829402B2 (en) * 2009-02-10 2010-11-09 General Electric Company MOSFET devices and methods of making
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
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US9018048B2 (en) * 2012-09-27 2015-04-28 Stmicroelectronics S.R.L. Process for manufactuirng super-barrier rectifiers
RU2528554C1 (ru) * 2013-04-25 2014-09-20 федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Способ формирования высоковольтного карбидокремниевого диода на основе ионно-легированных p-n-структур
US9768259B2 (en) * 2013-07-26 2017-09-19 Cree, Inc. Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
JP6206012B2 (ja) * 2013-09-06 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置
US9673315B2 (en) 2015-03-24 2017-06-06 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator
KR102704347B1 (ko) * 2016-10-14 2024-09-06 한국전기연구원 SiC 금속 산화물 반도체 소자의 제조 방법
JP6988216B2 (ja) 2017-07-12 2022-01-05 富士電機株式会社 半導体装置の製造方法
WO2019166576A1 (en) 2018-02-28 2019-09-06 Abb Schweiz Ag Method for p-type doping of silicon carbide by al/be co-implantation
JP6862381B2 (ja) 2018-03-02 2021-04-21 株式会社東芝 半導体装置
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